Abstract: An IC structure includes a biologically sensitive field-effect transistor (BioBET) in a semiconductor substrate, and a dielectric layer over a backside surface of the semiconductor substrate. The dielectric layer has a sensing well extending through the dielectric layer to a channel region of the BioFET. The IC structure further includes a biosensing film, a plurality of fluid channel walls, and a first heater. The biosensing film lines the sensing well in the dielectric layer. The fluid channel walls are over the biosensing film and define a fluid containment region over the sensing well of the dielectric layer. The first heater is in the semiconductor substrate. The first heater has at least a portion overlapping with the fluid containment region.

Abstract: A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.

Abstract: A target material identification method includes the following steps. A bio-sensing integrated circuit having a sensor array is provided. The sensor array is divided into 1st-Nth assays, and the 1st-Nth assays are coated with different probes. A calibration process is performed to obtain 1st-Nth pre-test measurement values respectively for the 1st-Nth assays. A sample fluid having the target material therein is provided onto the 1st-Nth assays. A bio-sensing process is performed on the sample fluid to obtain 1st-Nth post-test measurement values respectively for the 1st-Nth assays. The 1st-Nth pre-test measurement values are compared with the corresponding 1st-Nth post-test measurement values, so as to determine whether the target material is bind to the probes in each of the 1st-Nth assays. An assay having the target material bind to the probe is marked as a binding assay. The target material is identified based on the probe in the binding assay.

Abstract: A fluidic cartridge module includes a casing, a biosensor package, and a fluidic channel. The casing includes a sample inlet and a buffer inlet, a biosensor package disposed in the casing and comprising a sensor array and a reference electrode. The fluidic channel is disposed over the biosensor package and connected to the sample inlet and the buffer inlet, wherein the fluidic channel includes a first opening aligned with the sensor array and a second opening aligned with the reference electrode.

Abstract: A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.

Abstract: An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.

Abstract: An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.

Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

Abstract: A concentration determination method includes the following steps. A sample fluid having a target material therein is diluted with a 1st dilution factor to an Nth dilution factor to form a 1st sample to an Nth sample. A bio-sensing integrated circuit having a 1st assay to an Nth assay is provided. The 1st sample to the Nth sample are respectively applied to the 1st assay to the Nth assay. A bio-sensing process is performed on the 1st sample to the Nth sample to obtain a 1st measurement value to an Nth measurement value. The 1st measurement value to the Nth measurement value are compared with a threshold value to determine a threshold dilution factor, which corresponds to a largest dilution factor that has a measurement value higher than the threshold value. A concentration of the target material is calculated based on the threshold dilution factor and a limit of detection.

Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

Abstract: A method of manufacturing a semiconductor structure includes forming an active region having a first portion which is doped. The method further includes forming a first silicide layer over and electrically coupled to the first portion of the active region. The method further includes forming a second silicide layer under and electrically coupled to the first portion of the active region. The method further includes forming a first metal-to-drain/source (MD) contact structure over and electrically coupled to the first silicide layer. The method further includes forming a first via-to-MD (VD) structure over and electrically coupled to the MD contact structure. The method further includes forming a buried via-to-source/drain (BVD) structure under and electrically coupled to the second silicide layer.

Abstract: A semiconductor device including: a first S/D arrangement including a silicide-sandwiched portion of a corresponding active region having a silicide-sandwiched configuration, a first portion of a corresponding metal-to-drain/source (MD) contact structure, a first via-to-MD (VD) structure, and a first buried via-to-source/drain (BVD) structure; a gate structure over a channel portion of the corresponding active region; and a second S/D arrangement including a first doped portion of the corresponding active region; and at least one of the following: an upper contact arrangement including a first silicide layer over the first doped portion, a second portion of the corresponding MD contact structure; and a second VD structure; or a lower contact arrangement including a second silicide layer under the first doped portion, and a second BVD structure.

Abstract: A method of operating an integrated circuit includes using a first switching device to couple a bio-sensing device to a first signal path, generating, using the bio-sensing device, a bio-sensing signal on the first signal path in response to an electrical characteristic of a sensing film, using a second switching device to couple a temperature-sensing device to a second signal path, and generating, using the temperature-sensing device, a temperature-sensing signal on the second signal path in response to a temperature of the sensing film. The first and second switching devices, the bio-sensing device, the temperature-sensing device, and the sensing film are components of a sensing pixel of a plurality of sensing pixels of the integrated circuit.

Abstract: An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.

Abstract: An integrated circuit includes two or more rows of heating elements, two or more columns of heating elements, and a plurality of sensing areas. Each sensing area is between two adjacent rows of the rows of heating elements and between two adjacent columns of the columns of heating elements and includes a bio-sensing device and a temperature-sensing device.

Abstract: An integrated circuit includes two or more rows of heating elements, two or more columns of heating elements, and a plurality of sensing circuits. Each sensing circuit is between two adjacent rows of the rows of heating elements and between two adjacent columns of the columns of heating elements, in a same silicon layer as the rows of heating elements and the columns of heating elements, and configured to generate a bio-sensing signal and a temperature-sensing signal.

Abstract: An integrated circuit includes an interconnection structure, first and second sensing pixels over the interconnection structure, and an isolation layer over the first and second sensing pixels. Each of the first and second sensing pixels includes a bio-sensing device, a temperature-sensing device, one or more heating elements adjacent to the bio-sensing device and the temperature-sensing device, and a sensing film over the bio-sensing device. The isolation layer includes a first opening configured to expose the sensing film of the first sensing pixel without exposing the sensing film of the second sensing pixel and a second opening configured to expose the sensing film of the second sensing pixel without exposing the sensing film of the first sensing pixel.