Abstract: A self-diagnosis system of a processor capable of realizing a sufficiently high processing ability for control tasks is provided without deteriorating reliability of safety controls even in complex diagnostic techniques. The self-diagnosis system is equipped with a diagnostic target area allocator for allocating a non-active area within a memory as a diagnosis-ready area, which is not used in a control task under execution by a main processor in an independent manner from the main processor; and a diagnostic executor for executing a diagnosis based upon a predetermined sequence in an independent manner from the main processor. In the self-diagnosis system, a diagnostic target area segmented from the diagnosis-ready area is selected, and a diagnosis of the selected diagnostic target area is carried out in each of diagnostic cycles by the diagnostic executor.

Abstract: The present invention is to provide to provide a measuring and printing device by which an operation for replacing a label paper can be performed from the front face of the device and a desired size of the operation screen (display operation unit) can be employed independently of a size of a printer. The measuring and printing device comprises a measuring unit in which a measuring tray is disposed over load cells, and a printing unit for printing prescribed particulars such as the value measured by the measuring unit, wherein the printing unit is disposed substantially at the center of the device and a display operation unit is disposed at the front side of the device, and when the display operation unit has opened, the printing unit is exposed such that a paper can be replaced.

Abstract: A processing module to use for a processing system having a plurality of processing modules connected via a communication line is comprising mounting position information for the processing module in the communication line; a unique logical address to indicate the processing module; a database to correspond with a physical address of the processing module in the communication line; a position identification device to identify the mounting position information in the communication line of the processing module; a unique/physical address conversion device to fetch the physical address corresponding to the unique logical address from the database using a data packet having the unique logical address as a destination; and a position/physical address conversion device for searching for the physical address from the mounting position information.

Abstract: Side faces of anodes have a tapered incline that becomes broader toward a lower layer. Thus, an emissive element layer is smoothly formed on the anodes making it possible to prevent field contraction of the electric field. An EL display apparatus having long life and high yield is provided by preventing the emissive element layer from rupturing between an anode and a cathode and by preventing concentration of the electric field at an upper edge of the anode facing the cathode and localized deterioration in the emissive element layer.

Abstract: A reflective layer for reflecting light incident from a second substrate side and transmitting through a second electrode made of ITO or the like is formed above a first substrate, a switching element provided for each pixel, and an insulating film covering the switching element, the reflective layer being insulated from the switching element. A first electrode having a work function similar to the second electrode and made of a transparent conductive material such as ITO is formed more proximate to a liquid crystal layer than is the reflective layer and is connected to the switching element. The thickness of the first electrode is set to 100 ? or less or in a range approximately from 750 ? to 1250 ?. Alternatively, the switching element maybe connected to the reflective electrode, the first electrode and the reflective electrode which are formed with an insulating film therebetween may be capacitively coupled, and the first electrode may be driven by the reflective electrode via the capacitor.

Abstract: An LCD apparatus having a liquid crystal layer sealed between a first substrate having a first electrode and a second substrate having a second electrode, wherein the first substrate comprises a reflective layer formed only in a subregion within a pixel region, for reflecting light. A transparent conductive material is used for the first electrode and the first electrode made of the transparent conductive material is layered to cover a transmissive region within a pixel region and over the reflective layer in a reflective region within the pixel region to directly cover the reflective layer.

Abstract: Processed results are received when processors make compatible computations on data of a common object. A computation command signal is generated and fed to the processors in response to a start signal from any one of the processors so that the processors can make computations with different operation timings. Then, the results of the computations made by the processors are compared with each other. Thus, apparatus capable of small size, high performance and safety at the same time can be achieved by the above construction using the processors.

Abstract: A first semiconductor layer that makes a capacitance coupling with a gate electrode of a thin film transistor through a gate insulating layer and a second semiconductor layer that makes a capacitance coupling with a storage capacitor line of a storage capacitor through the gate insulating layer are formed separately. Also, the first semiconductor layer and the second semiconductor layer are connected by a metal wiring. The gate electrode of the thin film transistor makes capacitance coupling with the first semiconductor layer and the storage capacitor line of the storage capacitor makes capacitance coupling with the second semiconductor layer independently. Voltage are induced in the first semiconductor layer and the second semiconductor layer independently. Since there will be no big discrepancy in voltage in the gate insulating layer, the dielectric break down and the leakage can be prevented.

Abstract: On a first substrate, a TFT which is a switching element is provided for each pixel, and above an insulating film covering this TFT, a reflective layer which is insulated from the TFT and which reflects light entering a second substrate and transmitting through a second electrode made of ITO is formed. Further, a first electrode having a work function similar to that of the second electrode and made of a transparent conductive material such as ITO is formed closer to a liquid crystal layer than the reflective layer, and this first electrode is connected with the TFT. With this configuration, the liquid crystal layer can be symmetrically AC driven by the first and second electrodes. A reliable connection between the first electrode and the TFT is provided through a connection metal layer made of a refractory metal.

Abstract: A reflective layer for reflecting light incident from a second substrate side and transmitting through a second electrode made of ITO or the like is formed above a first substrate, a switching element provided for each pixel, and an insulating film covering the switching element, the reflective layer being insulated from the switching element. A first electrode having a work function similar to the second electrode and made of a transparent conductive material such as ITO is formed more proximate to a liquid crystal layer than is the reflective layer and is connected to the switching element. The thickness of the first electrode is set to 100 ? or less or in a range approximately from 750 ? to 1250 ?. Alternatively, the switching element maybe connected to the reflective electrode, the first electrode and the reflective electrode which are formed with an insulating film therebetween may be capacitively coupled, and the first electrode may be driven by the reflective electrode via the capacitor.

Abstract: A rubber composition includes (1) a diene rubber, (2) a silica and (3) an epoxidized liquid diene rubber having a number-average molecular weight of 10000 to 100000, wherein based on 100 parts by mass of the diene rubber (1), the rubber composition comprises 0.1 to 150 parts by mass of the silica (2) and 0.1 to 30 parts by mass of the epoxidized liquid diene rubber (3). A crosslinkable rubber composition includes the above rubber composition and crosslinking agent. A crosslinked article is prepared by crosslinking the above crosslinkable rubber composition. The rubber compositions have improved silica dispersibility in the case of mixing a silica with a diene rubber, excellent processability, and excellent mechanical properties after crosslinking.

Abstract: EL display elements are configured by sequentially laminating an anode, an emissive layer and a cathode, and emit light of R, G, and B. Each EL display element is supplied with a drive current from an EL element driving TFT. The transistor sizes of the EL element driving TFTs connected to the display pixels for respective colors are designated such that the size of the TFT for a green display pixel including an EL element having the highest emissive efficiency is the smallest, and the sizes of the TFTs for red and blue display pixels having sequentially decreasing emissive efficiency are made sequentially larger.

Abstract: In an active matrix type display having built-in drivers, a metal layer is formed over a portion of a transparent substrate and a buffer layer is provided over both the region where the metal layer is formed and over the region where the metal layer is not formed. Above the buffer layer, a first polycrystalline silicon film is provided over the region where the metal layer is formed and a second polycrystalline silicon film is provided over the region where the metal layer is not formed. A buffer layer with sufficient thickness and thermal capacity can provide sufficient distance between the active layers and the lower metal layer to alleviate thermal leakage caused by the metal layer. A first polycrystalline silicon film and a second polycrystalline film each having a proper grain size can be obtained through laser annealing applied under the same conditions on an amorphous silicon film formed over the buffer layer.

Abstract: A supported glass substrate is placed with an element-forming surface thereof facing downward. A mother sealing substrate is placed on a support made of a quartz glass or the like. An ultraviolet-curing sealing resin is applied on the mother sealing substrate. After the glass substrate is aligned with the mother sealing substrate, the glass substrate is pressed toward the sealing substrate. The sealing resin is irradiated with ultraviolet light transmitted through the sealing substrate.

Abstract: For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

Abstract: A protection film on connection wiring is partly removed. The connection wiring, made of a material identical with that of a data line DL, is exposed at a portion where the protection film is removed. A bump is connected to the exposed connection wiring.

Abstract: In a liquid crystal display device, a thickness of a liquid crystal layer in each pixel is adjusted based on a display color (red, green, and blue). For example, thicknesses of color filters corresponding to the display colors are varied based on the display color to set the thickness (cell gap) of the liquid crystal layer in each pixel to a predetermined value corresponding to a transmittance of the liquid crystal. A spacer provided to maintain the cell gap at a constant value is not provided in a region, among the plurality of display colors, having a large cell gap and the spacer is provided above the color filter or the like at a pixel region having smaller cell gap. With this structure, all spacers provided within a cell can substantially contribute to maintaining the gap.

Abstract: In a liquid crystal display device, a thickness of a liquid crystal layer in each pixel is adjusted according to a display color (red, green, and blue). For example, by changing the thickness of the color filter corresponding to the display color according to the display color, a thickness (cell gap) of the liquid crystal layer in each pixel is set to a predetermined value corresponding to the transmittance of light in the liquid crystal. In order to maintain the cell gap at a constant value, heights of spacers formed above the color filters are set to values different from each other according to the thickness of the liquid crystal layer which differs for each display color. With this structure, the spacers substantially contribute to maintaining the gap in the pixel regions of different display colors in which the spacers are formed.

Abstract: In a computer system, a device for and a method of conducting self-diagnosis of failure such as a break and a short circuit of a data communication line remove difficulty of conducting the self-diagnosis of the break and the short circuit only by driving and monitoring the data communication line by itself. For this purpose, a diagnosis module receives information necessary for self-diagnosis from a monitoring module connected to the data communication line. The diagnosis module to conduct self-diagnosis is connected via a diagnosis communication line to the monitoring module to communicate diagnosis information between the modules.

Abstract: In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.