Patents by Inventor Toshiyuki Morishita
Toshiyuki Morishita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230186211Abstract: Provided are a work content analysis apparatus, method, and program for analyzing a state of congestion or proximity of persons such as workers in an analysis target region such as a factory, for each area in the analysis target region. According to an embodiment a work content analysis apparatus includes a first database, an accumulation unit, and a classification unit. The database stores position information indicative of a position of a person in the analysis target region together with time information, in association with identification information of the person. The accumulation unit acquires a cumulative value in a predetermined item based on the position information and the time information stored in the first database in association with the identification information of the person. The classification unit classifies the each area based on the cumulative value acquired by the accumulation unit.Type: ApplicationFiled: February 10, 2023Publication date: June 15, 2023Applicant: Toshiba Digital Solutions CorporationInventors: Ken ISHII, Jun TAKAHASHI, Hiroki TAKENOUCHI, Hitoshi KOBAYASHI, Takashi KUSAKABE, Yuto AKIMOTO, Kazuki YAMAMOTO, Toshiyuki MORISHITA
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Publication number: 20210398053Abstract: A work content analyzing apparatus of the present embodiment includes a first database storing state information indicating a state of each of one or a plurality of workers in association with time information and identification information of the worker, an estimation unit estimating the work content executed by the worker on the basis of at least two pieces of state information associated with same time in the state information stored in the first database, a specification unit specifying work time spent for the estimated work content on the basis of the state information stored in the first database and the time information associated with the state information, and an analysis unit analyzing the work content on the basis of the estimated work content and the specified work time.Type: ApplicationFiled: June 18, 2021Publication date: December 23, 2021Applicants: DENSO CORPORATION, Toshiba Digital Solutions CorporationInventors: Kazuki YAMAMOTO, Toshiyuki MORISHITA, Jun TAKAHASHI, Hiroki TAKENOUCHI, Ken ISHII, Hitoshi KOBAYASHI, Takashi KUSAKABE, Yuto AKIMOTO
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Patent number: 11152185Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.Type: GrantFiled: February 17, 2021Date of Patent: October 19, 2021Assignee: Denka Company LimitedInventors: Toshiyuki Morishita, Hiromitsu Chatani, Shimpei Hirokawa, Toshiyuki Ibayashi, Isao Sugimoto
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Publication number: 20210193427Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.Type: ApplicationFiled: February 17, 2021Publication date: June 24, 2021Inventors: Toshiyuki Morishita, Hiromitsu Chatani, Shimpei Hirokawa, Toshiyuki Ibayashi, Isao Sugimoto
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Patent number: 10957511Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.Type: GrantFiled: December 9, 2019Date of Patent: March 23, 2021Assignee: Denka Company LimitedInventors: Toshiyuki Morishita, Hiromitsu Chatani, Shimpei Hirokawa, Toshiyuki Ibayashi, Isao Sugimoto
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Publication number: 20200126750Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.Type: ApplicationFiled: December 9, 2019Publication date: April 23, 2020Inventors: Toshiyuki Morishita, Hiromitsu Chatani, Shimpei Hirokawa, Toshiyuki Ibayashi, Isao Sugimoto
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Patent number: 10553390Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.Type: GrantFiled: June 29, 2017Date of Patent: February 4, 2020Assignee: Denka Company LimitedInventors: Toshiyuki Morishita, Hiromitsu Chatani, Shimpei Hirokawa, Toshiyuki Ibayashi, Isao Sugimoto
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Publication number: 20190221399Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.Type: ApplicationFiled: June 29, 2017Publication date: July 18, 2019Applicant: Denka Company LimitedInventors: Toshiyuki MORISHITA, Hiromitsu CHATANI, Shimpei HIROKAWA, Toshiyuki IBAYASHI, Isao SUGIMOTO
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Patent number: 9496673Abstract: The present invention is a charged-particle gun (EG) in which a negative electrode (1) and a positive electrode (9) are integrated and assembled in advance, and which can be stored and transported in a state in which the negative electrode and the positive electrode are integrated, wherein the negative electrode and the positive electrode are connected by a conductor (11) during storage and transportation of the charged-particle gun. It is thereby possible to prevent an electrode tip of the charged-particle gun from being damaged by electrical discharge caused by static electricity during storage and transportation.Type: GrantFiled: February 21, 2012Date of Patent: November 15, 2016Assignee: DENKA COMPANY LIMITEDInventors: Toshiyuki Morishita, Yoshinori Terui, Shimpei Hirokawa
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Patent number: 9034721Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N?-type layer formed on an N+-type substrate. This trench is used to leave voids after the formation of a P?-type epitaxial film on the N?-type layer. Then, the voids formed in the N?-type layer can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.Type: GrantFiled: July 31, 2014Date of Patent: May 19, 2015Assignees: SUMCO CORPORATION, DENSO CORPORATIONInventors: Syouji Nogami, Tomonori Yamaoka, Shoichi Yamauchi, Nobuhiro Tsuji, Toshiyuki Morishita
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Patent number: 8956947Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N?-type layer formed on an N+-type substrate. This trench is used to leave voids after the formation of a P?-type epitaxial film on the N?-type layer. Then, the voids formed in the N?-type layer can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.Type: GrantFiled: July 31, 2014Date of Patent: February 17, 2015Assignees: Sumco Corporation, Denso CorporationInventors: Syouji Nogami, Tomonori Yamaoka, Shoichi Yamauchi, Nobuhiro Tsuji, Toshiyuki Morishita
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Patent number: 8936666Abstract: A noble metal adsorption agent includes algae or residue of algae having an amino group as a functional group. A noble metal is retrieved by a method including: adsorbing the noble metal on the noble metal adsorption agent; and retrieving the noble metal. The noble metal is solved in a liquid. Thus, by using the noble metal adsorption agent, the noble metal is selectively retrieved.Type: GrantFiled: June 20, 2011Date of Patent: January 20, 2015Assignees: Denso Corporation, Saga UniversityInventors: Hisaya Kato, Toshiyuki Morishita, Kinya Atsumi, Minoru Kurata, Katsutoshi Inoue, Hidetaka Kawakita, Keisuke Ohto
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Publication number: 20140342526Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N?-type layer formed on an N+-type substrate. This trench is used to leave voids after the formation of a P?-type epitaxial film on the N?-type layer. Then, the voids formed in the N?-type layer can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.Type: ApplicationFiled: July 31, 2014Publication date: November 20, 2014Inventors: Syouji NOGAMI, Tomonori YAMAOKA, Shoichi YAMAUCHI, Nobuhiro TSUJI, Toshiyuki MORISHITA
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Publication number: 20140342525Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N?-type layer formed on an N+-type substrate. This trench is used to leave voids after the formation of a P?-type epitaxial film on the N?-type layer. Then, the voids formed in the N?-type layer can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.Type: ApplicationFiled: July 31, 2014Publication date: November 20, 2014Inventors: Syouji NOGAMI, Tomonori YAMAOKA, Shoichi YAMAUCHI, Nobuhiro TSUJI, Toshiyuki MORISHITA
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Publication number: 20140342535Abstract: A semiconductor substrate preventing a void from being generated in an epitaxial film buried in a trench. An N-type first epitaxial film and first trenches are formed on an N+-type substrate body. A P-type second epitaxial film is buried in the first trenches. An N+-type third epitaxial film having the same composition as the first epitaxial film is formed on the first and second epitaxial films to form second trenches. A fourth epitaxial film is grown on the entire interior of the second trenches. The formation of the first and second trenches and the burying of the second and fourth epitaxial films are performed in a plurality of steps. Thus, the aspect ratio of the first and second trenches when the second and fourth epitaxial films are buried can be reduced. As a result, the second and fourth epitaxial films can be buried in the first and second trenches without causing a void.Type: ApplicationFiled: July 31, 2014Publication date: November 20, 2014Inventors: Syouji NOGAMI, Tomonori YAMAOKA, Shoichi YAMAUCHI, Nobuhiro TSUJI, Toshiyuki MORISHITA
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Patent number: 8835276Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N+-type substrate. This trench is used to leave voids after the formation of an N?-type layer. Then, the voids formed in the N+-type substrate can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.Type: GrantFiled: December 9, 2010Date of Patent: September 16, 2014Assignees: Sumco Corporation, Denso CorporationInventors: Syouji Nogami, Tomonori Yamaoka, Shoichi Yamauchi, Nobuhiro Tsuji, Toshiyuki Morishita
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Publication number: 20140000104Abstract: The present invention is a charged-particle gun (EG) in which a negative electrode (1) and a positive electrode (9) are integrated and assembled in advance, and which can be stored and transported in a state in which the negative electrode and the positive electrode are integrated, wherein the negative electrode and the positive electrode are connected by a conductor (11) during storage and transportation of the charged-particle gun. It is thereby possible to prevent an electrode tip of the charged-particle gun from being damaged by electrical discharge caused by static electricity during storage and transportation.Type: ApplicationFiled: February 21, 2012Publication date: January 2, 2014Applicant: DENKI KAGAKU KOGYO KABUSHIKI KAISHAInventors: Toshiyuki Morishita, Yoshinori Terui, Shimpei Hirokawa
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Patent number: 8593048Abstract: Provided are an electron source which allows a high-angle current density operation even at a low extraction voltage, and reduces excess current that causes vacuum deterioration; and an electronic device using the electron source. The electron source has a cathode composed of single-crystal tungsten, and a diffusion source provided in the intermediate portion of the cathode. In the cathode, the angle between the axial direction of the cathode and <100> orientation of the cathode is adjusted so that electrons to be emitted from the vicinity of the boundary between surface and surface formed on the tip of the cathode, are emitted substantially parallel to the axis of the cathode. The electronic device is provided with the electron source.Type: GrantFiled: November 30, 2010Date of Patent: November 26, 2013Assignee: Denki Kagaku Kogyo Kabushiki KaishaInventors: Ryozo Nonogaki, Toshiyuki Morishita
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Patent number: 8456076Abstract: An electron emitting source capable of preventing increase in an inter-terminal resistance and a manufacturing method of the electron emitting source. The electron emitting source comprises an electron emitting chip made of rare-earth hexaboride, and a heater constituted by a carbonaceous member for holding and heating the electron emitting chip, wherein an electrically conductive substance is provided in a gap between the electron emitting chip and the heater.Type: GrantFiled: July 11, 2008Date of Patent: June 4, 2013Assignee: Denki Kagaku Kogyo Kabushiki KaishaInventors: Toshiyuki Morishita, Yoshinori Terui
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Publication number: 20130049568Abstract: Provided are an electron source which allows a high-angle current density operation even at a low extraction voltage, and reduces excess current that causes vacuum deterioration; and an electronic device using the electron source. The electron source has a cathode composed of single-crystal tungsten, and a diffusion source provided in the intermediate portion of the cathode. In the cathode, the angle between the axial direction of the cathode and <100> orientation of the cathode is adjusted so that electrons to be emitted from the vicinity of the boundary between surface and surface formed on the tip of the cathode, are emitted substantially parallel to the axis of the cathode. The electronic device is provided with the electron source.Type: ApplicationFiled: November 30, 2010Publication date: February 28, 2013Applicant: DENKI KAGAKU KOGYO KABUSHIKI KAISHAInventors: Ryozo Nonogaki, Toshiyuki Morishita