Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Abstract: Suppressing a dead period at the time of mode switching. A solid-state imaging device includes: a plurality of pixels (300) that each outputs a luminance change of incident light; and a detection circuit (305) that outputs an event signal based on the luminance change output from each of the pixels, in which each of the pixels includes: a photoelectric conversion element (311) that generates a charge according to an incident light amount; a logarithmic conversion circuit (312, 313) that is connected to the photoelectric conversion element and converts a photocurrent flowing out of the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; and a first transistor (318) having a drain connected to a sense node of the logarithmic conversion circuit.

Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Abstract: Solid-state imaging devices are disclosed. In one example, a solid-state imaging device includes detection pixels that each output a luminance change of incident light, a detection circuit that outputs an event signal based on the luminance change, and a first common line connecting the detection pixels to each other. Each of the detection pixels may include a photoelectric conversion element, a logarithmic conversion circuit that outputs a voltage signal corresponding to a logarithmic value of photocurrent from the photoelectric conversion element, a first circuit that outputs a luminance change of incident light based on the voltage signal, a first transistor connected between the photoelectric conversion element and the logarithmic conversion circuit, and a second transistor connected between the photoelectric conversion element and the first common line. The detection circuit includes a second circuit that outputs the event signal based on the luminance change output from each of the detection pixels.

Abstract: The present technology relates to a light-receiving element and a distance measurement module. A light-receiving element includes: a first voltage application unit to which a voltage is applied; a first charge detection unit that is disposed at a periphery of the first voltage application unit; a second voltage application unit to which a voltage is applied; a second charge detection unit that is disposed at a periphery of the second voltage application unit; a third voltage application unit to which a first voltage is applied; and a voltage control unit that applies a second voltage to one of the first voltage application unit and the second a voltage application unit and causes the other to be in a floating state, the second voltage being different from the first voltage. The present technology is applicable to a light-receiving element.

Abstract: The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Abstract: A sensor device according to the present technology includes a first chip including a first semiconductor substrate and a first wire formation layer and including a pixel that includes a photoelectric conversion element, and a first transfer gate element and a second transfer gate element configured to transfer accumulated charges of the photoelectric conversion element, and a second chip including a second semiconductor substrate and a second wire formation layer, in which a first wire electrically connected to the first transfer gate element, a second wire electrically connected to the second transfer gate element, and a third wire electrically connected to a ground are formed, and each of the first wire, the second wire, and the third wire is formed by bonding a first portion formed in the first wire formation layer and extending in a first direction and a second portion formed in the second wire formation layer and extending in the first direction.

Abstract: A light receiving element according to the present disclosure includes a sensor substrate (102) and a circuit board (101). The sensor substrate (102) is provided with a light receiving region (103), a pair of voltage application electrodes, and an incident surface electrode (104). The light receiving region (103) photoelectrically converts incident light into signal charges. A voltage is alternately applied to the pair of voltage application electrodes to generate, in the light receiving region (103), an electric field that time-divides the signal charges and distributes the signal charges to a pair of charge accumulation electrodes. The incident surface electrode (104) is provided on an incident surface of light in the light receiving region (103), and a voltage equal to or lower than a ground potential is applied to the incident surface electrode. The circuit board (101) is provided on a surface facing the incident surface of the light, of the sensor substrate (102).

Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Abstract: The present technology relates to a light reception device and a distance measurement module. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap to which a first voltage is applied and a first charge detection portion, and a second tap to which a second voltage different from the first voltage is applied and a second charge detection portion. The position of the on-chip lens differs depending upon an in-plane position of a pixel array section, so that an optical path length or a DC contrast of a chief ray from an object is uniform at in-plane pixels of the pixel array section. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

Abstract: The present technology relates to a radiation detection apparatus that makes it possible to obtain a projection image of a radiation in a short period of time. The radiation detection apparatus includes a scintillator that emits scintillation light in response to incidence of a radiation, a pixel substrate on which a plurality of pixels each of which photoelectrically converts the scintillation light and outputs a pixel signal according to a light amount of the scintillation light is disposed in an array, a detection circuit substrate that includes an A/D (Analog to Digital) conversion unit for A/D converting the pixel signal and is stacked on the pixel substrate, and a compression unit that compresses digital data outputted from the A/D conversion unit. The present technology can be applied, for example, to an X-ray imaging apparatus that detects an X-ray to perform imaging and so forth.

Abstract: The present technology relates to a light reception device and a distance measurement module. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap to which a first voltage is applied and a first charge detection portion, and a second tap to which a second voltage different from the first voltage is applied and a second charge detection portion. The position of the on-chip lens differs depending upon an in-plane position of a pixel array section, so that an optical path length or a DC contrast of a chief ray from an object is uniform at in-plane pixels of the pixel array section. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

Abstract: The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, a first substrate arranged between the on-chip lens and the wiring layer, and a second substrate bonded to the first substrate via the wiring layer, the first substrate includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the second substrate includes a plurality of pixel transistors that performs an operation of reading charges detected in the first and second charge detection portions.

Abstract: The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the wiring layer includes at least one ground line having a wider line width than a power supply line. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.

Abstract: A light-receiving element includes an on-chip lens; an interconnection layer; and a semiconductor layer that is disposed between the on-chip lens and the interconnection layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage different from the first voltage is applied, a first charge detection unit that is disposed at the periphery of the first voltage application unit, a second charge detection unit that is disposed at the periphery of the second voltage application unit, and a charge discharge region that is provided on an outer side of an effective pixel region. For example, the present technology is applicable to a light-receiving element that generates distance information in a ToF method, or the like.

Abstract: The present technology relates to a light-receiving element and a distance measurement module which are capable of improving characteristics. A light-receiving element includes: a first voltage application unit to which a voltage is applied; a first charge detection unit that is disposed at a periphery of the first voltage application unit; a second voltage application unit to which a voltage is applied; a second charge detection unit that is disposed at a periphery of the second voltage application unit; a third voltage application unit to which a first voltage is applied; and a voltage control unit that applies a second voltage to one of the first voltage application unit and the second a voltage application unit and causes the other to be in a floating state, the second voltage being different from the first voltage. The present technology is applicable to a light-receiving element.

Abstract: The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.