Abstract: Interposers for semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, an interposer includes a substrate, a contact pad disposed on the substrate, and a first through-via in the substrate coupled to the contact pad. A first fuse is coupled to the first through-via. A second through-via in the substrate is coupled to the contact pad, and a second fuse is coupled to the second through-via.

Abstract: An interposer includes a first surface on a first side of the interposer and a second surface on a second side of the interposer, wherein the first and the second sides are opposite sides. A first probe pad is disposed at the first surface. An electrical connector is disposed at the first surface, wherein the electrical connector is configured to be used for bonding. A through-via is disposed in the interposer. Front-side connections are disposed on the first side of the interposer, wherein the front-side connections electrically couple the through-via to the probe pad.

Abstract: A mounting structure for a semiconductor device includes a stepwise stress buffer layer under a likewise stepwise UBM structure.

Abstract: An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a substrate of the interposer. The test structure is intermediate and electrically coupled to at least two probe pads.

Abstract: An under-bump metallization (UBM) structure for a semiconductor device is provided. The UBM structure has a center portion and extensions extending out from the center portion. The extensions may have any suitable shape, including a quadrangle, a triangle, a circle, a fan, a fan with extensions, or a modified quadrangle having a curved surface. Adjacent UBM structures may have the respective extensions aligned or rotated relative to each other. Flux may be applied to a portion of the extensions to allow an overlying conductive bump to adhere to a part of the extensions.

Abstract: A device includes a substrate having a front surface and a back surface opposite the front surface. A capacitor is formed in the substrate and includes a first capacitor plate; a first insulation layer encircling the first capacitor plate; and a second capacitor plate encircling the first insulation layer. Each of the first capacitor plate, the first insulation layer, and the second capacitor plate extends from the front surface to the back surface of the substrate.

Abstract: An under-bump metallization (UBM) structure for a semiconductor device is provided. The UBM structure has a center portion and extensions extending out from the center portion. The extensions may have any suitable shape, including a quadrangle, a triangle, a circle, a fan, a fan with extensions, or a modified quadrangle having a curved surface. Adjacent UBM structures may have the respective extensions aligned or rotated relative to each other. Flux may be applied to a portion of the extensions to allow an overlying conductive bump to adhere to a part of the extensions.

Abstract: The present invention relates to electrostatically actuated device components and methods of making the same. In an embodiment, the invention includes a method of making an electrostatically actuated device component including providing a multilayered structure comprising a first layer comprising a first polymer, a second layer comprising a conductive material, the second layer disposed over the first layer, a third layer comprising a dielectric material, the third layer disposed over the second layer, positioning the multilayered structure within an injection mold, and injecting a second polymer into the mold and bonding the first layer to the second polymer to produce an electrostatically actuated device component. In an embodiment, the invention includes a method of injection molding a stator component for an electrostatically actuated valve.

Abstract: A mounting structure for a semiconductor device includes a stepwise stress buffer layer under a likewise stepwise UBM structure.

Abstract: A first embodiment is a method for semiconductor process control comprising clustering processing tools of a processing stage into a tool cluster based on processing data and forming a prediction model for processing a semiconductor wafer based on the tool cluster. A second embodiment is a method for semiconductor process control comprising providing cluster routes between first stage tool clusters and second stage tool clusters, assigning a comparative optimization ranking to each cluster route, and scheduling processing of wafers. The comparative optimization ranking identifies comparatively which cluster routes provide for high wafer processing uniformity.

Abstract: An apparatus for assembling an electronic device is disclosed, which includes one or more grid holders for maintaining one or more grids in association with a plurality of conducting components positioned perpendicular to the grid(s). One or more insulating components are also provided for mounting and supporting the conducting components. The grid holder(s) can be pushed onto the conducting components in order to eliminate the need for applying spot weld currents to the conducting components and thereby provide a weldless assembly apparatus for the precise construction of an electronic device.

Abstract: A VCSEL includes a substrate having a partially removed portion; a metal-assisted DBR having a metal layer and a first mirror stack, wherein the metal layer is located at the partially removed portion of the substrate; an active region having a plurality of quantum wells over the metal-assisted DBR; and a second mirror stack over the active region, wherein a number of alternating layers of the first mirror stack is substantially smaller than a number typically required for a VCSEL without the integrated metal reflector. Such a metal-assisted DBR is especially useful for a long-wavelength VCSEL on a InP substrate or a red-color VCSEL on a GaAs substrate.

Abstract: One embodiments includes a method that includes enabling an excitation laser during an excitation period, after a timed delay following the first excitation period, monitoring a photon scattering caused by the excitation laser, analyzing the photon scattering, automatically adjusting the timed delay to a modified timed delay based on the analyzed photon scattering and following the modified timed delay, enabling a Raman spectrometer to monitor Raman scattering caused by the excitation laser during a Raman monitoring period.

Abstract: A surface-enhance Raman scattering (SERS) film is disposed on a portion of an asymmetrical optical coating of a core. The core has diameter in a range from about 10 nanometer (nm) to about 1,000 nm. The asymmetrical optical coating is in contact with a covering the core. The SERS film, the asymmetrical optical coating, and the core make up a particle. The particle is disposed on a mounting substrate.

Abstract: One embodiment includes a method that includes scanning a plurality of specimens with a laser by moving the laser according to coordinates for laser movement and measuring a distance for each of the plurality of specimens, associating location information with each of the specimens of the plurality of specimens based on its distance from the laser and its coordinates for laser movement, recording a Raman spectrum for the plurality of specimens, associating a Raman spectrum with each specimen of the plurality of specimens and indicating a Raman spectrum and location information for at least one specimen.

Abstract: An apparatus includes a cartridge having a liquid drug reservoir configured to hold a liquid drug and a volatile liquid reservoir configured to hold a volatile liquid. The cartridge is configured so that vaporization of at least some of the volatile liquid creates a flow of the liquid drug out of the liquid drug reservoir. The apparatus also includes a flow sensor configured to monitor the flow of the liquid drug, a liquid valve configured to regulate the flow of the liquid drug, and an insertion unit configured to deliver the liquid drug to a person. The cartridge may also include a vaporized gas chamber configured to hold the gas. The gas in the vaporized gas chamber expands and pushes the liquid drug out of the liquid drug reservoir.

Abstract: A vertical cavity surface emitting laser (VCSEL) includes independently definable current and optical confinement structures that provide unique forms of drive current and transverse mode confinement, respectively. The optical guide may be formed from an upper distributed Bragg reflector (DBR), as an etched mesa structure and/or as an intracavity optical guide. The current guide may include an ion-implanted region within the upper DBR. A dielectric structure is formed over the upper DBR and surrounds the optical guide.

Abstract: A pressure sensor includes a housing portion with a fluid inlet and a polymer element within the housing portion. The polymer element may be coated with piezoresistive material to form a first resistor and may have associated electrodes. The polymer element includes a first resistance value that changes to a second resistive value in a response to a predetermined condition. The pressure sensor may also include a second polymer element that includes a first resistance value that changes to a second resistive value in a response to a predetermined condition.

Abstract: An apparatus for assembling an electronic device is disclosed, which includes one or more grid holders for maintaining one or more grids in association with a plurality of conducting components positioned perpendicular to the grid(s). One or more insulating components are also provided for mounting and supporting the conducting components. The grid holder(s) can be pushed onto the conducting components in order to eliminate the need for applying spot weld currents to the conducting components and thereby provide a weldless assembly apparatus for the precise construction of an electronic device.

Abstract: An asymmetric micro pump may be adapted to provide a greater fluid compression between input and output ports of the micro pump, as well as increased flow rate due to higher actuation frequency. In some instances, asymmetric dual diaphragm micro pumps may be combined into assemblies to provide increased pressure build, improved pumping volume, or both, as desired.