Abstract: A liquid cooling vapor chamber heat dissipation module includes a liquid cooling cover, a metallic top cover, and a metallic bottom cover. The liquid cooling cover includes a top portion, a sidewall and an accommodating space. The sidewall includes a liquid inlet and a liquid outlet. The outer heat-dissipating surface of the top cover has a plurality of columnar heat-dissipating structures. The inner evaporation surface of the metallic bottom cover has parallel bottom grooves and protrusive supporting structures disposed between the bottom grooves. An integrated vapor chamber is formed by engaging the metallic top and bottom covers. The liquid cooling cover engages with the outer heat-dissipating surface of the metallic top cover with the columnar heat-dissipating structures accommodating within the accommodating space, which allows cooling liquid to enter the accommodating space from the liquid inlet and flow through the columnar heat-dissipating structures, and flow out from the liquid outlet.

Abstract: An integrated heat dissipation module structure includes a metallic top cover, a metallic bottom cover, a working space, capillary structures and a working fluid in the working space. The top cover includes oppositely an outer heat-dissipating surface having a plurality of columnar heat dissipation structures protruding therefrom and an inner condensation surface surrounded by a top frame. The inner condensation surface has parallel top grooves. The bottom cover includes oppositely an outer heat-absorption surface having screw holes for locking electronic elements and an inner evaporation surface surrounded by a bottom frame. The inner evaporation surface has parallel bottom grooves, protrusive supporting structures disposed between the bottom grooves, and screw-hole protrusions corresponding to the screw holes. The capillary structures are disposed within the bottom grooves or both the bottom and top grooves. The working fluid is in the working space and the capillary structures.

Abstract: An integrated vapor chamber includes a metallic top cover, a metallic bottom cover, a working space, capillary structures and a working fluid in the working space. The top cover includes oppositely an outer heat-dissipating surface and an inner condensation surface surrounded by a top frame. The inner condensation surface has parallel top grooves and protrusive supporting structures. The bottom cover includes oppositely an outer heat-absorption surface having recessed spaces for accommodating electronic elements and an inner evaporation surface surrounded by a bottom frame. The inner evaporation surface has parallel bottom grooves. The working space is an airtight space formed by engaging the top frame and the bottom frame with the inner condensation surface to face the inner evaporation surface, the top grooves to overlap individually the bottom grooves, the supporting structures to contact individually at the inner evaporation surface among the bottom grooves.

Abstract: An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a substrate of the interposer. The test structure is intermediate and electrically coupled to at least two probe pads.

Abstract: An analytical system includes a laser disposed to direct light toward a microfluidic feature disposed in a feature layer of a multiple layer test cartridge, a sensor to receive reflections from capping layers disposed about the microfluidic feature in the feature layer, and a controller to determine a depth of the microfluidic feature as a function of the received reflections.

Abstract: An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a substrate of the interposer. The test structure is intermediate and electrically coupled to at least two probe pads.

Abstract: An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a substrate of the interposer. The test structure is intermediate and electrically coupled to at least two probe pads.

Abstract: An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a substrate of the interposer. The test structure is intermediate and electrically coupled to at least two probe pads.

Abstract: An analytical system includes a laser disposed to direct light toward a microfluidic feature disposed in a feature layer of a multiple layer test cartridge, a sensor to receive reflections from capping layers disposed about the microfluidic feature in the feature layer, and a controller to determine a depth of the microfluidic feature as a function of the received reflections.

Abstract: An analytical system includes a laser disposed to direct light toward a microfluidic feature disposed in a feature layer of a multiple layer test cartridge, a sensor to receive reflections from capping layers disposed about the microfluidic feature in the feature layer, and a controller to determine a depth of the microfluidic feature as a function of the received reflections.

Abstract: An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a substrate of the interposer. The test structure is intermediate and electrically coupled to at least two probe pads.

Abstract: A first embodiment is a method for semiconductor process control comprising clustering processing tools of a processing stage into a tool cluster based on processing data and forming a prediction model for processing a semiconductor wafer based on the tool cluster. A second embodiment is a method for semiconductor process control comprising providing cluster routes between first stage tool clusters and second stage tool clusters, assigning a comparative optimization ranking to each cluster route, and scheduling processing of wafers. The comparative optimization ranking identifies comparatively which cluster routes provide for high wafer processing uniformity.

Abstract: A bump structure for electrically coupling semiconductor components is provided. The bump structure includes a first bump on a first semiconductor component and a second bump on a second semiconductor component. The first bump has a first non-flat portion (e.g., a convex projection) and the second bump has a second non-flat portion (e.g., a concave recess). The bump structure also includes a solder joint formed between the first and second non-flat portions to electrically couple the semiconductor components.

Abstract: Semiconductor device design methods and conductive bump pattern enhancement methods are disclosed. In some embodiments, a method of designing a semiconductor device includes designing a conductive bump pattern design, and implementing a conductive bump pattern enhancement algorithm on the conductive bump pattern design to create an enhanced conductive bump pattern design. A routing pattern is designed based on the enhanced conductive bump pattern design. A design rule checking (DRC) procedure is performed on the routing pattern.

Abstract: A device includes a substrate having a front surface and a back surface opposite the front surface. A capacitor is formed in the substrate and includes a first capacitor plate; a first insulation layer encircling the first capacitor plate; and a second capacitor plate encircling the first insulation layer. Each of the first capacitor plate, the first insulation layer, and the second capacitor plate extends from the front surface to the back surface of the substrate.

Abstract: An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a substrate of the interposer. The test structure is intermediate and electrically coupled to at least two probe pads.

Abstract: A bump structure for electrically coupling semiconductor components is provided. The bump structure includes a first bump on a first semiconductor component and a second bump on a second semiconductor component. The first bump has a first non-flat portion (e.g., a convex projection) and the second bump has a second non-flat portion (e.g., a concave recess). The bump structure also includes a solder joint formed between the first and second non-flat portions to electrically couple the semiconductor components.

Abstract: Embodiments of the present invention relate to a method for a near non-adaptive virtual metrology for wafer processing control. In accordance with an embodiment of the present invention, a method for processing control comprises diagnosing a chamber of a processing tool that processes a wafer to identify a key chamber parameter, and controlling the chamber based on the key chamber parameter if the key chamber parameter can be controlled, or compensating a prediction model by changing to a secondary prediction model if the key chamber parameter cannot be sufficiently controlled.

Abstract: An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a substrate of the interposer. The test structure is intermediate and electrically coupled to at least two probe pads.

Abstract: A bump structure for electrically coupling semiconductor components is provided. The bump structure includes a first bump on a first semiconductor component and a second bump on a second semiconductor component. The first bump has a first non-flat portion (e.g., a convex projection) and the second bump has a second non-flat portion (e.g., a concave recess). The bump structure also includes a solder joint formed between the first and second non-flat portions to electrically couple the semiconductor components.