Abstract: To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

Abstract: A semiconductor vapor etching device is disclosed. The device can include an intermediate chamber between a vapor source and a reaction chamber. Etch reactant vapor can be pulsed from the intermediate chamber to the reaction chamber to etch a substrate.

Abstract: Methods, systems, and media for identifying abusive user accounts based on playlists are provided. In accordance with some embodiments of the disclosed subject matter, a method for identifying abusive content is provided, the method comprising: determining at least one feature associated with a playlist created by a user-generated channel; calculating a playlist score associated with the playlist based on a playlist classifier, wherein the playlist classifier comprises a function that maps the at least one feature to the playlist score; calculating a channel score associated with the user-generated channel based at least on the calculated playlist score; determining that one or more content items associated with the user-generated channel is to be demoted based on the calculated channel score, wherein the one or more content items comprises the playlist; and causing the one or more content items to be demoted.

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

Abstract: Described are a system, method, and computer program product for generating and applying a predictive wait time estimate using predictive modeling. The method includes receiving initial transaction data representative of a plurality of transactions between a plurality of transaction accounts and at least one merchant. The method also includes generating, for each subinterval, training data including at least one of the following: service rate during the subinterval, number of transactions during the subinterval, total transaction value during the subinterval, mean transaction value during the subinterval, year, month, day of week, or any combination thereof. The method further includes generating a predictive model that generates an output of arrival rate for an input of at least one time parameter. The method further includes generating the predictive wait time estimate for a designated time.

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Abstract: Techniques for managing communications sessions between multiple user devices is provided. The computer system may support a capability of automatically establishing communications sessions between the user devices. For example, the computer system may receive audio data from a voice controlled device (VCD). The audio data may indicate an utterance of a user confirming that information of a payment instrument is needed for transaction. The computer system may initiate a second communications session with a second device of the user to receive the information required for the transaction. In some examples, the computer system may execute the script to synthesize text-to-speech content that requests user input for the information from the second device. Once received, the information may be stored in a user account associated with the user. The VCD may be instructed to resume communications with the user upon termination of the second communications session with the second device.

Abstract: A chemical dispensing apparatus for providing a chlorine vapor to a reaction chamber is disclosed. The chemical dispensing apparatus may include: a chemical storage vessel configured for storing a chlorine-containing chemical species, a reservoir vessel in fluid communication with the chemical storage vessel, the reservoir vessel configured for converting the chlorine-containing chemical species to the chlorine vapor, and a reaction chamber in fluid communication with the reservoir vessel. Methods for dispensing a chlorine vapor to a reaction chamber are also disclosed.

Abstract: Described herein is a system and method for estimating wait times at various resource providers based on transaction information submitted to a processing network. In some embodiments, the system identifies a time distance between a target resource provider and a plurality of other resource providers in order to identify resource providers local to the target resource provider. Additionally, the system may identify segments for each of a plurality of users on the system. The processing network may identify recent transaction requests received from each of the resource providers local to the target resource provider. The processing network may then identify users associated with each of those transaction requests. Based on the segments assigned to each of those users, the system may estimate and arrival rate, and subsequently an estimated wait time, for the target resource provider.

Abstract: Methods for forming a rhenium-containing film on a substrate by a cyclical deposition are disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a rhenium precursor; and contacting the substrate with a second vapor phase reactant. Semiconductor device structures including a rhenium-containing film formed by the methods of the disclosure are also disclosed.

Abstract: A method and a system for recommendation of a succession of one or more services for a service workflow are disclosed. In an embodiment, a query is received to retrieve one or more services from a repository of a plurality of services stored in a hierarchical structure. The hierarchical structure comprises a plurality of hierarchical levels, each hierarchical level in the plurality of hierarchical levels comprising a set of nodes. Each node in the set of nodes in each hierarchical level, stores a first semantic information and a second semantic information. Further, the query is compared with the first semantic information and the second semantic information associated with a first node. The first node or the second node is selected based on the comparison. Further, the first set of services or the combination of services, associated with the selected node is recommended, as the service workflow, to the user.

Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Abstract: A chemical dispensing apparatus for providing a chlorine vapor to a reaction chamber is disclosed. The chemical dispensing apparatus may include: a chemical storage vessel configured for storing a chlorine-containing chemical species, a reservoir vessel in fluid communication with the chemical storage vessel, the reservoir vessel configured for converting the chlorine-containing chemical species to the chlorine vapor, and a reaction chamber in fluid communication with the reservoir vessel. Methods for dispensing a chlorine vapor to a reaction chamber are also disclosed.

Abstract: Resource access credential security is improved by providing authentication tools and techniques which do not rely on embedment of credentials in the source code or configuration files of programs that use the credentials to access secured resources. A program under development in a development tool determines through the operation of authentication code that it is under development and that a developer identity is to be used to obtain access credentials, instead of using an identity of the program itself as occurs when the program is not under development. The development tool may be stand-alone, or may be in an integrated development environment, and may be extensible or not. The program may be an application, a web service, or other software, and may be deployed to a cloud or other networked environment. Authentication may be based on a selected developer identity or selected account or other subscriber data.

Abstract: A computer device for providing evidence of goods delivered and services performed. The computer device can include one or more processors and non-transitory computer-readable media storing computer-readable instructions executable by the one or more processors to perform operations. The operations can include storing video media recorded by a provider, the video media being at least a portion of a performance by a provider providing one of goods and services in the home of a customer, and delivering at least a portion of the video media to the customer. The delivered portion of the video media can be a receipt for the one of goods and services performed.

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.