Abstract: A precursor delivery system emulsifier is provided for delivery a mixture of liquid and gas precursors. Since the liquid precursor is mixed with a gas, the flow pattern of the emulsified precursor can be controlled and modified and the relatively large flow rate of the emulsified precursor prevents the line from being clogged. Further, the mixing of the liquid precursor and gas at a site outside the vaporization chamber permits the liquid precursor line to remain cool, so that even the small diameter line remains unclogged.

Abstract: A wafer transfer apparatus provides a rotational and translational motions using only one stationary motor drive. The apparatus includes a drive assembly and a transport arm assembly. The transport arm assembly includes a transport arm rotatably attached to a linking arm. The linking arm is fixedly attached to a sleeve, which is rotatably attached to a housing. A shaft runs axially through the sleeve, and coupled with the transport arm so that rotation of the sleeve relative to the shaft causes the movement of the transport arm assembly. A locking mechanism allows the shaft to be locked to the housing or to the sleeve. A motor fixedly attached to the housing and operational attached to the sleeve. When the shaft is locked to the sleeve, the motor rotates the sleeve and the shaft simultaneously, which effects rotation of the transfer arm relative to the housing.

Abstract: Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

Abstract: An apparatus to perform semiconductor processing includes a process chamber; a plasma generator for generating a plasma in the process chamber, the plasma generator having a control input to control the generation of plasma, the plasma generator capable of providing a typical tune response time of less than one second for most plasma processes; and a controller coupled to the control input of the plasma generator to control the generation of the plasma.

Abstract: A vapor supply apparatus, for use in a semiconductor device manufacturing process, provides a three-dimensional showerhead for supplying various precursors to a reaction chamber. The three-dimensional showerhead comprises an inverted-cup structure having double walls, an outer wall and an inner wall, with the double walls defining a first interior volume and the inner wall defining an exterior cavity, the inverted-cup structure further has a plurality of first inlet ports connected to the outer wall for introducing first precursors into the first interior volume and a plurality of first outlet ports at the inner wall for discharging the first precursor vapor from the first interior volume to the exterior cavity. The three-dimensional showerhead confines the precursor vapor inside the external cavity to modify the processed film characteristics.

Abstract: A replaceable shielding apparatus provides a cost effective way of shielding a portion of a workpiece during processing. The apparatus includes a replaceable shield, made of comparable weight as the workpiece for allowing replacement of the shield in the same way as the replacement of the workpiece. With this feature, the replacement of the shield is a routine process and would not interfere much with the workpiece operation. The invention further includes a shield clamp for clamping the shield onto the workpiece. In a preferred embodiment, the invention further includes a non-reactive gas inlet for creating a pressurized cavity in the vicinity of the shielded portion of the workpiece.

Abstract: A plasma enhanced chemical vapor deposition (PECVD) process is provided for depositing one or more dielectric material layers on a substrate for use in interconnect structures of integrated circuits. The method comprises the steps of depositing a fluorinated amorphous carbon (a-F:C) layer on a substrate by providing a fluorine containing gas, preferably octafluorocyclobutane, and a carbon containing gas, preferably methane, in ratio of approximately 5.6, so as to deposit a a-F:C layer having an internal compressive stress of approximately 28 MPa After deposition the film is annealed at approximately 400° C. for approximately two hours. An adhesion promoter layer of relatively hydrogen-free hydrogeneated silicon carbide is then deposited on the a-F:C layer using silane (SiH4) and methane (CH4) as the deposition gases.

Abstract: An apparatus monitors process vapor includes a process chamber where the process vapor originates, the process chamber having a backflow pathway for removing the process vapor. The apparatus includes a sensor responsive to the process vapor in the backflow pathway and a controller coupled to the sensor. The controller activates a safety mode if the sensor detects that the concentration of the process vapor exceeds a selective threshold value.

Abstract: An apparatus for semiconductor processing includes a process chamber having a process evacuation pathway from the process volume to atmosphere; a transfer module to transfer a workpiece to and from the process chamber, the transfer module and process chamber in combination defining a backflow pathway; and a backflow remover element coupled to the backflow pathway, the backflow remover element removing a portion of process vapor in the backflow pathway.

Abstract: A system captures one or more images of a process chamber having a view port. The system includes a radiation source to generate radiation; and a camera coupled to the process chamber and adapted to receive the radiation from the radiation source illuminating the process chamber.

Abstract: A semiconductor processing system includes a chamber adapted to process a wafer, the chamber having an opening to facilitate access to the interior of the chamber. The system has a lid coupled to the chamber opening, the lid having an open position and a closed position. An actuator is connected to the lid to move the lid between the closed position and the open position. The system may include a floating pivot coupled to the lid and the actuator to align the lid with the opening when the lid closes.

Abstract: A method is provided for promoting adhesion of CVD copper to diffusion barrier material in integrated circuit manufacturing. The method uses a two-step CVD copper metallization process. Following deposition of a diffusion barrier layer on the IC substrate, a first layer of CVD copper is deposited on the barrier material. The first layer is preferably thin (less than 300 Å) and deposited using a precursor which yields an adherent conforming layer of copper. The suggested precursor for use in depositing the first layer of CVD copper is (hfac)Cu(1,5-Dimethylcyclooctadiene). The first layer of CVD copper serves as a “seed” layer to which a subsequently-deposited “fill” or “bulk” layer of CVD copper will readily adhere. The second copper deposition step of the two-step process is the deposit of a second layer of copper by means of CVD using another precursor, different from (hfac)Cu(1,5-Dimethylcyclooctadiene).

Abstract: A system delivers radiation to a substrate with a radiation source to generate radiation having a source intensity distribution pattern; and a redistribution radiation guide adapted to receive the radiation from the radiation source and to direct the radiation from one region to different regions on the substrate so that the substrate intensity distribution pattern is different from the source pattern.

Abstract: An apparatus controls deposition rate of multi-layer films deposited by chemical vapor deposition (CVD). The apparatus includes a CVD chamber; a vapor precursor injector coupled to the CVD chamber; and a liquid precursor injector coupled to the CVD chamber.

Abstract: A system and method of selectively etching copper surfaces free of copper oxides in preparation for the deposition of an interconnecting metallic material is provided The method removes metal oxides with &bgr;-diketones, such as Hhfac. The Hhfac is delivered into the system in vapor form, and reacts almost exclusively to copper oxides. The by-products of the cleaning process are likewise volatile for removal from the system with a vacuum pressure. Since the process is easily adaptable to most IC process systems, it can be conducted in an oxygen-free environment, without the removal of the IC from the process chamber. The in-situ cleaning process permits a minimum amount of copper oxide to reform before the deposition of the overlying interconnection metal. In this manner, a highly conductive electrical interconnection between the copper surface and the interconnecting metal material is formed.

Abstract: A method is provided for promoting adhesion of CVD copper to diffusion barrier material in integrated circuit manufacturing. The method uses a two-step CVD copper metallization process. Following deposition of a diffusion barrier layer on the IC substrate, a first layer of CVD copper is deposited on the barrier material. The first layer is preferably thin (less than 300 Å) and deposited using a precursor which yields an adherent conforming layer of copper. The suggested precursor for use in depositing the first layer of CVD copper is (hfac)Cu(1,5-Dimethylcyclooctadiene). The first layer of CVD copper serves as a “seed” layer to which a subsequently-deposited “fill” or “bulk” layer of CVD copper will readily adhere. The second copper deposition step of the two-step process is the deposit of a second layer of copper by means of CVD using another precursor, different from (hfac)Cu(1,5-Dimethylcyclooctadiene).

Abstract: An integral susceptor-wall reactor apparatus, for use in a semiconductor device manufacturing process, employs an integral susceptor for improving the serviceability of the reactor. The use of the integral susceptor wall in the reactor allows the replacement of failed parts in the susceptor.

Abstract: A multi-thermal zone shielding apparatus provides a multi-zone temperature profile for the shield while shielding a portion of a hot workpiece in a high temperature processing system. The apparatus keeps the workpiece temperature hot at the shielded area and maintaining the rest of the shield cooler. The apparatus comprises a multi-thermal zone shield having a low thermal transmitivity section for preventing the heat lost of the shielded portion of the hot workpiece due to less thermal energy transmitting through the shielding portion of the shield, thus maintaining a more uniform temperature at the shielded portion of the workpiece, and a high thermal transmitivity section in the rest of shield for allowing more thermal energy from the hot workpiece transmitting through the shield without heating the shield, thus maintaining a cooler temperature at the portion of the shield not engaged with the workpiece.

Abstract: A method is provided to clean the interior surfaces, and especially the wafer chuck, of a metal vapor deposition chamber. The method takes advantage of the fact that the chamber controls the introduction and removal of chemical atmospheres, and the temperature inside the chamber. The method first oxidizes the surface to be cleaned with an oxygen plasma, and then removes the oxide products as a vapor with the use of Hhfac. The oxidization is controlled through the use of oxygen atmosphere, temperature, and radio frequency power levels. In this manner, the wafer chuck is cleaned of deposition byproducts without disassembly of the chamber.

Abstract: A method of forming a volatile copper precursor for chemical vapor deposition of copper metal thin film includes formation of a volatile liquid having a chemical formula of (n-R-m-cyclohexene)Cu(I)(hfac) or (n-R-m-cyclopentene)Cu(I)(hfac), where n,m=1-6, and where R is a alkyl, such as methyl and ethyl.