Abstract: A microfluidic system includes a semiconductor substrate having a first surface and an opposite, parallel second surface, a first bioFET sensor and a second bioFET sensor. An isolation layer is disposed on the second surface of the semiconductor substrate and has a first opening over the first bioFET sensor and a second opening over the second bioFET sensor. An interface layer is disposed in at least each of the first opening and the second opening. The system includes a readout circuit having a differential amplifier designed to measure a difference between signals associated with the first bioFET sensor and the second bioFET sensor. The system also includes a microfluidic network designed to deliver fluid to the interface layer disposed in each of the first opening and the second opening.

Abstract: A microfluidic system includes a semiconductor substrate having a first surface and an opposite, parallel second surface, a first bioFET sensor and a second bioFET sensor. An isolation layer is disposed on the second surface of the semiconductor substrate and has a first opening over the first bioFET sensor and a second opening over the second bioFET sensor. An interface layer is disposed in at least each of the first opening and the second opening. The system includes a readout circuit having a differential amplifier designed to measure a difference between signals associated with the first bioFET sensor and the second bioFET sensor. The system also includes a microfluidic network designed to deliver fluid to the interface layer disposed in each of the first opening and the second opening.

Abstract: An integrated circuit includes two or more rows of heating elements, two or more columns of heating elements, and a plurality of sensing areas. Each sensing area is between two adjacent rows of the rows of heating elements, between two adjacent columns of the columns of heating elements, and includes a bio-sensing device and a temperature-sensing device.

Abstract: A method of manufacturing an integrated circuit device includes providing a substrate comprising a semiconductor active layer, and forming source/drain regions, temperature sensors, and heating elements either in the semiconductor active layer or on the front side of the semiconductor active layer. The semiconductor active layer has channel regions between adjacent source/drain regions, and each of the heating elements is aligned over at least a portion of a corresponding temperature sensor. The method also includes forming a metal interconnect structure over the front side of the semiconductor active layer and exposing the channel regions from the back side of the semiconductor active layer substrate. A fluid gate dielectric layer is formed over the exposed channel regions.

Abstract: A method of manufacturing an integrated circuit device includes providing a substrate comprising a semiconductor active layer, and forming source/drain regions, temperature sensors, and heating elements either in the semiconductor active layer or on the front side of the semiconductor active layer. The semiconductor active layer has channel regions between adjacent source/drain regions, and each of the heating elements is aligned over at least a portion of a corresponding temperature sensor. The method also includes forming a metal interconnect structure over the front side of the semiconductor active layer and exposing the channel regions from the back side of the semiconductor active layer substrate. A fluid gate dielectric layer is formed over the exposed channel regions.

Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

Abstract: A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.

Abstract: A device layer of an integrated circuit device includes a semiconductor active layer spanning a plurality of device regions. Each of the device regions has a heating element, a temperature sensor, and bioFETs in the device layer. The bioFETs have source/drain regions and channel regions in the semiconductor active layer and fluid gates exposed on a surface for fluid interfacing on one side of the device layer. A multilayer metal interconnect structure is disposed on the opposite side of the device layer. This structure places the heating elements in proximity to the fluid gates enabling localized heating, precision heating, and multiplexed temperature control for multiplexed bio-sensing applications.

Abstract: A micro-electro mechanical system (MEMS) humidity sensor includes a first substrate, a second substrate and a sensing structure. The second substrate is substantially parallel to the first substrate. The sensing structure is between the first substrate and the second substrate, and bonded to a portion of the first substrate and a portion of the second substrate, in which the second substrate includes a conductive layer facing the sensing structure, and a first space between the first substrate and the sensing structure is communicated with or isolated from outside, and a second space between the conductive layer and the sensing structure is communicated with an atmosphere, and the sensing structure, the second space and the conductive layer constitute a capacitor configured to measure permittivity of the atmosphere, and humidity of the atmosphere is derived from the permittivity of the atmosphere, pressure of the atmosphere and temperature.

Abstract: A fluidic cartridge and methods of operation are described. The fluidic cartridge includes a substrate having a plurality of contact pads designed to electrically couple with an analyzer, a semiconductor chip having a sensor array, and a reference electrode. The fluidic cartridge includes a first fluidic channel having an inlet and coupled to a second fluidic channel, the second fluidic channel being aligned such that the sensor array and the reference electrode are disposed within the second fluidic channel. A first plug is disposed at the first inlet. The first plug includes a compliant material configured to be punctured by a capillary without leaking fluid through the first plug.

Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.

Abstract: An integrated circuit includes two or more rows of heating elements, two or more columns of heating elements, and a plurality of sensing areas. Each sensing area is between two adjacent rows of the rows of heating elements, between two adjacent columns of the columns of heating elements, and includes a bio-sensing device and a temperature-sensing device.

Abstract: Biosensor devices and methods of forming the same are provided. A cavity is formed in a substrate and is configured to receive one or more charged molecules. A transistor is formed in the substrate and includes a source region, a drain region, and a channel region that are spatially separated from the cavity in a lateral direction. A gate of the transistor is disposed below the cavity and extends between the cavity and the source, drain, and channel regions. A voltage potential of the gate is based on a number of the charged molecules in the cavity.

Abstract: An integrated circuit includes a plurality of sensing pixels. Each sensing pixel of the plurality of sensing pixels includes a sensing film portion, a potential-sensing device configured to generate a first signal responsive to an electrical characteristic of the sensing film portion, a temperature-sensing device configured to generate a second signal responsive to a temperature of the sensing film portion, and one or more heating elements configured to adjust the temperature of the sensing film portion.

Abstract: A device includes a first biosensor of a biosensor array; a second biosensor of a biosensor array; a readout circuit electrically connected to the biosensor array; a decoder electrically connected to the biosensor array; a voltage generator electrically connected to the biosensor array; and a decision system electrically connected to the voltage generator and the readout circuit.

Abstract: A biosensor with a heater embedded therein is provided. A semiconductor substrate comprises a source region and a drain region. The heater is under the semiconductor substrate. A sensing well is over the semiconductor substrate, laterally between the source region and the drain region. A sensing layer lines the sensing well. A method for manufacturing the biosensor is also provided.

Abstract: A device includes a biosensor, a sensing circuit electrically connected to the biosensor, a quantizer electrically connected to the sensing circuit, a digital filter electrically connected to the quantizer, a selective window electrically connected to the digital filter, and a decision unit electrically connected to the selective window.

Abstract: Structures, apparatuses, and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first substrate, a first device layer, a second device layer and a third device layer. The first device layer may be on the first substrate and include a switch. The second device layer may be on the first device layer and include a sensing device. The third device layer may include one or more inter-level connection structures configured to electrically connect the switch to the sensing device. The switch may be configured to be electrically turned on in response to a selection signal. The sensing device may be configured to generate an output signal in response to the switch being turned on.

Abstract: A device includes a first biosensor of a biosensor array; a second biosensor of a biosensor array; a readout circuit electrically connected to the biosensor array; a decoder electrically connected to the biosensor array; a voltage generator electrically connected to the biosensor array; and a decision system electrically connected to the voltage generator and the readout circuit.

Abstract: A micro-electro mechanical system (MEMS) humidity sensor includes a first substrate, a second substrate and a sensing structure. The second substrate is substantially parallel to the first substrate. The sensing structure is between the first substrate and the second substrate, and bonded to a portion of the first substrate and a portion of the second substrate, in which the second substrate includes a conductive layer facing the sensing structure, and a first space between the first substrate and the sensing structure is communicated with or isolated from outside, and a second space between the conductive layer and the sensing structure is communicated with an atmosphere, and the sensing structure, the second space and the conductive layer constitute a capacitor configured to measure permittivity of the atmosphere, and humidity of the atmosphere is derived from the permittivity of the atmosphere, pressure of the atmosphere and temperature.