Abstract: An optical monitor device of the present microwave plasma etching device has: a monitor head located in a position more radially inward than the edge of a semiconductor wafer W mounted on a susceptor, more radially outward than a coaxial pipe, and above a cover plate; an optical waveguide for monitoring provided vertically below the monitor head, and longitudinally traversing the cooling plate, a dielectric plate, and a dielectric window; and a monitor main body optically connected to the monitor head via an optical fiber.

Abstract: A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve pla

Abstract: A plasma processing apparatus 31 includes a processing chamber 32; a gas supply unit 33 for supplying a plasma processing gas into a processing chamber 32; a mounting table 34 configured to hold the target substrate W thereon; a plasma generating device 39 configured to generate plasma within the processing chamber 32; and a gas supply device 61. The gas supply device 61 includes a head unit 62 configured to move between a first position above the mounting table 34 and a second position different from the first position and to supply a gas, and the head unit 62 is configured to supply a film forming gas to a small-volume region formed between the mounting table 34 and the head unit 62 when the head unit 62 is positioned at the first position and to adsorb the film forming gas on the target substrate W.

Abstract: A disclosed valve comprises a first valve body including first and second openings that permit gaseous communication between a chamber and an evacuation apparatus; a sealing valve element that moves near/away from the second opening to open/close the second opening; a sealing member provided in the sealing valve element to seal the second opening when the sealing valve element closes the second opening; a valve element retreat area that is provided in an inner wall of the first valve body away from the second opening, and shields the sealing member from an inside of the first valve body when the sealing valve element is moved to the valve element retreat area; and a first pivot shaft that pivots the sealing valve element so that the sealing valve element may be located in one of the second opening and the valve element retreat area.

Abstract: A plasma generation chamber of a plasma processing apparatus is closed by a top plate 3. The top plate 3 has recesses 3A on its surface facing the plasma generation chamber and a central recess 3B on an opposite surface. The top plate 3 is coupled to an antenna thereon. If a microwave is supplied to the antenna, the microwave is radiated through slots of the antenna. The microwave is propagated through the top plate 3 such that the microwave has a plane of polarization and the microwave forms a circularly polarized wave as a whole. Here, resonance absorption of the microwave occurs at a side surface of recesses 3A and the microwave is propagated within the recesses 3A in a single mode. Strong plasma can be generated within each of the recesses 3A, so that a stable plasma mode can be generated in the top plate 3.

Abstract: There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

Abstract: A manufacturing method of a top plate hermetically attached to an upper opening of a tubular shaped container body for forming a processing container of a plasma processing apparatus is provided. The manufacturing method includes the steps of; preparing a top plate body comprised of a dielectric body for transmitting an electromagnetic wave, and having a gas ejection hole for ejecting a gas into the processing container; forming a discharge prevention member having a discharge prevention member body comprised of a dielectric body having a permeability, and a dense member comprised of a dielectric body without a permeability covering at least a side face of the discharge prevention member body; and attaching the discharge prevention member in the gas ejection hole of the top plate body.

Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 ?m to 70 ?m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 ?m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

Abstract: Disclosed is a plasma processing apparatus including: a processing container having a cylindrical columnar shape centering around a predetermined axis and defining a processing space therein; a plurality of columnar dielectric bodies installed at a top side of the processing space; a microwave generator configured to generate microwaves; a waveguide unit configured to connect the microwave generator and the plurality of columnar dielectric bodies; and a stage installed within the processing container to intersect with the predetermined axis. The plurality of columnar dielectric bodies are arranged at predetermined intervals along a circumferential direction around the predetermined axis within the processing space. The waveguide unit branches microwaves input from the microwave generator and supplies the branched microwaves to the plurality of columnar dielectric bodies.

Abstract: A plasma processing apparatus includes a processing chamber configured to partition a processing space and a microwave generator configured to generate microwaves for plasma excitation. Further, the plasma processing apparatus includes a dielectric member mounted in the processing chamber so as to seal the processing space, and configured to introduce the microwaves generated by the microwave generator into the processing space. Further, the plasma processing apparatus includes an injector mounted in the dielectric member, and configured to supply the processing gas made in a plasma state due to the microwaves to the processing space through a through-hole formed in the dielectric member. Further, the plasma processing apparatus includes a waveguide plate made of a dielectric material mounted in the injector so as to surround the through-hole of the dielectric member, and configured to guide the microwaves propagated into the dielectric member toward the through-hole to an inside of the injector.

Abstract: A method and system for plasma-assisted thin film vapor deposition on a substrate is described. The system includes a process chamber including a first process space having a first volume, a substrate stage coupled to the process chamber and configured to support a substrate and expose the substrate to the first process space, a plasma generation system coupled to the process chamber and configured to generate plasma in at least a portion of the first process space, and a vacuum pumping system coupled to the process chamber and configured to evacuate at least a portion of the first process space. The system further includes a process volume adjustment mechanism coupled to the process chamber and configured to create a second process space that includes at least a part of the first process space and that has a second volume less than the first volume, the substrate being exposed to the second process space.

Abstract: Disclosed is a plasma processing apparatus including a processing container that defines a processing space, a mounting table, and a microwave introducing antenna. The mounting table includes a mounting region where a workpiece accommodated in the processing container is mounted. The microwave introducing antenna includes a dielectric window installed above the mounting table. The dielectric window includes a bottom surface region that adjoins the processing space. The bottom surface region is configured in an annular shape so as to limit a region where a surface wave is propagated to a region above an edge of the mounting region.

Abstract: A processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus having an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof, a mounting table provided within the processing chamber for holding the target object, a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port, and a gas exhaust system connected to the pressure control valve. The pressure control valve is arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.

Abstract: A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.

Abstract: A process monitoring device 11 includes a light source unit that outputs light; a light detection unit that detects an intensity of light; a first optical path 21 that guides the light outputted from the light source unit to a wafer W and guides reflection light from the wafer W to the light detection unit; a second optical path that has a light propagation characteristic equivalent to that of the first optical path 21 and guides the light outputted from the light source unit to the light detection unit without allowing the light to pass the wafer W; and a controller 17 that corrects intensity information of the light detected by the light detection unit via the first optical path 21 based on intensity information of the light detected by the light detection unit via the second optical path, and analyzes a structure of the wafer W.

Abstract: An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

Abstract: A manufacturing method of a top plate hermetically attached to an upper opening of a tubular shaped container body for forming a processing container of a plasma processing apparatus is provided. The manufacturing method includes the steps of; preparing a top plate body comprised of a dielectric body for transmitting an electromagnetic wave, and having a gas ejection hole for ejecting a gas into the processing container; forming a discharge prevention member having a discharge prevention member body comprised of a dielectric body having a permeability, and a dense member comprised of a dielectric body without a permeability covering at least a side face of the discharge prevention member body; and attaching the discharge prevention member in the gas ejection hole of the top plate body.

Abstract: A processing method performs a predetermined process to an object by supplying a process gas at a prescribed flow rate into a process container to which a gas supply unit and an exhaust system are connected. The processing method includes a first process of setting the gas supply unit to supply a process gas at a flow rate greater than the prescribed flow rate of a predetermined process for a predetermined short time from a gas channel while exhausting an atmosphere in the process container through the exhaust system; and a second process of setting the gas supply unit to supply the process gas at the prescribed flow rate from the gas channel after the first process is completed.