Abstract: A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Abstract: A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), IOFF represents the off-state current, t represents time during which the transistor is off, ? and ? are constants, ? is a constant that satisfies 0<??1, and CS is a constant that represents load capacitance of a source or a drain.

Abstract: To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

Abstract: The present disclosure relates, in general, human antibodies against human parathyroid hormone receptor 1 (PTH1R) and methods of use of such antibodies in the treatment of cancer, Humoral Hypercalcemia of Malignancy (HHM), or Primary Hyperparathyroidism (PHPT) and Secondary Hyperparathyroidism (SHPT) and cachexia.

Abstract: The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGF?), including TGF?1, TGF?2 and TGF?3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGF? expression.

Abstract: The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGF?), including TGF?1, TGF?2 and TGF?3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGF? expression.

Abstract: The present disclosure relates, in general, to methods of treating or preventing hypoglycemia using a negative modulator antibody fragment that binds to the insulin receptor and modulates the action of insulin at the insulin receptor.

Abstract: The disclosure relates to therapeutic proteins and pharmaceutical compositions comprising said proteins, which have utility in treating various human diseases. In particular aspects, the disclosed therapeutic proteins are useful for treating human gastrointestinal inflammatory diseases and gastrointestinal conditions associated with decreased epithelial cell barrier function or integrity. Further, the disclosed therapeutic proteins are useful for treating human inflammatory bowel disease, including inter alia, Crohn's disease and ulcerative colitis.

Abstract: The disclosure relates to therapeutic proteins and pharmaceutical compositions comprising said proteins, which have utility in treating various human diseases. In particular aspects, the disclosed therapeutic proteins are useful for treating human gastrointestinal inflammatory diseases and gastrointestinal conditions associated with decreased epithelial cell barrier function or integrity. Further, the disclosed therapeutic proteins are useful for treating human inflammatory bowel disease, including inter alia, Crohn's disease and ulcerative colitis.

Abstract: A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125° C. and lower than or equal to 450° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased.

Abstract: A formation method of a silicon film which contributes to improvements in cycle characteristics and an increase in charge/discharge capacity and can be used as an active material layer is provided. In addition, a manufacturing method of a power storage device including the silicon film is provided. The formation method is as follows. A crystalline silicon film is formed over a conductive layer by an LPCVD method. The supply of a source gas is stopped and heat treatment is performed on the silicon film while the source gas is exhausted. The silicon film is grown to have whisker-like portions by an LPCVD method while the source gas is supplied into the reaction space. A power storage device is manufactured using, as an active material layer included in a negative electrode, the silicon film grown to have whisker-like portions.

Abstract: The present disclosure relates, in general, to methods of treating or preventing hypoglycemia using a negative modulator antibody fragment that binds to the insulin receptor and modulates the action of insulin at the insulin receptor.

Abstract: A manufacturing method of a semiconductor device in which the threshold is adjusted to an appropriate value is provided. The semiconductor device includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a first gate electrode and a second gate electrode between which the semiconductor is sandwiched, an electron trap layer between the first gate electrode and the semiconductor, and a gate insulating layer between the second gate electrode and the semiconductor. By keeping a potential of the first gate electrode higher than a potential of the source or drain electrode for 1 second or more while heating, electrons are trapped in the electron trap layer. Consequently, threshold is increased and Icut is reduced.

Abstract: An electrode for a power storage device with good cycle characteristics and high charge/discharge capacity is provided. In addition, a power storage device including the electrode is provided. The electrode for the power storage device includes a conductive layer and an active material layer provided over the conductive layer, the active material layer includes graphene and an active material including a plurality of whiskers, and the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to have holes in part of the active material layer. Further, in the electrode for the power storage device, the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to cover the active material including a plurality of whiskers. Further, the power storage device including the electrode is manufactured.

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. One feature resides in forming an oxide semiconductor film over an oxygen-introduced insulating film, and then forming the source and drain electrodes with an antioxidant film thereunder. Here, in the antioxidant film, the width of a region overlapping with the source and drain electrodes is longer than the width of a region not overlapping with them. The transistor formed as such has less defects in the channel region, which will improve reliability of the semiconductor device.

Abstract: A bicycle handlebar clamp is configured to be attached on a handlebar. The bicycle handlebar clamp includes an outer surface, a handlebar engagement surface and an attachment bore. The handlebar engagement surface is configured to be engaged with the handlebar. The fixing nut receiving aperture is configured to receive a fixing nut. The fixing nut receiving aperture extends through the handlebar clamp from the outer surface to the handlebar engagement surface. The attachment bore is configured to receive an attachment pin. The attachment bore and the fixing nut receiving aperture intersect each other. A bicycle handlebar clamp assembly is provided with the bicycle handlebar clamp.

Abstract: It is an object to improve performance of a power storage device, such as cycle characteristics. A power storage device includes a current collector and a crystalline semiconductor layer including a whisker, which is formed on and in close contact with the current collector. Separation of the crystalline semiconductor layer is suppressed by an increase of adhesion, whereby cycle characteristics in which a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90% is realized. In addition, cycle characteristics in which a specific capacity of a hundredth cycle number with respect to a first cycle number is greater than or equal to 70% is realized.

Abstract: The present disclosure relates, in general, to human antibodies against human interleukin 2 (IL-2) and methods of use of such antibodies for modulating IL-2 activity and use in the treatment of conditions such as cancer, autoimmune disease, or infection.

Abstract: A non-aqueous secondary battery which has high charge-discharge capacity, can be charged and discharged at high speed, and has little deterioration in battery characteristics due to charge and discharge is provided. A negative electrode includes a current collector and an active material layer. The current collector includes a plurality of protrusion portions extending in a substantially perpendicular direction and a base portion connected to the plurality of protrusion portions. The protrusion portions and the base portion are formed using the same material containing titanium. Top surfaces and side surfaces of the protrusion portions and a top surface of the base portion are covered with the active material layer. The active material layer includes a plurality of whiskers. The active material layer may be covered with graphene.