Patents by Inventor Wai-Fan Yau
Wai-Fan Yau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6632735Abstract: A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.Type: GrantFiled: August 7, 2001Date of Patent: October 14, 2003Assignee: Applied Materials, Inc.Inventors: Wai-Fan Yau, Ju-Hyung Lee, Nasreen Gazala Chopra, Tzu-Fang Huang, David Cheung, Farhad Moghadam, Kuo-Wei Liu, Yung-Cheng Lu, Ralf B. Willecke, Paul Matthews, Dian Sugiarto
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Patent number: 6627532Abstract: A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.Type: GrantFiled: October 5, 2000Date of Patent: September 30, 2003Assignee: Applied Materials, Inc.Inventors: Frederic Gaillard, Li-Qun Xia, Tian-Hoe Lim, Ellie Yieh, Wai-Fan Yau, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Lu
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Publication number: 20030162410Abstract: A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.Type: ApplicationFiled: February 25, 2003Publication date: August 28, 2003Applicant: Applied Materials, Inc.Inventors: Tzu-Fang Huang, Yung-Cheng Lu, Li-Qun Xia, Ellie Yieh, Wai-Fan Yau, David W. Cheung, Ralf B. Willecke, Kuowei Liu, Ju-Hyung Lee, Farhad K. Moghadam, Yeming Jim Ma
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Patent number: 6596655Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: GrantFiled: September 19, 2001Date of Patent: July 22, 2003Assignee: Applied Materials Inc.Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon
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Patent number: 6593247Abstract: A silicon oxide layer is produced by plasma enhanced oxidation of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. Films having low moisture content and resistance to cracking are deposited by introducing oxygen into the processing chamber at a flow rate of less than or equal to the flow rate of the organosilicon compounds, and generating a plasma at a power density ranging between 0.9 W/cm2 and about 3.2 W/cm2. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. The organosilicon compound preferably has 2 or 3 carbon atoms bonded to each silicon atom, such as trimethylsilane, (CH3)3SiH. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.Type: GrantFiled: April 19, 2000Date of Patent: July 15, 2003Assignee: Applied Materials, Inc.Inventors: Tzu-Fang Huang, Yung-Cheng Lu, Li-Qun Xia, Ellie Yieh, Wai-Fan Yau, David W. Cheung, Ralf B. Willecke, Kuowei Liu, Ju-Hyung Lee, Farhad K. Moghadam, Yeming Jim Ma
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Publication number: 20030124859Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.Type: ApplicationFiled: December 17, 2002Publication date: July 3, 2003Applicant: Applied Materials, Inc.Inventors: David Cheung, Wai-Fan Yau, Robert R. Mandal
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Publication number: 20030113992Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.Type: ApplicationFiled: November 21, 2002Publication date: June 19, 2003Applicant: Applied Materials, Inc.Inventors: Wai-Fan Yau, David Cheung, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Yu
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Patent number: 6562544Abstract: This invention provides a method and apparatus for depositing a silicon oxide film over an antireflective layer to reduce footing experienced in the a subsequently applied photoresist layer without substantially altering the optical qualities of the antireflective layer. The invention thereby provides more accurate etching of underlying layers during patterning operations. The invention is also capable of providing more accurate patterning of thin films by reducing inaccuracies caused by excessive etching of photoresist during patterning. Additionally, the film of the present invention may be patterned and used as a mask in the patterning of underlying layers.Type: GrantFiled: November 4, 1996Date of Patent: May 13, 2003Assignee: Applied Materials, Inc.Inventors: David Cheung, Joe Feng, Judy H. Huang, Wai-Fan Yau
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Patent number: 6562690Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: GrantFiled: June 13, 2000Date of Patent: May 13, 2003Assignee: Applied Materials, Inc.Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon
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Publication number: 20030064610Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: ApplicationFiled: August 27, 2002Publication date: April 3, 2003Applicant: Applied Materials, Inc.Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon
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Patent number: 6541282Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: GrantFiled: June 13, 2000Date of Patent: April 1, 2003Assignee: Applied Materials, Inc.Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon
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Patent number: 6537929Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.Type: GrantFiled: May 25, 2000Date of Patent: March 25, 2003Assignee: Applied Materials, Inc.Inventors: David Cheung, Wai-Fan Yau, Robert R. Mandal
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Publication number: 20030054667Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.Type: ApplicationFiled: August 22, 2002Publication date: March 20, 2003Applicant: Applied Materials, Inc.Inventors: Wai-Fan Yau, David Cheung, Nasreen Gazala Chopra, Yung-Cheng Lu, Robert Mandal, Farhad Moghadam
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Publication number: 20030032305Abstract: A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.Type: ApplicationFiled: August 7, 2001Publication date: February 13, 2003Applicant: Applied Materials, Inc.Inventors: Wai-Fan Yau, Ju-Hyung Lee, Nasreen Gazala Chopra, Tzu-Fang Huang, David Cheung, Farhad Moghadam, Kuo-Wei Liu, Yung-Cheng Lu, Ralf B. Willecke, Paul Matthews, Dian Sugiarto
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Patent number: 6511903Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.Type: GrantFiled: December 16, 1999Date of Patent: January 28, 2003Assignee: Applied Materials, Inc.Inventors: Wai-Fan Yau, David Cheung, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Yu
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Patent number: 6511909Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.Type: GrantFiled: August 9, 1999Date of Patent: January 28, 2003Assignee: Applied Materials, Inc.Inventors: Wai-Fan Yau, David Cheung, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Yu
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Patent number: 6448187Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.Type: GrantFiled: February 21, 2001Date of Patent: September 10, 2002Assignee: Applied Materials, Inc.Inventors: Wai-Fan Yau, David Cheung, Nasreen Gazala Chopra, Yung-Cheng Lu, Robert Mandal, Farhad Moghadam
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Publication number: 20020111042Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2.Type: ApplicationFiled: November 15, 2001Publication date: August 15, 2002Applicant: Applied Materials, Inc.Inventors: Wai-Fan Yau, David Cheung, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Yu
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Publication number: 20020084257Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.Type: ApplicationFiled: November 5, 2001Publication date: July 4, 2002Applicant: Applied Materials, Inc.Inventors: Claes H. Bjorkman, Melissa Min Yu, Hongqing Shan, David W. Cheung, Wai-Fan Yau, Kuowei Liu, Nasreen Gazala Chapra, Gerald Yin, Farhad K. Moghadam, Judy H. Huang, Dennis Yost, Betty Tang, Yunsang Kim
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Patent number: 6413583Abstract: A method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400° C. The low dielectric constant films contain residual carbon and are useful for gap fill layers, pre-metal dielectric layers, inter-metal dielectric layers, and shallow trench isolation dielectric layers in sub-micron devices. The hydroxyl compound can be prepared prior to deposition from water or an organic compound. The silicon oxide layers are preferably deposited at a substrate temperature less than about 40° C. onto a liner layer produced from the organosilicon compound to provide gap fill layers having a dielectric constant less than about 3.0.Type: GrantFiled: June 22, 1999Date of Patent: July 2, 2002Assignee: Applied Materials, Inc.Inventors: Farhad K. Moghadam, David W. Cheung, Ellie Yieh, Li-Qun Xia, Wai-Fan Yau, Chi-I Lang, Shin-Puu Jeng, Frederic Gaillard, Shankar Venkataraman, Srinivas Nemani