Patents by Inventor Tue Nguyen

Tue Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040234717
    Abstract: This invention discloses a releasable adhesion layer having good adhesion during high temperature fabrication process in the absence of light, and delaminating at a lower temperature in the presence of light. One embodiment of this invention is a film of polymer whose thermal decomposition temperature changes drastically upon photoexposure. These materials, prior to photoexposure, can withstand temperatures in the range of approximately 200° C. to 300° C. without decomposition, yet decompose at around 100° C. with photoexposure. The releasable adhesion layer can be used in a thermal transfer element, sandwiching a donor substrate and a transfer layer having a plurality of multicomponent transfer units. In the absence of light, the releasable adhesion layer can sustain high temperature processing of these multicomponent transfer units. By photoexposing according to a pattern, the photoexposed multicomponent transfer units can be selectively released at a low temperature to transfer to a receptor.
    Type: Application
    Filed: May 23, 2003
    Publication date: November 25, 2004
    Inventors: James Sheats, Tue Nguyen
  • Publication number: 20040235267
    Abstract: This invention discloses a releasable adhesion layer having good adhesion during high temperature fabrication process in the absence of light, and delaminating at a lower temperature in the presence of light. One embodiment of this invention is a film of polymer whose thermal decomposition temperature changes drastically upon photoexposure. These materials, prior to photoexposure, can withstand temperatures in the range of approximately 200° C. to 300° C. without decomposition, yet decompose at around 100° C. with photoexposure. The releasable adhesion layer can be used in a thermal transfer element, sandwiching a donor substrate and a transfer layer having a plurality of multicomponent transfer units. In the absence of light, the releasable adhesion layer can sustain high temperature processing of these multicomponent transfer units. By photoexposing according to a pattern, the photoexposed multicomponent transfer units can be selectively released at a low temperature to transfer to a receptor.
    Type: Application
    Filed: May 23, 2003
    Publication date: November 25, 2004
    Inventors: James Sheats, Tue Nguyen
  • Publication number: 20040224505
    Abstract: A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film is treated by the first reactant; and repeating the previous steps.
    Type: Application
    Filed: March 1, 2004
    Publication date: November 11, 2004
    Applicant: Tegal Corporation
    Inventors: Tue Nguyen, Tai Dung Nguyen
  • Patent number: 6800254
    Abstract: A visual indicator cold trapping system is provided to allows the visual inspection of the adequacy of a cold trap. The cold trapping system includes a hollow transparent connector operatively connected to the input of the cold trap whereby a visual indication of material collected at the transparent connector shows that there is a problem at the upstream flow of the cold trap. Alternatively, the cold trapping system includes a hollow transparent connector operatively connected to the output of the cold trap whereby a visual indication of material collected at the transparent connector shows that there is a problem at the downstream flow of the cold trap.
    Type: Grant
    Filed: June 7, 2000
    Date of Patent: October 5, 2004
    Assignee: Tegal Corporation
    Inventors: Tue Nguyen, Craig Alan Bercaw
  • Publication number: 20040171251
    Abstract: A multilayer copper structure has been provided for improving the adhesion of copper to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The multilayer copper structure comprises a thin high-resistive copper layer to provide improved adhesion to the underlying diffusion barrier layer, and a low-resistive copper layer to carry the electrical current with minimum electrical resistance. The invention also provides a method to form the multilayer copper structure.
    Type: Application
    Filed: March 8, 2004
    Publication date: September 2, 2004
    Inventor: Tue Nguyen
  • Patent number: 6777331
    Abstract: A multilayered copper structure has been provided for improving the adhesion of copper to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The multilayered copper structure comprises a thin high-resistive copper layer to provide improved adhesion to the underlying diffusion barrier layer, and a low-resistive copper layer to carry the electrical current with minimum electrical resistance. The invention also provides a method to form the multilayered copper structure.
    Type: Grant
    Filed: August 23, 2002
    Date of Patent: August 17, 2004
    Assignee: Simplus Systems Corporation
    Inventor: Tue Nguyen
  • Publication number: 20040151844
    Abstract: A method for protecting an organic polymer underlayer during a plasma assisted process of depositing a subsequent film on the organic polymer underlayer is disclosed. The method provides the deposition of a protective continuous layer using organic polymer damage-free technique in order to not damage the organic polymer underlayer and to protect the organic polymer underlayer during the plasma assisted process of depositing a subsequent film. The organic polymer damage-free technique is a non-plasma process, using only thermal energy and chemical reactions to deposit the continuous layer. The organic polymer damage-free technique can also be a plasma assisted process using a reduced plasma power low enough in order to not damage the organic polymer underlayer.
    Type: Application
    Filed: February 4, 2003
    Publication date: August 5, 2004
    Inventors: Zhihong Zhang, Tai Dung Nguyen, Tue Nguyen
  • Publication number: 20040151845
    Abstract: A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The nanolayer deposition process is a cyclic sequential deposition process, comprising the first step of introducing a first plurality of precursors to deposit a thin film with the deposition process not self limiting, then a second step of purging the first set of precursors and a third step of introducing a second plurality of precursors to modify the deposited thin film. The deposition step in the NLD process using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film such as a modification of film composition, a doping or a removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film.
    Type: Application
    Filed: February 4, 2003
    Publication date: August 5, 2004
    Inventors: Tue Nguyen, Tai Dung Nguyen
  • Publication number: 20040149686
    Abstract: A method for improving the adhesion of a impermeable film on a porous low-k dielectric film in an interconnect structure is disclosed. The method provides an in-situ annealing step before the deposition of the impermeable film to release the volatile trapped molecules such as water, alcohol, HCl, HF vapor, inside the pores of the porous low-k dielectric film. The method also provides an in-situ deposition step of the impermeable film right after the deposition of the porous low dielectric film without exposure to an atmosphere containing trappable molecules. The method further provides an in-situ deposition step of the impermeable film right after the removal a portion of the porous low-k dielectric film without exposure to an atmosphere containing trappable molecules. By the removal of all trapped molecules inside the porous low-k dielectric film, the adhesion between the deposited impermeable film and the low-k dielectric film is improved.
    Type: Application
    Filed: February 4, 2003
    Publication date: August 5, 2004
    Inventors: Zhihong Zhang, Tai Dung Nguyen, Tue Nguyen
  • Publication number: 20040137167
    Abstract: A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the present invention apparatus is a pulsing plasma source capable of either exciting or not-exciting a first precursor. The pulsing plasma source includes an energy source to generate a plasma, and a plasma adjusting system to cause the plasma to either excite or not-excite a precursor. The precursor could flow continuously (an aspect totally new to ALD), or intermittently (or pulsing, standard ALD operation process). The present invention further provides a method to deposit highly controlled layered film on a workpiece. The method comprises the steps of pulsing the plasma to excite/not-excite the precursors and the ambient to deposit and modify the depositing layers. This procedure then can be repeated alternately until the film reaches a desired thickness.
    Type: Application
    Filed: December 23, 2003
    Publication date: July 15, 2004
    Inventor: Tue Nguyen
  • Patent number: 6756318
    Abstract: A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film is treated by the first reactant; and repeating the previous steps.
    Type: Grant
    Filed: September 10, 2001
    Date of Patent: June 29, 2004
    Assignee: Tegal Corporation
    Inventors: Tue Nguyen, Tai Dung Nguyen
  • Publication number: 20040058293
    Abstract: An apparatus for sequential processing of a workpiece comprises an assembly line processing system. The apparatus comprises multiple workpieces moving in an assembly line fashion under multiple process stations. The multiple process stations provide different processes onto the workpieces for a sequential processing of the workpieces. The sequential processing action is carried out by the movement of the workpieces under the various process stations.
    Type: Application
    Filed: August 6, 2002
    Publication date: March 25, 2004
    Inventors: Tue Nguyen, Tai Dung Nguyen, Craig Alan Bercaw
  • Patent number: 6705816
    Abstract: A wafer transfer apparatus provides a rotational and translational motions using only one stationary motor drive. The apparatus includes a drive assembly and a transport arm assembly. The transport arm assembly includes a transport arm rotatably attached to a linking arm. The linking arm is fixedly attached to a sleeve, which is rotatably attached to a housing. A shaft runs axially through the sleeve, and coupled with the transport arm so that rotation of the sleeve relative to the shaft causes the movement of the transport arm assembly. A locking mechanism allows the shaft to be locked to the housing or to the sleeve. A motor fixedly attached to the housing and operational attached to the sleeve. When the shaft is locked to the sleeve, the motor rotates the sleeve and the shaft simultaneously, which effects rotation of the transfer arm relative to the housing.
    Type: Grant
    Filed: June 4, 2002
    Date of Patent: March 16, 2004
    Assignee: Waypoint Technologies
    Inventors: Tue Nguyen, Tai Dung Nguyen
  • Publication number: 20040026374
    Abstract: An apparatus for sequential processing of a workpiece comprises an assembly line processing system. The apparatus comprises multiple workpieces moving in an assembly line fashion under multiple process stations. The multiple process stations provide different processes onto the workpieces for a sequential processing of the workpieces. The sequential processing action is carried out by the movement of the workpieces under the various process stations.
    Type: Application
    Filed: August 6, 2002
    Publication date: February 12, 2004
    Inventors: Tue Nguyen, Tai Dung Nguyen, Craig Alan Bercaw
  • Publication number: 20040026371
    Abstract: An apparatus for sequential and isolated processing of a workpiece comprises a two compartment chamber and a mechanism to transfer the workpiece from one compartment to the other compartment. The transfer mechanism comprises two doors to seal the pathway between the two compartments between movement so that the two compartments are isolated and the workpiece can be processed sequentially and isolatedly in each compartment. The apparatus further comprises components to enable the processing of a workpiece: a delivery system to delivery precursor, a plasma source to generate a plasma and a vacuum pump to maintain a sub-atmospheric pressure. The preferred method of processing a workpiece is to deposit or adsorb a thin layer in the first compartment and then transfer to the second compartment for a reaction or a plasma reaction on the existing thin layer.
    Type: Application
    Filed: August 6, 2002
    Publication date: February 12, 2004
    Inventors: Tue Nguyen, Tai Dung Nguyen, Craig Alan Bercaw
  • Patent number: 6689220
    Abstract: A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the present invention apparatus is a pulsing plasma source capable of either exciting or not-exciting a first precursor. The pulsing plasma source includes an energy source to generate a plasma, and a plasma adjusting system to cause the plasma to either excite or not-excite a precursor. The precursor could flow continuously (an aspect totally new to ALD), or intermittently (or pulsing, standard ALD operation process). The present invention further provides a method to deposit highly controlled layered film on a workpiece. The method comprises the steps of pulsing the plasma to excite/not-excite the precursors and the ambient to deposit and modify the depositing layers. This procedure then can be repeated alternately until the film reaches a desired thickness.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: February 10, 2004
    Assignee: Simplus Systems Corporation
    Inventor: Tue Nguyen
  • Publication number: 20040007581
    Abstract: A semiconductor processing system includes a chamber adapted to process a wafer, the chamber having an opening to facilitate access to the interior of the chamber. The system has a lid coupled to the chamber opening, the lid having an open position and a closed position. An actuator is connected to the lid to move the lid between the closed position and the open position. The system may include a floating pivot coupled to the lid and the actuator to align the lid with the opening when the lid closes.
    Type: Application
    Filed: July 10, 2003
    Publication date: January 15, 2004
    Inventors: Tue Nguyen, Graig Alan Bercaw
  • Patent number: 6669870
    Abstract: A Cu(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.
    Type: Grant
    Filed: March 28, 2001
    Date of Patent: December 30, 2003
    Assignee: Sharp Laboratories of America, Inc.
    Inventors: Wei-Wei Zhuang, Tue Nguyen, Lawrence J. Charneski, David R. Evans, Sheng Teng Hsu
  • Patent number: 6670266
    Abstract: A method has been provided for improving the adhesion of copper to a nitrided metal diffusion barrier material, such as TiN, in an integrated circuit substrate. The method provided a multilayered diffusion barrier structure, comprising a conducting diffusion barrier layer and a poorly conducting adhesion-promoter layer in selected locations. The formation of a poorly conducting adhesion-promoter layer in selected locations permits the optimization of both contact resistance and adhesion property. The poorly conducting adhesion-promoter layer is formed either by the partial incorporation of oxygen into the diffusion barrier or by deposition in an oxygen ambient.
    Type: Grant
    Filed: November 13, 2002
    Date of Patent: December 30, 2003
    Assignee: Simplus Systems Corporation
    Inventors: Tue Nguyen, Tai Dung Nguyen
  • Patent number: 6645860
    Abstract: A method is provided for promoting adhesion of CVD copper to diffusion barrier material in integrated circuit manufacturing. The method uses a two-step CVD copper metallization process. Following deposition of a diffusion barrier layer on the IC substrate, a first layer of CVD copper is deposited on the barrier material. The first layer is preferably thin (less than 300 Å) and deposited using a precursor which yields an adherent conforming layer of copper. The suggested precursor for use in depositing the first layer of CVD copper is (hfac)Cu(1,5-Dimethylcyclooctadiene). The first layer of CVD copper serves as a “seed” layer to which a subsequently-deposited “fill” or “bulk” layer of CVD copper will readily adhere. The second copper deposition step of the two-step process is the deposit of a second layer of copper by means of CVD using another precursor, different from (hfac)Cu(1,5-Dimethylcyclooctadiene).
    Type: Grant
    Filed: November 1, 2001
    Date of Patent: November 11, 2003
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Lawrence J. Charneski, Tue Nguyen, Gautam Bhandari