Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.

Abstract: A system and method for computing thermal boundary conditions from an unstructured computational fluid dynamics (CFD) simulation for a thermal simulation of a structural component are disclosed. The thermal boundary conditions include convective heat transfer coefficient (HTC) and reference temperature (Tref). In one embodiment, prism cells are formed to capture boundary layer substantially next to a wall of the structural component. Further, tetrahedral cells are formed to capture a diffused temperature layer substantially next to the formed last prism cell and in a direction normal to the wall. Furthermore, temperature of each of the prism cells is computed in the direction normal to the wall until a substantially first tetrahedral cell. In addition, the computed temperature of the prism cell that is substantially adjacent to the first tetrahedral cell is declared as the Tref. Also, the HTC is computed using the obtained Tref.

Abstract: An apparatus and method for merging the data of a first container and a second container into a target container that includes at least one block having a plurality of extents to store data objects. The apparatus may include a storage sever coupled to a plurality of storage devices. The storage server is configured to merge multiple data objects of the plurality of containers that store a data object per each container into a target container that stores multiple data objects within the target container.

Abstract: A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.

Abstract: The present invention relates to methods and apparatuses for the operation of a distillation tower containing a controlled freezing zone and at least one distillation section. The process and tower design are utilized for the additional recovery of hydrocarbons from an acid gas. In this process, a separation process is utilized in which a multi-component feedstream is introduced into an apparatus that operates under solids forming conditions for at least one of the feedstream components. The freezable component, although typically CO2, H2S, or another acid gas, can be any component that has the potential for forming solids in the separation system. A dividing wall is added to at least a portion of the lower distillation section of the apparatus to effect the separation of at least some fraction of the hydrocarbons in that portion of the tower.

Abstract: A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.

Abstract: Systems and methods for designing and controlling distributed generation resources are disclosed. Monolithic or distributed controllers control the power requests sent to each distributed generation resource to achieve optimal efficiency using rule-based and/or fuzzy logic-based control techniques. High-impedance fault (HIF) detection circuitry allows power export to the utility grid in normal operating circumstances, and when an islanding condition is detected, ceases that export within two seconds and prevents further export until the condition is cleared.

Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

Abstract: The present invention provides distance-proof N-pass Auto Negotiation systems and methods for Gigabit Ethernet. The present invention distance proofs Auto Negotiation. No matter the distance between two nodes configured according to the systems and methods of the present invention, the link at either end of the two nodes will only come up once each end has negotiated, resolved its link partner's capabilities, and received a similar success signal from the remote node.

Abstract: A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

Abstract: A method is disclosed for enhancing tensile stress in the channel region of a semiconductor structure. The method includes performing a series of ion implantation steps at predetermined implant energies to implant carbon ions deep within the semiconductor structure to create a strain layer. The strain layer is annealed using a millisecond anneal process. Subsequent ion implantation steps are used to dope the source/drain region, and the source/drain extension with phosphorus ions, so that the doped regions remain above the strain layer. A second millisecond anneal step activates the source/drain region and the source/drain extension. The strain layer enhances carrier mobility within a channel region of the semiconductor structure, while also preventing diffusion of P within the structure.

Abstract: A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

Abstract: A control apparatus for plasma immersion ion implantation of a dielectric substrate which includes an electrode disposed above a generated plasma in a plasma chamber. The electrode is biased with negative voltage pulses at a potential that is higher than a potential of a substrate or cathode configured to receive ion implantation. The electrode is more negative to give the electrons generated as secondary electrons from the electrode sufficient energy to overcome the negative voltage of the high voltage sheath around the substrate thereby reaching the substrate. These electrons are accelerated toward the substrate to neutralize charge build-up on the substrate.

Abstract: A de-entrainment device separates entrained liquid from vapor in a fluid stream that flows through a chimney tray in a distillation tower. The separated liquid is collected and shielded from the fluid stream to prevent re-entrainment of the liquid in the vapor flowing upward into the tower. The chimney tray includes risers with hats that have gutters to guide liquid toward the tray deck, channels to collect and drain liquid from the top of the hats to the tray deck, and baffles extending from the risers to shield the liquid collected on the tray deck from the vapor flow.

Abstract: Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration.

Abstract: A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.

Abstract: A wind turbine includes a generator and a control system. The control system is configured to determine whether a predefined amount of turbulence will be induced to the wind turbine by a wake zone created by a wind turbine upstream thereof. The control system is also configured to adjust at least one constraint of the wind turbine to a first setting if the amount of turbulence is greater than the predefined amount, the constraint affecting power produced by the generator, and to adjust the constraint of the wind turbine to a second setting if the amount of turbulence is not greater than the predefined amount.

Abstract: A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.

Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

Abstract: Systems and methods for designing and controlling distributed generation resources are disclosed. Monolithic or distributed controllers control the power requests sent to each distributed generation resource to achieve optimal efficiency using rule-based and/or fuzzy logic-based control techniques. High-impedance fault (HIF) detection circuitry allows power export to the utility grid in normal operating circumstances, and when an islanding condition is detected, ceases that export within two seconds and prevents further export until the condition is cleared.