Abstract: A spectroscopic system having a coded aperture as a gating device. Light of a Raman scattering may enter the system and encounter a mask gate. The mask may have a matrix of micro mirrors some of which pass light on to a diffraction grating when the gate is on. Some of the mirrors will not pass on light thereby resulting in coded light to the grating. If the gate is off, then no light is passed on to the grating. The grating may pass the coded and spectrally spread light on to a detector array. The array signals representing the light on the array may go to a processor so one can obtain information about the target that emanated the Raman scatter when impinged by a light beam.

Abstract: A valve is provided that can selectively change the size of a flow channel in a valve in order to modulate the fluid flow through the valve. In one illustrative embodiment, the valve includes a housing that defines a cavity, with an inlet and an outlet extending into the cavity. A diaphragm is positioned in the cavity, where at least part of the diaphragm defines at least part of the fluid path. One or more electrodes are fixed relative to the diaphragm, and one or more electrodes are fixed relative to the housing such that the diaphragm can be electrostatically actuated to modulate the fluid flow through the valve.

Abstract: A long wavelength vertical cavity surface emitting laser having a substrate, a first mirror situated on the substrate, an active region situated on the first mirror, a second mirror situated on the active region. The first mirror may have several pairs of layers with an oxidized layer in one or more pairs of that mirror. The substrate may include InP and the mirror components may be compatible with the InP. The one or more layers in the first mirror may be oxidized via a trench-like approach or other arrangement.

Abstract: A valve is provided that can selectively change the size of a flow channel in a valve in order to modulate the fluid flow through the valve. In one illustrative embodiment, the valve includes a housing that defines a cavity, with an inlet and an outlet extending into the cavity. A diaphragm is positioned in the cavity, where at least part of the diaphragm defines at least part of the fluid path. One or more electrodes are fixed relative to the diaphragm, and one or more electrodes are fixed relative to the housing such that the diaphragm can be electrostatically actuated to modulate the fluid flow through the valve.

Abstract: A pressure sensor having a predetermined chamber dome angle with an electrode. A hole is located in the top to provide pressure readings and the bottom has an input port. A primary diaphragm is coated on both sides with an electrode and an insulator. A secondary diaphragm is coated on the side which faces the primary diaphragm. Offset holes are made in the two diaphragms which permits pressure equalization during self calibration. Both diaphragms are initially energized to seal the gage volume, and then the secondary diaphragm is used to self calibrate using a known pressure.

Abstract: A valve is provided that can selectively change the size of a flow channel in a valve in order to modulate the fluid flow through the valve. In one illustrative embodiment, the valve includes a housing that defines a cavity, with an inlet and an outlet extending into the cavity. A diaphragm is positioned in the cavity, where at least part of the diaphragm defines at least part of the fluid path. One or more electrodes are fixed relative to the diaphragm, and one or more electrodes are fixed relative to the housing such that the diaphragm can be electrostatically actuated to modulate the fluid flow through the valve.

Abstract: The present invention relates to electrostatically actuated device components and methods of making the same. In an embodiment, the invention includes a method of making an electrostatically actuated device component including providing a multilayered structure comprising a first layer comprising a first polymer, a second layer comprising a conductive material, the second layer disposed over the first layer, a third layer comprising a dielectric material, the third layer disposed over the second layer, positioning the multilayered structure within an injection mold, and injecting a second polymer into the mold and bonding the first layer to the second polymer to produce an electrostatically actuated device component. In an embodiment, the invention includes a method of injection molding a stator component for an electrostatically actuated valve.

Abstract: A vertical cavity surface emitting laser (VCSEL) structure includes a bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal layer interposed between the bottom DBR and the substrate, wherein the metal layer and bottom DBR form a composite mirror structure. A patterned dielectric layer may be interposed between the metal layer and the bottom DBR to reduce a deleterious chemical reaction between the metal layer and the bottom DBR. The metal layer directly contacts a portion of the bottom DBR to enhance the electrical and thermal conductivity of the VCSEL structure.

Abstract: An electrostatic actuator includes a body having a chamber therein, a first electrode secured to the chamber, and a diaphragm mounted to the body. The diaphragm includes a mounting surface portion secured to the body, and a dynamic surface portion for movement within the chamber. The electrostatic actuator also includes a second electrode secured relative to the diaphragm. In some embodiments, the first electrode includes a void therein. In other embodiments, the second electrode includes a void therein. In still other embodiments, both the first and the second electrode include voids therein.

Abstract: A method of forming an electronic part having a circuit pattern, by forming a cavity mold having trench lines in the cavity mold with a first area perpendicular to an axis and a second area having a negative slope with respect to the axis. The part is molded and removed, and a conductive material is deposited to form conductive and nonconductive areas thereon. The preferred deposit step is by blanket metallization which coats all surfaces except the sides of the trench lines and the second area of the part. The method may include the additional step of molding vertical flash portions on the part instead of or in addition to the trench lines that are removed after the conductive material is deposited thereon to form the circuit pattern.

Abstract: A gas valve body with a first flow chamber and, a second flow chamber including and a main valve positioned in line and between the first flow chamber and the second flow chamber. The main valve can be opened by creating a pressure differential across the main valve. An electrostatically controlled pilot valve is provided for controlling the pressure differential across the main valve for “on-ff” operation. The electrostatically controlled pilot valve may also be operated to “modulate” the pressure differential across the main valve along a range of pressure differential values.

Abstract: A control system coupled to a pressure sensor calibrates the pressure sensor. The control system may measure a plurality of capacitance values at a plurality of corresponding applied voltages to compare the values with a first calibration mechanism generated by sample pressure sensors in a comparison. A final calibration mechanism may be generated by adjusting the first calibration mechanism in response to the comparison. The unknown differential pressure may be applied to a diaphragm of the pressure sensor. A capacitance value at the unknown differential pressure may then be measured. Using the final calibration mechanism, the differential pressure at the measured capacitance value may be retrieved.

Abstract: A low power switching valve array employing two or more actuated microvalves that are arranged to accommodate any desired number of inlets and any desired number of outlets. Fluid entering one of inlets may be directed to any one or more of the outlets. In one illustrative embodiment, a valve body may have a valve array inlet, and two or more pumping chambers defined within the valve body. Each of the two or more pumping chambers have an inlet in fluid communication with the valve array inlet. In another illustrative embodiment, a valve body may have a valve array outlet, and two or more pumping chambers defined within the valve body. Each of the two or more pumping chambers have an outlet in fluid communication with the valve array outlet.

Abstract: A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed to implant nitrogen atoms into the silicon oxide layer. A thermal drive-in process is then performed to diffuse the implanted nitrogen atoms across the silicon oxide layer.

Abstract: A valve structure having a top part, a flexible media conveyance, such as a tube, a diaphragm and a bottom part with a support for the tube. The top surface of the diaphragm and the bottom surface of the top part may have electrodes attached. When there is no electric potential applied across the electrodes, the diaphragm may rest on and close the passageway in the flexible tube for effectively preventing a fluid flow. When an electrical potential is applied to the electrodes, the diaphragm may be pulled up off from the tube thereby opening or partially opening the passageway in the tube for a media flow or pressure transfer. Partial opening may be for modulation purposes. There may be a tension mechanism attached to the diaphragm. A controller may apply an electrical potential to the electrodes for at least partially opening or closing the valve.

Abstract: An asymmetric micro pump may be adapted to provide a greater fluid compression between input and output ports of the micro pump, as well as increased flow rate due to higher actuation frequency. In some instances, asymmetric dual diaphragm micro pumps may be combined into assemblies to provide increased pressure build, improved pumping volume, or both, as desired.

Abstract: Ion implantation by mounting a semiconductor wafer on a rotating plate that is tilted at an angle relative to an ion implantation flux. The tilt angle and the ion implantation energy are adjusted to produce a desired implantation profile. Ion implantation of mesa structures, either through the semiconductor wafer's surface or through the mesa structure's wall is possible. Angled ion implantation can reduce or eliminate ion damage to the lattice structure along an aperture region. This enables beneficial ion implantation profiles in vertical cavity semiconductor lasers. Mask materials, beneficially that can be lithographically formed, can selectively protect the wafer during implantation. Multiple ion implantations can be used to form novel structures.

Abstract: The invention is generally concerned with vertical cavity surface emitting lasers. In one example, the vertical cavity surface emitting laser includes, among other things, an upper mirror structure having a metal contact, a top mirror above the metal contact, and a semiconductive top DBR having an insulation region, wherein the top DBR is no more than 3.5 microns thick and is disposed below the metal contact. Thus, the top DBR is sufficiently thick as to enable adequate current spreading, but thin enough to enable fabrication of an isolation region using relatively low energy ion implantation or relatively shallow etching.

Abstract: Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.

Abstract: A device for sensing pressure using two flexible diaphragms in which an additional element is added to promote rolling contact of the diaphragm. One embodiment aligns the flexible diaphragms in a non-parallel alignment such that deflection of one flexible diaphragm will roll with respect to the other to provide increased linear capacitive response. In another embodiment a non-conductive spacing element is positioned between the diaphragms to permit rolling contact upon displacement of a diaphragms. These devices are capacitive pressure gauges. One additional embodiment includes a cantilever hinge and rigid polymer disc to convert one diaphragm into a linearly deflecting diaphragm.