Patents by Inventor Tung-Tsun Chen

Tung-Tsun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250130198
    Abstract: A method includes following steps. A beating pulse of a cardiac cell is monitored by using a biologically sensitive field-effect transistor (BioFET) disposed within a semiconductor substrate. A temperature around the cardiac cell is detected by using a temperature-sensing diode disposed within the semiconductor substrate. In response to the detected temperature falling below a predetermined threshold, the cardiac cell is heated by using a heater disposed within the semiconductor substrate. The cardiac cell is placed within a fluid containment region above the BioFET, and the temperature-sensing diode occupies a larger area within the fluid containment region than the heater.
    Type: Application
    Filed: December 31, 2024
    Publication date: April 24, 2025
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tung-Tsun CHEN, Yi-Hsing HSIAO, Jui-Cheng HUANG, Yu-Jie HUANG
  • Patent number: 12222317
    Abstract: An IC structure includes a biologically sensitive field-effect transistor (BioBET) in a semiconductor substrate, and a dielectric layer over a backside surface of the semiconductor substrate. The dielectric layer has a sensing well extending through the dielectric layer to a channel region of the BioFET. The IC structure further includes a biosensing film, a plurality of fluid channel walls, and a first heater. The biosensing film lines the sensing well in the dielectric layer. The fluid channel walls are over the biosensing film and define a fluid containment region over the sensing well of the dielectric layer. The first heater is in the semiconductor substrate. The first heater has at least a portion overlapping with the fluid containment region.
    Type: Grant
    Filed: November 30, 2023
    Date of Patent: February 11, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tung-Tsun Chen, Yi-Hsing Hsiao, Jui-Cheng Huang, Yu-Jie Huang
  • Publication number: 20240377352
    Abstract: Various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. In some embodiments, a substrate comprises a pair of first source/drain regions and a pair of second source/drain regions. Further, a first gate electrode and a second gate electrode underlie the substrate. The first gate electrode is laterally between the first source/drain regions, and the second gate electrode is laterally between the second source/drain regions. An interconnect structure underlies the substrate and defines conductive paths electrically shorting the second source/drain regions and the second gate electrode together. A passivation layer is over the substrate and defines a first well and a second well. The first and second wells respectively overlie the first and second gate electrodes, and a sensing layer lines the substrate in the first and second wells. In some embodiments, sensing probes are in the first well, but not the second well.
    Type: Application
    Filed: July 23, 2024
    Publication date: November 14, 2024
    Inventors: Katherine H. Chiang, Jui-Cheng Huang, Ke-Wei Su, Tung-Tsun Chen, Wei Lee, Pei-Wen Liu
  • Publication number: 20240271287
    Abstract: The present disclosure provides a gas sensor. The gas sensor includes a substrate, an insulating layer over the substrate, a conductor layer over and in contact with a top surface of the substrate, and a gas sensing film. The conductor layer includes a conductive pattern having a plurality of openings, and the conductive pattern is embedded in the insulating layer. The gas sensing film is formed over a portion of the conductive pattern.
    Type: Application
    Filed: April 17, 2024
    Publication date: August 15, 2024
    Inventors: MING-TA LEI, CHIA-HUA CHU, HSIN-CHIH CHIANG, TUNG-TSUN CHEN, CHUN-WEN CHENG
  • Publication number: 20240234526
    Abstract: A semiconductor device includes: a first arrangement including first and second silicide layers correspondingly electrically coupled to opposing first and second sides of a doped first portion of an active region; and a second arrangement including a third silicide layer electrically coupled to a first or second side of a doped second portion of the active region.
    Type: Application
    Filed: March 25, 2024
    Publication date: July 11, 2024
    Inventors: Chung-Hui CHEN, Tung-Tsun CHEN, Jui-Cheng HUANG
  • Publication number: 20240171160
    Abstract: A sensing circuit coupled to a sensor includes a first transistor, a second transistor, a third transistor, a fourth transistor, and an oscillator. The first transistor, coupled to a first current source and the sensor, receives a sensing current from the sensor. A gate terminal of the first transistor is connected to a source terminal of the first transistor. The second transistor, coupled to the first transistor and a second current source, generates a first current according to the sensing current. The first current is greater than the sensing current. The third transistor, coupled to the second transistor and the second current source, generates a second current according to the first current. The fourth transistor, coupled to the third transistor, generates a third current. The oscillator is coupled to the fourth transistor. The oscillator generates a signal having an oscillation frequency according to the third current.
    Type: Application
    Filed: February 7, 2023
    Publication date: May 23, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tung-Tsun Chen, Ruey-Bin Sheen, Chih-Hsien Chang, Cheng-Hsiang Hsieh
  • Patent number: 11987891
    Abstract: The present disclosure provides a gas sensor. The gas sensor includes a substrate, a conductor layer over the substrate, wherein the conductor layer includes a conductive pattern including a plurality of openings, the openings being arranged in a repeating pattern, an insulating layer in the plurality of openings and over a top surface of the conductive pattern, wherein the conductive pattern is embedded in the insulating layer, and a gas sensing film over a portion of the insulating layer.
    Type: Grant
    Filed: June 20, 2022
    Date of Patent: May 21, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ming-Ta Lei, Chia-Hua Chu, Hsin-Chih Chiang, Tung-Tsun Chen, Chun-Wen Cheng
  • Patent number: 11980864
    Abstract: A method of operating an integrated circuit includes using a first switching device to couple a bio-sensing device to a first signal path, generating, using the bio-sensing device, a bio-sensing signal on the first signal path in response to an electrical characteristic of a sensing film, using a second switching device to couple a temperature-sensing device to a second signal path, and generating, using the temperature-sensing device, a temperature-sensing signal on the second signal path in response to a temperature of the sensing film. The first and second switching devices, the bio-sensing device, the temperature-sensing device, and the sensing film are components of a sensing pixel of a plurality of sensing pixels of the integrated circuit.
    Type: Grant
    Filed: August 10, 2022
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
    Inventors: Tung-Tsun Chen, Yi-Shao Liu, Jui-Cheng Huang, Chin-Hua Wen, Felix Ying-Kit Tsui, Yung-Chow Peng
  • Patent number: 11967621
    Abstract: A method of manufacturing a semiconductor structure includes forming an active region having a first portion which is doped. The method further includes forming a first silicide layer over and electrically coupled to the first portion of the active region. The method further includes forming a second silicide layer under and electrically coupled to the first portion of the active region. The method further includes forming a first metal-to-drain/source (MD) contact structure over and electrically coupled to the first silicide layer. The method further includes forming a first via-to-MD (VD) structure over and electrically coupled to the MD contact structure. The method further includes forming a buried via-to-source/drain (BVD) structure under and electrically coupled to the second silicide layer.
    Type: Grant
    Filed: January 18, 2023
    Date of Patent: April 23, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chung-Hui Chen, Tung-Tsun Chen, Jui-Cheng Huang
  • Publication number: 20240102959
    Abstract: An IC structure includes a biologically sensitive field-effect transistor (BioBET) in a semiconductor substrate, and a dielectric layer over a backside surface of the semiconductor substrate. The dielectric layer has a sensing well extending through the dielectric layer to a channel region of the BioFET. The IC structure further includes a biosensing film, a plurality of fluid channel walls, and a first heater. The biosensing film lines the sensing well in the dielectric layer. The fluid channel walls are over the biosensing film and define a fluid containment region over the sensing well of the dielectric layer. The first heater is in the semiconductor substrate. The first heater has at least a portion overlapping with the fluid containment region.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 28, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tung-Tsun CHEN, Yi-Hsing HSIAO, Jui-Cheng HUANG, Yu-Jie HUANG
  • Publication number: 20240085398
    Abstract: A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Inventors: Kun-Lung Chen, Tung-Tsun Chen, Cheng-Hsiang Hsieh, Yu-Jie Huang, Jui-Cheng Huang
  • Publication number: 20240044887
    Abstract: A target material identification method includes the following steps. A bio-sensing integrated circuit having a sensor array is provided. The sensor array is divided into 1st-Nth assays, and the 1st-Nth assays are coated with different probes. A calibration process is performed to obtain 1st-Nth pre-test measurement values respectively for the 1st-Nth assays. A sample fluid having the target material therein is provided onto the 1st-Nth assays. A bio-sensing process is performed on the sample fluid to obtain 1st-Nth post-test measurement values respectively for the 1st-Nth assays. The 1st-Nth pre-test measurement values are compared with the corresponding 1st-Nth post-test measurement values, so as to determine whether the target material is bind to the probes in each of the 1st-Nth assays. An assay having the target material bind to the probe is marked as a binding assay. The target material is identified based on the probe in the binding assay.
    Type: Application
    Filed: August 4, 2022
    Publication date: February 8, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Tung-Tsun Chen
  • Publication number: 20240036037
    Abstract: A fluidic cartridge module includes a casing, a biosensor package, and a fluidic channel. The casing includes a sample inlet and a buffer inlet, a biosensor package disposed in the casing and comprising a sensor array and a reference electrode. The fluidic channel is disposed over the biosensor package and connected to the sample inlet and the buffer inlet, wherein the fluidic channel includes a first opening aligned with the sensor array and a second opening aligned with the reference electrode.
    Type: Application
    Filed: July 26, 2022
    Publication date: February 1, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Hsing Hsiao, Yu-Jie Huang, Tung-Tsun Chen
  • Patent number: 11860120
    Abstract: An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: January 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tung-Tsun Chen, Yi-Hsing Hsiao, Jui-Cheng Huang, Yu-Jie Huang
  • Patent number: 11860152
    Abstract: A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: January 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Kun-Lung Chen, Tung-Tsun Chen, Cheng-Hsiang Hsieh, Yu-Jie Huang, Jui-Cheng Huang
  • Patent number: 11860121
    Abstract: An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: January 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tung-Tsun Chen, Yi-Hsing Hsiao, Jui-Cheng Huang, Yu-Jie Huang
  • Publication number: 20230384259
    Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.
    Type: Application
    Filed: August 10, 2023
    Publication date: November 30, 2023
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tung-Tsun Chen, Jui-Cheng HUANG, Kun-Lung CHEN, Cheng-Hsiang HSIEH
  • Patent number: 11828722
    Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: November 28, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ta-Chuan Liao, Chien-Kuo Yang, Yi-Shao Liu, Tung-Tsun Chen, Chan-Ching Lin, Jui-Cheng Huang, Felix Ying-Kit Tsui, Jing-Hwang Yang
  • Publication number: 20230375500
    Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 23, 2023
    Applicant: Tawian Semiconductor Manufacturing Co., Ltd.
    Inventors: Jui-Cheng Huang, Yi-Hsien Chang, Chin-Hua Wen, Chun-Ren Cheng, Shih-Fen Huang, Tung-Tsun Chen, Yu-Jie Huang, Ching-Hui Lin, Sean Cheng, Hector Chang
  • Publication number: 20230375499
    Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 23, 2023
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ta-Chuan LIAO, Chien-Kuo YANG, Yi-Shao LIU, Tung-Tsun CHEN, Chan-Ching LIN, Jui-Cheng HUANG, Felix Ying-Kit TSUI, Jing-Hwang YANG