Abstract: Various aspects of a light emitting apparatus include a substrate having at least one angled portion. Some aspects of the light emitting apparatus include at least one light emitting device arranged on the substrate. Some aspects of the light emitting apparatus include a plurality of conductors arranged on the substrate. In some aspects of the light emitting apparatus, the conductors are electrically coupled to the at least one light emitting device.

Abstract: In various embodiments, lighting systems include an electrically insulating carrier having a plurality of conductive elements disposed thereon and a light-emitting array. The light-emitting array is disposed over the carrier and includes a plurality of light-emitting diodes (LEDs) that each has at least two electrical contacts electrically connected to conductive elements by an electrical connection featuring solder.

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

Abstract: Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed.

Abstract: A linear lighting module includes a first string of series-connected LED dies and a second string of series-connected LED dies. The first string of LED dies is coupled in parallel with the second string of LED dies. All of the LED dies of the first and second strings are aligned with respect to one another. The LED dies of the first string and the second string form a combined string of interleaved LED dies such that an LED die of the second string is disposed between every successive pair of LED dies of the first string. The LED dies of the combined string are mounted on a flexible substrate. Each LED die of the combined string is electrically connected to two conductors. Except for the two end LED dies of the combined string, each successive LED die must be accessed by both conductors from alternating sides of the combined string.

Abstract: A gallium nitride based integrated circuit architecture includes a first electronic device including a first set of III-N epitaxial layers and a second electronic device including a second set of III-N epitaxial layers. The gallium nitride based integrated circuit architecture also includes one or more interconnects between the first electronic device and the second electronic device. The first electronic device and the second electronic device are disposed in a chip scale package.

Abstract: A linear lighting module includes a first string of series-connected LED dies and a second string of series-connected LED dies. The first string of LED dies is coupled in parallel with the second string of LED dies. All of the LED dies of the first and second strings are aligned with respect to one another. The LED dies of the first string and the second string form a combined string of interleaved LED dies such that an LED die of the second string is disposed between every successive pair of LED dies of the first string. The LED dies of the combined string are mounted on a flexible substrate. Each LED die of the combined string is electrically connected to two conductors. Except for the two end LED dies of the combined string, each successive LED die must be accessed by both conductors from alternating sides of the combined string.

Abstract: Methods of manufacturing device assemblies, as well as associated semiconductor assemblies, devices, systems are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a semiconductor device assembly that includes a handle substrate, a semiconductor structure having a first side and a second side opposite the first side, and an intermediary material between the semiconductor structure and the handle substrate. The method also includes removing material from the semiconductor structure to form an opening extending from the first side of the semiconductor structure to at least the intermediary material at the second side of the semiconductor structure. The method further includes removing at least a portion of the intermediary material through the opening in the semiconductor structure to undercut the second side of the semiconductor structure.

Abstract: A substrate structure includes a polycrystalline substrate, a plurality of thin film layers disposed on the polycrystalline substrate, a bonding layer coupled to at least a portion of the plurality of thin films, and a single crystal silicon layer joined to the bonding layer.

Abstract: In various embodiments, lighting systems include an electrically insulating carrier having a plurality of conductive elements disposed thereon and a light-emitting array. The light-emitting array is disposed over the carrier and includes a plurality of light-emitting diodes (LEDs) that each has at least two electrical contacts electrically connected to conductive elements by a conductive adhesive.

Abstract: Methods of manufacturing device assemblies, as well as associated semiconductor assemblies, devices, systems are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a semiconductor device assembly that includes a handle substrate, a semiconductor structure having a first side and a second side opposite the first side, and an intermediary material between the semiconductor structure and the handle substrate. The method also includes removing material from the semiconductor structure to form an opening extending from the first side of the semiconductor structure to at least the intermediary material at the second side of the semiconductor structure. The method further includes removing at least a portion of the intermediary material through the opening in the semiconductor structure to undercut the second side of the semiconductor structure.

Abstract: A wafer-level process for manufacturing solid state lighting (“SSL”) devices using large-diameter preformed metal substrates is disclosed. A light emitting structure is formed on a growth substrate, and a preformed metal substrate is bonded to the light emitting structure opposite the growth substrate. The preformed metal substrate can be bonded to the light emitting structure via a metal-metal bond, such as a copper-copper bond, or with an inter-metallic compound bond.

Abstract: A lighting device includes a monolithic LED chip flip-chip mounted onto an interconnect structure. The monolithic chip includes LED junctions formed from a single LED junction. An active electronic component is also mounted onto the interconnect structure at a distance from the monolithic chip that is less than five times the maximum dimension of the monolithic chip. The active electronic component controls LED drive currents independently supplied to the LED junctions. Different types of phosphor are disposed laterally above the various LED junctions. A color sensor measures the light emitted from the lighting device when drive currents are supplied to first and second LED junctions. The active electronic component then supplies more drive current to the first LED junction than to the second LED junction in response to the color sensor measuring the light emitted when the prior LED drive currents are supplied to the first and second LED junctions.

Abstract: Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.

Abstract: Flip chip LEDs include a transparent substrate or carrier having an active material attached thereto and having a number of electrodes disposed along a common surface of the active material. The substrate may include a number of surface features disposed along a first surface adjacent the active material for improving light extraction from the active material, and includes a number of surface features along a second surface opposite the first surface for minimizing internal reflection of light through the substrate, thereby improving light extraction from the transparent substrate. The surface features on both surfaces may be arranged having a random or ordered orientation relative to one another. A plurality of such flip chip LEDs may be physically packaged together in a manner providing electrical connection with the same for a lighting end-use application.

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

Abstract: Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.

Abstract: Engineered substrates having epitaxial templates for forming epitaxial semiconductor materials and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a first semiconductor material at a front surface of a donor substrate. The first semiconductor material is transferred to first handle substrate to define a first formation structure. A second formation structure is formed to further include a second semiconductor material homoepitaxial to the first formation structure. The method can further include transferring the first portion of the second formation structure to a second handle substrate such that a second portion of the second formation structure remains at the first handle substrate.

Abstract: Disclosed herein are wide band gap integrated circuits, such as gallium nitride (GaN) integrated circuits, including a plurality of groups of epitaxial layers formed on an engineered substrate, and methods of making the WBG integrated circuits. The epitaxial layers have a coefficient of thermal expansion (CTE) substantially matching the CTE of the engineered substrate. Mesas, internal interconnects, and electrodes configure each group of epitaxial layers into a WBG device. External interconnects connect different WBG devices into a WBG integrated circuit. The CTE matching allows the formation of epitaxial layers with reduced dislocation density and an overall thickness of greater than 10 microns on a six-inch or larger engineered substrate. The large substrate size and thick WBG epitaxial layers allow a large number of high density WBG integrated circuits to be fabricated on a single substrate.

Abstract: Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.