Abstract: A circuit board, including a first dielectric material, a second dielectric material, a third dielectric material, a fourth dielectric material, a first external circuit layer, a second external circuit layer, a conductive structure, a first conductive via, and multiple second conductive vias, is provided. The first conductive via at least passes through the first dielectric material and the fourth dielectric material, and is electrically connected to the first external circuit layer and the second external circuit layer to define a signal path. The second conductive vias pass through the first dielectric material, the second dielectric material, the third dielectric material, and a part of the conductive structure, and surround the first conductive via. The second conductive vias are electrically connected to the first external circuit layer, the conductive structure, and the second external circuit layer to define a ground path, and the ground path surrounds the signal path.

Abstract: An electronic device package includes a first substrate, a second substrate and a conductive layer. The first substrate includes a first bonding pad, and a cavity exposing the first bonding pad. The second substrate is laminated on the first substrate. The second substrate includes a second bonding pad at least partially inserting into the cavity of the first substrate. The conductive layer is disposed in the cavity and at least between the first bonding pad and the second bonding pad to connect the first bonding pad and the second bonding pad.

Abstract: A semiconductor device and method of fabricating the same are disclosed. The method includes depositing a polysilicon gate layer over a gate dielectric formed over a surface of a substrate in a peripheral region, forming a dielectric layer over the polysilicon gate layer and depositing a height-enhancing (HE) film over the dielectric layer. The HE film, the dielectric layer, the polysilicon gate layer and the gate dielectric are then patterned for a high-voltage Field Effect Transistor (HVFET) gate to be formed in the peripheral region. A high energy implant is performed to form at least one lightly doped region in a source or drain region in the substrate adjacent to the HVFET gate. The HE film is then removed, and a low voltage (LV) logic FET formed on the substrate in the peripheral region. In one embodiment, the LV logic FET is a high-k metal-gate logic FET.

Abstract: The present disclosure provides a semiconductor device package including a first device, a second device, and a spacer. The first device includes a substrate having a first dielectric constant. The second device includes a dielectric element, an antenna, and a reinforcing element. The dielectric element has a second dielectric constant less than the first dielectric constant. The antenna is at least partially within the dielectric element. The reinforcing element is disposed on the dielectric element, and the reinforcing element has a third dielectric constant greater than the first dielectric constant. The spacer is disposed between the first device and the second device and configured to define a distance between the first device and the second device.

Abstract: A shoe rack includes a frame, at least one board, two rear connectors and two front connectors. The frame includes two lateral subframes each of which comprises at least one tilted beam. Each of the rear connectors includes a shaft rotatably connected to the board and a clip engaged with the tilted beam of one of the lateral subframes. Each of the front connectors includes a shaft rotatably connected to the board, a first clip, and a second clip located closer to the shaft than the first clip. The board extends horizontally when the first clip is engaged with the tilted beam of one of the lateral subframes. The board is tilted when the second clip is engaged with the tilted beam of one of the lateral subframes.

Abstract: A shoe rack includes a frame, at least one board, two rear connectors and two front connectors. The frame includes two lateral subframes each of which comprises at least one tilted beam. Each of the rear connectors includes a shaft rotatably connected to the board and a clip engaged with the tilted beam of one of the lateral subframes. Each of the front connectors includes a shaft rotatably connected to the board, a first clip, and a second clip located closer to the shaft than the first clip. The board extends horizontally when the first clip is engaged with the tilted beam of one of the lateral subframes. The board is tilted when the second clip is engaged with the tilted beam of one of the lateral subframes.

Abstract: The present invention relates to a recombinant antigen and an isolated polynucleotide of porcine reproductive and respiratory syndrome virus (PRRSV), a composition including the same and a method of making the same. The recombinant antigen is a chimeric protein of PRRSV dual structural proteins and T-cell epitope. The polynucleotide encodes an amino acid sequence of the recombinant antigen. The recombinant protein expressed by the polynucleotide in an eukaryotic expression system can be beneficial for mass production and purification. An immunogenic composition including the recombinant antigen can promote pro-inflammatory M1-phenotype polarization of porcine alveolar macrophages (PAMs), reduce receptor CD163 expression that is mediated for viral entry and activate T helper (Th1) immune responses, thereby being applied to a vaccine composition against PRRSV.

Abstract: An integrated circuit (IC) may include a plurality of functional blocks, and each functional block of the plurality of functional blocks may include hardware circuits, wherein the plurality of functional blocks may include a first functional block. In addition, the first functional block may include a first macro circuit that is positioned within a first sub-region of the first functional block, wherein among multiple sides of the first sub-region, a first side of the first sub-region is closest to a boundary of the first functional block. Additionally, a first intermediate sub-region of the first functional block is positioned between the first side of the first sub-region and the boundary of the first functional block, and there is no tap cell in the first intermediate sub-region of the first functional block.

Abstract: The present disclosure provides a semiconductor device package including a first device, a second device, and a spacer. The first device includes a substrate having a first dielectric constant. The second device includes a dielectric element, an antenna, and a reinforcing element. The dielectric element has a second dielectric constant less than the first dielectric constant. The antenna is at least partially within the dielectric element. The reinforcing element is disposed on the dielectric element, and the reinforcing element has a third dielectric constant greater than the first dielectric constant.

Abstract: In an example embodiment, a method comprises: forming first spacers adjacent to a memory cell formed on a substrate, each of the first spacers being formed in direct contact with the substrate, where forming the memory cell includes forming a control gate electrode and a tunnel oxide layer over the substrate and subsequently etching completely at least the control gate electrode and the tunnel oxide layer that are disposed beyond the memory cell; forming an interlayer dielectric layer over the memory cell and the first spacers; forming a contact hole through the interlayer dielectric layer to at least reach the substrate; subsequent to forming the contact hole, forming a second spacer adjacent to one of the first spacers, where a height of the second spacer is greater than a height of the first spacers, the second spacer substantially contacting the substrate and the interlayer dielectric layer; and forming a contact in the contact hole.

Abstract: The present invention discloses methods of treating imbalance of plasma lipids level, fatty liver, nephritis or vascular fibrosis with M2C macrophages. The M2C macrophages used in said methods is prepared by isolating mononuclear cells from bone marrow or peripheral blood, then inducing the mononuclear cells to differentiate into M2 macrophages by macrophage colony stimulating factor (M-CSF), and then inducing the M2 macrophages to polarize into MERTK-expressing M2C macrophages by baicalin. The treatment of imbalance of plasma lipids level comprises increasing proportion of high-density lipoprotein cholesterol in plasma lipids. The invention also provides methods of treating fatty liver and nephritis in a subject in need, comprising the step of administering a therapeutically effective amount of MERTK-expressing M2C macrophages.

Abstract: A semiconductor device and method of making the same are disclosed. The semiconductor device includes a memory gate on a charge storage structure formed on a substrate, a select gate on a gate dielectric on the substrate proximal to the memory gate, and a dielectric structure between the memory gate and the select gate, and adjacent to sidewalls of the memory gate and the select gate, wherein the memory gate and the select gate are separated by a thickness of the dielectric structure. Generally, the dielectric structure comprises multiple dielectric layers including a first dielectric layer adjacent the sidewall of the memory gate, and a nitride dielectric layer adjacent to the first dielectric layer and between the memory gate and the select gate. Other embodiments are also disclosed.

Abstract: A system and method of using machine learning to predict the pharmacokinetics of a therapeutic radiopharmaceutical on a subject patient using the biodistribution data of the patient in order to dynamically treat the patient using the radiopharmaceutical.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first electronic component having an active surface and a backside surface opposite to the active surface and a first antenna layer disposed on the backside surface of the first electronic component. The semiconductor device package further includes a first dielectric layer covering the first antenna layer and a second antenna layer disposed over the first antenna layer. The second antenna layer is spaced apart from the first antenna layer by the first dielectric layer. A method of manufacturing a semiconductor device package is also disclosed.

Abstract: A semiconductor device having a substrate, a dielectric layer, a polycrystalline silicon (“poly”) resistor, a drain, and a source is disclosed. After implantation, the poly resistor may have a lateral doping profile with two peaks, one near each edge of the poly resistor, and a trough near the middle of the poly resistor. Such a doping profile can allow the poly resistor to have a resistance that is insensitive to small variations in critical dimension of the poly resistor. The resistance of the poly resistor may be determined by the doping dose of the tilted implant used to form the poly resistor. The tilted implant may be used to form the drain and the source of a transistor substantially simultaneously as forming the poly resistor.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first electronic component having an active surface and a backside surface opposite to the active surface and a first antenna layer disposed on the backside surface of the first electronic component. The semiconductor device package further includes a first dielectric layer covering the first antenna layer and a second antenna layer disposed over the first antenna layer. The second antenna layer is spaced apart from the first antenna layer by the first dielectric layer. A method of manufacturing a semiconductor device package is also disclosed.

Abstract: An electronic device package includes a first conductive substrate, a second conductive substrate and a dielectric layer. The first conductive substrate has a first coefficient of thermal expansion (CTE). The second conductive substrate is disposed on an upper surface of the first conductive substrate and electrically connected to the first conductive substrate. The second conductive substrate has a second CTE. The dielectric layer is disposed on the upper surface of the first conductive substrate and disposed on at least one sidewall of the second conductive substrate. The dielectric layer has a third CTE. A difference between the first CTE and the second CTE is larger than a difference between the first CTE and the third CTE.

Abstract: An electronic device package includes a first substrate, a second substrate and a conductive layer. The first substrate includes a first bonding pad, and a cavity exposing the first bonding pad. The second substrate is laminated on the first substrate. The second substrate includes a second bonding pad at least partially inserting into the cavity of the first substrate. The conductive layer is disposed in the cavity and at least between the first bonding pad and the second bonding pad to connect the first bonding pad and the second bonding pad.

Abstract: A semiconductor device and method of fabricating the same are disclosed. The method includes depositing a polysilicon gate layer over a gate dielectric formed over a surface of a substrate in a peripheral region, forming a dielectric layer over the polysilicon gate layer and depositing a height-enhancing (HE) film over the dielectric layer. The HE film, the dielectric layer, the polysilicon gate layer and the gate dielectric are then patterned for a high-voltage Field Effect Transistor (HVFET) gate to be formed in the peripheral region. A high energy implant is performed to form at least one lightly doped region in a source or drain region in the substrate adjacent to the HVFET gate. The HE film is then removed, and a low voltage (LV) logic FET formed on the substrate in the peripheral region. In one embodiment, the LV logic FET is a high-k metal-gate logic FET.

Abstract: Techniques for suppression of program disturb in flash memory devices are described herein. In an example embodiment, a method for suppression of program disturb in a flash memory array is provided. The flash memory array comprises rows and columns of memory cells, where the memory cells in each row are coupled to a source line and to a select-gate (SG) line, and the memory cells in each column are coupled to a respective bit line (BL). During a program memory operation, a first voltage, of a selected SG line, and a second voltage, of an unselected BL, are regulated independently of a power supply voltage of the flash memory array, where the first voltage is regulated in a first range of 0.9V to 1.1V and the second voltage is regulated in a second range of 0.4V to 1.2V.