Abstract: A non-contact and optical measuring automation system, configured to electrically connect to a computer to measure the profile accuracy of a disk cam, includes a base, a rotating chuck, a moving stage module and a laser displacement meter. The rotating chuck is disposed for clamping the disk cam. The moving stage module includes a first linear motion stage movable relative to the base in a first direction and a second linear motion stage movable relative to the first linear motion stage in a second direction. The computer is able to control the rotation of the rotating chuck and the movement of the moving stage module, and is able to control a beam emitted from the laser displacement meter projecting onto a profile surface of the disk cam so as to obtain a profile deviation value of the disk cam by using the laser triangulation method.

Abstract: This invention provides a cell line of M2C macrophage and its applications. The cell line is derived from monocytes isolated from bone marrows and peripheral blood. The monocytes were differentiated into M2 macrophage by macrophage colony-stimulating factor (M-CSF), and then the polarization of M2C macrophage was induced by baicalin. The MERTK, PTX3, and PD-L1 expression level of the M2C macrophage are high and promote phagocytosis. Hence it can be applied to cell therapy or biological agents of immune regulation. Also, the macrophage-conditioned medium and wound dressing prepared on the M2C cell have the effects of enhancing fibroblast proliferation and angiogenesis, which can improve wound healing in medical use, and can be applied to skin care product for skin repair and rejuvenation.

Abstract: Disclosed herein is a system for mediating connection for assisting a first node of a network for NAT traversal. The system for mediating connection includes at least three response servers respectively for receiving a detection message passing through a router from the first node, and for sending a response message passing through the router to the first node according to the detection message. The response message includes an EPN. The at least three response servers are configured to respectively add the EPNs into the response messages after a port number of each of the detection messages received by the at least three response servers is modified, by the router, as the EPNs respectively, wherein a connection is built between the first node and a second node according to a second rule for proximal EPNs and a network address of the second node.

Abstract: A memory device includes a memory array arranged in rows and columns. The memory array may have at least four non-volatile memory (NVM) cells coupled in the same column of the memory array, in which each NVM cell may include a memory gate. The first and second NVM cells of the at least four NVM cells may share a first source region, and the third and fourth NVM cells may share a second source region. The memory gates of the first and second NVM cells may not be electrically coupled with one another, and the first and second source regions may not be electrically coupled with one another. Each of the first and second source regions may be electrically coupled with at least another source region of the same column in the memory array.

Abstract: A semiconductor device and method of fabricating the same are disclosed. The method includes depositing a polysilicon gate layer over a gate dielectric formed over a surface of a substrate in a peripheral region, forming a dielectric layer over the polysilicon gate layer and depositing a height-enhancing (HE) film over the dielectric layer. The HE film, the dielectric layer, the polysilicon gate layer and the gate dielectric are then patterned for a high-voltage Field Effect Transistor (HVFET) gate to be formed in the peripheral region. A high energy implant is performed to form at least one lightly doped region in a source or drain region in the substrate adjacent to the HVFET gate. The HE film is then removed, and a low voltage (LV) logic FET formed on the substrate in the peripheral region. In one embodiment, the LV logic FET is a high-k metal-gate logic FET.

Abstract: Systems and methods of forming such include method, forming a memory gate (MG) stack in a first region, forming a sacrificial polysilicon gate on a high-k dielectric in a second region, wherein the first and second regions are disposed in a single substrate. Then a select gate (SG) may be formed adjacent to the MG stack in the first region of the semiconductor substrate. The sacrificial polysilicon gate may be replaced with a metal gate to form a logic field effect transistor (FET) in the second region. The surfaces of the substrate in the first region and the second region are substantially co-planar.

Abstract: A semiconductor device and method of making the same are disclosed. The semiconductor device includes a memory gate on a charge storage structure formed on a substrate, a select gate on a gate dielectric on the substrate proximal to the memory gate, and a dielectric structure between the memory gate and the select gate, and adjacent to sidewalls of the memory gate and the select gate, wherein the memory gate and the select gate are separated by a thickness of the dielectric structure. Generally, the dielectric structure comprises multiple dielectric layers including a first dielectric layer adjacent the sidewall of the memory gate, and a nitride dielectric layer adjacent to the first dielectric layer and between the memory gate and the select gate. Other embodiments are also disclosed.

Abstract: A non-contact and optical measuring automation system includes a base, a rotating chuck to clamp a disk cam, a moving stage module and an optical measuring module. The moving stage module includes a first linear motion stage movably disposed on the base, a second linear motion stage movably disposed on the first linear motion stage, and a rotary motion stage rotatably disposed on the second linear motion stage. The optical measuring module disposed on the rotary motion stage includes a laser-emitting unit and an image-capturing unit. The laser-emitting unit projects a light beam onto a cam surface of the disk cam, and the image-capturing unit receives scattering light to capture a grayscale measuring image including a profile speckle pattern. A computer calculates a profile speckle characteristic value according to the grayscale measuring image and the surface roughness value according to the profile speckle characteristic value.

Abstract: Integrated capacitor structures and methods for fabricating same are provided. In an embodiment, the integrated capacitor structures exploit the capacitance that can be formed in a plane that is perpendicular to that of the substrate, resulting in three-dimensional capacitor structures. This allows for integrated capacitor structures with higher capacitance to be formed over relatively small substrate areas. Embodiments are suitable for use by charge pumps and can be fabricated to have more or less capacitance as desired by the application.

Abstract: A split gate device that includes a memory gate and a select gate disposed side by side, a dielectric structure having a first portion disposed between the memory gate and a substrate and a second portion disposed along an inner sidewall of the select gate to separate the select gate from the memory gate, and a spacer formed over the select gate along an inner sidewall of the memory gate. Other embodiments of embedded split gate devices including high voltage and low voltage transistors are also disclosed.

Abstract: Methods and apparatuses pertaining to hold-time compensation using free metal segments or other electrically-conductive segments of an IC are described. An integrated circuit (IC) having free segment hold-time compensation may include a monolithic semiconductor substrate which has a first device and a second device disposed thereon. In addition, the IC may include an electrical node electrically connecting the first and second devices. The electrical node may include one or more electrically-conductive elements that contribute to a total capacitance at the electrical node such that the total capacitance at the electrical node has a value that fulfills a hold-time requirement at the electrical node.

Abstract: A memory device includes a memory array arranged in rows and columns. The memory array may have at least four non-volatile memory (NVM) cells coupled in the same column of the memory array, in which each NVM cell may include a memory gate. The first and second NVM cells of the at least four NVM cells may share a first source region, and the third and fourth NVM cells may share a second source region. The memory gates of the first and second NVM cells may not be electrically coupled with one another, and the first and second source regions may not be electrically coupled with one another. Each of the first and second source regions may be electrically coupled with at least another source region of the same column in the memory array.

Abstract: Techniques for suppression of program disturb in flash memory devices are described herein. In an example embodiment, an apparatus comprises a flash memory device coupled to a microprocessor. The flash memory device comprises rows and columns of memory cells, where the memory cells in each row are coupled to a source line and to a select-gate (SG) line, and the memory cells in each column are coupled to a respective bit line (BL). A control circuit in the flash memory device is configured to regulate both a first voltage, of a selected SG line, and a second voltage, of an unselected BL, independently of a power supply voltage of the flash memory device, and to adjust at least one of the first voltage and the second voltage based on a measure of an operating temperature of the flash memory device.

Abstract: A semiconductor device and method of making the same are disclosed. The semiconductor device includes a memory gate on a charge storage structure formed on a substrate, a select gate on a gate dielectric on the substrate proximal to the memory gate, and a dielectric structure between the memory gate and the select gate, and adjacent to sidewalls of the memory gate and the select gate, wherein the memory gate and the select gate are separated by a thickness of the dielectric structure. Generally, the dielectric structure comprises multiple dielectric layers including a first dielectric layer adjacent the sidewall of the memory gate, and a nitride dielectric layer adjacent to the first dielectric layer and between the memory gate and the select gate. Other embodiments are also disclosed.

Abstract: Disclosed herein is a system for mediating connection for assisting a first node of a network for NAT traversal. The system for mediating connection includes at least three response servers respectively for receiving a detection message passing through a router from the first node, and for sending a response message passing through the router to the first node according to the detection message. The response message includes an EPN. The at least three response servers are configured to respectively add the EPNs into the response messages after a port number of each of the detection messages received by the at least three response servers is modified, by the router, as the EPNs respectively, wherein a connection is built between the first node and a second node according to a second rule for proximal EPNs and a network address of the second node.

Abstract: A memory device includes a memory array arranged in rows and columns. The memory array may have at least four non-volatile memory (NVM) cells coupled in the same column of the memory array, in which each NVM cell may include a memory gate. The first and second NVM cells of the at least four NVM cells may share a first source region, and the third and fourth NVM cells may share a second source region. The memory gates of the first and second NVM cells may not be electrically coupled with one another, and the first and second source regions may not be electrically coupled with one another. Each of the first and second source regions may be electrically coupled with at least another source region of the same column in the memory array.

Abstract: A semiconductor device and method of making the same are disclosed. The semiconductor device includes a metal-gate logic transistor formed in a first region of a substrate, and a non-volatile memory (NVM) cell including a select gate and a memory gate formed in a first recess in a second region of the same substrate, wherein the recess is recessed relative to a first surface of the substrate. The metal-gate logic transistor includes a planarized surface above and substantially parallel to the first surface, and top surfaces of the select gate and memory gate are approximately at or below an elevation of the planarized surface of the metal-gate. Generally, at least one of the top surfaces of the select gate or the memory gate includes a silicide formed thereon. Other embodiments are also disclosed.

Abstract: A memory device includes a memory array arranged in rows and columns. The memory array may have at least four non-volatile memory (NVM) cells coupled in the same column of the memory array, in which each NVM cell may include a memory gate. The first and second NVM cells of the at least four NVM cells may share a first source region, and the third and fourth NVM cells may share a second source region. The memory gates of the first and second NVM cells may not be electrically coupled with one another, and the first and second source regions may not be electrically coupled with one another. Each of the first and second source regions may be electrically coupled with at least another source region of the same column in the memory array.

Abstract: Embodiments provide a split gate device, methods for fabricating a split gate device, and integrated methods for fabricating a split gate device and a periphery device. In an embodiment, the split gate device is a charge trapping split gate device, which includes a charge trapping layer. In another embodiment, the split gate device is a non-volatile memory cell, which can be formed according to embodiments as standalone or embedded with a periphery device.