Abstract: Described are a system, method, and computer program product for wait time estimation using predictive modeling. The method includes receiving a request for a predictive wait time estimate from a user including a designated time and a selection of a merchant. The method also includes determining an initial queue length and determining a service rate for each subinterval of a plurality of subintervals from the current time to the designated time. The method further includes producing a plurality of arrival rates using a trained predictive model, and determining a difference between an arrival rate and a service rate for each subinterval, to produce a plurality of changes in queue length. The method further includes determining a queue length based on the plurality of changes in queue length, generating the predictive wait time estimate based on the queue length, and transmitting the predictive wait time estimate to the user.

Abstract: A data storage device includes a non-volatile memory and a data storage controller. The data storage controller is configured to generate first XOR parities based on first data of a first metablock of the non-volatile memory and store the first XOR parities in a second metablock of the non-volatile memory. The data storage controller is also configured to generate second XOR parities corresponding to second data of the second metablock. The second data includes two or more XOR parities of the first XOR parities. The data storage controller is further configured to store the second parities in a reserved portion of the first metablock.

Abstract: A data storage device includes a non-volatile memory and a data storage controller. The data storage controller is configured to generate first XOR parities based on first data of a first metablock of the non-volatile memory and store the first XOR parities in a second metablock of the non-volatile memory. The data storage controller is also configured to generate second XOR parities corresponding to second data of the second metablock. The second data includes two or more XOR parities of the first XOR parities. The data storage controller is further configured to store the second parities in a reserved portion of the first metablock.

Abstract: Technology is disclosed herein for managing parity data in non-volatile memory. As user data is programming into respective groups of non-volatile memory cells, the system accumulates parity data. The system may accumulate XOR parity based on successive bitwise XOR operations of user data. After programming is complete, the system performs a post-program read test of the data stored into each respective group of memory cells. The system re-calculates the parity data such that the parity data is no longer based on the user data that was stored in any group of memory cells for which the post-program read test failed. For example, the system will perform an additional bitwise XOR between the accumulated XOR parity data with the user data that was stored in the group of memory cells for which the post-program read test failed. The parity data is programmed to a group of memory cells.

Abstract: Methods, systems, and media for identifying abusive user accounts based on playlists are provided. In accordance with some embodiments of the disclosed subject matter, a method for identifying abusive content is provided, the method comprising: determining at least one feature associated with a playlist created by a user-generated channel; calculating a playlist score associated with the playlist based on a playlist classifier, wherein the playlist classifier comprises a function that maps the at least one feature to the playlist score; calculating a channel score associated with the user-generated channel based at least on the calculated playlist score; determining that one or more content items associated with the user-generated channel is to be demoted based on the calculated channel score, wherein the one or more content items comprises the playlist; and causing the one or more content items to be demoted.

Abstract: The current disclosure relates to a method of etching etchable material from a semiconductor substrate is disclosed. Th method comprises providing a substrate comprising the etchable material into a reaction chamber and providing a haloalkylamine into the reaction chamber in vapor phase for etching the etchable material. The disclosure further relates to a semiconductor processing assembly, and to a method of cleaning a reaction chamber.

Abstract: Methods of forming indium gallium zinc oxide (IGZO) films by vapor deposition are provided. The IGZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGZO films comprise an IGZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase gallium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH3, N2O, NO2 and H2O2.

Abstract: Described are a system, method, and computer program product for generating and applying a predictive wait time estimate using predictive modeling. The method includes receiving initial transaction data representative of a plurality of transactions between a plurality of transaction accounts and at least one merchant. The method also includes generating, for each subinterval, training data including at least one of the following: service rate during the subinterval, number of transactions during the subinterval, total transaction value during the subinterval, mean transaction value during the subinterval, year, month, day of week, or any combination thereof. The method further includes generating a predictive model that generates an output of arrival rate for an input of at least one time parameter. The method further includes generating the predictive wait time estimate for a designated time.

Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

Abstract: To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

Abstract: The present disclosure is directed to methods and systems for depositing a material within a gap of a substrate in a cyclic deposition process. The methods and systems utilize an inhibitor to preferentially blocks chemisorption of a subsequently introduced first precursor at a portion of available chemisorption sites in the gap to promote deeper penetration of the first precursor into the gap and/or more uniform chemisorption of the first precursor in the gap used in forming a desired material.

Abstract: Digital image object anchor point techniques are described that increase user efficiency in interacting with a user interface to create digital images. This is achieved through use of anchor points by the digital image editing system that are defined with respect to an actual geometry of the object. Further, filtering and prioritization techniques are also leveraged to promote real world utility and efficiency of these techniques as a balance between having too many and two few anchor points.

Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which a substrate comprising a metal, metal oxide, metal nitride or metal oxynitride layer is contacted with an etch reactant comprising an vapor-phase N-substituted derivative of amine compound. In some embodiments the etch reactant reacts with the substrate surface to form volatile species including metal atoms from the substrate surface. In some embodiments a metal or metal nitride surface is oxidized as part of the ALE cycle. In some embodiments a substrate surface is contacted with a halide as part of the ALE cycle. In some embodiments a substrate surface is contacted with a plasma reactant as part of the ALE cycle.

Abstract: The present disclosure is directed to methods in situ generation of a hydrogen halide for use in an etching process for selective etching of a material from other(s) on a surface layer of a substrate, to methods of etching utilizing the in situ generated hydrogen halide, and to systems carrying the out the disclosed processes.

Abstract: Methods, systems, and media for identifying abusive user accounts based on playlists are provided. In accordance with some embodiments of the disclosed subject matter, a method for identifying abusive content is provided, the method comprising: determining at least one feature associated with a playlist created by a user-generated channel; calculating a playlist score associated with the playlist based on a playlist classifier, wherein the playlist classifier comprises a function that maps the at least one feature to the playlist score; calculating a channel score associated with the user-generated channel based at least on the calculated playlist score; determining that one or more content items associated with the user-generated channel is to be demoted based on the calculated channel score, wherein the one or more content items comprises the playlist; and causing the one or more content items to be demoted.

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

Abstract: Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.

Abstract: A technique for embedding and utilizing credentials in a network address may include requesting a network address for a client device by providing an account identifier to a server computer associated with a service provider. A network address that is mapped to the account identifier can be assigned to the client device. The network address may include a routing prefix field and a network interface identifier field. The routing prefix field may include an issuer identifier of an issuer of the account, and the network interface identifier field may include an interface identifier that maps to the account identifier. By embedding credentials such as an account identifier in the network address, the actual account identifier need not be transmitted to perform actions on the account.

Abstract: To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

Abstract: Methods, systems, and computer storage media for providing detection of unsecure network policies in a network segment and automatically remediating the unsecure policies based on pre-defined network policies in a computing environment. In particular, a security maintenance manager of an access management system in the computing environment detects an unsecure network policy based on comparing an active configuration of the network segment to an expected configuration of the network segment and modifies the active configuration to at least restore restrictions of network policies of the expected configuration to the active configuration. In operation, the security maintenance manager periodically accesses an active configuration record for the network segment and compares the active configuration record to an expected configuration record for the network segment. Based on comparing the active configuration record to the expected configuration record, restrictions are remediated (e.g.