Abstract: Faster synthesis of photolithography mask modifications is described. In one embodiment, the invention includes synthesizing a first binary photolithography mask, developing perturbations to an estimated electric field generated by the first mask in use, and synthesizing a second binary photolithography mask by applying the perturbations to the first mask.

Abstract: Systems, techniques, and approaches to quickly generate mask patterns, synthesize near-fields, and design masks. In one aspect, a mask may be designed by modeling the transmitted field using a library of corrections and a fast field model.

Abstract: Systems and techniques to quickly and accurately model a transmitted electromagnetic field through a mask, to design a mask, and to create a library of corrections including edge corrections, edge-to-edge corrections, and corner corrections.

Abstract: As system for navigating primary media and meta-data on a computer system is described. The system involves accessing primary media from a primary media source, and accessing meta-data from a meta-data source. The system also involves generating a graphical user interface (GUI) for providing interaction between a user and the system in relation to the primary media. The GUI includes means for facilitating control of the primary media currently being played, and means for displaying a multidimensional graphical representation for depicting a timeline for indicating the current location of the primary media being played relative to a reference location in the primary media, and providing information relating to the meta-data associated with the primary media at the current location.

Abstract: A proximity correction tool receives an indication of a feature in a lithographic design. The proximity correction tool predicts a film edge placement for the feature in a resist film based at least in part on thermal proximity effects in the resist film.

Abstract: A reticle having only one phase delay value for a given wavelength of incident radiation. The reticle includes a first and second region, both transparent to incident radiation. The second region being adjacent to said first region. The incident radiation transmitted by the second region has a phase delay of other than an integer multiple of 90 degrees relative to said incident radiation transmitted by the first region.