Patents by Inventor Tsutomu Yamada

Tsutomu Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040215841
    Abstract: Without being restrained to a specific bus scheme, kinds of I/O modules connected to a processing module can be discriminated. Module exclusive selection parts respectively provided in I/O modules connected in a stacked form to a processing module via connectors judge only a module select signal input from terminals in the same position on processing module side connectors to be active. Based thereon, identification information of its own I/O module is output to a predetermined terminal on the connector. Without being restrained to a specific bus scheme, therefore, the processing module can acquire identification information of the I/O modules from a predetermined terminal on a connector. One I/O module can be selected by a simple module selection circuit scheme of inputting module select signals successively output from the processing module to terminals in the same position on processing module side connectors according to the connection order of the I/O modules.
    Type: Application
    Filed: January 20, 2004
    Publication date: October 28, 2004
    Inventors: Tsutomu Yamada, Tetsuaki Nakamikawa, Hiromichi Endoh, Noritaka Matsumoto, Hirokazu Kasashima
  • Publication number: 20040212294
    Abstract: A display having a reflective region capable of simplifying a fabrication process with no requirement for providing a reflective electrode separately from the remaining layers is provided. This display, having a reflective region, comprises a reflective material layer, formed on a region of a substrate corresponding to the reflective region, having a function for serving as a reflective layer, an insulating layer formed on the reflective material layer and a transparent electrode formed on the insulating layer, while the reflective material layer is formed by the same layer as a layer having a prescribed function different from the function for serving as the reflective layer.
    Type: Application
    Filed: April 23, 2004
    Publication date: October 28, 2004
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Nobuhiko Oda, Tsutomu Yamada, Masahiro Okuyama
  • Publication number: 20040189905
    Abstract: According to the present invention, there is provided a display, in which the degradation of a displaying quality caused by a turbulently reflected light beam at the time of exposure can be suppressed. The display according to the present invention having a reflective region and a transmissive region comprises a projecting insulating layer formed in a region corresponding to the reflective region on a substrate and a light shielding layer formed under the projecting insulating layer and formed to extend at least up to a region in which a side end of the projecting insulating layer is located.
    Type: Application
    Filed: March 26, 2004
    Publication date: September 30, 2004
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Nobuhiko Oda, Tsutomu Yamada, Yasushi Miyajima, Shinji Ogawa
  • Patent number: 6798471
    Abstract: A liquid crystal display device comprising: a first substrate and a second substrate processed for vertical alignment; a liquid crystal having a negative dielectric constant anisotropy and being sandwiched between the first and second substrates; a plurality of color filters on the first substrate, each of the color filters having at least a first depression formed therein; a common electrode on the color filters, the common electrode having a plurality of second depressions corresponding to the first depressions of the color filters; and a dielectric material filled into the second depressions of the common electrode, the dielectric material having a dielectric constant smaller than the dielectric constant of the liquid crystal.
    Type: Grant
    Filed: April 25, 2001
    Date of Patent: September 28, 2004
    Assignee: Chi Mei Optoelectronics Corp.
    Inventor: Tsutomu Yamada
  • Publication number: 20040183074
    Abstract: In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.
    Type: Application
    Filed: April 5, 2004
    Publication date: September 23, 2004
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Yushi Jinno, Shiro Nakanishi, Kyoko Hirai, Tsutomu Yamada, Yoshihiro Morimoto, Kiyoshi Yoneda
  • Patent number: 6794675
    Abstract: In an organic electroluminescence (EL) display, a TFT (40) and an organic EL element (60) are formed on an insulating substrate (10) such as a glass substrate. The contact portion between the first electrode region (e.g. the source 43s) of the active layer (43) of the TFT (40) and the organic EL element (60) is formed of a laminated structure. The laminated structure is formed of the structure stacked in layers with p-si forming the source (43s), a refractory metal (Mo), aluminum, a refractory metal (Mo), and ITO forming the anode 61. The reliable contact between the source 43s and the anode 61 can prevent variations in brightness and early degradation in characteristic of the TFT 40 and the organic EL element 60.
    Type: Grant
    Filed: March 23, 2000
    Date of Patent: September 21, 2004
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Koji Suzuki, Tsutomu Yamada, Nobuhiko Oda, Toshifumi Yamaji
  • Patent number: 6795141
    Abstract: A color filter substrate for an LCD device comprises a transparent substrate having a substantially flat surface, a black matrix, a plurality of color filters, an electrode, a plurality of spacers, and an alignment film. The black matrix is formed on predetermined regions of the substrate. The plurality of color filters are formed between the regions of the black matrix with overlapping portions on the edge. The electrode is formed over the black matrix and the color filters. The plurality of spacers are formed on the regions of the black matrix without overlapping with the color filters, and the alignment film for aligning the liquid crystal molecular is formed over the black matrix, the color filters, the electrode, and the spacers.
    Type: Grant
    Filed: January 7, 2002
    Date of Patent: September 21, 2004
    Assignee: Chi Mei Optoelectronics
    Inventor: Tsutomu Yamada
  • Publication number: 20040168834
    Abstract: The present invention is to provide to provide a measuring and printing device by which an operation for replacing a label paper can be performed from the front face of the device and a desired size of the operation screen (display operation unit) can be employed independently of a size of a printer. The measuring and printing device comprises a measuring unit in which a measuring tray is disposed over load cells, and a printing unit for printing prescribed particulars such as the value measured by the measuring unit, wherein the printing unit is disposed substantially at the center of the device and a display operation unit is disposed at the front side of the device, and when the display operation unit has opened, the printing unit is exposed such that a paper can be replaced.
    Type: Application
    Filed: February 6, 2004
    Publication date: September 2, 2004
    Applicant: Teraoka Seiko Co., Ltd.
    Inventors: Kazuharu Teraoka, Tsutomu Yamada
  • Publication number: 20040167281
    Abstract: A rubber composition comprising (1) a diene rubber, (2) a highly saturated rubber, and (3) a block copolymer that comprises a diene polymer block A and a hydrogenated diene polymer block B and has a primary structure selected from the following structures:
    Type: Application
    Filed: December 15, 2003
    Publication date: August 26, 2004
    Inventors: Hideo Takamatsu, Mizuho Maeda, Koji Kitayama, Tsutomu Yamada, Hiroshi Kanbara
  • Patent number: 6781155
    Abstract: An organic EL display device including a first TFT (30) for switching operation, a second TFT (40) for driving an organic EL element, and an organic EL element (60) having an anode (61), a cathode (66), and a light emissive element layer (65) sandwiched between these electrodes. The first TFT (30) has an n-channel and an LDD structure, exhibiting a high-speed response and superior retaining characteristics. The second TFT (40) has a p-channel, and therefore exhibits superior current controllability. By combining these two types of TFTs to drive the organic EL element for each pixel, a high ON current can be achieved with a reduced leakage current, thereby producing a quality gradation display.
    Type: Grant
    Filed: January 19, 2000
    Date of Patent: August 24, 2004
    Assignee: Sanyo Electric Co., Ltd.
    Inventor: Tsutomu Yamada
  • Publication number: 20040155575
    Abstract: Side faces of anodes have a tapered incline that becomes broader toward a lower layer. Thus, an emissive element layer is smoothly formed on the anodes making it possible to prevent field contraction of the electric field. An EL display apparatus having long life and high yield is provided by preventing the emissive element layer from rupturing between an anode and a cathode and by preventing concentration of the electric field at an upper edge of the anode facing the cathode and localized deterioration in the emissive element layer.
    Type: Application
    Filed: January 26, 2004
    Publication date: August 12, 2004
    Inventors: Koji Suzuki, Tsutomu Yamada
  • Publication number: 20040155242
    Abstract: A first semiconductor layer that makes a capacitance coupling with a gate electrode of a thin film transistor through a gate insulating layer and a second semiconductor layer that makes a capacitance coupling with a storage capacitor line of a storage capacitor through the gate insulating layer are formed separately. Also, the first semiconductor layer and the second semiconductor layer are connected by a metal wiring. The gate electrode of the thin film transistor makes capacitance coupling with the first semiconductor layer and the storage capacitor line of the storage capacitor makes capacitance coupling with the second semiconductor layer independently. Voltage are induced in the first semiconductor layer and the second semiconductor layer independently. Since there will be no big discrepancy in voltage in the gate insulating layer, the dielectric break down and the leakage can be prevented.
    Type: Application
    Filed: November 12, 2003
    Publication date: August 12, 2004
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Yasuo Segawa, Masaaki Aota, Tsutomu Yamada
  • Publication number: 20040150351
    Abstract: Power source lines (183) for supplying drive current from power source input terminals (180) to organic EL elements (160) formed in a display pixel region having display pixels are connected by a bypass line (181) along the row direction within the display pixel region. This arrangement minimizes decrease in power source current caused by resistance of the power source lines (183) according to the line length. Accordingly, the organic EL elements (160) can adequately receive the actual desired current, thereby achieving an organic EL device capable of bright displays and having uniform display luminance within the display region.
    Type: Application
    Filed: December 30, 2003
    Publication date: August 5, 2004
    Inventors: Naoaki Komiya, Ryoichi Yokoyama, Tsutomu Yamada, Ryuji Nishikawa
  • Publication number: 20040145694
    Abstract: A gate line is severed before the gate line reaches an Output portion of a vertical driving circuit of a display device, and the separated gate lines are connected by a metal wiring in an upper layer. The gate line is, for example, made of molybdenum, chrome, a molybdenum alloy or a chrome alloy, and the metal is made of aluminum or an aluminum alloy. Since the gate line is severed, the voltage stored in the gate line during the manufacturing process will not be discharged to the gate wiring of the thin film transistor, preventing the break down of the gate insulating layer of the thin film transistor.
    Type: Application
    Filed: November 12, 2003
    Publication date: July 29, 2004
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Yasuo Segawa, Masaaki Aota, Tsutomu Yamada
  • Patent number: 6762818
    Abstract: A color filter substrate for a LCD device comprises a transparent substrate having a substantially flat surface, a black matrix, a color filters portion, an electrode, a plurality of spacers, and an alignment film. The color filter portion having a plurality of colored layers disposed on the transparent substrate. The plurality of spacers each having a first spacer member and a second spacer member, wherein the first spacer member and the second spacer member are formed by different layers in the shape of a parallel construction, and overlap and intersect at an angle such that each of the spacers has an uniform height.
    Type: Grant
    Filed: February 19, 2002
    Date of Patent: July 13, 2004
    Assignee: Chi Mei Optoelectronics
    Inventor: Tsutomu Yamada
  • Patent number: 6753099
    Abstract: The present invention provides a green emitting phosphor which includes an excess of the ordinary SiO2 component included in parent material Y2−2xSiO5 activated by Tb in terms of stoichiometric ratio. The composition of the above phosphor is represented by chemical formula: {(Y1−y−zMyGdz)1−xTbx}2(Si1−bGebO2)1+aO3 where values of x, y, z, a, and b are assigned, subject to 0<x≦1, 0≦y≦1, 0≦z≦1, 0<a≦1, and 0≦b≦1, and M is at least one element selected from a group comprising Sc, In, La, Lu, Yb, Ce, Eu, Sm, Tm, Ho, Er, and Nd. By using this phosphor, phosphors that emit light of higher luminance with less luminance degradation and are suitable for high-quality image display and imaging devices producing high-quality images are obtained.
    Type: Grant
    Filed: June 27, 2002
    Date of Patent: June 22, 2004
    Assignees: Hitachi, Ltd., Hitachi Device Engineering Co., Ltd., Kasei Optonix, Ltd.
    Inventors: Shin Imamura, Masatoshi Shiiki, Masaaki Komatsu, Hidetsugu Matsukiyo, Yoshihiro Koseki, Takashi Hase, Tsutomu Yamada
  • Publication number: 20040117364
    Abstract: An information processing device comprises a display control unit for making a display device display a screen containing a data input box for data specified by data identifying information in accordance with definition information on the screen, a storage unit for storing the data inputted to the data input box together with the data identifying information, and a control unit for searching for the data corresponding to the data identifying information from the storage unit when having the screen displayed, and setting the searched data into the data input box specified by the data identifying information.
    Type: Application
    Filed: November 17, 2003
    Publication date: June 17, 2004
    Applicant: FUJITSU LIMITED
    Inventors: Makiko Kobayashi, Tsutomu Yamada, Mitsuyoshi Yamagishi, Etsuko Sasaki, Junichi Mashiko, Makiko Nakao
  • Patent number: 6750086
    Abstract: In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.
    Type: Grant
    Filed: March 27, 1998
    Date of Patent: June 15, 2004
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Yushi Jinno, Shiro Nakanishi, Kyoko Hirai, Tsutomu Yamada, Yoshihiro Morimoto, Kiyoshi Yoneda
  • Publication number: 20040106246
    Abstract: For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.
    Type: Application
    Filed: November 14, 2003
    Publication date: June 3, 2004
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Hidenori Ogata, Ken Wakita, Kiyoshi Yoneda, Yoshihiro Morimoto, Tsutomu Yamada, Kazuhiro Imao, Takashi Kuwahara
  • Publication number: 20040092295
    Abstract: A server for storing data of a ring tone melody downloaded from a ring tone melody distribution server through a network is disposed. A mobile phone has a memory for storing only one ring tone melody. When there is necessity for the mobile phone to reproduce the ring tone melody, the necessity including occurrence of an incoming call, the mobile phone is connected to the server so as to download the data of the ring tone melody therefrom. Alternatively, a memory of data for a part of a ring tone melody may be disposed in the mobile phone so that the part of the ring tone melody can be reproduced until the rest of the ring tone melody is completely downloaded.
    Type: Application
    Filed: October 24, 2003
    Publication date: May 13, 2004
    Inventor: Tsutomu Yamada