Patents by Inventor Tri-Rung Yew

Tri-Rung Yew has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10615449
    Abstract: An electrode material for a secondary battery and a secondary battery are provided. The electrode material for the secondary battery includes tin-manganese-nickel-oxide. The secondary battery includes a cathode, an anode, an electrolyte, and a package structure, wherein the anode includes the electrode material for the secondary battery.
    Type: Grant
    Filed: June 15, 2018
    Date of Patent: April 7, 2020
    Assignee: National Tsing Hua University
    Inventors: Yu-Ying Chu, Ying-Chan Hung, Han-Yi Chen, Tri-Rung Yew
  • Publication number: 20190305357
    Abstract: An electrode material for a secondary battery and a secondary battery are provided. The electrode material for the secondary battery includes tin-manganese-nickel-oxide. The secondary battery includes a cathode, an anode, an electrolyte, and a package structure, wherein the anode includes the electrode material for the secondary battery.
    Type: Application
    Filed: June 15, 2018
    Publication date: October 3, 2019
    Applicant: National Tsing Hua University
    Inventors: Yu-Ying Chu, Ying-Chan Hung, Han-Yi Chen, Tri-Rung Yew
  • Patent number: 10079277
    Abstract: A method of fabricating a metal-insulator-metal capacitor includes providing a dielectric layer. The dielectric layer is etched to form a first hole including a first convex profile bulging into the dielectric layer. Subsequently, the dielectric layer is etched to form a second hole including a second convex profile bulging into the dielectric layer. A first metal layer is formed to conformally cover the capacitor trench. An insulating layer is formed to cover the first metal layer. Finally, a second metal layer is formed covering the insulating layer.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: September 18, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tri-Rung Yew, Hung-Chan Lin, Li-Wei Feng, Chien-Ting Ho, Chia-Lung Chang
  • Publication number: 20180151666
    Abstract: A method of fabricating a metal-insulator-metal capacitor includes providing a dielectric layer. The dielectric layer is etched to form a first hole including a first convex profile bulging into the dielectric layer. Subsequently, the dielectric layer is etched to form a second hole including a second convex profile bulging into the dielectric layer. A first metal layer is formed to conformally cover the capacitor trench. An insulating layer is formed to cover the first metal layer. Finally, a second metal layer is formed covering the insulating layer.
    Type: Application
    Filed: November 28, 2016
    Publication date: May 31, 2018
    Inventors: Tri-Rung Yew, Hung-Chan Lin, Li-Wei Feng, Chien-Ting Ho, Chia-Lung Chang
  • Patent number: 9662026
    Abstract: The present invention provides a three-dimensional electrode having high cell affinity and capacitive coupling, comprising a pillar portion and a spherical portion, wherein the diameter of the spherical portion is larger than that of the pillar portion, and the carbon nanotubes are coated on the spherical portion, and pillar portion and the spherical portion are made of material selected from metal materials. The present invention may be used for developing biological probes having high cell affinity and capacitive coupling so as to provide high accuracy for measurement of neural cells or electrocardiograms and prevent from distortion.
    Type: Grant
    Filed: February 13, 2015
    Date of Patent: May 30, 2017
    Assignee: National Tsing Hua University
    Inventors: I-An Pan, Tri-Rung Yew, Hsin Chen, Yung-Jen Chuang
  • Patent number: 9450184
    Abstract: A multilayer-stacked resistive random access memory device includes: first and second electrode layers; a resistive oxide layer which is electrically coupled to the first and second electrode layers, which exhibits resistive switching characteristics and which includes a metal oxide containing a first metal selected from the group consisting of W, Ti, Zr, Sn, Ta, Ni, Ag, Cu, Co, Hf, Ru, Mo, Cr, Fe, Al, and combinations thereof; and a sulfide layer contacting the resistive oxide layer and including a metal sulfide that contains a second metal that is the same as the first metal.
    Type: Grant
    Filed: June 11, 2015
    Date of Patent: September 20, 2016
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Tri-Rung Yew, Ying-Chan Hung, Tsang-Hsuan Wang, Pin Chang
  • Publication number: 20160240779
    Abstract: A multilayer-stacked resistive random access memory device includes: first and second electrode layers; a resistive oxide layer which is electrically coupled to the first and second electrode layers, which exhibits resistive switching characteristics and which includes a metal oxide containing a first metal selected from the group consisting of W, Ti, Zr, Sn, Ta, Ni, Ag, Cu, Co, Hf, Ru, Mo, Cr, Fe, Al, and combinations thereof; and a sulfide layer contacting the resistive oxide layer and including a metal sulfide that contains a second metal that is the same as the first metal.
    Type: Application
    Filed: June 11, 2015
    Publication date: August 18, 2016
    Applicant: National Tsing Hua University
    Inventors: Tri-Rung YEW, Ying-Chan HUNG, Tsang-Hsuan WANG, Pin CHANG
  • Publication number: 20160120424
    Abstract: The present invention provides a three-dimensional electrode having high cell affinity and capacitive coupling, comprising a pillar portion and a spherical portion, wherein the diameter of the spherical portion is larger than that of the pillar portion, and the carbon nanotubes are coated on the spherical portion, and pillar portion and the spherical portion are made of material selected from metal materials. The present invention may be used for developing biological probes having high cell affinity and capacitive coupling so as to provide high accuracy for measurement of neural cells or electrocardiograms and prevent from distortion.
    Type: Application
    Filed: February 13, 2015
    Publication date: May 5, 2016
    Inventors: I-An PAN, Tri-Rung YEW, Hsin CHEN, Yung-Jen CHUANG
  • Publication number: 20150259783
    Abstract: An electron beam apparatus for patterned metal reduction, applied to generate metal lines or patterns on a substrate, includes an electron beam generating system with functions of collimating, focusing and scanning electron beams, an electron-transparent membrane of a vacuum chamber for allowing the electron beam to penetrate through, a stage mounted at a position to face the electron-transparent membrane, a substrate placed on the stage to face the electron-transparent membrane, a thin liquid layer containing metal ions and mounted on the substrate, and an environment control device for controlling the temperature, the pressure and the atmosphere around the substrate. A method for using the electron beam apparatus to generate the metal lines or patterns on the substrate is to focus the electron beam onto the substrate and have the electron beam to scan the substrate repeatedly along a predetermined path till a desired metal pattern is reduced on the substrate.
    Type: Application
    Filed: June 20, 2014
    Publication date: September 17, 2015
    Inventors: SHIH-EN LAI, YING-CHAN HUNG, PIN CHANG, TRI-RUNG YEW
  • Publication number: 20150093840
    Abstract: A colorimetric immunoassay of the present invention uses nanostructured material with high absorption and high scattering ability as a label material for biosensors. Subject matters to be measured may be characterized or quantified by determining the changes in optical properties of the nanostructured material. The biosensor of the present invention may be operated in broad light wavelength range and detected by direct observation with naked eye. The biosensor of the present invention may be also provided with advantages such as higher sensitivity and lower cost.
    Type: Application
    Filed: December 5, 2013
    Publication date: April 2, 2015
    Applicant: NATIONAL TSING HUA UNIVERSITY
    Inventors: Jing-Huei HUANG, Ying-Chan HUNG, Tri-Rung YEW, Pin CHANG
  • Publication number: 20150075594
    Abstract: The invention proposes W18O49-type tungsten oxide nanomaterial, which is fabricated with a precursor comprising WS2 and formed by thermal oxidation from the precursor. Applications using W18O49-type tungsten oxide nanomaterial in light sensor, MOSFET and solar cell, are also disclosed.
    Type: Application
    Filed: January 17, 2014
    Publication date: March 19, 2015
    Applicant: National Tsing Hua University
    Inventors: Tri-Rung YEW, Yu-Ming HSU
  • Patent number: 8937241
    Abstract: A self-assembly nano-composite solar cell comprises a substrate, a first electrode layer, a composite absorption layer and a second electrode layer. The first electrode layer is formed on the substrate. The composite absorption layer is formed over the first electrode layer and includes a plurality of vertical nano-pillars, a plurality of gaps each formed between any two adjacent nano-pillars, and a plurality of bismuth sulfide nano-particles filled into the gaps and attached to the nano-pillars. The second electrode layer is formed over the composite absorption layer. Through etching and soaking in solutions, the composite absorption layer with nano-pillars and bismuth sulfide nano-particles is fabricated to form a self-assembly nano-composite solar cell having high power conversion efficiency.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: January 20, 2015
    Assignee: National Tsing Hua University
    Inventors: Che-Ning Yeh, Chun-Te Ho, Tri-Rung Yew
  • Patent number: 8609981
    Abstract: A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.
    Type: Grant
    Filed: May 10, 2011
    Date of Patent: December 17, 2013
    Assignee: National Tsing Hua University
    Inventors: Han-Yi Chen, Chia-Hsiang Chen, Huan-Chieh Su, Kuo-Liang Liu, Tri-Rung Yew
  • Patent number: 8593052
    Abstract: The present invention discloses a method for modifying a carbon nanotube electrode interface, which modifies carbon nanotubes used as a neuron-electrode interface by performing three stages of modifications and comprises the steps of: carboxylating carbon nanotubes to provide carboxyl functional groups and improve the hydrophilicity of the carbon nanotubes; acyl-chlorinating the carboxylated carbon nanotubes to replace the hydroxyl functional groups of the carboxyl functional groups with chlorine atoms; and aminating the acyl-chlorinated carbon nanotubes to replace the chlorine atoms with a derivative having amine functional groups at the terminal thereof. The modified carbon nanotubes used as the neuron-electrode interface has lower impedance and higher adherence to nerve cells. Thus is improved the quality of neural signal measurement.
    Type: Grant
    Filed: December 15, 2009
    Date of Patent: November 26, 2013
    Assignee: National Tsing Hua University
    Inventors: Shiang-Jie Yen, Huan-Chieh Su, Tri-Rung Yew, Yen-Chung Chang, Wei-Lun Hsu, Shih-Rung Yeh
  • Publication number: 20130307520
    Abstract: The present invention discloses a method for modifying a carbon nanotube electrode interface, which modifies carbon nanotubes used as a neuron-electrode interface by performing three stages of modifications and comprises the steps of: carboxylating carbon nanotubes to provide carboxyl functional groups and improve the hydrophilicity of the carbon nanotubes; acyl-chlorinating the carboxylated carbon nanotubes to replace the hydroxyl functional groups of the carboxyl functional groups with chlorine atoms; and aminating the acyl-chlorinated carbon nanotubes to replace the chlorine atoms with a derivative having amine functional groups at the terminal thereof. The modified carbon nanotubes used as the neuron-electrode interface has lower impedance and higher adherence to nerve cells. Thus is improved the quality of neural signal measurement.
    Type: Application
    Filed: December 15, 2009
    Publication date: November 21, 2013
    Inventors: Shiang-Jie YEN, Huan-Chieh Su, Tri-Rung Yew, Yen-Chung Chang, Wei-Lun Hsu, Shih-Rung Yeh
  • Publication number: 20130284268
    Abstract: A self-assembly nano-composite solar cell comprises a substrate, a first electrode layer, a composite absorption layer and a second electrode layer. The first electrode layer is formed on the substrate. The composite absorption layer is formed over the first electrode layer and includes a plurality of vertical nano-pillars, a plurality of gaps each formed between any two adjacent nano-pillars, and a plurality of bismuth sulfide nano-particles filled into the gaps and attached to the nano-pillars. The second electrode layer is formed over the composite absorption layer. Through etching and soaking in solutions, the composite absorption layer with nano-pillars and bismuth sulfide nano-particles is fabricated to form a self-assembly nano-composite solar cell having high power conversion efficiency.
    Type: Application
    Filed: April 27, 2012
    Publication date: October 31, 2013
    Inventors: Che-Ning YEH, Chun-Te HO, Tri-Rung YEW
  • Patent number: 8461037
    Abstract: A method for fabricating interconnections with carbon nanotubes of the present invention comprises the following steps: forming a dual-layer that contains a catalytic layer and an upper covering layer on the periphery of a hole connecting with a substrate; and growing carbon nanotubes on the catalytic layer with the upper covering layer covering the carbon nanotubes. The present invention grows the carbon nanotubes between the catalytic layer and the upper covering layer. The upper covering layer protects the catalytic layer from being oxidized and thus enhances the growth of the carbon nanotubes. The carbon nanotubes are respectively connected with the lower substrate and an upper conductive wire via the catalytic layer and the upper covering layer, which results in a lower contact resistance. Moreover, the upper covering layer also functions as a metal-diffusion barrier layer to prevent metal from spreading to other materials via diffusion or other approaches.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: June 11, 2013
    Assignee: National Tsing Hua University
    Inventors: Hsin-wei Wu, Chung-Min Tsai, Tri-Rung Yew
  • Patent number: 8368057
    Abstract: An organic thin film transistor includes: a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic active layer. The organic active layer includes an organic semiconductor compound represented by the following formula (A) as defined in the specification.
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: February 5, 2013
    Assignee: National Tsing Hua University
    Inventors: Yu-Ping Wang, Heng-Wen Ting, Chung-Min Tsai, Tri-Rung Yew
  • Patent number: 8283469
    Abstract: The present invention discloses a soluble and air-stable perylene diimide (PDI) derivative to function as an N-type organic semiconductor material. In the PDI derivative of the present invention, the core thereof is substituted by electron withdrawing groups, and the side chains thereof are substituted by benzene functional groups, whereby are promoted the solubility and air-stability of the molecule. The PDI derivative of the present invention can be used to fabricate an organic semiconductor element via a soluble process at a low temperature and under an atmospheric environment.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: October 9, 2012
    Assignee: National Tsing Hua University
    Inventors: Szu-Ying Chen, Heng-Wen Ting, Tri-Rung Yew, Jeng-Hua Wei
  • Publication number: 20120152335
    Abstract: A full-spectrum absorption solar cell adopts cobalt-doped tin dioxide as an N-type material. Thereby, a solar cell of the present invention can be fabricated by a spray method in a hot pressing fabrication process. The present invention does not need to fabricate a solar cell in a vacuum or furnace system and thus can solve the high cost problem of the conventional technology. The N-type cobalt-doped layer can absorb full spectrum of sunlight. The N-type cobalt-doped layer can be used to fabricate a solar cell with a low-temperature fabrication process. Thus, the present invention does not need to adopt a high-temperature resistant substrate (such as silicon chip or glass) used in the conventional high-temperature fabrication process but can adopt a substrate made of plastic. And, the conversion efficiency of the invention can achieve 1.2%, it is a significant improvement over the oxide-based nanostructures heterojunction solar cells in the world.
    Type: Application
    Filed: December 20, 2010
    Publication date: June 21, 2012
    Inventors: Hui-Ying SHIU, Tri-Rung Yew