Abstract: A power conversion unit includes a plurality of arms each having a plurality of converter cells connected to each other in cascade. A converter control unit that controls the power conversion unit includes a voltage command value computing unit to compute an output voltage command value for each arm, and a gate signal generating unit to generate an on/off control signal of each switching element of each converter cell in accordance with the output voltage command value. A voltage command value computing unit is configured to generate the output voltage command value with compensation for an AC vibration component, extracted for each arm, of stored energy of power storage elements of a plurality of converter cells included in the arm.

Abstract: Described herein is a technique capable of forming a film whose characteristics are uniform by discharging a residual component from a plurality of grooves before supplying a process gas. According to one aspect thereof, there is provided a substrate processing apparatus including: (a) loading a substrate on which a plurality of grooves are provided into a process chamber, wherein a residue is adhered to the plurality of the grooves; (b) desorbing the residue from the plurality of the grooves by heating the substrate; and (c) discharging the residue from the plurality of the grooves to a process space of the process chamber after (b) is performed by heating a surface of the substrate to a temperature higher than a temperature of the substrate in (b).

Abstract: There is provided a technique that includes: a process chamber in which a substrate is processed; an exhaust controller configured to control a gas flow path through which a plurality of exhausts in parallel is connected to the process chamber and a gas flow in the gas flow path; an output controller configured to control output of each of the exhausts; and a controller configured to be capable of controlling the exhaust controller and the output controller.

Abstract: A method of processing a substrate includes: (a) providing a substrate; (b) supplying a processing gas comprising H2O-containing radicals to the substrate; (c) supplying a gas including at least one element of Si, Ti, Mo, Al, W, Hf or Zr and a halogen element to the substrate; (d) supplying a gas including one or both of an oxygen element and a nitrogen element to the substrate after (c); and (e) repeating (c) and (d).

Abstract: A power transmission device is provided with: a rotary body arranged to receive the torque to rotate about an axis; a clutch including a clutch member engaging with the rotary body and axially movable and clutch teeth connectable with the clutch member to transmit the torque; a solenoid configured to generate a magnetic flux in response to input of electric power; a stator coupled with the solenoid as to conduct the magnetic flux and prevented from rotation about the axis; a rotor arranged to receive the magnetic flux from the stator and, when driven by the received magnetic flux, to create a rotational motion about the axis; and a conversion mechanism drivingly connected with the rotor to convert the rotational motion into a linear motion in a direction along the axis, the conversion mechanism including a thrust member transmitting the linear motion to the clutch member.

Abstract: A method of manufacturing a semiconductor device including: (a) loading a substrate into a process chamber; (b) supplying a processing gas including H2O-containing radicals to the substrate; (c) supplying a gas including a halogen element; (d) supplying a gas including one or both of an oxygen element and a nitrogen element after (c); (e) repeating (c) and (d); and (f) repeating (b) and (e).

Abstract: There is provided a technique that includes a load port on which a plurality of storage containers, each storage container storing a plurality of substrates, are mounted, a plurality of process chambers configured to be capable of accommodating the substrates, a transfer part configured to transfer the substrates stored in each storage container to each of the process chambers; an operation part configured to, when performing the process in a state in which a substrate is not present in each process chamber, count first count data of data tables for corresponding process chambers; a memory configured to store the data tables; and a controller configured to assign first transfer flag data to a data table of a process chamber having largest first count data and configured to control the transfer part based on the first transfer flag data so as to transfer the substrates in the predetermined order.

Abstract: There is provided a technique that includes adjusting a pressure of each of a plurality of process chambers, by adjusting an opening degree of a pressure-adjusting valve included in a common gas exhaust pipe, which is connected to a plurality of process chamber exhaust pipes and is disposed to merge respective process chamber exhaust pipes on a downstream side of the plurality of process chamber exhaust pipes, to a predetermined opening degree and by exhausting an atmosphere of each of the process chambers from the plurality of process chamber exhaust pipes and the common gas exhaust pipe while supplying an inert gas to the plurality of process chambers; processing a substrate in each of the process chambers; and detecting a fluctuation of pressures in the process chamber exhaust pipes by measuring, by one or more pressure detectors, the pressures of the process chamber exhaust pipes.

Abstract: A substrate processing apparatus includes a plurality of storage containers mounted on a load port, each storage container storing a plurality of substrates; a plurality of process chambers for accommodating the substrates; a transfer part for transferring the substrates; a memory for storing data tables, including first count data, for the process chambers; an operation part, when multiple substrates in the first storage container is transferred to the process chambers in a predetermined order and performs a predetermined process in the process chambers in a state in which no substrate is present in a first process chamber, counting first count data for the first process chamber; and a controller assigns flag data to a data table of a process chamber having largest first count data and when multiple substrates in the second storage container is transferred, control the transfer part based on the flag data from a different process chamber.

Abstract: There is provided a technique that includes adjusting a pressure of each of a plurality of process chambers, by adjusting an opening degree of a pressure-adjusting valve included in a common gas exhaust pipe, which is connected to a plurality of process chamber exhaust pipes and is disposed to merge respective process chamber exhaust pipes on a downstream side of the plurality of process chamber exhaust pipes, to a predetermined opening degree and by exhausting an atmosphere of each of the process chambers from the plurality of process chamber exhaust pipes and the common gas exhaust pipe while supplying an inert gas to the plurality of process chambers; processing a substrate in each of the process chambers; and detecting a fluctuation of pressures in the process chamber exhaust pipes by measuring, by one or more pressure detectors, the pressures of the process chamber exhaust pipes.

Abstract: A power transmission device is provided with: a rotary body arranged to receive the torque to rotate about an axis; a clutch including a clutch member engaging with the rotary body and axially movable and clutch teeth connectable with the clutch member to transmit the torque; a solenoid configured to generate a magnetic flux in response to input of electric power; a stator coupled with the solenoid as to conduct the magnetic flux and prevented from rotation about the axis; a rotor arranged to receive the magnetic flux from the stator and, when driven by the received magnetic flux, to create a rotational motion about the axis; and a conversion mechanism drivingly connected with the rotor to convert the rotational motion into a linear motion in a direction along the axis, the conversion mechanism including a thrust member transmitting the linear motion to the clutch member.

Abstract: There is provided a technique that includes: loading an m-th substrate into a process chamber, wherein m is an integer less than n; forming a film on the m-th substrate by heating the m-th substrate in the process chamber; unloading the m-th substrate from the process chamber; waiting for a predetermined time in the process chamber, in a state where the substrates are not present in the process chamber, after the act of unloading; loading a next substrate, which is one of the n substrates to be processed next, into the process chamber, after the act of waiting; and forming a film on the next substrate by heating the next substrate in the process chamber.

Abstract: There is provided a technique that includes adjusting a pressure of each of a plurality of process chambers, by adjusting an opening degree of a pressure-adjusting valve included in a common gas exhaust pipe, which is connected to a plurality of process chamber exhaust pipes and is disposed to merge respective process chamber exhaust pipes on a downstream side of the plurality of process chamber exhaust pipes, to a predetermined opening degree and by exhausting an atmosphere of each of the process chambers from the plurality of process chamber exhaust pipes and the common gas exhaust pipe while supplying an inert gas to the plurality of process chambers; processing a substrate in each of the process chambers; and detecting a fluctuation of pressures in the process chamber exhaust pipes by measuring, by one or more pressure detectors, the pressures of the process chamber exhaust pipes.

Abstract: There is provided a technique that includes: receiving type information corresponding to substrate processing; reading the type information and processing time information corresponding to the type information from a memory; calculating a ratio of a processing time of a predetermined process to a total time of the processing time information; selecting one or more reactors according to the ratio; setting the one or more reactors to be capable of performing the predetermined process; transferring a substrate corresponding to the type information to the one or more reactors; and performing the predetermined process corresponding to the type information in the one or more reactors.

Abstract: A substrate processing apparatus includes a plurality of storage containers mounted on a load port, each storage container storing a plurality of substrates; a plurality of process chambers for accommodating the substrates; a transfer part for transferring the substrates; a memory for storing data tables, including first count data, for the process chambers; an operation part, when multiple substrates in the first storage container is transferred to the process chambers in a predetermined order and performs a predetermined process in the process chambers in a state in which no substrate is present in a first process chamber, counting first count data for the first process chamber; and a controller assigns flag data to a data table of a process chamber having largest first count data and when multiple substrates in the second storage container is transferred, control the transfer part based on the flag data from a different process chamber.

Abstract: There is provided a technique that includes adjusting a pressure of each of a plurality of process chambers, by adjusting an opening degree of a pressure-adjusting valve included in a common gas exhaust pipe, which is connected to a plurality of process chamber exhaust pipes and is disposed to merge respective process chamber exhaust pipes on a downstream side of the plurality of process chamber exhaust pipes, to a predetermined opening degree and by exhausting an atmosphere of each of the process chambers from the plurality of process chamber exhaust pipes and the common gas exhaust pipe while supplying an inert gas to the plurality of process chambers; processing a substrate in each of the process chambers; and detecting a fluctuation of pressures in the process chamber exhaust pipes by measuring, by one or more pressure detectors, the pressures of the process chamber exhaust pipes.

Abstract: There is provided a technique that includes a load port on which a plurality of storage containers, each storage container storing a plurality of substrates, are mounted, a plurality of process chambers configured to be capable of accommodating the substrates, a transfer part configured to transfer the substrates stored in each storage container to each of the process chambers; an operation part configured to, when performing the process in a state in which a substrate is not present in each process chamber, count first count data of data tables for corresponding process chambers; a memory configured to store the data tables; and a controller configured to assign first transfer flag data to a data table of a process chamber having largest first count data and configured to control the transfer part based on the first transfer flag data so as to transfer the substrates in the predetermined order.

Abstract: Some embodiments of the present disclosure provide a technique capable of reducing an amount of deposits on a back surface of a rotary table. According to one aspect thereof, there is provided a technique that includes: a process chamber provided with process regions; a rotary table configured to rotate a substrate about a point outside the substrate such that the substrate sequentially passes through the process regions; and a rotator configured to rotate the rotary table, wherein the process regions include: a first region in which a process gas is supplied; and a second region in which an inert gas is supplied, and wherein a space corresponding to the second region below the rotary table is configured such that a pressure at the space corresponding to the second region below the rotary table is higher than a pressure at a space corresponding to the first region below the rotary table.

Abstract: (a) Loading a substrate into a process chamber; (b) supplying a processing gas including H2O-containing radicals to the substrate; (c) supplying a gas including a halogen element; (d) supplying a gas including one or both of an oxygen element and a nitrogen element after (c); and (e) repeating (c) and (d) are provided.

Abstract: Described herein is a technique capable of forming a film so as to fill an inside of a recess provided on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a film by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a gas to a substrate in a process chamber; and (a-2) vacuum-exhausting an inner atmosphere of the process chamber; and (b) generating a predetermined temperature difference between a front surface of the substrate and a back surface of the substrate at a predetermined timing during (a).