Abstract: A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed to implant nitrogen atoms into the silicon oxide layer. A thermal drive-in process is then performed to diffuse the implanted nitrogen atoms across the silicon oxide layer.

Abstract: This disclosure concerns methods for ion implantation of semiconductor devices such as VCSELs. In on example of such a method, a surface of the semiconductor structure is disposed at a predetermined orientation. The semiconductor structure is then rotated at a predetermined speed. An ion beam of characteristic flux is generated and directed at the surface of the semiconductor structure so that the ion beam is incident on the surface at an incident flux angle. Because the ion beam is incident on the surface at a defined angle, an implant region having an approximately wedge shaped cross-section is formed in the semiconductor device.

Abstract: The invention is generally concerned with vertical cavity surface emitting lasers. In one example, the vertical cavity surface emitting laser includes, among other things, an upper mirror structure having a metal contact, a top mirror above the metal contact, and a semiconductive top DBR having an insulation region, wherein the top DBR is no more than 3.5 microns thick and is disposed below the metal contact. Thus, the top DBR is sufficiently thick as to enable adequate current spreading, but thin enough to enable fabrication of an isolation region using relatively low energy ion implantation or relatively shallow etching.

Abstract: A long wavelength vertical cavity surface emitting laser having a substrate, a first mirror situated on the substrate, an active region situated on the first mirror, a second mirror situated on the active region. The first mirror may have several pairs of layers with an oxidized layer in one or more pairs of that mirror. The substrate may include InP and the mirror components may be compatible with the InP. The one or more layers in the first mirror may be oxidized via a trench-like approach or other arrangement.

Abstract: A vertical cavity surface emitting laser having an oxidizable layer oxidized with enhanced lateral oxidation. The oxidation may involve adding oxygen in the form of a fluid, with or without other fluid such as water vapor, in the oxidizing environment, and/or in the layer to be oxidized. This oxidation approach may be used for layers with relatively low aluminum content such as in InP based structures, or with high aluminum content such as in GaAs based structures.

Abstract: A vertical cavity emitting laser (VCSEL) having a tunnel junction. The junction may be isolated with an implant into a top mirror and past the junction and p-layer. A trench around the VCSEL may result in reduced capacitance and more D.C. isolation of the junction. The implant may occur after the trench is made. Some implant may pass the trench to a bottom mirror. Additional isolation and current confinement may be provided with lateral oxidation of a layer below the junction. Internal trenches may be made from the top of the VCSEL vertically to an oxidizable layer below the junction. For further isolation, an open trench may be placed around a bonding pad and its bridge to the VCSEL and internal vertical trenches may be placed on the pad and its bridge down to the oxidizable layer.

Abstract: VCSELs having upper mirror structures comprised of a semiconductive top DBR, metal contacts, and a top mirror. The top DBR is thick enough for adequate current spreading, but thin enough, being no more than 3.5 microns, to enable easy fabrication of an isolation region. The top mirror, which is over the top DBR, enhances reflectivity. That top mirror is beneficially comprised of a dielectric material, such as TiO2; TiO2+SiO2 (robust and reliable); TiO2+Al2O3 (good thermal conductivity); or Si+MgO, or of a metal. The top mirror is beneficially formed using a vacuum deposition method, such as e-beam or sputtering. The metal contacts are formed on the top DBR. The VCSELs further include a substrate with an electrical contact, a bottom DBR, a bottom spacer, an active region, and a top spacer. Such VCSELs are particularly beneficial at long wavelengths.

Abstract: Ion implantation by mounting a semiconductor wafer on a rotating plate that is tilted at an angle relative to an ion implantation flux. The tilt angle and the ion implantation energy are adjusted to produce a desired implantation profile. Ion implantation of mesa structures, either through the semiconductor wafer's surface or through the mesa structure's wall is possible. Angled ion implantation can reduce or eliminate ion damage to the lattice structure along an aperture region. This enables beneficial ion implantation profiles in vertical cavity semiconductor lasers. Mask materials, beneficially that can be lithographically formed, can selectively protect the wafer during implantation. Multiple ion implantations can be used to form novel structures.

Abstract: A vertical cavity emitting laser (VCSEL) having a tunnel junction. The junction may be isolated with an implant into a top mirror and past the junction and p-layer. A trench around the VCSEL may result in reduced capacitance and more D.C. isolation of the junction. The implant may occur after the trench is made. Some implant may pass the trench to a bottom mirror. Additional isolation and current confinement may be provided with lateral oxidation of a layer below the junction. Internal trenches may be made from the top of the VCSEL vertically to an oxidizable layer below the junction. For further isolation, an open trench may be placed around a bonding pad and its bridge to the VCSEL and internal vertical trenches may be placed on the pad and its bridge down to the oxidizable layer.

Abstract: Vertical cavity surface emitting laser arrays that emit light at different wavelengths and that are suitable for wavelength multiplexed applications. Such arrays are beneficially produced using binary masks that control the thickness elements of a spacer, which in turn controls the wavelengths of light from the individual VCSEL elements. The binary masks can be used to control either deposition (growth) or etching. The binary masks, which are comprised of open areas and closed areas, are selectively applied to an intermediate VCSEL array structure.

Abstract: A graded optical element is provided that includes graded layers of optical material, wherein the layers may or may not have different indexes of refraction. A method for making such a graded thickness optical element is also provided. A masking layer is preferably spaced above a substrate, where the masking layer has at least one aperture therein. Optical material is then deposited on the substrate through the aperture in the masking layer to form a layer of refr material that extends laterally beyond the aperture in the masking layer in at least one region.

Abstract: Vertical cavity surface emitting laser arrays that emit light at different wavelengths and that are suitable for wavelength multiplexed applications. Such arrays are beneficially produced using binary masks that control the thickness elements of a spacer, which in turn controls the wavelengths of light from the individual VCSEL elements. The binary masks can be used to control either deposition (growth) or etching. The binary masks, which are comprised of open areas and closed areas, are selectively applied to an intermediate VCSEL array structure.

Abstract: A graded optical element is provided that includes graded layers of optical material, wherein the layers may or may not have different indexes of refraction. A method for making such a graded thickness optical element is also provided. A masking layer is preferably spaced above a substrate, where the masking layer has at least one aperture therein. Optical material is then deposited on the substrate through the aperture in the masking layer to form a layer of refr material that extends laterally beyond the aperture in the masking layer in at least one region.