Abstract: A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.

Abstract: The object of the present invention is to provide an optical recording medium in which a recording material of the optical recording medium has a high solubility in an organic solvent, so that the recording material can be shaped to film by a coating process and the recording material is excellent in light-resistance and stability during the preservation, so that the optical recording medium is applicable to the recordable DVD. For the object, the present invention provides the optical recording medium comprising a substrate and at least a recording medium disposed on the substrate, wherein the recording medium comprises at least one type of formazan-metal chelate dyes.

Abstract: A semiconductor device comprises a support layer made of semiconductor, a diffusion layer formed by implanting impurities in a surface layer of the support layer, a buried insulating layer provided on the diffusion layer, an island-like active layer provided on the buried insulating layer, a channel region formed in the active layer, source and drain regions formed in the active layer, sandwiching the channel region, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film and on side surfaces of the island-like active layer, and insulated and isolated from the channel, source, and drain regions, and an electrode connected to the active layer.

Abstract: A semiconductor device comprises a support layer made of semiconductor, a diffusion layer formed by implanting impurities in a surface layer of the support layer, a buried insulating layer provided on the diffusion layer, an island-like active layer provided on the buried insulating layer, a channel region formed in the active layer, source and drain regions formed in the active layer, sandwiching the channel region, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film and on side surfaces of the island-like active layer, and insulated and isolated from the channel, source, and drain regions, and an electrode connected to the active layer.

Abstract: The present invention provides a technique that is capable of preventing a separation of elements of the display panel of a slim display device in which the bending radius of a flexible printed circuit is small. A flexible printed circuit connects to a first side of the display panel and is bent in the vicinity of the first side, part of which is disposed between the back of a backlight and a holder. The holder has an opening or a depression in the vicinity of the first side of the backlight corresponding to the first side of the display panel. The flexible printed circuit has a portion which is deflected so that the top thereof projects into a space in the opening or the depression in the holder, as viewed in section perpendicular to the first side.

Abstract: There is provided a developer agent for a positive type photosensitive compound having a near infrared wave length region laser sensitive characteristic in which a photosensitive portion of the compound exposed and reacted with a laser of the near infrared wavelength region is enabled to be dissolved in the developer liquid. This developer agent contains a) water; b) either one of or two kinds or more of tetramethyl ammonium hydroxide, benzyl triethyl ammonium hydroxide, ortho silicate soda, etc., applied as either organic or non-organic alkali capable of becoming a major material; and c) potassium pyrophosphate, tripolyphosphate soda, etc., applied as liquid agent having dampening action for preventing a reduction in pH value.

Abstract: An optical recording medium includes a substrate and at least a recording layer deposited on or above the substrate, and the recording layer contains at least one formazan-metal chelate compound containing a formazan compound and a metal component; at least one squarylium-metal chelate compound containing a squarylium compound and a metal component; and at least one diarylamine compound.

Abstract: A recording method of recording information in a dye-based write-once digital versatile disc (DVD) containing a substrate having a wobbled guide groove and a recording layer containing an organic dye. Recording is performed by irradiating the DVD with three kinds of single light pulses. Each single pulse contains a recording area to record a mark and a cooling area having a light quantity not greater than 0.1 mW for a predetermined time. When the mark having a shortest length is formed, the DVD is irradiated with a first single light pulse. When the mark having a second shortest length is formed, the DVD is irradiated with a second single light pulse. When the mark having a third shortest length or longer is formed, the DVD is irradiated with a third single light pulse.

Abstract: A semiconductor device according to an aspect of the present invention comprises a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer is formed in a first region of a semiconductor substrate with one of an insulating film and a cavity interposed between the semiconductor substrate and the first semiconductor layer. The plurality of second semiconductor layers is formed in second regions of the semiconductor substrate.

Abstract: There is provided a photogravure plate making method capable of performing a quite superior photogravure plate making operation while it has a requisite and sufficient developing latitude under non-heating condition after forming a coating film and while applying a positive O-type thermal resist.

Abstract: A semiconductor device includes first and second semiconductor layers and first and second MOS transistors. The first semiconductor layer is provided on and electrically connected to the semiconductor substrate. The second semiconductor layer is provided near the first semiconductor layer and formed above the semiconductor substrate via one of an insulating film and a cavity. The first and second MOS transistors are respectively provided on the first and second semiconductor layers, and each has a gate electrode arranged parallel to a boundary between the first and second semiconductor layers.

Abstract: To provide a cavity in the portion of the silicon substrate which lies beneath the channel region of the MOS transistor.

Abstract: There is provided a photogravure plate making method capable of performing a quite superior photogravure plate making operation while it has a requisite and sufficient developing latitude under non-heating condition after forming a coating film and while applying a positive 0-type thermal resist.

Abstract: There is provided an alkaline soluble positive-type photosensitive composition having an infrared wavelength range laser sensitive characteristic. There is also provided a positive-type photosensitive composition not requiring any burning operation, capable of attaining a requisite and sufficient close fitness in coating operation under a condition of indoor working room humidity of 25 to 60%, capable of attaining a development not producing any residuals while keeping a high sensitivity, cutting it with a sharp contour, attaining a quite hard resist film and improving an anti-scar characteristic in a handling before developing operation. This composition includes an alkaline soluble organic high molecular substance having a phenolic hydroxyl group; photo-thermal conversion substance for absorbing infrared rays of an image exposure light source; and a close-fitness modifying agent such as polyvinylpolypirrolidone/polyvinylacetatecopolymer and the like.

Abstract: A semiconductor chip comprises a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate and a silicon layer on the buried insulator, and a boundary layer located at the boundary between the bulk device region and the SOI device region. The bulk device region has a first device-fabrication surface in which a bulk device is positioned on the bulk growth layer. The SOI device region has a second device-fabrication surface in which an SOI device is positioned on the silicon layer. The first and second device-fabrication surfaces are positioned at a substantially uniform level.

Abstract: An optical recording medium includes a substrate and at least a recording layer deposited on or above the substrate, and the recording layer contains at least one formazan-metal chelate compound containing a formazan compound and a metal component; at least one squarylium-metal chelate compound containing a squarylium compound and a metal component; and at least one diarylamine compound.

Abstract: A semiconductor chip comprises a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate and a silicon layer on the buried insulator, and a boundary layer located at the boundary between the bulk device region and the SOI device region. The bulk device region has a first device-fabrication surface in which a bulk device is positioned on the bulk growth layer. The SOI device region has a second device-fabrication surface in which an SOI device is positioned on the silicon layer. The first and second device-fabrication surfaces are positioned at a substantially uniform level.

Abstract: A semiconductor device comprises a semiconductor substrate, a MOSFET including a double gate structure provided on the semiconductor substrate, and an isolation region for isolating the MOSFET from other elements comprising a trench provided on the surface of the semiconductor substrate and an insulator provided in the trench, a part of the isolation region in the trench around the MOSFET having a bottom deeper than other part of the isolation region.

Abstract: A semiconductor chip comprises a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate and a silicon layer on the buried insulator, and a boundary layer located at the boundary between the bulk device region and the SOI device region. The bulk device region has a first device-fabrication surface in which a bulk device is positioned on the bulk growth layer. The SOI device region has a second device-fabrication surface in which an SOI device is positioned on the silicon layer. The first and second device-fabrication surfaces are positioned at a substantially uniform level.

Abstract: A support-side substrate having a thermal oxide film on the major surface is bonded to an active-layer-side substrate having a thermal oxide film on the major surface while making the major surfaces oppose each other. The active-layer-side substrate and part of the oxide film are selectively etched from a surface opposite to the major surface of the active-layer-side substrate to a halfway depth of the buried oxide film formed from the thermal oxide films at the bonding portion. A sidewall insulating film is formed on the etching side surface portion of the active-layer-side substrate. Then, the remaining buried oxide film except that immediately under the active-layer-side substrate is selectively etched. A single-crystal semiconductor layer is formed on the support-side substrate exposed by removing the buried oxide film.