Patents by Inventor Toshiyuki Morishita
Toshiyuki Morishita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120169210Abstract: An electron source is provided that operates at lower temperature and has a low work function and a narrower energy width. The electron source includes a porcelain insulator, two conductive terminals connected to the porcelain insulator, a filament formed between the conductive terminals, and a <100> orientation single crystal rod of at least one metal selected from the group consisting of tungsten, molybdenum, tantalum and rhenium connected to the filament. The rod has an electron-emitting face formed in at its tip region with its {100} crystal face exposed. The rod further includes a diffusion source in its central region that is made of a composite oxide formed from barium oxide and scandium oxide wherein the proportion of barium oxide being 50 mol % or more of BaO and the proportion of scandium oxide being 10 to 50 mol % as Sc2O3 when the mixed oxide is prepared.Type: ApplicationFiled: September 24, 2010Publication date: July 5, 2012Applicant: DENKI KAGAKU KOGYO KABUSHIKI KAISHAInventor: Toshiyuki Morishita
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Patent number: 8084011Abstract: A carbon nanotube manufacturing method wherein a catalyst is heated in a reaction chamber while the reaction chamber is filled with argon gas containing hydrogen. When a predetermined temperature is reached in the reaction chamber, the reaction chamber is evacuated. Then a raw material gas as a carbon source is charged and sealed in the reaction chamber whereupon the synthesis of carbon nanotube begins. Subsequently, when a condition in which the synthesis of carbon nanotubes has proceeded to a predetermined level is detected, gases in the reaction chamber are exhausted. Then, the raw material gas is changed and sealed in the reaction tube again. Thereafter, the charging (synthesizing) operation and the exhausting operation are repeated until the carbon nanotube with a desired film thickness are synthesized. A carbon nanotube manufacturing apparatus is also disclosed.Type: GrantFiled: December 7, 2007Date of Patent: December 27, 2011Assignee: DENSO CORPORATIONInventors: Yoshinobu Suzuki, Shinichi Mukainakano, Kenji Okeyui, Toshiyuki Morishita, Hisayoshi Ooshima
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Publication number: 20110308355Abstract: A noble metal adsorption agent includes algae or residue of algae having an amino group as a functional group. A noble metal is retrieved by a method including: adsorbing the noble metal on the noble metal adsorption agent; and retrieving the noble metal. The noble metal is solved in a liquid. Thus, by using the noble metal adsorption agent, the noble metal is selectively retrieved.Type: ApplicationFiled: June 20, 2011Publication date: December 22, 2011Applicants: Saga University, DENSO CORPORATIONInventors: Hisaya Kato, Toshiyuki Morishita, Kinya Atsumi, Minoru Kurata, Katsutoshi Inoue, Hidetaka Kawakita, Keisuke Ohto
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Patent number: 8023698Abstract: An information device operation apparatus includes an image capturing device, an illumination device, a controller, image storage device, operation object extracting device, detection device, and signal output device. The image storage device stores a plurality of images that are acquired by the image capturing device under a plurality of illumination intensity conditions. The operation object extracting device extracts the operation object by comparing the plurality of images. The detection device detects at least one of a predetermined shape and a movement of the operation object that is extracted by the operation object extracting device. The signal output device outputs a signal to the target device, the signal corresponding to the at least one of the predetermined shape and the movement of the operation object detected by the detection device.Type: GrantFiled: March 25, 2008Date of Patent: September 20, 2011Assignee: DENSO CORPORATIONInventors: Shinji Niwa, Takeshi Kawashima, Ichiro Akahori, Toshiyuki Morishita
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Publication number: 20110076830Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an aligment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N+-type substrate. This trench is used to leave voids after the formation of an N?-type layer. Then, the voids formed in the N+-type substrate can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.Type: ApplicationFiled: December 9, 2010Publication date: March 31, 2011Applicants: SUMCO CORPORATION, DENSO CORPORATIONInventors: Syouji NOGAMI, Tomonori YAMAOKA, Shoichi YAMAUCHI, Nobuhiro TSUJI, Toshiyuki MORISHITA
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Patent number: 7905090Abstract: A steam engine has a pipe shaped fluid container, a heating and cooling devices respectively provided at a heating and cooling portions of the fluid container, and an output device connected to the fluid container, so that the output device is operated by the fluid pressure change in the fluid container, to generate an electric power. In such a steam engine, an inner radius “r1” of the cooling portion is made to almost equal to a depth “?1” of the thermal penetration, which is calculated by the following formula (1); ? 1 = 2 ? a 1 ? ( 1 ) wherein, “a1” is a heat diffusivity of the working fluid at its low pressure, and “?” is an angular frequency of the movement of the working fluid.Type: GrantFiled: August 11, 2008Date of Patent: March 15, 2011Assignee: Denso CorporationInventors: Shinichi Yatsuzuka, Shuzo Oda, Yasumasa Hagiwara, Toshiyuki Morishita, Katsuya Komaki
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Patent number: 7855384Abstract: A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of each trench covering the gate layer; a source electrode on the source layer; and a diode portion in or under the trench contacting the drift layer to provide a diode. The drift layer between the gate layer on the sidewalls of adjacent two trenches provides a channel region. The diode portion is coupled with the source electrode, and insulated from the gate layer with the insulation film.Type: GrantFiled: April 10, 2007Date of Patent: December 21, 2010Assignees: DENSO CORPORATION, Hitachi Ltd.Inventors: Tsuyoshi Yamamoto, Toshio Sakakibara, Hiroki Nakamura, Toshiyuki Morishita, Takasumi Ooyanagi, Atsuo Watanabe
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Publication number: 20100301736Abstract: An electron emitting source capable of preventing increase in an inter-terminal resistance and a manufacturing method of the electron emitting source. The electron emitting source comprises an electron emitting chip made of rare-earth hexaboride, and a heater constituted by a carbonaceous member for holding and heating the electron emitting chip, wherein an electrically conductive substance is provided in a gap between the electron emitting chip and the heater.Type: ApplicationFiled: July 11, 2008Publication date: December 2, 2010Inventors: Toshiyuki Morishita, Yoshinori Terui
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Publication number: 20100278717Abstract: A carbon nanotube manufacturing method wherein a catalyst is heated in a reaction chamber while the reaction chamber is filled with argon gas containing hydrogen. When a predetermined temperature is reached in the reaction chamber, the reaction chamber is evacuated. Then a raw material gas as a carbon source is charged and sealed in the reaction chamber whereupon the synthesis of carbon nanotube begins. Subsequently, when a condition in which the synthesis of carbon nanotubes has proceeded to a predetermined level is detected, gases in the reaction chamber are exhausted. Then, the raw material gas is changed and sealed in the reaction tube again. Thereafter, the charging (synthesizing) operation and the exhausting operation are repeated until the carbon nanotube with a desired film thickness are synthesized.Type: ApplicationFiled: December 7, 2007Publication date: November 4, 2010Applicant: DENSO CORPORATIONInventors: Yoshinobu Suzuki, Shinichi Mukainakano, Kenji Okeyui, Toshiyuki Morishita, Hisayoshi Ooshima
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Patent number: 7799588Abstract: A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.Type: GrantFiled: April 10, 2007Date of Patent: September 21, 2010Assignee: DENSO CORPORATIONInventors: Junji Oohara, Hisaya Katoh, Toshiyuki Morishita, Yukihiro Takeuchi
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Patent number: 7763504Abstract: A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.Type: GrantFiled: February 19, 2008Date of Patent: July 27, 2010Assignees: DENSO CORPORATION, Hitachi, Ltd.Inventors: Rajesh Kumar, Tsuyoshi Yamamoto, Hiroki Nakamura, Toshiyuki Morishita, Takasumi Ohyanagi, Atsuo Watanabe
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Patent number: 7732821Abstract: The SiC semiconductor device includes a substrate of a first conduction type made of silicon carbide, a drift layer of the first conduction type made of silicon carbide, the drift layer being less doped than the substrate, a cell portion constituted by a part of the substrate and a part of the drift layer, a circumferential portion constituted by another part of the substrate and another part of the drift layer, the circumferential portion being formed so as to surround the cell portion, and a RESURF layer of a second conduction type formed in a surface portion of the drift layer so as to be located in the circumferential portion. The RESURF layer is constituted by first and second RESURF layers having different impurity concentrations, the second RESURF layer being in contact with an outer circumference of the first RESURF layer and extending to a circumference of the cell portion.Type: GrantFiled: March 11, 2008Date of Patent: June 8, 2010Assignee: DENSO CORPORATIONInventors: Naohiro Suzuki, Tsuyoshi Yamamoto, Toshiyuki Morishita
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Publication number: 20090273102Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an aligment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench 11 is formed in an alignment region of an N+-type substrate 1. This trench 11 is used to leave voids 3 after the formation of an N?-type layer 2. Then, the voids 3 formed in the N+-type substrate 1 can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.Type: ApplicationFiled: October 5, 2006Publication date: November 5, 2009Inventors: Syouji Nogami, Tomonori Yamaoka, Shoichi Yamauchi, Nobuhiro Tsuji, Toshiyuki Morishita
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Publication number: 20090213951Abstract: In an OFDM type radio transmitter, an orthogonal modulator performs an orthogonal modulation of an I-component and a Q-component, an orthogonal component output circuit produces the I-component and the Q-component in accordance with set values, and a correction circuit sets the I-component and the Q-component to zero. The correction circuit further corrects offset values of the I-component and the Q-component by way of the orthogonal component output circuit to minimize an output power of the orthogonal modulator. The number of times of changing the set values of the orthogonal component output circuit is limited to predetermined values in correcting the offset values.Type: ApplicationFiled: January 21, 2009Publication date: August 27, 2009Applicant: DENSO CORPORATIONInventors: Minoru Okada, Kenichi Koeda, Toshiyuki Morishita
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Patent number: 7532404Abstract: An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.Type: GrantFiled: September 28, 2006Date of Patent: May 12, 2009Assignee: DENSO CORPORATIONInventors: Junji Oohara, Kazuhiko Kano, Yoshitaka Noda, Yukihiko Takeuchi, Toshiyuki Morishita
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Patent number: 7493751Abstract: An external combustion engine is disclosed, comprising a container (11) for sealing a working liquid (12) in a way adapted to allow the liquid to flow therein, a heater (13) for heating and vaporizing the working liquid (12) in the container (11), and a cooler (14) for cooling and liquefying the vapor of the working liquid (12) heated and vaporized by the heater (13). The displacement of the working liquid (12) caused by the volume change of the vapor of the working liquid (12) is output by being converted into mechanical energy. In the heated portion (11d) of the container (11) for vaporizing the working liquid (12), the direction of displacement of the working liquid (12) at the parts (17, 19) far from the cooler (14) is changed with respect to the direction of displacement at the part (16) near to the cooler (14).Type: GrantFiled: March 13, 2007Date of Patent: February 24, 2009Assignee: Denso CorporationInventors: Shuzo Oda, Shinichi Yatsuzuka, Katsuya Komaki, Shunji Okemoto, Toshiyuki Morishita
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Publication number: 20080307790Abstract: A steam engine has a pipe shaped fluid container, a heating and cooling devices respectively provided at a heating and cooling portions of the fluid container, and an output device connected to the fluid container, so that the output device is operated by the fluid pressure change in the fluid container, to generate an electric power. In such a steam engine, an inner radius “r1” of the cooling portion is made to almost equal to a depth “?1” of the thermal penetration, which is calculated by the following formula (1); ? 1 = 2 ? a 1 ? ( 1 ) wherein, “a1” is a heat diffusivity of the working fluid at its low pressure, and “?” is an angular frequency of the movement of the working fluid.Type: ApplicationFiled: August 11, 2008Publication date: December 18, 2008Applicant: DENSO CORPORATIONInventors: Shinichi Yatsuzuka, Shuzo Oda, Yasumasa Hagiwara, Toshiyuki Morishita, Katsuya Komaki
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Publication number: 20080240507Abstract: An information device operation apparatus includes an image capturing device, an illumination device, a controller, image storage device, operation object extracting device, detection device, and signal output device. The image storage device stores a plurality of images that are acquired by the image capturing device under a plurality of illumination intensity conditions. The operation object extracting device extracts the operation object by comparing the plurality of images. The detection device detects at least one of a predetermined shape and a movement of the operation object that is extracted by the operation object extracting device. The signal output device outputs a signal to the target device, the signal corresponding to the at least one of the predetermined shape and the movement of the operation object detected by the detection device.Type: ApplicationFiled: March 25, 2008Publication date: October 2, 2008Applicant: DENSO CORPORATIONInventors: Shinji Niwa, Takeshi Kawashima, Ichiro Akahori, Toshiyuki Morishita
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Publication number: 20080224150Abstract: The SiC semiconductor device includes a substrate of a first conduction type made of silicon carbide, a drift layer of the first conduction type made of silicon carbide, the drift layer being less doped than the substrate, a cell portion constituted by a part of the substrate and a part of the drift layer, a circumferential portion constituted by another part of the substrate and another part of the drift layer, the circumferential portion being formed so as to surround the cell portion, and a RESURF layer of a second conduction type formed in a surface portion of the drift layer so as to be located in the circumferential portion. The RESURF layer is constituted by first and second RESURF layers having different impurity concentrations, the second RESURF layer being in contact with an outer circumference of the first RESURF layer and extending to a circumference of the cell portion.Type: ApplicationFiled: March 11, 2008Publication date: September 18, 2008Applicant: DENSO CORPORATIONInventors: Naohiro Suzuki, Tsuyoshi Yamamoto, Toshiyuki Morishita
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Patent number: 7424802Abstract: A steam engine has a pipe shaped fluid container, a heating and cooling devices respectively provided at a heating and cooling portions of the fluid container, and an output device connected to the fluid container, so that the output device is operated by the fluid pressure change in the fluid container, to generate an electric power. In such a steam engine, an inner radius “r1” of the cooling portion is made to almost equal to a depth “?1” of thermal penetration, which is calculated by the following formula (1); ? 1 = 2 ? a 1 ? ( 1 ) wherein, “a1” is a heat diffusivity of the working fluid at its low pressure, and “?” is an angular frequency of the movement of the working fluid.Type: GrantFiled: May 19, 2005Date of Patent: September 16, 2008Assignee: Denso CorporationInventors: Shinichi Yatsuzuka, Shuzo Oda, Yasumasa Hagiwara, Toshiyuki Morishita, Katsuya Komaki