Patents by Inventor Tung-Tsun Chen

Tung-Tsun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11002704
    Abstract: Biosensor devices and methods of forming the same are provided. A cavity is formed in a substrate and is configured to receive one or more charged molecules. A transistor is formed in the substrate and includes a source region, a drain region, and a channel region that are spatially separated from the cavity in a lateral direction. A gate of the transistor is disposed below the cavity and extends between the cavity and the source, drain, and channel regions. A voltage potential of the gate is based on a number of the charged molecules in the cavity.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: May 11, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Tung-Tsun Chen, Chien-Kuo Yang, Jui-Cheng Huang, Mark Chen, Ta-Chuan Liao, Cheng-Hsiang Hsieh
  • Publication number: 20210116413
    Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.
    Type: Application
    Filed: December 28, 2020
    Publication date: April 22, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jui-Cheng HUANG, Yi-Hsien CHANG, Chin-Hua WEN, Chun-Ren CHENG, Shih-Fen HUANG, Tung-Tsun CHEN, Yu-Jie HUANG, Ching-Hui LIN, Sean CHENG, Hector CHANG
  • Publication number: 20210109059
    Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.
    Type: Application
    Filed: November 30, 2020
    Publication date: April 15, 2021
    Applicant: Taiwan Semiconductor manufacturing Co., Ltd.
    Inventors: Tung-Tsun CHEN, Jui-Cheng Huang, Kun-Lung Chen, Cheng-Hsiang Hsieh
  • Patent number: 10876997
    Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: December 29, 2020
    Inventors: Jui-Cheng Huang, Yi-Hsien Chang, Chin-Hua Wen, Chun-Ren Cheng, Shih-Fen Huang, Tung-Tsun Chen, Yu-Jie Huang, Ching-Hui Lin, Sean Cheng, Hector Chang
  • Patent number: 10866209
    Abstract: A microfluidic system includes a semiconductor substrate having a first surface and an opposite, parallel second surface, a first bioFET sensor and a second bioFET sensor. An isolation layer is disposed on the second surface of the semiconductor substrate and has a first opening over the first bioFET sensor and a second opening over the second bioFET sensor. An interface layer is disposed in at least each of the first opening and the second opening. The system includes a readout circuit having a differential amplifier designed to measure a difference between signals associated with the first bioFET sensor and the second bioFET sensor. The system also includes a microfluidic network designed to deliver fluid to the interface layer disposed in each of the first opening and the second opening.
    Type: Grant
    Filed: December 9, 2019
    Date of Patent: December 15, 2020
    Inventors: Allen Timothy Chang, Jui-Cheng Huang, Tung-Tsun Chen, Yu-Jie Huang, Penny Hsiao
  • Patent number: 10852271
    Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: December 1, 2020
    Inventors: Tung-Tsun Chen, Jui-Cheng Huang, Kun-Lung Chen, Cheng-Hsiang Hsieh
  • Patent number: 10845450
    Abstract: A device includes a first biosensor of a biosensor array; a second biosensor of a biosensor array; a readout circuit electrically connected to the biosensor array; a decoder electrically connected to the biosensor array; a voltage generator electrically connected to the biosensor array; and a decision system electrically connected to the voltage generator and the readout circuit.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: November 24, 2020
    Inventors: Chin-Hua Wen, Jui-Cheng Huang, Yi-Shao Liu, Chun-Wen Cheng, Tung-Tsun Chen
  • Publication number: 20200348282
    Abstract: A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.
    Type: Application
    Filed: July 8, 2020
    Publication date: November 5, 2020
    Inventors: Kun-Lung Chen, Tung-Tsun Chen, Cheng-Hsiang Hsieh, Yu-Jie Huang, Jui-Cheng Huang
  • Publication number: 20200333320
    Abstract: A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.
    Type: Application
    Filed: June 11, 2020
    Publication date: October 22, 2020
    Inventors: Kun-Lung Chen, Tung-Tsun Chen, Cheng-Hsiang Hsieh, Yu-Jie Huang, Jui-Cheng Huang
  • Patent number: 10746693
    Abstract: A device includes a biosensor, a sensing circuit electrically connected to the biosensor, a quantizer electrically connected to the sensing circuit, a digital filter electrically connected to the quantizer, a selective window electrically connected to the digital filter, and a decision unit electrically connected to the selective window.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: August 18, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Jui-Cheng Huang, Yi-Shao Liu, Chun-Wen Cheng, Tung-Tsun Chen, Chin-Hua Wen
  • Patent number: 10712333
    Abstract: A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: July 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Kun-Lung Chen, Tung-Tsun Chen, Cheng-Hsiang Hsieh, Yu-Jie Huang, Jui-Cheng Huang
  • Publication number: 20200173958
    Abstract: Various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. In some embodiments, a substrate comprises a pair of first source/drain regions and a pair of second source/drain regions. Further, a first gate electrode and a second gate electrode underlie the substrate. The first gate electrode is laterally between the first source/drain regions, and the second gate electrode is laterally between the second source/drain regions. An interconnect structure underlies the substrate and defines conductive paths electrically shorting the second source/drain regions and the second gate electrode together. A passivation layer is over the substrate and defines a first well and a second well. The first and second wells respectively overlie the first and second gate electrodes, and a sensing layer lines the substrate in the first and second wells. In some embodiments, sensing probes are in the first well, but not the second well.
    Type: Application
    Filed: May 16, 2019
    Publication date: June 4, 2020
    Inventors: Katherine H. Chiang, Jui-Cheng Huang, Ke-Wei Su, Tung-Tsun Chen, Wei Lee, Pei-Wen Liu
  • Publication number: 20200116668
    Abstract: A microfluidic system includes a semiconductor substrate having a first surface and an opposite, parallel second surface, a first bioFET sensor and a second bioFET sensor. An isolation layer is disposed on the second surface of the semiconductor substrate and has a first opening over the first bioFET sensor and a second opening over the second bioFET sensor. An interface layer is disposed in at least each of the first opening and the second opening. The system includes a readout circuit having a differential amplifier designed to measure a difference between signals associated with the first bioFET sensor and the second bioFET sensor. The system also includes a microfluidic network designed to deliver fluid to the interface layer disposed in each of the first opening and the second opening.
    Type: Application
    Filed: December 9, 2019
    Publication date: April 16, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Allen Timothy CHANG, Jui-Cheng HUANG, Tung-Tsun CHEN, Yu-Jie HUANG, Penny HSIAO
  • Publication number: 20200116669
    Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.
    Type: Application
    Filed: December 16, 2019
    Publication date: April 16, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ta-Chuan LIAO, Chien-Kuo YANG, Yi-Shao LIU, Tung-Tsun CHEN, Chan-Ching LIN, Jui-Cheng HUANG, Felix Ying-Kit TSUI, Jing-Hwang YANG
  • Publication number: 20200109476
    Abstract: The present disclosure provides a method of manufacturing a gas sensor. The method includes the following operations: a substrate is received; a conductor layer is formed over the substrate; the conductor layer is patterned to form a conductor with a plurality of openings by an etching operation, the openings being arranged in a repeating pattern, a minimal dimension of the opening being about 4 micrometers; and a gas-sensing film is formed over the conductor.
    Type: Application
    Filed: December 6, 2019
    Publication date: April 9, 2020
    Inventors: MING-TA LEI, CHIA-HUA CHU, HSIN-CHIH CHIANG, TUNG-TSUN CHEN, CHUN-WEN CHENG
  • Publication number: 20200094216
    Abstract: An integrated circuit includes two or more rows of heating elements, two or more columns of heating elements, and a plurality of sensing circuits. Each sensing circuit is between two adjacent rows of the rows of heating elements and between two adjacent columns of the columns of heating elements, in a same silicon layer as the rows of heating elements and the columns of heating elements, and configured to generate a bio-sensing signal and a temperature-sensing signal.
    Type: Application
    Filed: November 15, 2019
    Publication date: March 26, 2020
    Inventors: Tung-Tsun CHEN, Yi-Shao LIU, Jui-Cheng HUANG, Chin-Hua WEN, Felix Ying-Kit TSUI, Yung-Chow PENG
  • Publication number: 20200094215
    Abstract: An integrated circuit includes two or more rows of heating elements, two or more columns of heating elements, and a plurality of sensing areas. Each sensing area is between two adjacent rows of the rows of heating elements and between two adjacent columns of the columns of heating elements and includes a bio-sensing device and a temperature-sensing device.
    Type: Application
    Filed: November 15, 2019
    Publication date: March 26, 2020
    Inventors: Tung-Tsun CHEN, Yi-Shao LIU, Jui-Cheng HUANG, Chin-Hua WEN, Felix Ying-Kit TSUI, Yung-Chow PENG
  • Publication number: 20200078761
    Abstract: An integrated circuit includes an interconnection structure, first and second sensing pixels over the interconnection structure, and an isolation layer over the first and second sensing pixels. Each of the first and second sensing pixels includes a bio-sensing device, a temperature-sensing device, one or more heating elements adjacent to the bio-sensing device and the temperature-sensing device, and a sensing film over the bio-sensing device. The isolation layer includes a first opening configured to expose the sensing film of the first sensing pixel without exposing the sensing film of the second sensing pixel and a second opening configured to expose the sensing film of the second sensing pixel without exposing the sensing film of the first sensing pixel.
    Type: Application
    Filed: November 15, 2019
    Publication date: March 12, 2020
    Inventors: Tung-Tsun CHEN, Yi-Shao LIU, Jui-Cheng HUANG, Chin-Hua WEN, Felix Ying-Kit TSUI, Yung-Chow PENG
  • Publication number: 20200078760
    Abstract: An integrated circuit includes a plurality of sensing pixels, each sensing pixel including a sensing film portion, a bio-sensing device configured to generate a first signal responsive to an electrical characteristic of the sensing film portion, a first switching device coupled between the bio-sensing device and a first signal path, a temperature-sensing device configured to generate a second signal responsive to a temperature of the sensing film portion, and a second switching device coupled between the temperature-sensing device and a second signal path.
    Type: Application
    Filed: November 15, 2019
    Publication date: March 12, 2020
    Inventors: Tung-Tsun CHEN, Yi-Shao LIU, Jui-Cheng HUANG, Chin-Hua WEN, Felix Ying-Kit TSUI, Yung-Chow PENG
  • Publication number: 20200041447
    Abstract: A sensor with a nanowire heater may be provided. The sensor may be patterned in a device layer of a Silicon on Insulation (SOI) wafer comprising a backside layer and a Buried Oxide (BOX) layer and the nanowire heater may be patterned in the device layer of the SOI wafer adjacent to the sensor. Next, metal routing may be created for the SOI wafer and a bond carrier wafer may be provided on a metal routing side of the SOI wafer. The backside layer may then be ground until the BOX layer is exposed. Then the device layer may be patterned through the BOX layer to expose the sensor and the nanowire heater. A dielectric may be deposited covering at least one of the following: the sensor; and the nanowire heater.
    Type: Application
    Filed: July 29, 2019
    Publication date: February 6, 2020
    Inventors: Allen Timothy Chang, Tung-Tsun Chen, Jui-Cheng Huang, Yu-Jie Huang, Yi-Hsing Hsiao