Abstract: A control system coupled to a pressure sensor calibrates the pressure sensor. The control system may measure a plurality of capacitance values at a plurality of corresponding applied voltages to compare the values with a first calibration mechanism generated by sample pressure sensors in a comparison. A final calibration mechanism may be generated by adjusting the first calibration mechanism in response to the comparison. The unknown differential pressure may be applied to a diaphragm of the pressure sensor. A capacitance value at the unknown differential pressure may then be measured. Using the final calibration mechanism, the differential pressure at the measured capacitance value may be retrieved.

Abstract: A pressure sensor includes a housing portion with a fluid inlet and a polymer element within the housing portion. The polymer element may be coated with piezoresistive material to form a first resistor and may have associated electrodes. The polymer element includes a first resistance value that changes to a second resistive value in a response to a predetermined condition. The pressure sensor may also include a second polymer element that includes a first resistance value that changes to a second resistive value in a response to a predetermined condition.

Abstract: A valve is provided that can selectively change the size of a flow channel in a valve in order to modulate the fluid flow through the valve. In one illustrative embodiment, the valve includes a housing that defines a cavity, with an inlet and an outlet extending into the cavity. A diaphragm is positioned in the cavity, where at least part of the diaphragm defines at least part of the fluid path. One or more electrodes are fixed relative to the diaphragm, and one or more electrodes are fixed relative to the housing such that the diaphragm can be electrostatically actuated to modulate the fluid flow through the valve.

Abstract: A gas valve body with a first flow chamber and, a second flow chamber including and a main valve positioned in line and between the first flow chamber and the second flow chamber. The main valve can be opened by creating a pressure differential across the main valve. An electrostatically controlled pilot valve is provided for controlling the pressure differential across the main valve for “on-ff” operation. The electrostatically controlled pilot valve may also be operated to “modulate” the pressure differential across the main valve along a range of pressure differential values.

Abstract: A valve structure having a top part, a flexible media conveyance, such as a tube, a diaphragm and a bottom part with a support for the tube. The top surface of the diaphragm and the bottom surface of the top part may have electrodes attached. When there is no electric potential applied across the electrodes, the diaphragm may rest on and close the passageway in the flexible tube for effectively preventing a fluid flow. When an electrical potential is applied to the electrodes, the diaphragm may be pulled up off from the tube thereby opening or partially opening the passageway in the tube for a media flow or pressure transfer. Partial opening may be for modulation purposes. There may be a tension mechanism attached to the diaphragm. A controller may apply an electrical potential to the electrodes for at least partially opening or closing the valve.

Abstract: A vertical cavity surface emitting laser having an oxidizable layer oxidized with enhanced lateral oxidation. The oxidation may involve adding oxygen in the form of a fluid, with or without other fluid such as water vapor, in the oxidizing environment, and/or in the layer to be oxidized. This oxidation approach may be used for layers with relatively low aluminum content such as in InP based structures, or with high aluminum content such as in GaAs based structures.

Abstract: A process for making a laser structure. The process is for the fabrication of a laser device such a vertical cavity surface emitting laser (VCSEL). The structures made involve dielectric and spin-on material planarization over wide and narrow trenches, coplanar contacts, non-coplanar contacts, thick and thin pad dielectric, air bridges and wafer thinning.

Abstract: A valve for regulating the flow of fluids (gas or liquid) using two flexible diaphragms in which an additional element is added to promote rolling contact between the diaphragms. The valve operates in a normally open configuration where fluid flows into the valve, passed through holes or openings in two electrostatically operative diaphragms and out of the valve. The holes or openings in one diaphragm are offset from the holes or openings in the other diaphragm, so that upon electro-static actuation, the diaphragms will seal together, closing the valve.

Abstract: A vertical cavity surface emitting laser (VCSEL) includes independently definable current and optical confinement structures that provide unique forms of drive current and transverse mode confinement, respectively. The optical guide may be formed from an upper distributed Bragg reflector (DBR), as an etched mesa structure and/or as an intracavity optical guide. The current guide may include an ion-implanted region within the upper DBR. A dielectric structure is formed over the upper DBR and surrounds the optical guide.

Abstract: A current confinement layer of a VCSEL is formed by adjusting flow rates of In-, Al-, and As-containing precursors introduced within a deposition chamber. By maintaining a low ratio between the flow rate of the As-containing precursors and the total flow rate of In- and Al-containing precursors (e.g., less than 25, 10, 5, or 1), a current confinement layer, lattice matched to InP and having an enhanced oxidation rate, may be formed.

Abstract: A vertical cavity surface emitting laser (VCSEL) structure includes a bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal layer interposed between the bottom DBR and the substrate, wherein the metal layer and bottom DBR form a composite mirror structure. A patterned dielectric layer may be interposed between the metal layer and the bottom DBR to reduce a deleterious chemical reaction between the metal layer and the bottom DBR.

Abstract: A VCSEL includes a substrate having a partially removed portion; a metal-assisted DBR having a metal layer and a first mirror stack, wherein the metal layer is located at the partially removed portion of the substrate; an active region having a plurality of quantum wells over the metal-assisted DBR; and a second mirror stack over the active region, wherein a number of alternating layers of the first mirror stack is substantially smaller than a number typically required for a VCSEL without the integrated metal reflector. Such a metal-assisted DBR is especially useful for a long-wavelength VCSEL on a InP substrate or a red-color VCSEL on a GaAs substrate.

Abstract: A device for sensing pressure using two perforated rigid films in which a diaphragm is mounted between the first two films. The device senses positive and negative pressure through a port or opening to the region for which pressure data is desired. The device communicates capacitive pressure and changes in that pressure. The flexible diaphragm is spaced from the first and second films such that the flexible diaphragm is adapted to flex toward the first film when pressure increases in the opening and is adapted to flex toward the second film when pressure decreases in the opening to change the capacitance between the diaphragm and at least one of the first and second films. Spacers are used to position all three elements.

Abstract: A valve for regulating the flow of fluids (gas or liquid) using two flexible diaphragms in which an additional element is added to promote rolling contact between the diaphragms. The valve operates in a normally open configuration where fluid flows into the valve, passed through holes or openings in two electrostatically operative diaphragms and out of the valve. The holes or openings in one diaphragm are offset from the holes or openings in the other diaphragm, so that upon electro-static actuation, the diaphragms will seal together, closing the valve.

Abstract: A device for sensing pressure using two flexible diaphragms in which an additional element is added to promote rolling contact of the diaphragm. One embodiment aligns the flexible diaphragms in a non-parallel alignment such that deflection of one flexible diaphragm will roll with respect to the other to provide increased linear capacitive response. In another embodiment a non-conductive spacing element is positioned between the diaphragms to permit rolling contact upon displacement of a diaphragms. These devices are capacitive pressure gauges. One additional embodiment includes a cantilever hinge and rigid polymer disc to convert one diaphragm into a linearly deflecting diaphragm.

Abstract: A device for sensing pressure using two perforated rigid films in which a diaphragm is mounted between the first two films. The device senses positive and negative pressure through a port or opening to the region for which pressure data is desired. The device communicates capacitive pressure and changes in that pressure. The flexible diaphragm is spaced from the first and second films such that the flexible diaphragm is adapted to flex toward the first film when pressure increases in the opening and is adapted to flex toward the second film when pressure decreases in the opening to change the capacitance between the diaphragm and at least one of the first and second films. Spacers are used to position all three elements.

Abstract: A process for making a laser structure. The process is for the fabrication of a laser device such a vertical cavity surface emitting laser (VCSEL). The structures made involve dielectric and spin-on material planarization over wide and narrow trenches, coplanar contacts, non-coplanar contacts, thick and thin pad dielectric, air bridges and wafer thinning.

Abstract: A device for sensing pressure including a chamber defining part having a first diaphragm mounted in communication with the sealed chamber defining part, and a second diaphragm electrically insulated from the first, preferably by a spacer. The diaphragms are flexible and have a conductive surface. A sensor chamber is mounted on the other side of the second diaphragm. It has an opening in communication with a sensing atmosphere. One of the diaphragms includes openings it its surface to permit fluid to flow through the openings and the other diaphragm is solid and responds to change in pressure in the sensor chamber to move away from or toward the one diaphragm. Electrical connections measure the capacitance between the diaphragms as a function of the pressure in the sensor chamber.

Abstract: A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed to implant nitrogen atoms into the silicon oxide layer. A thermal drive-in process is then performed to diffuse the implanted nitrogen atoms across the silicon oxide layer.

Abstract: This disclosure concerns methods for ion implantation of semiconductor devices such as VCSELs. In on example of such a method, a surface of the semiconductor structure is disposed at a predetermined orientation. The semiconductor structure is then rotated at a predetermined speed. An ion beam of characteristic flux is generated and directed at the surface of the semiconductor structure so that the ion beam is incident on the surface at an incident flux angle. Because the ion beam is incident on the surface at a defined angle, an implant region having an approximately wedge shaped cross-section is formed in the semiconductor device.