Patents by Inventor Tsutomu Sato

Tsutomu Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with a cavity therein and a method of manufacturing the same
    Publication number: 20040129998
    Abstract: A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.
    Type: Application
    Filed: September 19, 2003
    Publication date: July 8, 2004
    Inventors: Kazumi Inoh, Hidemi Ishiuchi, Satoshi Matsuda, Ichiro Mizushima, Tsutomu Sato
  • Semiconductor device having a hollow region and method of manufacturing the same
    Publication number: 20040124439
    Abstract: A hollow region is formed in a silicon substrate. A plurality of openings formed in the silicon layer on the hollow region is filled with a buried film. The bottom portion of the hollow region is formed with a plurality of silicon pillars, which support the silicon layer.
    Type: Application
    Filed: September 4, 2003
    Publication date: July 1, 2004
    Inventors: Yoshihiro Minami, Takashi Yamada, Yusuke Kohyama, Tsutomu Sato, Hajime Nagano
  • Optical recording medium, optical recording method and optical recording device
    Patent number: 6737143
    Abstract: An optical recording medium having a substrate and at least a recording layer disposed on the substrate, the recording layer comprising at least one squarylium metal chelate compound which comprises a squarylium compound and a metal; and at least one azo metal chelate compound which comprises another metal and an azo compound expressed by the following formula (A-I): where A and B each independently expresses a residue forming one of a) a heterocyclic ring which may comprise a substituent and b) aromatic ring which may comprise a substituent, by combination with corresponding carbon atoms respectively bonded to A or B, and X expresses an active-hydrogen-containing substituent group. An optical recording method, and optical recording device using the same optical recording medium.
    Type: Grant
    Filed: June 11, 2002
    Date of Patent: May 18, 2004
    Assignee: Ricoh Company Ltd.
    Inventors: Soh Noguchi, Tsutomu Sato, Tatsuya Tomura, Yasunobu Ueno, Ikuo Shimizu, Motoharu Kinugasa, Hiroshi Toyoda, Shiho Yamada
  • Ethylamine derivatives
    Patent number: 6720433
    Abstract: Ethylamine derivatives that function as a motilin receptor antagonist and are useful as medicines are represented by the general formula (1): wherein R1 represents a phenyl group or the like, R2 represents a hydrogen atom and the like, R3 represents a hydrogen atom and the like, R4 represents a hydrogen atom and the like, R5 represents an alkyl group and the like, R7 represents a hydrogen atom and the like and R8 represents a heterocyclic ring and the like; or a hydrate or pharmaceutically acceptable salt thereof.
    Type: Grant
    Filed: February 3, 2003
    Date of Patent: April 13, 2004
    Assignee: Chugai Seiyaku Kabushiki Kaisha
    Inventors: Hiroharu Matsuoka, Tsutomu Sato
  • Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer
    Publication number: 20040026739
    Abstract: A semiconductor device according to an aspect of the present invention comprises a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer is formed in a first region of a semiconductor substrate with one of an insulating film and a cavity interposed between the semiconductor substrate and the first semiconductor layer. The plurality of second semiconductor layers is formed in second regions of the semiconductor substrate.
    Type: Application
    Filed: August 11, 2003
    Publication date: February 12, 2004
    Inventors: Tsutomu Sato, Hajime Nagano, Ichiro Mizushima, Takashi Yamada, Yuso Udo, Shinichi Nitta
  • Data-processing apparatus with wire harness and ferrite core
    Patent number: 6679732
    Abstract: A notebook PC has a main unit and a display unit. The main unit incorporates a power-supply circuit and a display control circuit. The display unit comprises an LCD panel and a backlight. The main unit and display unit are electrically connected by an LCD harness. The LCD harness extends through a hinge mechanism that couples the display unit to the main unit, allowing the display unit to rotate. The LCD harness comprises lines including power lines and signal lines. The power lines supply power from the power-supply circuit to the LCD panel and the backlight. The signal lines supply data from the display control circuit to the LCD panel. A ferrite core wraps only the signal lines.
    Type: Grant
    Filed: February 12, 2002
    Date of Patent: January 20, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masashi Mikami, Tsutomu Sato, Toshikatsu Nakamura
  • Semiconductor device and manufacturing method thereof
    Publication number: 20030209761
    Abstract: A semiconductor device comprises a support layer made of semiconductor, a diffusion layer formed by implanting impurities in a surface layer of the support layer, a buried insulating layer provided on the diffusion layer, an island-like active layer provided on the buried insulating layer, a channel region formed in the active layer, source and drain regions formed in the active layer, sandwiching the channel region, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film and on side surfaces of the island-like active layer, and insulated and isolated from the channel, source, and drain regions, and an electrode connected to the active layer.
    Type: Application
    Filed: May 13, 2003
    Publication date: November 13, 2003
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Atsushi Yagishita, Ichiro Mizushima, Tsutomu Sato
  • Semiconductor device having one of patterned SOI and SON structure
    Publication number: 20030201512
    Abstract: A semiconductor device includes first and second semiconductor layers and first and second MOS transistors. The first semiconductor layer is provided on and electrically connected to the semiconductor substrate. The second semiconductor layer is provided near the first semiconductor layer and formed above the semiconductor substrate via one of an insulating film and a cavity. The first and second MOS transistors are respectively provided on the first and second semiconductor layers, and each has a gate electrode arranged parallel to a boundary between the first and second semiconductor layers.
    Type: Application
    Filed: May 23, 2003
    Publication date: October 30, 2003
    Inventors: Takashi Yamada, Tsutomu Sato, Shinichi Nitta, Hajime Nagano, Ichiro Mizushima, Hisato Oyamatsu, Yoshihiro Minami, Shinji Miyano, Osamu Fujii
  • Cyclic peptide derivative
    Publication number: 20030191053
    Abstract: The present invention aims to provide cyclic peptide derivatives having motilin receptor antagonist activity or the like and useful as pharmaceuticals.
    Type: Application
    Filed: February 24, 2003
    Publication date: October 9, 2003
    Inventors: Hiroharu Matsuoka, Tsutomu Sato
  • Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer
    Patent number: 6630714
    Abstract: A semiconductor device according to an aspect of the present invention comprises a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer is formed in a first region of a semiconductor substrate with one of an insulating film and a cavity interposed between the semiconductor substrate and the first semiconductor layer. The plurality of second semiconductor layers is formed in second regions of the semiconductor substrate.
    Type: Grant
    Filed: March 7, 2002
    Date of Patent: October 7, 2003
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu Sato, Hajime Nagano, Ichiro Mizushima, Takashi Yamada, Yuso Udo, Shinichi Nitta
  • Ethylamine derivatives
    Publication number: 20030176643
    Abstract: Ethylamine derivatives that function as a motilin receptor antagonist and are useful as medicines are represented by the general formula (1): 1
    Type: Application
    Filed: February 3, 2003
    Publication date: September 18, 2003
    Applicant: CHUGAI SEIYAKU KABUSHIKI KAISHA
    Inventors: Hiroharu Matsuoka, Tsutomu Sato
  • Semiconductor device and method of manufacturing the same
    Publication number: 20030173617
    Abstract: To provide a cavity in the portion of the silicon substrate which lies beneath the channel region of the MOS transistor.
    Type: Application
    Filed: March 18, 2003
    Publication date: September 18, 2003
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tsutomu Sato, Ichiro Mizushima, Yoshitaka Tsunashima, Toshihiko Iinuma, Kiyotaka Miyano
  • N-(phenylsulfonyl)picolinamide derivatives, process for producing the same, and herbicide
    Patent number: 6610853
    Abstract: A herbicide containing as the active ingredient an N-(henylsulfonyl)picolinamide derivative represented by general formula (I) wherein X reprcsents a halogeno, a C1-4 alkyl, a C1-4 haloalkyl, a C1-4 alkoxy, a C1-4 haloalkoxy, a (C1-4 alkoxy)carbonyl, a [di(C1-4 alkyl)amino]sulfonyl, an [N—(C1-4 alkyl)-N—(C1-4 alkoxy)amino]sulfonyl, a (C1-4 alkylamino)sulfonyl, a C1-4 alkylthio, a C1-4 alkylsulfinyl, a C1-4 alkylsulfonyl, or nitro; n is an integer of 0 to 5; Y represets a halogeno, a C1-4 alkyl, a C1-4 haloalkyl, a C1-4 alkoxy, C1-4 haloalkoxy, a C1-4 alkylthio, a C1-4 haloalkylthio, amino, a C1-4 alkylamino, a di(C1-4 alkyl)amino, a (C1-4 alkoxy) C1-4 alkyl, a (C1-4 alkylthio) C1-4 alkyl, or nitro; and m is an integer of 0 to 4.
    Type: Grant
    Filed: August 8, 2000
    Date of Patent: August 26, 2003
    Assignee: Kureha Kagaku Kogyo K.K.
    Inventors: Yoichi Kanda, Koki Sato, Tsutomu Sato
  • Optical recording medium, optical recording method and optical recording device
    Publication number: 20030157291
    Abstract: An optical recording medium having a substrate and at least a recording layer disposed on the substrate, the recording layer comprising at least one squarylium metal chelate compound which comprises a squarylium compound and a metal; and at least one azo metal chelate compound which comprises another metal and an azo compound expressed by the following formula (A-I): 1
    Type: Application
    Filed: June 11, 2002
    Publication date: August 21, 2003
    Applicant: Ricoh Company, Ltd.
    Inventors: Soh Noguchi, Tsutomu Sato, Tatsuya Tomura, Yasunobu Ueno, Ikuo Shimizu, Motoharu Kinugasa, Hiroshi Toyoda, Shiho Yamada
  • Semiconductor device having one of patterned SOI and SON structure
    Publication number: 20030151112
    Abstract: A semiconductor device includes first and second semiconductor layers and first and second MOS transistors. The first semiconductor layer is provided on and electrically connected to the semiconductor substrate. The second semiconductor layer is provided near the first semiconductor layer and formed above the semiconductor substrate via one of an insulating film and a cavity. The first and second MOS transistors are respectively provided on the first and second semiconductor layers, and each has a gate electrode arranged parallel to a boundary between the first and second semiconductor layers.
    Type: Application
    Filed: March 14, 2002
    Publication date: August 14, 2003
    Inventors: Takashi Yamada, Tsutomu Sato, Shinichi Nitta, Hajime Nagano, Ichiro Mizushima, Hisato Oyamatsu, Yoshihiro Minami, Shinji Miyano, Osamu Fujii
  • Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and manufacturing method thereof
    Publication number: 20030146488
    Abstract: A semiconductor device includes a first semiconductor region having a buried oxide layer formed therein, a second semiconductor region in which the buried oxide layer does not exist, a trench formed to such a depth as to reach at least the buried oxide layer in a boundary portion between the first and second semiconductor regions, and an isolation insulating layer buried in the trench.
    Type: Application
    Filed: February 10, 2003
    Publication date: August 7, 2003
    Inventors: Hajime Nagano, Takashi Yamada, Tsutomu Sato, Ichiro Mizushima, Osamu Fujii
  • Semiconductor device and semiconductor device manufacturing method
    Patent number: 6600189
    Abstract: A semiconductor device includes a semiconductor substrate having a trench on a surface thereof and an embedding member embedding the interior of the trench therewith. While the section of the trench when cut by a first plane perpendicular to the direction of the depth of the trench is defined as a first section and the section of the trench when cut by a second plane perpendicular to the direction of the depth of the trench and closer to the bottom of the trench than the first plane is defined as a second section, the area of the first section is smaller than that of the second section and a minimum radius of curvature of the first section is smaller than a minimum radius of curvature of the second section. As a result, it is possible to lessen the concentration of the electric field into the bottom of the trench.
    Type: Grant
    Filed: June 21, 2000
    Date of Patent: July 29, 2003
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu Sato, Ichiro Mizushima, Yoshitaka Tsunashima, Junichiro Iba
  • Ethylamine derivatives
    Patent number: 6586630
    Abstract: The object of the present invention is to provide ethylamine derivatives that function as a motilin receptor antagonist and that are useful as medicines. The invention provides compounds represented by the general formula (1): wherein R1 represents a phenyl group or the like, R2 represents a hydrogen atom and the like, R3 represents a hydrogen atom and the like, R4 represents a hydrogen atom and the like, R5 represents an alkyl group and the like, R7 represents a hydrogen atom and the like and R8 represents a heterocyclic ring and the like; or a hydrate or pharmaceutically acceptable salt thereof and a medicine which comprises the above compound or a hydrate or pharmaceutically acceptable salt thereof as an active ingredient.
    Type: Grant
    Filed: March 21, 2001
    Date of Patent: July 1, 2003
    Assignee: Chugai Seiyaku Kabushiki Kaisha
    Inventors: Hiroharu Matsuoka, Tsutomu Sato
  • Semiconductor device and method of manufacturing the same
    Patent number: 6570217
    Abstract: To provide a cavity in the portion of the silicon substrate which lies beneath the channel region of the MOS transistor.
    Type: Grant
    Filed: April 22, 1999
    Date of Patent: May 27, 2003
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu Sato, Ichiro Mizushima, Yoshitaka Tsunashima, Toshihiko Iinuma, Kiyotaka Miyano
  • Auxiliary machinery mounting structure of an engine
    Patent number: 6568363
    Abstract: An auxiliary machinery mounting structure of an engine which can reduce the entire length of the engine, enhance the rigidity of a cover seal surface to improve the sealing effect, and also enhance the mounting rigidity of an auxiliary machinery. The auxiliary machinery mounting structure includes a mount seat that is integrally formed on an end surface of a cylinder block extending vertically to a crank shaft of the engine to lie outward of and along a cover seal surface that is a surface engaging with a cover laid over the end surface, and the auxiliary machinery is mounted on the mount seat.
    Type: Grant
    Filed: August 23, 2001
    Date of Patent: May 27, 2003
    Assignee: Honda Giken Kogyo Kabushiki Kaisha
    Inventors: Yoshiaki Koyama, Takayuki Yamagata, Tsutomu Sato, Shigeru Suzuki, Ayumu Matsuo