Patents by Inventor Tsuyoshi Moriya

Tsuyoshi Moriya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ceramic sprayed member-cleaning method
    Patent number: 7942975
    Abstract: A ceramic sprayed member-cleaning method which is capable of reliably suppressing desorption and attachment of water. The surface of a ceramic sprayed member and water are chemically bonded to each other, whereby the water is stabilized. Water physically adsorbed on the surface of the ceramic sprayed member is desorbed.
    Type: Grant
    Filed: January 23, 2009
    Date of Patent: May 17, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Kouji Mitsuhashi
  • Charging method for semiconductor device manufacturing apparatus, storage medium storing program for implementing the charging method, and semiconductor device manufacturing apparatus implementing the charging method
    Patent number: 7937178
    Abstract: A charging method for a semiconductor device manufacturing apparatus, which can appropriately and promptly distribute profits between a customer and a manufacturer according to the yield of semiconductor devices. An indicator related to the yield of the semiconductor devices is measured, and a fee is charged for the usage of the semiconductor device manufacturing apparatus according to the measured indicator.
    Type: Grant
    Filed: August 22, 2007
    Date of Patent: May 3, 2011
    Assignee: Tokyo Electron Limited
    Inventor: Tsuyoshi Moriya
  • VACUUM APPARATUS INCLUDING A PARTICLE MONITORING UNIT, PARTICLE MONITORING METHOD AND PROGRAM, AND WINDOW MEMBER FOR USE IN THE PARTICLE MONITORING
    Publication number: 20110094680
    Abstract: A particle monitoring apparatus includes a housing disposed on a gas exhaust line, a laser beam source for emitting a laser beam to particles in the gas exhaust line, a window member disposed at the housing for monitoring the particles in the gas exhaust line. The window member has a transparent base which is formed of a transparent resin or glass containing silicon and has a gas contact surface which faces a gas within the gas exhaust line, and a surface treatment layer formed on the gas contact surface of the transparent base, wherein the surface treatment layer contains one material selected from the group consisting of yttrium and calcium fluoride.
    Type: Application
    Filed: January 5, 2011
    Publication date: April 28, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tsuyoshi Moriya, Hiroyuki Nakayama
  • Reflecting device, communicating pipe, exhausting pump, exhaust system, method for cleaning the system, storage medium storing program for implementing the method, substrate processing apparatus, and particle capturing component
    Patent number: 7927066
    Abstract: A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.
    Type: Grant
    Filed: March 2, 2006
    Date of Patent: April 19, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Takahiro Murakami, Yoshiyuki Kobayashi, Tetsuji Sato, Eiichi Sugawara, Shosuke Endoh, Masaki Fujimori
  • Substrate cleaning method, substrate cleaning apparatus, substrate processing system, substrate cleaning program and storage medium
    Patent number: 7913702
    Abstract: In a substrate cleaning method for cleaning a backside of a substrate on a surface of which a predetermined processing is performed, a two phase substance contacts the backside of the substrate, and a flow of the substance is generated near the backside of the substrate under a specified pressure. The two phase substance is a gas containing aerosol or a supercritical substance, and the specified pressure is higher than or equal to 133 Pa (1 Torr). Further, in the substrate cleaning method, a high-energy light may be irradiated on the backside of the substrate.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: March 29, 2011
    Assignee: Tokyo Electron Limited
    Inventor: Tsuyoshi Moriya
  • Cleaning apparatus and cleaning method
    Patent number: 7913351
    Abstract: A cleaning apparatus which can efficiently and satisfactorily clean component parts facing narrow spaces. A mixture of a substance in gaseous form and the same substance in liquid form or solid form as the former is jetted out from a jet pipe toward deposits attached to a structural object. The jetted mixture and the deposits to which the mixture has been jetted are sucked into a suction pipe.
    Type: Grant
    Filed: August 24, 2007
    Date of Patent: March 29, 2011
    Assignee: Tokyo Electron Limited
    Inventor: Tsuyoshi Moriya
  • Vacuum apparatus including a particle monitoring unit, particle monitoring method and program, and window member for use in the particle monitoring
    Patent number: 7883779
    Abstract: A semiconductor manufacturing apparatus includes a processing chamber for performing a manufacturing processing on a wafer. A gas supply line for introducing a purge gas is connected to an upper portion of the processing chamber, a valve being installed on the gas supply line. A rough pumping line with a valve a is connected to a lower portion of the processing chamber. Installed on the rough pumping line are a dry pump for exhausting a gas in the processing chamber and a particle monitoring unit for monitoring particles between the valve a and the dry pump. In the semiconductor manufacturing apparatus, after the valve is opened, the purge gas is supplied to apply physical vibration due to shock wave in the processing chamber 100 so that deposits are detached therefrom to be monitored as particles.
    Type: Grant
    Filed: February 28, 2007
    Date of Patent: February 8, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Hiroyuki Nakayama
  • PARTICLE GENERATION FACTOR DETERMINING SYSTEM, CHARGING METHOD AND STORAGE MEDIUM
    Publication number: 20100332364
    Abstract: Provided is a charging method capable of offering a user an incentive to use a particle generation factor determining system. In the particle generation factor determining system including a user interface device 11 through which a user inputs a particle map and a server 13, the server 13 calculates accuracy of each of multiple particle generation factors based on the particle map; the user interface device 11 displays the calculated accuracy or a title of generation-factor-relevant information 27 on each particle generation factor corresponding to this accuracy; the server 13 provides the generation-factor-relevant information 27 to the user interface device 11; a charged fee for providing particle generation-factor-relevant information 27 is determined based on accuracy of a particle generation factor corresponding to the provided generation-factor-relevant information 27.
    Type: Application
    Filed: June 22, 2010
    Publication date: December 30, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Tsuyoshi Moriya
  • Particle monitor system and substrate processing apparatus
    Patent number: 7852476
    Abstract: A particle monitor system capable of accurately detecting the number of or the size of particles flowing through an exhaust pipe. In a bypass line through which a chamber is communicated with a dry pump, there is disposed the particle monitor system that includes a laser oscillator for irradiating laser light, a photo multiplier tube having a focal point thereof located at a location where the center axis of the bypass line crosses the laser light, and a particle converging member formed by a circular disk-like member and formed with a through hole facing the focal point FP. A gap is defined between the bypass line and an outer periphery of the particle converging member.
    Type: Grant
    Filed: January 4, 2008
    Date of Patent: December 14, 2010
    Assignee: Tokyo Electron Limited
    Inventor: Tsuyoshi Moriya
  • INTERNAL MEMBER OF A PLASMA PROCESSING VESSEL
    Publication number: 20100307687
    Abstract: An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.
    Type: Application
    Filed: July 16, 2010
    Publication date: December 9, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kouji MITSUHASHI, Hiroyuki Nakayama, Nobuyuki Nagayama, Tsuyoshi Moriya, Hiroshi Nagaike
  • Exhaust system and exhausting pump connected to a processing chamber of a substrate processing apparatus
    Patent number: 7837432
    Abstract: An exhausting system and an exhausting pump connected to a processing chamber of a substrate processing apparatus are provided. The exhausting pump is provided with at least one rotary blade and a cylindrical intake part disposed at the processing chamber side from the rotary blade. The exhausting pump includes a reflecting device disposed inside the intake part and having at least one reflecting surface oriented to the rotary blade.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: November 23, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Takahiro Murakami, Yoshiyuki Kobayashi, Tetsuji Sato
  • OPTICAL GAS-ANALYSIS SYSTEM AND A GAS FLOW CELL
    Publication number: 20100238446
    Abstract: A gas flow cell for an optical gas-analysis system encompasses a T-shaped configuration, the configuration is implemented by a single sample-gas introduction port provided at a location of a substantial center in a long axis direction, and the single sample-gas introduction port is aligned along a direction orthogonal to the long axis direction.
    Type: Application
    Filed: March 15, 2010
    Publication date: September 23, 2010
    Applicants: SHIMADZU CORPORATION, TOKYO ELECTRON LIMITED
    Inventors: Osamu AKIYAMA, Tsuyoshi MORIYA, Jun YAMAWAKU
  • Vacuum apparatus including a particle monitoring unit, particle monitoring method and program, and window member for use in the particle monitoring
    Patent number: 7797984
    Abstract: A semiconductor manufacturing apparatus includes a processing chamber for performing a manufacturing processing on a wafer. A gas supply line for introducing a purge gas is connected to an upper portion of the processing chamber, a valve being installed on the gas supply line. A rough pumping line with a valve is connected to a lower portion of the processing chamber. Installed on the rough pumping line are a dry pump for exhausting a gas in the processing chamber and a particle monitoring unit for monitoring particles between the valve and the dry pump. In the semiconductor manufacturing apparatus, after the valve is opened, the purge gas is supplied to apply physical vibration due to shock wave in the processing chamber so that deposits are detached therefrom to be monitored as particles.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: September 21, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Hiroyuki Nakayama, Tsuyoshi Moriya
  • ABSORPTION SPECTROMETRIC APPARATUS FOR SEMICONDUCTOR PRODUCTION PROCESS
    Publication number: 20100214557
    Abstract: This absorption spectrometric apparatus for semiconductor production process includes a flow passageway switching mechanism connected to a discharging flow passageway of a processing chamber for a semiconductor production process and a multiple reflection type moisture concentration measuring absorption spectrometric analyzer that allows a laser beam from a laser light source to undergo multiple reflection within a cell, detects a light absorbancy change by a gas within the cell, and measures a moisture concentration within the gas. The flow passageway switching mechanism connects the discharging flow passageway by switching between a measuring flow passageway through which the gas is discharged by passing through the cell and a bypass flow passageway through which the gas is discharged without passing through the cell.
    Type: Application
    Filed: February 17, 2010
    Publication date: August 26, 2010
    Inventors: Osamu Akiyama, Masashi Akimoto, Tsuyoshi Moriya, Jun Yamawaku
  • WORK STATION
    Publication number: 20100216082
    Abstract: A work station is installed in a clean room for assembling or storing a component thereon. The work station includes a mounting member for mounting thereon the component, a heating device for heating to maintain an atmosphere surrounding the component mounted on the mounting member at a high temperature and a cover having an uneven structure for preventing a direct contact between the mounting member and the component by covering the mounting member. Further, at least a part of the uneven structure of the cover, the part being in contact with the component, is made of a material without containing a metal atom.
    Type: Application
    Filed: February 25, 2010
    Publication date: August 26, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tsuyoshi MORIYA, Yuki Hosaka
  • Internal member of a plasma processing vessel
    Patent number: 7780786
    Abstract: An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.
    Type: Grant
    Filed: November 28, 2003
    Date of Patent: August 24, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Kouji Mitsuhashi, Hiroyuki Nakayama, Nobuyuki Nagayama, Tsuyoshi Moriya, Hiroshi Nagaike
  • Substrate processing apparatus, program for performing operation and control method thereof, and computer readable storage medium storing the program
    Patent number: 7756599
    Abstract: A computer readable storage medium storing a program for performing an operation method of a substrate processing apparatus is provided. The operation method includes the steps of introducing a nonreactive gas into the vacuum preparation chamber before the gate valve is opened while the substrate is transferred between the vacuum preparation chamber of the vacuum processing unit and the transfer unit, stopping introducing the nonreactive gas when an inner pressure of the vacuum preparation chamber becomes same as an atmospheric pressure, starting an evacuation process of the corrosive gas in the vacuum preparation chamber and then opening to atmosphere performed by letting the vacuum preparation chamber communicate with an atmosphere, and opening the gate valve after the step of opening to atmosphere.
    Type: Grant
    Filed: October 21, 2005
    Date of Patent: July 13, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Tomoyuki Kudo, Jun Ozawa, Hiroshi Nakamura, Kazunori Kazama, Tsuyoshi Moriya, Hiroyuki Nakayama, Hiroshi Nagaike
  • Particle removal method for a substrate transfer mechanism and apparatus
    Patent number: 7748138
    Abstract: A substrate transfer mechanism for transferring a substrate includes a mounting table on which the substrate is mounted; an arm member connected to the mounting table and moving it. The substrate transfer mechanism further includes a temperature control unit for controlling temperature of the mounting table, wherein the temperature control unit forms a temperature gradient in the mounting table. The temperature control unit includes a detector for detecting temperature in an environment or a chamber in which the substrate transfer mechanism is installed a heater for heating the mounting table and a controller for controlling an operation of the heater based on the temperature in the environment or the chamber detected by the detector.
    Type: Grant
    Filed: May 13, 2005
    Date of Patent: July 6, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Hiroyuki Nakayama, Kikuo Okuyama, Manabu Shimada
  • COMPONENT CLEANING METHOD AND STORAGE MEDIUM
    Publication number: 20100154821
    Abstract: A method for cleaning a component in a substrate processing apparatus including a processing chamber, foreign materials being attached to the component, at least a part of the component being exposed inside the processing chamber, and the substrate processing apparatus being adapted to load and unload a foreign material adsorbing member into and from the processing chamber. The method includes loading the foreign material adsorbing member into the processing chamber; generating a plasma nearer the component than the foreign material adsorbing member; extinguishing the plasma; and unloading the foreign material adsorbing member from the processing chamber, wherein the generation and the extinguishment of the plasma are repeated alternately and the foreign material adsorbing member has a positive potential at least during the extinguishment of the plasma.
    Type: Application
    Filed: December 16, 2009
    Publication date: June 24, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: TSUYOSHI MORIYA, AKITAKA SHIMIZU
  • SUBSTRATE PROCESSING APPARATUS, PROGRAM FOR PERFORMING OPERATION AND CONTROL METHOD THEREOF, AND COMPUTER READABLE STORAGE MEDIUM STORING THE PROGRAM
    Publication number: 20100154995
    Abstract: A computer readable storage medium storing a program for performing an operation method of a substrate processing apparatus is provided. The operation method includes the steps of introducing a nonreactive gas into the vacuum preparation chamber before the gate valve is opened while the substrate is transferred between the vacuum preparation chamber of the vacuum processing unit and the transfer unit, stopping introducing the nonreactive gas when an inner pressure of the vacuum preparation chamber becomes same as an atmospheric pressure, starting an evacuation process of the corrosive gas in the vacuum preparation chamber and then opening to atmosphere performed by letting the vacuum preparation chamber communicate with an atmosphere, and opening the gate valve after the step of opening to atmosphere.
    Type: Application
    Filed: March 5, 2010
    Publication date: June 24, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tomoyuki KUDO, Jun OZAWA, Hiroshi NAKAMURA, Kazunori KAZAMA, Tsuyoshi MORIYA, Hiroyuki NAKAYAMA, Hiroshi NAGAIKE