Abstract: Provided are a data obtaining section (21) that obtains a time-series data fluctuating in accordance with the plasma conditions, a translation error calculation section (24) that calculates a determinism providing an indicator of whether the time-series data in the plasma are deterministic or stochastic, from the time-series data that have been obtained in the data obtaining unit (21), and an abnormal discharge determination section (26) that determines that the plasma is under the abnormal discharge conditions, in the case that the value representing the determinism calculated in the determinism derivation unit is less than or equal to a given threshold value, during the plasma generation. Examples of the value representing the determinism include translation error or permutation entropy. In the case the permutation entropy is used as a value representing the determinism, a permutation entropy calculation section is provided.

Abstract: An information processing device includes a first input receiving unit, a second input receiving unit, a window function processing unit, a correlation calculating unit, and an output unit. The first input receiving unit is configured to receive first information including a first time-series data related to a semiconductor process. The second input receiving unit is configured to receive second information including a second time-series data related to the semiconductor process. The window function processing unit is configured to retrieve window acquiring information from the first information during an intended period using a window function. The correlation calculating unit is configured to calculate a cross-correlation function between the window acquiring information retrieved by the window function processing unit and the second information. The output unit is configured to output information corresponding to the cross-correlation function calculated by the correlation calculating unit.

Abstract: A roughness evaluation method for evaluating a roughness of lines formed on a substrate includes a measuring step of irradiating light onto a plurality of locations of the substrate and measuring a state of reflected light by a scatterometry; and an analyzing step of evaluating the roughness of the lines based on a variation in value measured in the measuring step. A roughness evaluation system includes an optical device for irradiating light onto the substrate and measuring a state of reflected light by a scatterometry; a moving device for moving the substrate in at least one of an x-direction and a y-directions on a horizontal plane; a controller for controlling the moving device such that the optical device measures a plurality of locations on the substrate; and an analysis unit for evaluating the roughness based on a variation in measured values at the plurality of locations on the substrate.

Abstract: A method of cleaning a powdery source supply system prevents outflow of particles from a chamber or an introduction line in a film forming process. A substrate processing system includes a powdery source supply system and a film forming processing unit. The powdery source supply system includes an ampoule for accommodating a powdery source, a carrier gas supply unit for supplying a carrier gas into the ampoule, an introduction line for connecting the ampoule and the film forming processing unit, a purge line branched from the introduction line, and a valve for opening or closing the introduction line. When the valve is opened and the interior of the purge line is evacuated prior to the film forming process, the carrier gas supply unit supplies a carrier gas so that the viscous force acting on particles by the carrier gas is greater than the viscous force in the film forming process.

Abstract: A foreign material detecting method for detecting a foreign material attached to a substrate surface includes a spraying step of spraying an organic solvent or an oil-phase material containing a halogen element to the substrate surface, a condensing step of emphasizing the foreign material by condensing the sprayed organic solvent or oil-phase material around the foreign material attached to the substrate surface by controlling a temperature of the substrate surface, and a surface inspecting step of detecting the foreign material emphasized by the condensation of the organic solvent or the oil-phase material by a surface inspecting device.

Abstract: A vacuum exhaust method of a substrate processing apparatus, after opening to the atmosphere, depressurizes a vacuum processing chamber having therein a mounting table for mounting a target substrate thereon. The vacuum exhaust method includes covering a surface of the mounting table with a protection member; sealing the vacuum processing chamber; vacuum evacuating the sealed vacuum processing chamber; and adsorbing at least one of foreign substances and out-gases by the protection member.

Abstract: A substrate cleaning method for cleaning and removing foreign materials adhered to a surface of a substrate includes heating the substrate to peel off the foreign materials from the surface of the substrate by a thermal stress, removing the foreign materials from the surface of the substrate by a temperature gradient created in a proximity of the surface of the substrate, and collecting the foreign materials removed from the surface of the substrate by a collecting unit facing the substrate.

Abstract: A particle removal apparatus for removing particles from a chamber of a plasma processing apparatus, wherein the chamber is connected to a gas exhaust port and a plasma of a processing gas is generated in the chamber to plasma process a substrate to be processed, includes a particle charging control member for positively charging particles generated within the chamber by positive ions of an ion sheath region formed in a region other than the vicinity of the substrate to be processed, wherein positively charged particles are discharged from the chamber via the gas exhaust port. Therefore, there is no plasma disturbance or metal contamination, and thus can be applied to a practical use.

Abstract: In a substrate cleaning method for cleaning a backside of a substrate on a surface of which a predetermined processing is performed, a two phase substance contacts the backside of the substrate, and a flow of the substance is generated near the backside of the substrate under a specified pressure. The two phase substance is a gas containing aerosol or a supercritical substance, and the specified pressure is higher than or equal to 133 Pa (1 Torr). Further, in the substrate cleaning method, a high-energy light may be irradiated on the backside of the substrate.

Abstract: A ceramic spray-coated member capable of surely controlling adhesion and detachment of water is produced by spraying a given ceramic onto a surface of a base material, in which an organic matter adsorbed on a surface of the ceramic spray-coated member is removed and the surface of the ceramic spray-coated member is stabilized by chemically bonding to water.

Abstract: Provided are a focusing position determining apparatus, an imaging apparatus, and a focusing position determining method, the method including setting an aperture to a first aperture value; driving a focus lens through a first range of positions as a first drive; during the first drive, obtaining images periodically, and calculating a first sampling of contrast values from the obtained images; calculating a first focus position from the first sampling of contrast values; setting the aperture to a second aperture value; driving a focus lens through a second range of positions as a second drive, the second range of positions being based on the first focus position; during the second drive, obtaining images periodically, and calculating a second sampling of contrast values from the obtained images; calculating a focusing position from the second sampling of contrast values; and driving the focus lens to the calculated focusing position.

Abstract: A valve element that can prevent particles rebounding from an exhausting pump from entering a chamber and also prevent a decrease in exhaust efficiency. The valve element has a through hole that penetrates the valve element along an exhaust flow in an exhaust flow passage between the chamber in which a substrate is subjected to predetermined processing and the exhausting pump having rotary blades rotating at high speed, and a particle trap that covers the through hole. The particle trap has a plurality of preventive members that are arranged such as to obstruct particles rebounding from the exhausting pump. The ratio of openings of the particle trap to the exhaust flow in the exhaust flow passage is not less than a predetermined value.

Abstract: A substrate processing method for a substrate processing system comprising at least a substrate processing apparatus that subjects a substrate to processing, and a substrate transferring apparatus having a transferring device that transfers the substrate, which enables the yield to be increased without bringing about a decrease in the throughput. The substrate processing method comprises a jetting step of jetting a high-temperature gas onto at least one of the transferring device and the substrate transferred by the transferring device.

Abstract: A foreign matter detecting method of detecting foreign matter attached to a peripheral edge of a substrate, which makes it possible to accurately detect foreign matter attached to the peripheral edge of the substrate even if the foreign matter is of a minute size below the detection limit of an existing measuring instrument, and which is highly versatile and suitable for mass production of substrates. The substrate is cooled to condense moisture around the foreign matter attached to the peripheral edge of the substrate, and then the condensed moisture is iced to grow an ice crystal. Then, the foreign matter attached to the peripheral edge of the substrate, which is emphasized by the ice crystal, is detected.

Abstract: Provided are a cleaning device and a cleaning method of a semiconductor manufacturing apparatus, capable of performing a cleaning process more effectively as compared to conventional cases and obtaining a high cleaning effect. A semiconductor manufacturing apparatus cleaning device 100 includes a pure water steam generating vessel 2 for generating pure water steam from pure water; a supply port 5 for supplying the pure water steam to a cleaning target portion; a supply line 4 for connecting the pure water steam generating vessel with the supply port; a collection port 6 for collecting steam used in cleaning from the cleaning target portion; a collection vessel 8 for condensing and collecting the used steam; and a collection line 7 for connecting the collection port 6 with the collection vessel 8.

Abstract: A particle removal apparatus for removing particles from a chamber of a plasma processing apparatus, wherein the chamber is connected to a gas exhaust port and a plasma of a processing gas is generated in the chamber to plasma process a substrate to be processed, includes a particle charging control member for positively charging particles generated within the chamber by positive ions of an ion sheath region formed in a region other than the vicinity of the substrate to be processed, wherein positively charged particles are discharged from the chamber via the gas exhaust port. Therefore, there is no plasma disturbance or metal contamination, and thus can be applied to a practical use.

Abstract: In a substrate cleaning method for cleaning a backside of a substrate on a surface of which a predetermined processing is performed, a two phase substance contacts the backside of the substrate, and a flow of the substance is generated near the backside of the substrate under a specified pressure. The two phase substance is a gas containing aerosol or a supercritical substance, and the specified pressure is higher than or equal to 133 Pa (1 Torr). Further, in the substrate cleaning method, a high-energy light may be irradiated on the backside of the substrate.

Abstract: A substrate transfer device includes an accommodating chamber for accommodating a substrate; a substrate transfer unit installed in the accommodating chamber for transferring the substrate; a gas exhaust unit for exhausting the accommodating chamber; and a gas introducing unit for introducing a gas into the accommodating chamber. The substrate transfer unit has a mounting subunit for mounting the substrate thereon, an arm subunit one end of which is connected to the mounting subunit to move the mounting subunit, and an electrode installed in the mounting subunit to which a voltage is applied, and a high voltage is applied to the electrode while the gas is being introduced into the accommodating chamber and the accommodating chamber is being exhausted.

Abstract: A substrate cleaning apparatus includes a chamber for accommodating a substrate; a mounting table, disposed in the chamber, for mounting thereon the substrate; an electrode disposed in the mounting table, the substrate being attracted and held on the mounting table as a voltage is applied to the electrode; an exhaust unit for exhausting the inside of the chamber; a separating unit for separating the mounting table and the substrate to form a space therebetween; and a gas supply unit for supplying a gas into the space. While the space is formed, voltages of different polarities are alternately applied to the electrode, the gas supply unit supplies a gas into the space and the exhaust unit exhausts the inside of the chamber. The substrate cleaning apparatus further includes a gas introduction unit for introducing a gas into the chamber while the chamber is depressurized and the space is formed.

Abstract: A ceramic spray-coated member capable of surely controlling adhesion and detachment of water is produced by spraying a given ceramic onto a surface of a base material, in which an organic matter adsorbed on a surface of the ceramic spray-coated member is removed and the surface of the ceramic spray-coated member is stabilized by chemically bonding to water.