Abstract: Among other things, one or semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. An etch sequence is performed to form a first etched region over a planar region of a semiconductor arrangement. The first etched region exposes a planar structure, such as an alignment mark used for alignment during semiconductor fabrication. The etch sequence forms a second etched region over a semiconductor fin region of the semiconductor arrangement. In an embodiment, the etch sequence forms a first trench, a first fin nub and a first pillar in the semiconductor fin region, where the first trench is formed in a semiconductor substrate of the semiconductor fin region. A multi-depth STI structure is formed over at least one of the first trench, the first fin nub, or the first pillar.

Abstract: The present disclosure provides efficient, economical, and improved processes for synthesizing lifitegrast and intermediates thereof. The currently discloses processes provide a direct synthetic route, avoiding protection or deprotection steps. The currently disclosed process also provides processes for synthesizing lifitegrast using a reduced number of synthetic steps.

Abstract: In an embodiment, a device includes: an integrated circuit die having a first side and a second side opposite the first side; a die stack on the first side of the integrated circuit die; a dummy semiconductor feature on the first side of the integrated circuit die, the dummy semiconductor feature laterally surrounding the die stack, the dummy semiconductor feature electrically isolated from the die stack and the integrated circuit die; a first adhesive disposed between the die stack and the dummy semiconductor feature; and a plurality of conductive connectors on the second side of the integrated circuit die.

Abstract: A semiconductor device includes a substrate and a floating gate memory cell. The floating gate memory cell includes an erase gate structure disposed on the substrate, a first floating gate structure, a second floating gate structure, a first word line, a common source, a second word line, a first spacer and a second spacer. The first floating gate structure and the second floating gate structure are recessed in the substrate at two opposite sides of the erase gate structure. The first word line and the second word line are respectively adjacent to the first floating gate structure and the second floating gate structure. The common source is disposed in the substrate under the erase gate structure. The first spacer and the second spacer are respectively disposed between the first floating gate structure and the first word line and between the second floating gate structure and the second word line.

Abstract: A three dimensional printing device includes a plane, a projector, a separation mechanism, and a driving mechanism. The plane is used to put a first photocured material and a second photocured material. The projector emits a light to cure the first photocured material and the second photocured material. The separation mechanism is disposed on the plane and used for separating the first photocured material and the second photocured material, and the driving mechanism drives the separation mechanism to change a location of the first photocured material on the plane.

Abstract: A camera module including a lens holder, a lens barrel, a first lens set, a second lens set, an image sensing component and a driver is provided. The lens barrel is disposed on the lens holder. The first lens set is disposed in the lens barrel. The second lens set is fixed in the lens holder. The first lens set and the second lens set include at least one lens respectively. The image sensing component is disposed in the lens holder. The driver is configured to drive the lens barrel to enable the first lens set to move along a direction parallel to an axis direction of the optical axis. The driver adjusts a position of the first lens set so as to form a gap between the first lens set and the second lens set and along the optical axis.

Abstract: The disclosure provides an audio processing device, an audio processing method for controlling a plurality of speakers, and a computer program product. The audio processing device includes a memory, a transceiver, and a processor. The memory stores a plurality of modules. The transceiver is wirelessly paired with a plurality of speakers. The processor executes the modules to perform following steps: requesting each of the speakers to output an audio positioning signal; collecting the audio positioning signal from each of the speakers; retrieving a location of each of the speakers relative to the audio processing device according to the audio positioning signal from each of the speakers; adjusting a plurality of audio contents based on the location of each of the speakers relative to the audio processing device; and sending the audio contents to the speakers to control the speakers outputting the audio contents.

Abstract: A grinding tool includes a substrate and a plurality of abrasive particles. The substrate has a first and a second surface and a plurality of holes, each of the holes extending through the substrate and respectively having a first and a second opening on the first and second surface, the second opening being larger than the first opening. The abrasive particles are respectively disposed in the holes and attached to the substrate via a plurality of adhesive portions, each of the abrasive particles having a tip protruding outward from the first surface and a remaining part covered with one of the adhesive portions inside the corresponding hole, wherein the first openings of the holes are smaller than the abrasive particles, and the abrasive particles are respectively retained in the holes. Moreover, embodiments described herein include a method of fabricating a grinding tool.

Abstract: A semiconductor structure includes a die including a surface, a lid disposed over the surface of the die, and a thermally conductive material disposed between the die and the lid, wherein the lid includes a protrusion protruded towards the surface of the die and the thermally conductive material surrounds the protrusion. Also, a method of manufacturing a semiconductor structure includes providing a die including a surface, providing a lid, removing a portion of the lid to form a protrusion, disposing a thermally conductive material between the surface of the die and the lid, wherein the protrusion of the lid is surrounded by the thermally conductive material. Further, an apparatus for manufacturing a semiconductor structure and a method of manufacturing a semiconductor structure by the apparatus are disclosed.

Abstract: A fan control method for a computer system is provided. The computer system includes a fan and a target device. The fan control system includes a controller to control the rotation speed of the fan. The controller controls the rotation speed according to a time-variable rate of current consumed by the target device. Particularly, when the time-variable rate of current exceeds a threshold, the controller controls the fan to operate at a maximum rotation speed.

Abstract: A fan control system includes a fan and a target device. The fan control system includes a controller to control the rotation speed of the fan. The controller controls the rotation speed according to a time-variable rate of current consumed by the target device. Particularly, when the time-variable rate of current exceeds a threshold, the controller controls the fan to operate at a maximum rotation speed.

Abstract: A water filter system comprising a container configured to contain water, a lid configured to attach to the container, a filter element configured to filter the water and movable within the container, and a plunger coupled to the filter element and movable through the lid. The water filter system is at least one of powered by a mechanical force directly from a user or self-powered and is not electrically powered.

Abstract: A semiconductor device includes a FinFET component, a plurality of patterned dummy semiconductor fins arranged aside a plurality of fins of the FinFET component, an isolation structure formed on the patterned dummy semiconductor fins, and a tuning component formed on the patterned dummy semiconductor fins and electrically connected to the FinFET component. A height of the patterned dummy semiconductor fins is shorter than that of the fins of the FinFET component.

Abstract: The present invention provides processes for the preparation of ataluren. Intermediates for preparing ataluren are also provided.

Abstract: A semiconductor device is provided. The semiconductor device includes a doped isolation structure formed above a substrate, and the doped isolation structure includes a first doped portion and a second doped portion, and a doped concentration of the second doped portion is different from a doped concentration of the first doped portion. The semiconductor device also includes a first fin partially embedded in the doped isolation structure, and a sidewall surface of the first fin is in direct contact with the first doped portion. The semiconductor device includes a second fin partially embedded in the doped isolation structure, and the doped isolation structure is between the first fin and the second fin, and a sidewall surface of the second fin is in direct contact with the second doped portion.

Abstract: A method for manufacturing embedded memory using high-?-metal-gate (HKMG) technology is provided. A gate stack is formed on a semiconductor substrate. The gate stack comprises a charge storage film and a control gate overlying the charge storage film. The control gate includes a first material. A gate layer is formed of the first material, and is formed covering the semiconductor substrate and the gate stack. The gate layer is recessed to below a top surface of the gate stack, and subsequently patterned to form a select gate bordering the control gate and to form a logic gate spaced from the select and control gates. An ILD layer is formed between the control, select, and logic gates, and with a top surface that is even with top surfaces of the control, select, and logic gates. The control, select, or logic gate is replaced with a new gate of a second material.

Abstract: A disc brake caliper of a bicycle includes a main body, a first bolt, an intermediate member, a second bolt, and a tubing connector. The main body has an oil passage and a first tapped hole communicating with the oil passage. The first bolt is screwed into the first tapped hole, with a first exposed section exposed out of the main body. The intermediate member fits around the first exposed section through a first perforation, and has a second tapped hole, which extends in a direction different from that of the first perforation. The intermediate member can be rotated relative to the first exposed section. The second bolt is screwed in the second tapped hole, with a second exposed section exposed out of the intermediate member. The tubing connector fits around the second exposed section through a second perforation, and can be rotated relative to the second exposed section.

Abstract: A fan control system includes a fan and a target device. The fan control system includes a controller to control the rotation speed of the fan. The controller controls the rotation speed according to a time-variable rate of current consumed by the target device. Particularly, when the time-variable rate of current exceeds a threshold, the controller controls the fan to operate at a maximum rotation speed.

Abstract: A process for making ixazomib citrate of formula VI comprising reacting a compound of formula V with citric acid to form ixazomib citrate of formula VI: wherein R is hydrogen or an amide protecting group.