Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Abstract: The present disclosure relates to a detection device and electronic equipment, in which a detection accuracy of minute light can be improved. A detection device includes: a pixel array portion in which a plurality of first pixels including a photoelectric conversion unit, and a plurality of second pixels not including a photoelectric conversion unit, are arranged; and a driving unit configured to drive the first pixel and the second pixel. The present technology, for example, can be applied to a light detector, a radiation counter device performing radiation counting by using the light detector, and a biological examination device using the light detector, such as a flow cytometer.

Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Abstract: The present technology relates to a radiation detection apparatus that makes it possible to obtain a projection image of a radiation in a short period of time. The radiation detection apparatus includes a scintillator that emits scintillation light in response to incidence of a radiation, a pixel substrate on which a plurality of pixels each of which photoelectrically converts the scintillation light and outputs a pixel signal according to a light amount of the scintillation light is disposed in an array, a detection circuit substrate that includes an A/D (Analog to Digital) conversion unit for A/D converting the pixel signal and is stacked on the pixel substrate, and a compression unit that compresses digital data outputted from the A/D conversion unit. The present technology can be applied, for example, to an X-ray imaging apparatus that detects an X-ray to perform imaging and so forth.

Abstract: The X-ray detection device according to an aspect of the present disclosure includes a scintillator that generates scintillation light in response to incident X-rays; a detection unit including a plurality of pixels each generating a pixel signal in response to the scintillation light incident thereon; and an output unit that generates X-ray two-dimensional projection data by using the pixel signals of the pixels. A pixel of the detection unit includes a plurality of subpixels that performs photoelectric conversion in response to the scintillation light; an AD conversion unit that applies AD conversion to outputs of the subpixels; and an adder that generates the pixel signal corresponding to the pixel by adding up outputs of the plurality of subpixels after the AD conversion. The present disclosure is applicable to an X-ray CT device and an X-ray FPD device.

Abstract: A light-receiving element includes an on-chip lens; an interconnection layer; and a semiconductor layer that is disposed between the on-chip lens and the interconnection layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage different from the first voltage is applied, a first charge detection unit that is disposed at the periphery of the first voltage application unit, a second charge detection unit that is disposed at the periphery of the second voltage application unit, and a charge discharge region that is provided on an outer side of an effective pixel region. For example, the present technology is applicable to a light-receiving element that generates distance information in a ToF method, or the like.

Abstract: There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.

Abstract: An imaging apparatus with logarithmic characteristics includes: a photodiode that receives light; a well tap unit that fixes the potential of an N-type region of the photodiode; and a resetting unit that resets the photodiode, a P-type region of the photodiode outputting a voltage signal equivalent to a photocurrent subjected to logarithmic compression. The first potential to be supplied to the well tap unit is made lower than the second potential to be supplied to the resetting unit, so that the capacitance formed with the PN junction of the photodiode is charged when the resetting unit performs a reset operation. The present technology can be applied to unit pixels having logarithmic characteristics.

Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Abstract: The present disclosure relates to a detection device and electronic equipment, in which a detection accuracy of minute light can be improved. A detection device includes: a pixel array portion in which a plurality of first pixels including a photoelectric conversion unit, and a plurality of second pixels not including a photoelectric conversion unit, are arranged; and a driving unit configured to drive the first pixel and the second pixel. The present technology, for example, can be applied to a light detector, a radiation counter device performing radiation counting by using the light detector, and a biological examination device using the light detector, such as a flow cytometer.

Abstract: The present disclosure relates to an X-ray detection device and a detection method, which can improve a sampling rate and spatial resolution without increasing an exposure dose to a subject. The X-ray detection device according to an aspect of the present disclosure includes: a scintillator adapted to generate scintillation light in response to incident X-rays; a detection unit including a plurality of pixels each generating a pixel signal in response to the scintillation light incident thereon; and an output unit adapted to generate the X-ray two-dimensional projection data by using the pixel signals of the pixels, in which the pixel of the detection unit includes: a plurality of subpixels adapted to perform photoelectric conversion in response to the scintillation light; an AD conversion unit adapted to apply AD conversion to outputs of the subpixels; and an adder adapted to generate the pixel signal corresponding to the pixel by adding up outputs of the plurality of subpixels after the AD conversion.

Abstract: There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.

Abstract: There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.

Abstract: An imaging apparatus with logarithmic characteristics includes: a photodiode that receives light; a well tap unit that fixes the potential of an N-type region of the photodiode; and a resetting unit that resets the photodiode, a P-type region of the photodiode outputting a voltage signal equivalent to a photocurrent subjected to logarithmic compression. The first potential to be supplied to the well tap unit is made lower than the second potential to be supplied to the resetting unit, so that the capacitance formed with the PN junction of the photodiode is charged when the resetting unit performs a reset operation. The present technology can be applied to unit pixels having logarithmic characteristics.

Abstract: An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

Abstract: An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

Abstract: There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.

Abstract: An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

Abstract: An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

Abstract: An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.