Abstract: The present invention relates to a recombinant antigen and an isolated polynucleotide of porcine reproductive and respiratory syndrome virus (PRRSV), a composition including the same and a method of making the same. The recombinant antigen is a chimeric protein of PRRSV dual structural proteins and T-cell epitope. The polynucleotide encodes an amino acid sequence of the recombinant antigen. The recombinant protein expressed by the polynucleotide in an eukaryotic expression system can be beneficial for mass production and purification. An immunogenic composition including the recombinant antigen can promote pro-inflammatory M1-phenotype polarization of porcine alveolar macrophages (PAMs), reduce receptor CD163 expression that is mediated for viral entry and activate T helper (Th1) immune responses, thereby being applied to a vaccine composition against PRRSV.

Abstract: A system and method of using machine learning to predict the pharmacokinetics of a therapeutic radiopharmaceutical on a subject patient using the biodistribution data of the patient in order to dynamically treat the patient using the radiopharmaceutical.

Abstract: An integrated circuit (IC) may include a plurality of functional blocks, and each functional block of the plurality of functional blocks may include hardware circuits, wherein the plurality of functional blocks may include a first functional block. In addition, the first functional block may include a first macro circuit that is positioned within a first sub-region of the first functional block, wherein among multiple sides of the first sub-region, a first side of the first sub-region is closest to a boundary of the first functional block. Additionally, a first intermediate sub-region of the first functional block is positioned between the first side of the first sub-region and the boundary of the first functional block, and there is no tap cell in the first intermediate sub-region of the first functional block.

Abstract: The present disclosure provides a semiconductor device package including a first device, a second device, and a spacer. The first device includes a substrate having a first dielectric constant. The second device includes a dielectric element, an antenna, and a reinforcing element. The dielectric element has a second dielectric constant less than the first dielectric constant. The antenna is at least partially within the dielectric element. The reinforcing element is disposed on the dielectric element, and the reinforcing element has a third dielectric constant greater than the first dielectric constant.

Abstract: Provided is a circuit board structure including a substrate, a loop-wrapping ground layer, an insulating structure, a first build-up layer, a top wiring layer, a bottom wiring layer, a first conductive via, and a plurality of second conductive vias. The aforementioned structure defines a signal transmitting structure. An equivalent circuit of the signal transmitting structure at least includes a first equivalent circuit, a second equivalent circuit, a third equivalent circuit and a fourth equivalent circuit, which correspond to different uniform transmitting sections respectively. The first equivalent circuit, the second equivalent circuit, the third equivalent circuit and the fourth equivalent circuit are connected in series with each other according to an ABCD transmission matrix series connection principle.

Abstract: An electronic device package includes a first substrate, a second substrate and a conductive layer. The first substrate includes a first bonding pad, and a cavity exposing the first bonding pad. The second substrate is laminated on the first substrate. The second substrate includes a second bonding pad at least partially inserting into the cavity of the first substrate. The conductive layer is disposed in the cavity and at least between the first bonding pad and the second bonding pad to connect the first bonding pad and the second bonding pad.

Abstract: The present disclosure provides a semiconductor device package including a first device, a second device, and a spacer. The first device includes a substrate having a first dielectric constant. The second device includes a dielectric element, an antenna, and a reinforcing element. The dielectric element has a second dielectric constant less than the first dielectric constant. The antenna is at least partially within the dielectric element. The reinforcing element is disposed on the dielectric element, and the reinforcing element has a third dielectric constant greater than the first dielectric constant. The spacer is disposed between the first device and the second device and configured to define a distance between the first device and the second device.

Abstract: A circuit board structure includes a substrate, a first build-up structure layer, first and second external circuit layers, at least one first conductive via, and second conductive vias. The first build-up structure layer is disposed on a first circuit layer of the substrate. The first external circuit layer is disposed on the first build-up structure layer. The second external circuit layer is disposed on a second circuit layer and a portion of a third dielectric layer of the substrate. The first conductive via is electrically connected to the first external circuit layer and the second external circuit layer to define a signal path. The second conductive vias surround the first conductive via, and the first external circuit layer, the second conductive vias, the first circuit layer, the outer conductive layer, and the second external circuit layer define a first ground path. The first ground path surrounds the signal path.

Abstract: An electronic device package includes a first substrate, a second substrate and a conductive layer. The first substrate includes a first bonding pad, and a cavity exposing the first bonding pad. The second substrate is laminated on the first substrate. The second substrate includes a second bonding pad at least partially inserting into the cavity of the first substrate. The conductive layer is disposed in the cavity and at least between the first bonding pad and the second bonding pad to connect the first bonding pad and the second bonding pad.

Abstract: A connector assembly for connecting a valve seat with an outlet pipe and a faucet having the same are provided. The valve seat includes an outlet channel provided with an insertion hole and a first axial connection portion arranged at an outer cylindrical wall thereof. The first axial connection portion is located below the insertion hole. The outlet pipe includes an inlet end provided with a mounting portion and a second axial connection portion arranged at an outer surface of the outlet pipe and located close to the mounting portion. The second axial connection portion is detachably mounted into the first axial connection portion from bottom up to form a rotation point. By the outlet pipe rotated around the rotation point, the mounting portion is forced to be mounted and positioned inside the insertion hole of the valve seat firmly with sealing effect.

Abstract: A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a substrate, an electronic component, an intermediate structure and a protective layer. The electronic component is disposed over the substrate. The intermediate structure is disposed over the substrate and comprises an interposer and a conductive element on the interposer. The protective layer is disposed over the substrate and has an upper surface covering the electronic component and being substantially level with an upper surface of the conductive element.

Abstract: A semiconductor device and method of fabricating the same are disclosed. The method includes depositing a polysilicon gate layer over a gate dielectric formed over a surface of a substrate in a peripheral region, forming a dielectric layer over the polysilicon gate layer and depositing a height-enhancing (HE) film over the dielectric layer. The HE film, the dielectric layer, the polysilicon gate layer and the gate dielectric are then patterned for a high-voltage Field Effect Transistor (HVFET) gate to be formed in the peripheral region. A high energy implant is performed to form at least one lightly doped region in a source or drain region in the substrate adjacent to the HVFET gate. The HE film is then removed, and a low voltage (LV) logic FET formed on the substrate in the peripheral region. In one embodiment, the LV logic FET is a high-k metal-gate logic FET.

Abstract: A semiconductor device and methods of fabrication the same are disclosed. In one embodiment, the semiconductor device may include a non-volatile memory (NVM) cell including a memory gate stack and a select gate stack separated by an inter-gate dielectric disposed in a memory region of a substrate, a low voltage field-effect transistor (LVFET) including a first high-K metal-gate (HKMG) stack disposed in a peripheral region of the substrate, and a high voltage field-effect transistor (HVFET) including a second HKMG stack disposed in the peripheral region, in which top surfaces of the memory gate stack and the select gate stack of the NVM cell, the LVFET, and the HVFET have an approximately same elevation from the substrate or are substantially co-planar. Other embodiments are also disclosed within.

Abstract: A connector assembly for connecting a valve seat with an outlet pipe and a faucet having the same are provided. The valve seat includes an outlet channel provided with an insertion hole and a first axial connection portion arranged at an outer cylindrical wall thereof. The first axial connection portion is located below the insertion hole. The outlet pipe includes an inlet end provided with a mounting portion and a second axial connection portion arranged at an outer surface of the outlet pipe and located close to the mounting portion. The second axial connection portion is detachably mounted into the first axial connection portion from bottom up to form a rotation point. By the outlet pipe rotated around the rotation point, the mounting portion is forced to be mounted and positioned inside the insertion hole of the valve seat firmly with sealing effect.

Abstract: An electronic device includes a substrate, a driving component and an electronic component. The driving component is arranged on the substrate, wherein the driving component includes a first electrode and a first optical adjustment unit, the first optical adjustment unit is arranged on the first electrode, and the first optical adjustment unit has a first opening to expose a surface of the first electrode. The electronic component is arranged on the driving component, wherein the electronic component includes a second electrode electrically connected to the first electrode of the driving component through the first opening of the first optical adjustment unit.

Abstract: A semiconductor device and method of fabricating the same are disclosed. The method includes depositing a polysilicon gate layer over a gate dielectric formed over a surface of a substrate in a peripheral region, forming a dielectric layer over the polysilicon gate layer and depositing a height-enhancing (HE) film over the dielectric layer. The HE film, the dielectric layer, the polysilicon gate layer and the gate dielectric are then patterned for a high-voltage Field Effect Transistor (HVFET) gate to be formed in the peripheral region. A high energy implant is performed to form at least one lightly doped region in a source or drain region in the substrate adjacent to the HVFET gate. The HE film is then removed, and a low voltage (LV) logic FET formed on the substrate in the peripheral region. In one embodiment, the LV logic FET is a high-k metal-gate logic FET.

Abstract: In an example embodiment, a method comprises: forming first spacers adjacent to a memory cell formed on a substrate, each of the first spacers being formed in direct contact with the substrate, where forming the memory cell includes forming a control gate electrode and a tunnel oxide layer over the substrate and subsequently etching completely at least the control gate electrode and the tunnel oxide layer that are disposed beyond the memory cell; forming an interlayer dielectric layer over the memory cell and the first spacers; forming a contact hole through the interlayer dielectric layer to at least reach the substrate; subsequent to forming the contact hole, forming a second spacer adjacent to one of the first spacers, where a height of the second spacer is greater than a height of the first spacers, the second spacer substantially contacting the substrate and the interlayer dielectric layer; and forming a contact in the contact hole.

Abstract: An electronic device package includes a first substrate, a second substrate and a conductive layer. The first substrate includes a first bonding pad, and a cavity exposing the first bonding pad. The second substrate is laminated on the first substrate. The second substrate includes a second bonding pad at least partially inserting into the cavity of the first substrate. The conductive layer is disposed in the cavity and at least between the first bonding pad and the second bonding pad to connect the first bonding pad and the second bonding pad.

Abstract: The present disclosure provides a semiconductor device package including a first device, a second device, and a spacer. The first device includes a substrate having a first dielectric constant. The second device includes a dielectric element, an antenna, and a reinforcing element. The dielectric element has a second dielectric constant less than the first dielectric constant. The antenna is at least partially within the dielectric element. The reinforcing element is disposed on the dielectric element, and the reinforcing element has a third dielectric constant greater than the first dielectric constant.

Abstract: A circuit board, including a first dielectric material, a second dielectric material, a third dielectric material, a fourth dielectric material, a first external circuit layer, a second external circuit layer, a conductive structure, a first conductive via, and multiple second conductive vias, is provided. The first conductive via at least passes through the first dielectric material and the fourth dielectric material, and is electrically connected to the first external circuit layer and the second external circuit layer to define a signal path. The second conductive vias pass through the first dielectric material, the second dielectric material, the third dielectric material, and a part of the conductive structure, and surround the first conductive via. The second conductive vias are electrically connected to the first external circuit layer, the conductive structure, and the second external circuit layer to define a ground path, and the ground path surrounds the signal path.