Abstract: A device layer of an integrated circuit device includes a semiconductor active layer spanning a plurality of device regions. Each of the device regions has a heating element, a temperature sensor, and bioFETs in the device layer. The bioFETs have source/drain regions and channel regions in the semiconductor active layer and fluid gates exposed on a surface for fluid interfacing on one side of the device layer. A multilayer metal interconnect structure is disposed on the opposite side of the device layer. This structure places the heating elements in proximity to the fluid gates enabling localized heating, precision heating, and multiplexed temperature control for multiplexed bio-sensing applications.

Abstract: A micro-electro mechanical system (MEMS) pressure sensor includes a first substrate, a second substrate and a sensing structure. The second substrate is substantially parallel to the first substrate. The sensing structure is between the first substrate and the second substrate, and bonded to a portion of the first substrate and a portion of the second substrate, in which a first space between the first substrate and the sensing structure is communicated with outside, and a second space between the second substrate and the sensing structure is communicated with or isolated from the outside.

Abstract: A device layer of an integrated circuit device includes a semiconductor active layer spanning a plurality of device regions. Each of the device regions has a heating element, a temperature sensor, and bioFETs in the device layer. The bioFETs have source/drain regions and channel regions in the semiconductor active layer and fluid gates exposed on a surface for fluid interfacing on one side of the device layer. A multilayer metal interconnect structure is disposed on the opposite side of the device layer. This structure places the heating elements in proximity to the fluid gates enabling localized heating, precision heating, and multiplexed temperature control for multiplexed bio-sensing applications.

Abstract: A device includes a biosensor, a sensing circuit electrically connected to the biosensor, a quantizer electrically connected to the sensing circuit, a digital filter electrically connected to the quantizer, a selective window electrically connected to the digital filter, and a decision unit electrically connected to the selective window.

Abstract: A micro-electro mechanical system (MEMS) pressure sensor includes a first substrate, a second substrate and a sensing structure. The second substrate is substantially parallel to the first substrate. The sensing structure is between the first substrate and the second substrate, and bonded to a portion of the first substrate and a portion of the second substrate, in which a first space between the first substrate and the sensing structure is communicated with outside, and a second space between the second substrate and the sensing structure is communicated with or isolated from the outside.

Abstract: Some embodiments of the present disclosure provide a gas sensor in an IOT. The gas sensor includes a substrate, a conductor disposed above the substrate, and a sensing film disposed over the conductor. The conductor has a top-view pattern including a plurality of openings, a minimal dimension of the opening being less than about 4 micrometer; and a perimeter enclosing the opening. Some embodiments of the present disclosure provide a method of manufacturing a gas sensor. The method includes receiving a substrate; forming a conductor, over the substrate; patterning the conductor to form a plurality of openings in the conductor by an etching operation, and forming a gas-sensing film over the conductor. The openings are arranged in a repeating pattern, and a minimal dimension of the opening being about 4 micrometer.

Abstract: A device layer of an integrated circuit device includes a semiconductor active layer spanning a plurality of device regions. Each of the device regions has a heating element, a temperature sensor, and bioFETs in the device layer. The bioFETs have source/drain regions and channel regions in the semiconductor active layer and fluid gates exposed on a surface for fluid interfacing on one side of the device layer. A multilayer metal interconnect structure is disposed on the opposite side of the device layer. This structure places the heating elements in proximity to the fluid gates enabling localized heating, precision heating, and multiplexed temperature control for multiplexed bio-sensing applications.

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

Abstract: One or more circuit arrangements for a biosensor are provided. A circuit arrangement includes an ion sensitive sensor, a differentiator electrically connected to the ion sensitive sensor, an AC signal level comparator electrically connected to the differentiator and a decision circuit electrically connected to the AC signal level comparator. In some embodiments, the AC signal level comparator includes at least one of a first comparator or a second comparator. A method of detecting a bio-reaction is also provided.

Abstract: The present disclosure provides a device, such as a FET sensing cell, which includes a first dielectric layer over a substrate, an active layer over the first dielectric layer, a source region in the active layer, a drain region in the active layer, a channel region in the active layer situated between the source region and the drain region, a sensing film over the channel region, a second dielectric layer over the active layer, wherein an opening is formed in the second dielectric layer and the sensing film is located within the opening, a first electrode located within the second dielectric layer and a fluidic gate region located over the second dielectric layer and extending into the opening. The present disclosure also provides a method for improving the sensitivity of a device by adjusting a sensing value.

Abstract: A system and method for modeling microelectromechanical devices is disclosed. An embodiment includes separating the microelectromechanical design into separate regions and modeling the separate regions separately. Parametric parameters or parametric equations may be utilized in the separate models. The separate models may be integrated into a MEMS device model. The MEMS device model may be tested and calibrated, and then may be used to model new designs for microelectromechanical devices.

Abstract: One or more semiconductor devices and array arrangements and methods of formation are provided. A semiconductor device includes an ion sensing device and a heating element proximate the ion sensing device. The ion sensing device has an active region, including a source, a drain, and a channel, the channel situated between the source and the drain. The ion sensing device also has an ion sensing film situated over the channel, and an ion sensing region over the ion sensing film. Responsive to a temperature sensed by a thermal sensor proximate the ion sensing device, the heating element is selectively activated to alter a temperature of the ion sensing region to promote desired operation of the semiconductor device, such as to function as a bio sensor. Multiple semiconductor devices can be formed into an array.

Abstract: An integrated circuit includes a plurality of sensing pixels. Each sensing pixel of the plurality of sensing pixels includes a sensing film portion, a potential-sensing device configured to generate a first signal responsive to an electrical characteristic of the sensing film portion, a temperature-sensing device configured to generate a second signal responsive to a temperature of the sensing film portion, and one or more heating elements configured to adjust the temperature of the sensing film portion.

Abstract: A system and method for modeling microelectromechanical devices is disclosed. An embodiment includes separating the microelectromechanical design into separate regions and modeling the separate regions separately. Parametric parameters or parametric equations may be utilized in the separate models. The separate models may be integrated into a MEMS device model. The MEMS device model may be tested and calibrated, and then may be used to model new designs for microelectromechanical devices.

Abstract: One or more circuit arrangements for a biosensor are provided. A circuit arrangement includes an ion sensitive sensor, a differentiator electrically connected to the ion sensitive sensor, an AC signal level comparator electrically connected to the differentiator and a decision circuit electrically connected to the AC signal level comparator. In some embodiments, the AC signal level comparator includes at least one of a first comparator or a second comparator. A method of detecting a bio-reaction is also provided.

Abstract: A system and method for modeling microelectromechanical devices is disclosed. An embodiment includes separating the microelectromechanical design into separate regions and modeling the separate regions separately. Parametric parameters or parametric equations may be utilized in the separate models. The separate models may be integrated into a MEMS device model. The MEMS device model may be tested and calibrated, and then may be used to model new designs for microelectromechanical devices.

Abstract: A device includes a first biosensor of a biosensor array; a second biosensor of a biosensor array; a readout circuit electrically connected to the biosensor array; a decoder electrically connected to the biosensor array; a voltage generator electrically connected to the biosensor array; and a decision system electrically connected to the voltage generator and the readout circuit.

Abstract: A device includes a biosensor, a sensing circuit electrically connected to the biosensor, a quantizer electrically connected to the sensing circuit, a digital filter electrically connected to the quantizer, a selective window electrically connected to the digital filter, and a decision unit electrically connected to the selective window.

Abstract: One or more semiconductor devices and array arrangements and methods of formation are provided. A semiconductor device includes an ion sensing device and a heating element proximate the ion sensing device. The ion sensing device has an active region, including a source, a drain, and a channel, the channel situated between the source and the drain. The ion sensing device also has an ion sensing film situated over the channel, and an ion sensing region over the ion sensing film. Responsive to a temperature sensed by a thermal sensor proximate the ion sensing device, the heating element is selectively activated to alter a temperature of the ion sensing region to promote desired operation of the semiconductor device, such as to function as a bio sensor. Multiple semiconductor devices can be formed into an array.

Abstract: The present disclosure provides a device, such as a FET sensing cell, which includes a first dielectric layer over a substrate, an active layer over the first dielectric layer, a source region in the active layer, a drain region in the active layer, a channel region in the active layer situated between the source region and the drain region, a sensing film over the channel region, a second dielectric layer over the active layer, wherein an opening is formed in the second dielectric layer and the sensing film is located within the opening, a first electrode located within the second dielectric layer and a fluidic gate region located over the second dielectric layer and extending into the opening. The present disclosure also provides a method for improving the sensitivity of a device by adjusting a sensing value.