Abstract: A semiconductor light-emitting device and a method for manufacturing the same is disclosed, which improves light extraction efficiency by forming a plurality of protrusions on a surface of a substrate for growing a nitride semiconductor material thereon, the semiconductor light-emitting device comprising a substrate; one or more first protrusions on the substrate, each first protrusion having a recess through which a surface of the substrate is exposed planarly; a first semiconductor layer on the substrate including the first protrusions; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer; and a second electrode on the second semiconductor layer.

Abstract: A semiconductor light-emitting device capable of improving current distribution, and a method for manufacturing the same is disclosed, wherein the semiconductor light-emitting device comprises a substrate; an N-type nitride semiconductor layer on the substrate; an active layer on the N-type nitride semiconductor layer; a P-type nitride semiconductor layer on the active layer; a groove in the P-type nitride semiconductor layer to form a predetermined pattern in the P-type nitride semiconductor layer; a light guide of transparent non-conductive material in the groove; and a transparent electrode layer on the P-type nitride semiconductor layer with the light guide.

Abstract: Disclosed is a semiconductor memory apparatus, including: a memory cell array configured to include a plurality of memory cells; a switching unit configured to be coupled to data input and output pads and control a data transfer path of data applied to the data input and output pads in response to a test mode signal; a write driver configured to drive data transferred from the switching unit and write the data in the memory cell array at a normal mode; and a controller configured to transfer the data from the switching unit to the memory cell at a test mode.

Abstract: The system and method provided herein for limiting the effects of arcing in field-type electron emitter arrays improves the robustness of such arrays. Field-type electron emitter arrays generally have a substrate, an insulator, and a gating electrode. By including a resistive substance in the gate of the emitter array, arcing events may be isolated to a single emitter such that the remaining emitters of an array can continue electron emission and/or the short circuit current of the arc can be limited.

Abstract: The present invention relates to a connection molding for automation of a three- phase motor winding, which specifically comprises: a fixed coil part fixed inside of a main body, a coil part installed within the fixed coil part, a central shaft fixed to the main body and passing through the coil part, and a connector part coupled to the top of the coil part so that the coil of the coil part is connected thereto and the central shaft passes and is coupled therethrough.

Abstract: An inductor includes an electrical conductor wound in a magnetic flux concentrating pattern, the electrical conductor comprises a plurality of carbon nanotubes that are substantially aligned with an axis along a center of the electrical conductor.

Abstract: The vertical light emitting diode includes a substrate having a plurality of penetrating via-holes, a plurality of nitride semiconductor layers formed on the substrate, a first electrode formed on the plurality of nitride semiconductor layers, and a second electrode formed to fill the plurality of via-holes thereby contacting part of the plurality of nitride semiconductor layers.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same is disclosed, which improves light extraction efficiency by forming a plurality of protrusions on a surface of a substrate for growing a nitride semiconductor material thereon, the semiconductor light-emitting device comprising a substrate; one or more first protrusions on the substrate, each first protrusion having a recess through which a surface of the substrate is exposed planarly; a first semiconductor layer on the substrate including the first protrusions; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer; and a second electrode on the second semiconductor layer.

Abstract: A semiconductor light-emitting device capable of improving current distribution, and a method for manufacturing the same is disclosed, wherein the semiconductor light-emitting device comprises a substrate; an N-type nitride semiconductor layer on the substrate; an active layer on the N-type nitride semiconductor layer; a P-type nitride semiconductor layer on the active layer; a groove in the P-type nitride semiconductor layer to form a predetermined pattern in the P-type nitride semiconductor layer; a light guide of transparent non-conductive material in the groove; and a transparent electrode layer on the P-type nitride semiconductor layer with the light guide.

Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Abstract: A method for continuously growing carbon nanotubes may include providing a melt comprising carbon and a catalyst at a temperature between about 1,200 degrees Celsius and about 2,500 degrees Celsius, selecting a carbon nanotube seed having at least one of a semiconductor electrical property and a metallic electrical property from a plurality of carbon nanotube seeds, contacting the selected carbon nanotube seed to a surface of the melt, and moving the selected carbon nanotube seed away from the surface of the melt at a rate operable to continuously grow a carbon nanotube, and continuously growing the carbon nanotube having the selected electrical property. Method for continuously growing a graphene sheet, and apparatus for continuously growing carbon nanotubes and graphene sheets are also disclosed.

Abstract: The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices.

Abstract: A method and associated structure for forming a free-standing electrostatically-doped carbon nanotube device is described. The method includes providing a carbon nanotube on a substrate in such a way as to have a free-standing portion. One way of forming a free-standing portion of the carbon nanotube is to remove a portion of the substrate. Another described way of forming a free-standing portion of the carbon nanotube is to dispose a pair of metal electrodes on a first substrate portion, removing portions of the first substrate portion adjacent to the metal electrodes, and conformally disposing a second substrate portion on the first substrate portion to form a trench.

Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Abstract: The system and method provided herein for limiting the effects of arcing in field-type electron emitter arrays improves the robustness of such arrays. Field-type electron emitter arrays generally have a substrate, an insulator, and a gating electrode. By including a resistive substance in the gate of the emitter array, arcing events may be isolated to a single emitter such that the remaining emitters of an array can continue electron emission and/or the short circuit current of the arc can be limited.

Abstract: An inductor includes an electrical conductor wound in a magnetic flux concentrating pattern, the electrical conductor comprises a plurality of carbon nanotubes that are substantially aligned with an axis along a center of the electrical conductor.

Abstract: A method and associated structure for forming a free-standing electrostatically-doped carbon nanotube device is described. The method includes providing a carbon nanotube on a substrate in such a way as to have a free-standing portion. One way of forming a free-standing portion of the carbon nanotube is to remove a portion of the substrate. Another described way of forming a free-standing portion of the carbon nanotube is to dispose a pair of metal electrodes on a first substrate portion, removing portions of the first substrate portion adjacent to the metal electrodes, and conformally disposing a second substrate portion on the first substrate portion to form a trench.

Abstract: The present invention includes field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors. According to one embodiment, a field effect transistor includes a semiconductive layer configured to form a channel region; a pair of spaced conductively doped semiconductive regions in electrical connection with the channel region of the semiconductive layer; a gate intermediate the semiconductive regions; and a gate dielectric layer intermediate the semiconductive layer and the gate, the gate dielectric layer being configured to align the gate with the channel region of the semiconductive layer. In one aspect, chemical-mechanical polishing self-aligns the gate with the channel region. According to another aspect, a field emission device includes a transistor configured to control the emission of electrons from an emitter.

Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Abstract: Organic light emitting devices are disclosed that use a micro electromechanical system (MEMS) structure to enable a pixel and pixel array wherein each pixel contains a MEMS and an OLED element. A MEMS structure is used for switching the OLED element. These OLED/MEMS pixels can be fabricated on flex circuit, silicon, as well as other inorganic materials. They can be fabricated in a large array for developing a 2-dimensional display application and each pixel can be addressed through conventional matrix scanning addressing scheme. The ability of fabricating these OLED/MEMS pixels on flexible organic substrates as well as other rigid substrates enables wider selection of substrate materials for use with different applications.