Abstract: A cooling module for a heterogeneous integrated semiconductor package structure is disclosed. The heterogeneous integrated semiconductor package structure is arranged on a circuit board. The cooling module includes a cooling plate and a plurality of nanowires. The nanowires may be configured to be bonded to the cooling plate, or may be configured to bond the cooling plate to the heterogeneous integrated semiconductor package structure, or may be configured to bond the cooling plate to the circuit board, or may be configured to bond the cooling plate to both the heterogeneous integrated semiconductor package structure and the circuit board.

Abstract: A cell modification system includes a separation module, a modification module, a culture module and a filter module. The separation module is configured to receive a blood sample, separate cells and plasma from the blood sample, and then separate target cells. The modification module is configured to receive the target cells and introduce a modification composite material into the target cells to convert the target cells into modified cells. The culture module is configured to receive and store the modified cells, and monitor a cell proliferation environment to facilitate the activation and proliferation of the modified cells. The filter module is configured to receive the modified cells after proliferating, determine whether the modified cells have been modified successfully, and output the cells that have been modified successfully as a therapeutic product. A cell modification device is also disclosed.

Abstract: An over-current protection device includes an electrode layer and a heat-sensitive layer. The heat-sensitive layer includes a polymer matrix and a conductive filler. The polymer matrix includes a polyolefin-based polymer and an olefin-acrylate copolymer. The polyolefin-based polymer is represented by a formula (I): ?wherein R1 and R2 are selected from the group consisting of CH3, C2H5, and C3H7. The olefin-acrylate copolymer is represented by a formula (II): ?wherein R is selected from the group consisting of COOCH3, COOC2H5, and COOC4H9.

Abstract: A signal sensing device includes a signal amplifying structure to amplify the strength of the measured signal. The signal sensing device includes a body, a signal sensing element, and a signal amplifying portion. The signal sensing element is disposed in the body and includes a signal transmission section and a signal sensing section in electrical connection with the signal transmission section. The signal amplifying portion includes a plurality of protruding structures protruding outward from the body. Each of the plurality of protruding structures is cylindrical and has a diameter of 250-400 ?m and a height of 40-75 ?m. When a portion of the body forms a surrounding portion surrounding a to-be-sensed target, a portion or an entirety of the signal sensing section is located on the surrounding portion, and the signal amplifying portion is partially or entirely in contact with the to-be-sensed target.

Abstract: Systems and methods for identifying consumer electronic products using a playback device with a product identifier in accordance with embodiments of the invention are disclosed. In one embodiment, a playback device includes a processor and memory configured to store a product identifier, where the product identifier is associated with a specific product and is associated with cryptographic information, wherein the processor is configured by a client application to request content from a server, communicate the product identifier to a server, and receive encrypted content accessible using cryptographic information including the cryptographic information associated with the product identifier.

Abstract: The present disclosure is directed to a high-voltage magnetron sputtering tool with an enhanced power source including a vacuum chamber containing a magnetron cathode with a magnet array, a target, and an anode, as well as the enhanced power source that includes high-power DC power source and controller that produces a pulsed output. In an aspect, the enhanced power source may include a standard power source that is retrofitted a supplemental high-power DC power source and controller, and alternatively, a high-power DC power source and controller that replaces the standard power source. In addition, the present disclosure is directed to methods for depositing a hydrogen-free diamond-like carbon film on a semiconductor substrate using the high-voltage magnetron sputtering tool. In an aspect, the hydrogen-free diamond-like carbon film may be an etch mask having a sp3 carbon bonding that is greater than 60 percent.

Abstract: A semiconductor device includes a channel structure, source region, a drain region, metal gate structure, and a self-assembled layer. The source region and the drain region are on opposite sides of the channel structure. A bottom surface of the source region is lower than a bottom surface of the channel structure, and a top surface of the source region is higher than a top surface of the channel structure. The metal gate structure covers the channel structure and between the source region and the drain region. The self-assembled layer is between the source region and the metal gate structure. The self-assembled layer is in contact with the bottom surface of the channel structure but spaced apart from the top surface of the channel structure.

Abstract: A gas shield protection device for thermal spraying includes a spraying member and a gas shield generation device. The spraying member includes a nozzle and a shield body disposed on the nozzle. The nozzle is configured to align with one of a plurality of workpieces on a worktable. The gas shield generation device is configured to align with the worktable and includes a housing and a second gas ejection portion. The housing has a gas passageway therein. The second gas ejection portion has at least one gas ejection port intercommunicating with the gas passageway. The at least one gas ejection port is configured to face the plurality of workpieces, such that an area of a gas shield ejected from the at least one gas ejection port of the second gas ejection portion covers the plurality of workpieces. Thus, oxidation of the coating on the workpiece can be avoided.

Abstract: A lock device includes a lock seat, a lock cylinder, an actuating plate, an extension plate, a guide plate, and hooks. The lock seat is fixed to a window panel. The lock cylinder is connected to the lock seat. The actuating plate extends from the lock cylinder. The extension plate is connected to the window panel. The guide plate extends from the extension plate over the actuating plate. The hooks are connected to the extension plate and engageable with engagement slots of a main housing. Each hook has an inclined guide surface. When the lock cylinder rotates, the actuating plate moves the guide plate and the hooks so that the hooks are disengaged from the engagement slots to unlock the window panel. The inclined guide surface is slidable to the main housing to move the extension plate when the window panel is to be locked.

Abstract: The present disclosure relates to the technical field of medicaments. Particularly, the present disclosure provides a pharmaceutical combination/composition comprising a phosphodiesterase type 5 (PDE5) inhibitor, arginine, and N-acetylcysteine and its applications in treating cardiovascular diseases and erectile dysfunction.

Abstract: A driving circuit for driving a light source and a projection device are provided. The driving circuit includes a power converter, a detection circuit, and a control circuit. The power converter provides a driving power to the light source. The detection circuit provides a feedback signal according to a current value of the light source. The control circuit receives an operation command and the feedback signal. The control circuit determines whether the driving circuit enters a light-load state according to at least one of the operation command and the feedback signal. When the driving circuit is determined to enter the light-load state, the control circuit controls the power converter to decrease a current value of the driving power and controls the power converter to increase a switching frequency of the driving power. The driving circuit and the projection device may prevent the light source from flickering under the light-load state.

Abstract: Embodiments provide systems, methods, and computer storage media for a Nonsymmetric Determinantal Point Process (NDPPs) for compatible set recommendations in a setting where data representing entities (e.g., items) arrives in a stream. A stream representing compatible sets of entities is received and used to update a latent representation of the entities and a compatibility distribution indicating likelihood of compatibility of subsets of the entities. The probability distribution is accessed in a single sequential pass to predict a compatible complete set of entities that completes an incomplete set of entities. The predicted complete compatible set is provided a recommendation for entities that complete the incomplete set of entities.

Abstract: A method, computer program product, and computer system for analyzing, by a computing device, a plurality of facial images to determine a plurality of demographic labels associated with each facial image of the plurality of facial images. A model may be trained based upon, at least in part, the plurality of demographic labels associated with each facial image of the plurality of facial images. An input of at least a portion of the plurality of demographic labels may be received. An artificially generated facial image may be provided for display that is generated based upon, at least in part, the model and the input.

Abstract: A semiconductor structure includes a substrate having a first well of a first conductivity type and a second well of a second conductivity type. From a top view, the first well includes first and seconds edges extending along a first direction. The second edge has multiple turns, resulting in the first well having a protruding section and a recessed section. The semiconductor structure further includes a first source/drain feature over the protruding section and a second source/drain feature over a main body of the first well. The first source/drain feature is of the first conductivity type. The second source/drain feature is of the second conductivity type. The first and the second source/drain features are generally aligned along a second direction perpendicular to the first direction from the top view.

Abstract: A copper foil structure and a manufacturing method thereof are provided. In some embodiments, the copper foil structure includes a copper foil layer and a conductive organic anti-oxidation layer. The conductive organic anti-oxidation layer is disposed on the copper foil layer, and the conductive organic anti-oxidation layer includes an organic antioxidant and a conductive polymer.

Abstract: An overhead transport system is provided capable of absorbing abnormal vibration and determining a source of the abnormal vibration. The overhead transport system in accordance with various embodiments of the present disclosure includes a processor, an overhead rail, a plurality of hangers that support the overhead rail, a vibration meter measuring vibration from the overhead rail, and a damper included in each of the hangers. The processor is configured to change a property of the damper in response to a determination that the measured vibration by the vibration meter is indicative of an abnormal vibration.

Abstract: Provided are a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first metal layer, a second metal layer and a dielectric layer. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The first metal layer is disposed in the second nitride semiconductor layer. The second metal layer is disposed on the second nitride semiconductor layer. The dielectric layer is disposed between the first metal layer and the second nitride semiconductor layer and/or between the second metal layer and the second nitride semiconductor layer.

Abstract: An IC includes a first standard cell (SC1) having a first circuit area (CA1) and a first transition area (TA1) placed on an edge of the CA1; and a SC2 having a CA2 and a TA2 placed on an edge of CA2?. CA1 includes a first and a second active region (AR1 and AR2) longitudinally oriented along a first direction (D1), and a first gate stack (G1) along a D2?D1 and extending over AR1 and AR2. G1 includes a first gate segment (GS1) contacting AR1 and a GS2 contacting AR2. GS1 and GS2 are different in composition. GS1 and GS2 are associated with a pFET and a nFET, respectively. TA1 includes a G2 longitudinally oriented along D2 and spans between opposite cell edges of the SC1. G2 is a lengthwise uniform gate stack. SC2 is placed in abutment with the SC1 such that TA1 and TA2 share a common edge.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a fin structure over a substrate. The fin structure can include a channel layer and a sacrificial layer. The method can further include forming a first recess structure in a first portion of the fin structure, forming a second recess structure in the sacrificial layer of a second portion of the fin structure, forming a dielectric layer in the first and second recess structures, and performing an oxygen-free cyclic etching process to etch the dielectric layer to expose the channel layer of the second portion of the fin structure. The oxygen-free cyclic etching process can include two etching processes to selectively etch the dielectric layer over the channel layer.