Patents by Inventor Tsann Lin

Tsann Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11088201
    Abstract: Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.
    Type: Grant
    Filed: April 2, 2019
    Date of Patent: August 10, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsann Lin, Chien-Min Lee, Ji-Feng Ying
  • Publication number: 20210036055
    Abstract: A memory device including bit lines, auxiliary lines, selectors, and memory cells is provided. The word lines are intersected with the bit lines. The auxiliary lines are disposed between the word lines and the of bit lines. The selectors are inserted between the bit lines and the auxiliary lines. The memory cells are inserted between the word lines and the auxiliary lines.
    Type: Application
    Filed: January 9, 2020
    Publication date: February 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ji-Feng Ying, Jhong-Sheng Wang, Tsann Lin
  • Publication number: 20200136018
    Abstract: A magnetic memory including a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.
    Type: Application
    Filed: October 3, 2019
    Publication date: April 30, 2020
    Inventors: Ji-Feng YING, Jhong-Sheng WANG, Tsann LIN
  • Publication number: 20200098408
    Abstract: Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.
    Type: Application
    Filed: July 5, 2019
    Publication date: March 26, 2020
    Inventors: Tsann Lin, Ji-Feng Ying, Chih-Chung Lai
  • Publication number: 20200006425
    Abstract: Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.
    Type: Application
    Filed: April 2, 2019
    Publication date: January 2, 2020
    Inventors: Tsann Lin, Chien-Min Lee, Ji-Feng Ying
  • Publication number: 20190189915
    Abstract: The disclosed technology generally relates semiconductor devices, and relates more particularly to a spin transfer torque device, a method of operating the spin-transfer torque device and a method of fabricating the spin-transfer torque device. According to one aspect, a spin-transfer torque device includes a magnetic flux guide layer and a set of magnetic tunnel junction (MTJ) pillars arranged above the magnetic flux guide layer. Each one of the pillars includes a separate free layer, a separate tunnel barrier layer and a separate reference layer. A coupling layer is arranged between the magnetic flux guide layer and the MTJ pillars, wherein a magnetization of the separate free layer of each of the each of the MTJ pillars is coupled, parallel or antiparallel, to a magnetization of the magnetic flux guide layer through the coupling layer.
    Type: Application
    Filed: November 30, 2018
    Publication date: June 20, 2019
    Inventors: Tsann Lin, Johan Swerts
  • Publication number: 20190067564
    Abstract: The disclosed technology generally relates to magnetic memory devices, and more particularly to spin transfer torque magnetic random access memory (STT-MRAM) devices having a magnetic tunnel junction (MTJ), and further relates to methods of fabricating the STT-MRAM devices. In an aspect, a magnetoresistive random access memory (MRAM) device has a magnetic tunnel junction (MTJ). The MTJ includes a magnetic reference layer comprising CoFeB, a magnetic free layer comprising CoFeB, and a barrier layer comprising MgO. The barrier layer is interposed between the magnetic reference layer and the magnetic free layer. The barrier layer has a thickness adapted to tunnel electrons between the magnetic reference layer and the magnetic free layer sufficient to cause a change in the magnetization direction of the variable magnetization under a bias. The MTJ further comprises a buffer layer comprising one or more of Co, Fe, CoFe and CoFeB, where the buffer layer is doped with one or both of C and N.
    Type: Application
    Filed: August 13, 2018
    Publication date: February 28, 2019
    Inventors: Johan Swerts, Kiroubanand Sankaran, Tsann Lin, Geoffrey Pourtois
  • Patent number: 10050192
    Abstract: The disclosed technology generally relates to magnetic memory devices, and more particularly to spin transfer torque magnetic random access memory (STT-MRAM) devices having a magnetic tunnel junction (MTJ), and further relates to methods of fabricating the STT-MRAM devices. In an aspect, a magnetoresistive random access memory (MRAM) device has a magnetic tunnel junction (MTJ). The MTJ includes a magnetic reference layer including CoFeB, a magnetic free layer comprising CoFeB, and a barrier layer including MgO. The barrier layer is interposed between the magnetic reference layer and the magnetic free layer. The barrier layer has a thickness adapted to tunnel electrons between the magnetic reference layer and the magnetic free layer sufficient to cause a change in the magnetization direction of the variable magnetization under a bias. The MTJ further comprises a buffer layer comprising one or more of Co, Fe, CoFe and CoFeB, where the buffer layer is doped with one or both of C and N.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: August 14, 2018
    Assignee: IMEC vzw
    Inventors: Johan Swerts, Kiroubanand Sankaran, Tsann Lin, Geoffrey Pourtois
  • Publication number: 20170170390
    Abstract: The disclosed technology generally relates to magnetic memory devices, and more particularly to spin transfer torque magnetic random access memory (STT-MRAM) devices having a magnetic tunnel junction (MTJ), and further relates to methods of fabricating the STT-MRAM devices. In an aspect, a magnetoresistive random access memory (MRAM) device has a magnetic tunnel junction (MTJ). The MTJ includes a magnetic reference layer comprising CoFeB, a magnetic free layer comprising CoFeB, and a barrier layer comprising MgO. The barrier layer is interposed between the magnetic reference layer and the magnetic free layer. The barrier layer has a thickness adapted to tunnel electrons between the magnetic reference layer and the magnetic free layer sufficient to cause a change in the magnetization direction of the variable magnetization under a bias. The MTJ further comprises a buffer layer comprising one or more of Co, Fe, CoFe and CoFeB, where the buffer layer is doped with one or both of C and N.
    Type: Application
    Filed: December 8, 2016
    Publication date: June 15, 2017
    Inventors: Johan Swerts, Kiroubanand Sankaran, Tsann Lin, Geoffrey Pourtois
  • Patent number: 8947835
    Abstract: The invention provides a tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure. The sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, and a third sense layer preferably formed of a ferromagnetic Ni—Fe film. The sense layer structure has a long diffusion path (defined as a total thickness of the first and second sense layers) and ex-situ interfaces for suppressing unwanted diffusions of Ni atoms. Alternatively, the sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, a third sense layer preferably formed of a ferromagnetic Co—Fe—B—Hf film, and a fourth sense layer preferably formed of a ferromagnetic Ni—Fe film.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: February 3, 2015
    Assignee: HGST Netherlands B.V.
    Inventor: Tsann Lin
  • Patent number: 8946707
    Abstract: The invention provides a tunneling magnetoresistance (TMR) read sensor with an integrated auxiliary shield comprising buffer, parallel-coupling, shielding and decoupling layers for high-resolution magnetic recording. The buffer layer, preferably formed of an amorphous ferromagnetic Co—X (where X is Hf, Y, Zr, etc.) film, creates microstructural discontinuity between a lower ferromagnetic shield and the TMR read sensor. The parallel-coupling layer, preferably formed of a polycrystalline nonmagnetic Ru film, causes parallel coupling between the buffer and shielding layers. The shielding layer, preferably formed of a polycrystalline ferromagnetic Ni—Fe film exactly identical to that used as the lower ferromagnetic shield, shields magnetic fluxes stemming from a recording medium into the lower edge of the TMR read sensor.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: February 3, 2015
    Assignee: HGST Netherlands B.V.
    Inventor: Tsann Lin
  • Patent number: 8836000
    Abstract: The invention provides a bottom-type perpendicular magnetic tunnel junction (pMTJ) element with thermally stable amorphous blocking layers for high-density nonvolatile data storage. The first blocking layer, preferably formed of an amorphous nonmagnetic film, blocks a polycrystalline diffusion barrier layer with a body-center-cubic (bcc) <110> texture in order for the keeper and lower reference layers of the bottom-type pMTJ element to freely grow with a face-centered-cubic (fcc) <111> texture, thereby developing strong perpendicular magnetic anisotropy (PMA). The second blocking layer, preferably formed of an amorphous ferromagnetic film, blocks the keeper and lower reference layers of the bottom-type pMTJ element in order for the upper reference, barrier and storage layers of the bottom-type pMTJ element to freely grow with a <001> texture, thereby exhibiting a strong tunneling magnetoresistance (TMR) effect.
    Type: Grant
    Filed: May 10, 2013
    Date of Patent: September 16, 2014
    Assignee: Avalanche Technology, Inc.
    Inventor: Tsann Lin
  • Publication number: 20140210024
    Abstract: The invention provides a tunneling magnetoresistance (TMR) read sensor with an integrated auxiliary shield comprising buffer, parallel-coupling, shielding and decoupling layers for high-resolution magnetic recording. The buffer layer, preferably formed of an amorphous ferromagnetic Co—X (where X is Hf, Y, Zr, etc.) film, creates microstructural discontinuity between a lower ferromagnetic shield and the TMR read sensor. The parallel-coupling layer, preferably formed of a polycrystalline nonmagnetic Ru film, causes parallel coupling between the buffer and shielding layers. The shielding layer, preferably formed of a polycrystalline ferromagnetic Ni—Fe film exactly identical to that used as the lower ferromagnetic shield, shields magnetic fluxes stemming from a recording medium into the lower edge of the TMR read sensor.
    Type: Application
    Filed: January 30, 2013
    Publication date: July 31, 2014
    Applicant: HGST NETHERLANDS B.V.
    Inventor: Tsann Lin
  • Patent number: 8675317
    Abstract: A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with dual seed and cap layers for high-resolution magnetic recording is provided by the invention. The dual seed layers comprise a lower seed layer preferably formed of a nonmagnetic Pt film and an upper seed layer preferably formed of a nonmagnetic Ru film. The lower seed layer separates the upper seed layer from a buffer layer preferably formed of a ferromagnetic Co—Hf film, in order to minimize moment losses at its lower interface and thus define a sharp lower bound of a read gap. In addition, the lower seed layer facilitates the CPP read sensor to exhibit high pinning properties, while the upper seed layer facilitates the CPP read sensor to exhibit robust thermal properties.
    Type: Grant
    Filed: December 22, 2010
    Date of Patent: March 18, 2014
    Assignee: HGST Netherlands B.V.
    Inventor: Tsann Lin
  • Publication number: 20140004383
    Abstract: A current-perpendicular-to-plane (CPP) read sensor with Co—Fe buffer layers is proposed to improve pinning and magnetoresistance properties. The read sensor comprises first and second Co—Fe buffer layers in the lower and upper portions of a keeper layer structure, respectively, third and fourth Co—Fe buffer layers in the lower and upper portion of a reference layer structure, respectively, and a fifth Co—Fe buffer layer in the lower portion of a sense layer structure. The first buffer layer is adjacent to a pinning layer and has a specific composition to improve unidirectional-anisotropy pinning properties. The second and third buffer layers are adjacent to an antiparallel-coupling layer and have specific compositions to improve bidirectional-anisotropy pinning properties. The fourth and fifth buffer layers are adjacent to a barrier or spacer layer and have specific compositions to improve magnetoresistance properties.
    Type: Application
    Filed: August 30, 2013
    Publication date: January 2, 2014
    Applicant: HGST Netherlands B.V.
    Inventor: Tsann Lin
  • Patent number: 8610584
    Abstract: A fall-down alarm system includes a contact detection unit, a non-contact detection unit and a fall-down evaluation unit connecting respectively to the contact detection unit and non-contact detection unit. The contact detection unit and non-contact detection unit respectively detect an abnormal detected shape of an object and abnormal life symptoms of the object, and then the fall-down evaluation unit determines a fall-down condition and sends a trigger signal to request assistance. Through the contact detection unit and non-contact detection unit respectively detecting the shape and life symptoms of the object, the erroneous fall-down judgment can be reduced.
    Type: Grant
    Filed: July 20, 2011
    Date of Patent: December 17, 2013
    Assignee: China Medical University
    Inventors: Jin-Chern Chiou, Tsann Lin, Shih-Che Lo, Jeng-Ren Duann, Sheng-Chuan Liang, Yung-Jiun Lin
  • Patent number: 8553370
    Abstract: The present invention generally relates to a TMR reader and a method for its manufacture. The TMR reader discussed herein adds a shield layer to the sensor structure. The shield layer is deposited over the capping layer so that the shield layer and the capping layer collectively protect the free magnetic layer within the sensor structure from damage during further processing. Additionally, the hard bias layer is shaped such that the entire hard bias layer underlies the hard bias capping layer so that a top lead layer is not present. By eliminating the top lead layer and including a shield layer within the sensor structure, the read gap is reduced while still protecting the free magnetic layer during later processing.
    Type: Grant
    Filed: November 24, 2010
    Date of Patent: October 8, 2013
    Assignee: HGST Netherlands B.V.
    Inventors: Liubo Hong, Honglin Zhu, Tsann Lin, Zheng Gao
  • Patent number: 8537504
    Abstract: A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic buffer, shielding and seed layers is proposed for high-resolution magnetic recording. The ferromagnetic buffer layer is preferably formed of an amorphous Co—X (where X is Hf, Y, Zr, etc.) film. It provides the CPP read sensor with microstructural discontinuity from a ferromagnetic lower shield, thus facilitating the CPP read sensor to grow freely with preferred crystalline textures, and with ferromagnetic continuity to the ferromagnetic lower shield, thus acting as a portion of the ferromagnetic lower shield. The ferromagnetic shielding layer is preferably formed of a polycrystalline Ni—Fe film. It exhibits magnetic properties exactly identical to those of the ferromagnetic lower shield, thus acting identically as the ferromagnetic lower shield, and a uniform columnar grain morphology, thus initiating a uniform large grain morphology in the CPP read sensor.
    Type: Grant
    Filed: September 16, 2010
    Date of Patent: September 17, 2013
    Assignee: HGST Netherlands B.V.
    Inventor: Tsann Lin
  • Publication number: 20130164562
    Abstract: The invention provides a tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure. The sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, and a third sense layer preferably formed of a ferromagnetic Ni—Fe film. The sense layer structure has a long diffusion path (defined as a total thickness of the first and second sense layers) and ex-situ interfaces for suppressing unwanted diffusions of Ni atoms. Alternatively, the sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, a third sense layer preferably formed of a ferromagnetic Co—Fe—B—Hf film, and a fourth sense layer preferably formed of a ferromagnetic Ni—Fe film.
    Type: Application
    Filed: December 22, 2011
    Publication date: June 27, 2013
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventor: Tsann Lin
  • Patent number: 8451566
    Abstract: A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic buffer and seed layers is proposed for high-resolution magnetic recording. The ferromagnetic buffer layer is preferably formed of an amorphous Co—X (where X is Hf, Y, Zr, etc.) film. It provides the CPP read sensor with microstructural discontinuity from a ferromagnetic lower shield, thus facilitating the CPP read sensor to grow freely with preferred crystalline textures, and with ferromagnetic continuity to the ferromagnetic lower shield, thus acting as a portion of the ferromagnetic lower shield.
    Type: Grant
    Filed: September 16, 2010
    Date of Patent: May 28, 2013
    Assignee: HGST Netherlands B.V.
    Inventor: Tsann Lin