Abstract: An apparatus for inspecting a surface of an object to be processed includes at least one irradiation unit for irradiating a light on the surface of the object; at least one detection unit for detecting a light scattered from the surface of the object in response to the irradiated light; and a determination unit for determining a cause of the scattered light based on the scattered light detected by the detection unit. The irradiation unit irradiates at least one irradiation light of s-polarization and p-polarization while varying an irradiation angle of the irradiated light. The determination unit determines whether the cause of the scattered light is a foreign material or a microscopic defect based on an intensity of the detected scattered light.

Abstract: A semiconductor manufacturing apparatus includes a processing chamber for performing a manufacturing processing on a wafer. A gas supply line for introducing a purge gas is connected to an upper portion of the processing chamber, a valve being installed on the gas supply line. A rough pumping line with a valve a is connected to a lower portion of the processing chamber. Installed on the rough pumping line are a dry pump for exhausting a gas in the processing chamber and a particle monitoring unit for monitoring particles between the valve a and the dry pump. In the semiconductor manufacturing apparatus, after the valve is opened, the purge gas is supplied to apply physical vibration due to shock wave in the processing chamber 100 so that deposits are detached therefrom to be monitored as particles.

Abstract: A semiconductor manufacturing apparatus includes a processing chamber for performing a manufacturing processing on a wafer. A gas supply line for introducing a purge gas is connected to an upper portion of the processing chamber, a valve being installed on the gas supply line. A rough pumping line with a valve a is connected to a lower portion of the processing chamber. Installed on the rough pumping line are a dry pump for exhausting a gas in the processing chamber and a particle monitoring unit for monitoring particles between the valve a and the dry pump. In the semiconductor manufacturing apparatus, after the valve is opened, the purge gas is supplied to apply physical vibration due to shock wave in the processing chamber 100 so that deposits are detached therefrom to be monitored as particles.

Abstract: A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.

Abstract: An atmospheric transfer chamber, connected to an object processing chamber for processing a target object by using a plasma of a halogen-based gas, for transferring the target object therein, the atmospheric transfer chamber includes a dehumidifying unit for dehumidifying air in the atmospheric transfer chamber. The dehumidifying unit includes a desiccant filter, a cooling unit for cooling the air introduced into the atmospheric transfer chamber, and an air conditioner. The atmospheric transfer chamber is connected to a reaction product removal chamber for removing reaction products of a halogen-based gas attached to the target object, wherein halogen in reaction products attached to the target object is reduced.

Abstract: A method for removing water molecules from a vacuum chamber for carrying out a process on a target object in vacuum includes the steps of introducing into the vacuum chamber a water molecule removal gas including at least a reduction gas which reduces the water molecules to produce hydrogen molecules and a halogen-based gas which reacts with the produced hydrogen molecules to produce acid, exhausting gases in the vacuum chamber measuring an amount of water molecules present inside the vacuum chamber, and determining whether or not the measured amount of water molecules is greater than or equal to a threshold value, wherein if the measured amount of water molecules is greater than or equal to the threshold value, the water molecule removal gas is introduced into the vacuum chamber in the introducing step.

Abstract: A gas supply member is disposed in a chamber of a plasma processing apparatus and has a planar surface facing an inner space of the chamber and a plurality of gas holes bored in the planar surface to supply a gas through the gas holes to the inner space. An outer periphery portion of each gas hole at the planar surface has a slant surface formed to correspond to a flow of the gas injected through each gas hole. Further, the slant surface includes at least any one of a flat surface and a curved surface. An angle formed between the slant surface and the planar surface is equal to or greater than that formed between the planar surface and a distribution of the gas injected through each gas hole.

Abstract: A plasma processing apparatus includes a processing chamber, in which a wafer W is plasma-processed, and a CPU controlling an operation of each component. A processing gas is introduced into the processing chamber under a first condition defined by a flow rate and a molecular weight of the processing gas, specifically based on a magnitude of a product A1 (=Q1×m1) of the flow rate Q1 and the molecular weight m1 of the processing gas, and a surface of the wafer W is physically or chemically etched. And then, a pre-purge gas which may be identical to or different from the processing gas is introduced into the processing chamber through a shower head under a second condition derived from the first condition.

Abstract: In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.

Abstract: In a substrate cleaning method for cleaning a backside of a substrate on a surface of which a predetermined processing is performed, a two phase substance contacts the backside of the substrate, and a flow of the substance is generated near the backside of the substrate under a specified pressure. The two phase substance is a gas containing aerosol or a supercritical substance, and the specified pressure is higher than or equal to 133 Pa (1 Torr). Further, in the substrate cleaning method, a high-energy light may be irradiated on the backside of the substrate.

Abstract: A computer readable storage medium storing a program for performing an operation method of a substrate processing apparatus is provided. The operation method includes the steps of introducing a nonreactive gas into the vacuum preparation chamber before the gate valve is opened while the substrate is transferred between the vacuum preparation chamber of the vacuum processing unit and the transfer unit, stopping introducing the nonreactive gas when an inner pressure of the vacuum preparation chamber becomes same as an atmospheric pressure, starting an evacuation process of the corrosive gas in the vacuum preparation chamber and then opening to atmosphere performed by letting the vacuum preparation chamber communicate with an atmosphere, and opening the gate valve after the step of opening to atmosphere.

Abstract: In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.

Abstract: A plasma processing apparatus that is capable of accurately detecting abnormal discharge. A chamber 10 houses a semiconductor wafer W. A susceptor 11 which functions as a lower electrode and a showerhead 33 which functions as an upper electrode are disposed inside the chamber 10, for applying a high-frequency electric power inside the chamber 10. Processing gas supply piping 38 introduces a processing gas into the chamber 10. A potential probe 50 detects fluctuations in potential. An ultrasonic sensor 41 detects ultrasonic waves. A CPU of a PC 52 determines that abnormal discharge has occurred when both the fluctuations in potential and the ultrasonic waves are detected in the same timing.

Abstract: A focus ring is shaped by cutting off a silicon carbide body formed by a sintering method or a CVD method. The shaped focus ring is exposed to a plasma generated from at least one of a carbon tetra fluoride gas and an oxygen gas for producing impurities, and the impurities are introduced to void-like defects existing in the vicinity of a surface of the focus ring. Subsequently, positrons are injected in the vicinity of the surface of the focus ring into which the impurities are introduced, and the defect density in the vicinity of the surface of the focus ring is detected by the positron annihilation method.

Abstract: A ceramic spray-coated member capable of surely controlling adhesion and detachment of water is produced by spraying a given ceramic onto a surface of a base material, in which an organic matter adsorbed on a surface of the ceramic spray-coated member is removed and the surface of the ceramic spray-coated member is stabilized by chemically bonding to water.

Abstract: A ceramic sprayed member-cleaning method which is capable of reliably suppressing desorption and attachment of water. The surface of a ceramic sprayed member and water are chemically bonded to each other, whereby the water is stabilized. Water physically adsorbed on the surface of the ceramic sprayed member is desorbed.

Abstract: There is provided an apparatus for monitoring a size of a particle, including (a) a laser beam source which radiates a laser beam to an area in which particles exist, (b) a photodetector which receives the laser beam having been scattered by the particles, and outputs image data including brightness of pixels, (c) an area detector which detects pixels corresponding to an area on which the scattered laser beam is incident, based on the image data, (d) a maximum brightness detector which detects a maximum brightness among brightness of the pixels detected by the area detector, and (e) a measurement unit which compares the maximum brightness to a predetermined threshold brightness to thereby measure a relative size of the particles.

Abstract: A substrate transfer device includes an accommodating chamber for accommodating a substrate; a substrate transfer unit installed in the accommodating chamber for transferring the substrate; a gas exhaust unit for exhausting the accommodating chamber; and a gas introducing unit for introducing a gas into the accommodating chamber. The substrate transfer unit has a mounting subunit for mounting the substrate thereon, an arm subunit one end of which is connected to the mounting subunit to move the mounting subunit, and an electrode installed in the mounting subunit to which a voltage is applied, and a high voltage is applied to the electrode while the gas is being introduced into the accommodating chamber and the accommodating chamber is being exhausted.

Abstract: An apparatus for inspecting a surface of an object to be processed includes at least one irradiation unit for irradiating a light on the surface of the object; at least one detection unit for detecting a light scattered from the surface of the object in response to the irradiated light; and a determination unit for determining a cause of the scattered light based on the scattered light detected by the detection unit. The irradiation unit irradiates at least one irradiation light of s-polarization and p-polarization while varying an irradiation angle of the irradiated light. The determination unit determines whether the cause of the scattered light is a foreign material or a microscopic defect based on an intensity of the detected scattered light.

Abstract: There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.