Abstract: A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.

Abstract: A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.

Abstract: A heat transport medium includes a single solvent and fine particles 1 of a predetermined material dispersed in the solvent, and transports heat transferred from a heat transfer surface 5. Fine particles 1 includes one or more atoms, and structural substances 3 are arranged on a surface of fine particles 1 to protect it. Furthermore, structural substances 3 having a functional group capable of adsorbing onto fine particles 1 are floated around fine particles 1 in a state where structural substances are not adsorbed onto the fine particle. Also, structural substances 3 adsorbed onto the surface of fine particles 1 are arranged so as to form spaces which enable the floating structural substances 3 to adsorb around the fine particle.

Abstract: A heat transport fluid includes a solvent, particles dispersed in the solvent, coating agents attached to surfaces of the particles, and organic components dispersed in the solvent. The heat transport fluid can be used for a heat transport structure that includes a first member having a first temperature, a second member having a second temperature higher than the first temperature, and a circulation device for circulating the heat transport fluid through the first member and the second member.

Abstract: A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, a gate contact layer and a gate electrode, which can be supplied with voltages from the outside, are formed on one surface of a semiconductor substrate or on the bottom of the trench groove. A metal conductor (virtual gate electrode) is formed in ohmic contact with a p++ contact layer of the gate region on the bottom of the trench grooves independently of the gate electrode. The virtual gate electrode is electrically isolated from the gate electrode and an external wire.

Abstract: A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.

Abstract: A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of each trench covering the gate layer; a source electrode on the source layer; and a diode portion in or under the trench contacting the drift layer to provide a diode. The drift layer between the gate layer on the sidewalls of adjacent two trenches provides a channel region. The diode portion is coupled with the source electrode, and insulated from the gate layer with the insulation film.

Abstract: A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, a gate contact layer and a gate electrode, which can be supplied with voltages from the outside, are formed on one surface of a semiconductor substrate or on the bottom of the trench groove. A metal conductor (virtual gate electrode) is formed in ohmic contact with a p++ contact layer of the gate region on the bottom of the trench grooves independently of the gate electrode. The virtual gate electrode is electrically isolated from the gate electrode and an external wire.

Abstract: An external combustion engine is disclosed, comprising a container (11) for sealing a working liquid (12) in a way adapted to allow the liquid to flow therein, a heater (13) for heating and vaporizing the working liquid (12) in the container (11), and a cooler (14) for cooling and liquefying the vapor of the working liquid (12) heated and vaporized by the heater (13). The displacement of the working liquid (12) caused by the volume change of the vapor of the working liquid (12) is output by being converted into mechanical energy. In the heated portion (11d) of the container (11) for vaporizing the working liquid (12), the direction of displacement of the working liquid (12) at the parts (17, 19) far from the cooler (14) is changed with respect to the direction of displacement at the part (16) near to the cooler (14).

Abstract: An information processing system for use in a vehicle includes a main body for various operations and a portable device in data communication with the main body. The portable device is installed in front of a seat, and has a speaker system for outputting an audible signal. A virtually created source of the audible signal whose location or direction relative to the driver and other occupants of the vehicle is identified by the information processing system. A sound field localization based on a data processing for the audible signal makes the sound signal heard from the identified direction. Perception of the audible signal from the virtually created source of the audible signal facilitates awareness of a surrounding environment of the vehicle.

Abstract: A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, a gate contact layer and a gate electrode, which can be supplied with voltages from the outside, are formed on one surface of a semiconductor substrate or on the bottom of the trench groove. A metal conductor (virtual gate electrode) is formed in ohmic contact with a p++ contact layer of the gate region on the bottom of the trench grooves independently of the gate electrode. The virtual gate electrode is electrically isolated from the gate electrode and an external wire.

Abstract: A steam engine has a looped fluid container, in which working fluid is filled. A heating device, a cooling device and an output device are arranged at the fluid container. A lower side valve is provided at a fluid passage of the fluid container between the heating device and the output device. An upper side valve is provided at another fluid passage of the fluid container between the cooling device and the output device. The upper and lower valves are respectively controlled to open and close the respective fluid passages at proper timings, to increase heat efficiency.

Abstract: An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.

Abstract: An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.

Abstract: In a steam engine having a heating device, a cooling device, and an output device, the output device comprises a piston reciprocally moving by a self-excited fluid vibration of a working fluid in a fluid container. The piston is reciprocally moved by the output device for a certain period before starting an operation of the steam engine, so that the working fluid is moved to an inside space of the heating device. Since the working fluid is surely heated and vaporized by the heating device, the fluid vibration is stably started, and as a result, the operation of the steam engine can be smoothly started.

Abstract: A speech interaction apparatus starts pushing information to a user and executes a speech interaction about the information in a case where (i) an interaction starting condition for starting pushing the information is set and (ii) the interaction starting condition is satisfied. The speech interaction apparatus includes an interaction policy setting unit and a speech interaction unit. The interaction policy setting unit sets, in consideration of a drive route intended by the user, an interaction policy of certain information which satisfies an interaction starting condition. The speech interaction unit pushes the certain information and executes a speech interaction about the certain information in accordance with the interaction policy set by the interaction policy setting unit. This enables execution of a user-friendly speech interaction while maintaining safety during a drive.

Abstract: A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, a gate contact layer and a gate electrode, which can be supplied with voltages from the outside, are formed on one surface of a semiconductor substrate or on the bottom of the trench groove. A metal conductor (virtual gate electrode) is formed in ohmic contact with a p++ contact layer of the gate region on the bottom of the trench grooves independently of the gate electrode. The virtual gate electrode is electrically isolated from the gate electrode and an external wire.

Abstract: A stem engine has a fluid container, a heating device and a cooling device. The fluid container has an outer pipe having an upper closed end, and an inner pipe provided in the outer pipe and having a fluid inlet port through which the inside of the inner pipe is operatively communicated with the outside of the inner pipe. The inner pipe has a pressure control device at its lower end, and a fluid injection port at its upper end for injecting the working fluid in the inner pipe into a space defined between the inner pipe and the outer pipe, when the pressure in the inner pipe is increased. The working fluid injected into the space between the inner and outer pipes is heated and vaporized by the heating device, so that volumetric expansion of the working fluid takes place to increase fluid pressure in the fluid container. The vaporized steam is then cooled and liquidized by the cooling device and thereby the volumetric contraction takes place, so that the fluid pressure is decreased.

Abstract: A steam engine has a looped fluid container, in which working fluid is filled. A heating device, a cooling device and an output device are arranged at the fluid container. A lower side valve is provided at a fluid passage of the fluid container between the heating device and the output device. An upper side valve is provided at another fluid passage of the fluid container between the cooling device and the output device. The upper and lower valves are respectively controlled to open and close the respective fluid passages at proper timings, to increase heat efficiency.

Abstract: An information processing system for use in a vehicle includes a main body for various operations and a portable device in data communication with the main body. The portable device is installed in front of a seat, and has a speaker system for outputting an audible signal. A virtually created source of the audible signal whose location or direction relative to the driver and other occupants of the vehicle is identified by the information processing system. A sound field localization based on a data processing for the audible signal makes the sound signal heard from the identified direction. Perception of the audible signal from the virtually created source of the audible signal facilitates awareness of a surrounding environment of the vehicle.