Patents by Inventor Wai-Fan Yau
Wai-Fan Yau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20020074309Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.Type: ApplicationFiled: November 5, 2001Publication date: June 20, 2002Applicant: Applied Materials, Inc.Inventors: Claes H. Bjorkman, Melissa Min Yu, Hongqing Shan, David W. Cheung, Wai-Fan Yau, Kuowei Liu, Nasreen Gazala Chapra, Gerald Yin, Farhad K. Moghadam, Judy H. Huang, Dennis Yost, Betty Tang, Yunsang Kim
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Publication number: 20020045361Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: ApplicationFiled: September 19, 2001Publication date: April 18, 2002Applicant: Applied Materials, Inc.Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon
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Patent number: 6348725Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: GrantFiled: February 10, 1999Date of Patent: February 19, 2002Assignee: Applied Materials, Inc.Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon
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Patent number: 6340435Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.Type: GrantFiled: June 9, 1999Date of Patent: January 22, 2002Assignee: Applied Materials, Inc.Inventors: Claes H. Bjorkman, Min Melissa Yu, Hongquing Shan, David W. Cheung, Wai-Fan Yau, Kuowei Liu, Nasreen Gazala Chapra, Gerald Yin, Farhad K. Moghadam, Judy H. Huang, Dennis Yost, Betty Tang, Yunsang Kim
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Publication number: 20020000670Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.Type: ApplicationFiled: December 30, 1999Publication date: January 3, 2002Inventors: WAI-FAN YAU, DAVID CHEUNG, SHIN-PUU JENG, KUOWEI LIU, YUNG-CHENG YU
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Patent number: 6324439Abstract: This invention provides a stable process for depositing films which include silicon and nitrogen, such as antireflective coatings of silicon oxynitride. Nitrogen is employed to permit lower flow rates of the process gas containing silicon, thereby reducing the deposition rate and providing better control of film thickness. Additionally, the use of nitrogen stabilizes the process, improving film uniformity, and provides a higher-quality film. The invention is capable of providing more accurate and easier fabrication of structures requiring uniformly thin films containing silicon, nitrogen, and, optionally, oxygen, such as antireflective coatings.Type: GrantFiled: May 16, 2000Date of Patent: November 27, 2001Assignee: Applied Materials, Inc.Inventors: David Cheung, Joe Feng, Madhu Deshpande, Wai-Fan Yau, Judy H. Huang
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Patent number: 6303523Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: GrantFiled: November 4, 1998Date of Patent: October 16, 2001Assignee: Applied Materials, Inc.Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon
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Publication number: 20010026849Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.Type: ApplicationFiled: February 21, 2001Publication date: October 4, 2001Applicant: Applied Materials, Inc.Inventors: Wai-Fan Yau, David Cheung, Nasreen Gazala Chopra, Yung-Cheng Lu, Robert Mandal, Farhad Moghadam
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Patent number: 6287990Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.Type: GrantFiled: September 29, 1998Date of Patent: September 11, 2001Assignee: Applied Materials, Inc.Inventors: David Cheung, Wai-Fan Yau, Robert R. Mandal
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Publication number: 20010005546Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: ApplicationFiled: February 10, 1999Publication date: June 28, 2001Applicant: Applied Materials, Inc.Inventors: DAVID CHEUNG, WAI-FAN YAU, ROBERT P. MANDAL, SHIN-PUU JENG, KUO-WEI LIU, YUNG-CHENG LU, MIKE BARNES, RALF B. WILLECKE, FARHAD MOGHADAM, TETSUYA ISHIKAWA, TZE POON
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Publication number: 20010004479Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: ApplicationFiled: November 4, 1998Publication date: June 21, 2001Inventors: DAVID CHEUNG, WAI-FAN YAU, ROBERT P. MANDAL, SHIN-PUU JENG, KUOWEI LIU, YUNG-CHENG LU, MIKE BARNES, RALF B. WILLECKE, FARHAD MOGHADAM, TETSUYA ISHIKOWA, TZE POON
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Patent number: 6245690Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.Type: GrantFiled: November 4, 1998Date of Patent: June 12, 2001Assignee: Applied Materials, Inc.Inventors: Wai-Fan Yau, David Cheung, Nasreen Gazala Chopra, Yung-Cheng Lu, Robert Mandal, Farhad Moghadam
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Patent number: 6209484Abstract: A method and apparatus for depositing an etch stop layer. The method begins by introducing process gases into a processing chamber in which a substrate is disposed. An etch stop layer is then deposited over the substrate. An overlying layer is then deposited over the etch stop layer. The etch stop layer substantially protects underlying materials from the etchants used in patterning the overlying layer. Moreover, the etch stop layer also possesses advantageous optical characteristics, making it suitable for use as an antireflective coating in the patterning of layers underlying the etch stop layer.Type: GrantFiled: April 17, 2000Date of Patent: April 3, 2001Assignee: Applied Materials, Inc.Inventors: Judy H. Huang, Wai-Fan Yau, David Cheung, Chan-Lon Yang
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Patent number: 6171945Abstract: A method and apparatus for depositing nano-porous low dielectric constant films by reaction of a silicon hydride containing compound or mixture optionally having thermally labile organic groups with a peroxide compound on the surface of a substrate. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a foam structure. The nano-porous silicon oxide based films are useful for filling gaps between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of 1,3,5-trisilanacyclohexane, bis(formyloxysilano)methane, or bis(glyoxylylsilano)methane and hydrogen peroxide followed by a cure/anneal that includes a gradual increase in temperature.Type: GrantFiled: October 22, 1998Date of Patent: January 9, 2001Assignee: Applied Materials, Inc.Inventors: Robert P. Mandal, David Cheung, Wai-Fan Yau
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Patent number: 6156149Abstract: This invention provides a method and apparatus for depositing a two-layer structure, including an antireflective coating and a dielectric layer, without any intervening process steps, such as a cleaning step. The invention is capable of providing more accurate and easier fabrication of structures by reducing inaccuracies caused by the reflection and refraction of incident radiant energy within a photoresist layer used in the patterning of the dielectric layer. Additionally, the antireflective coating of the present invention may also serve as an etch stop layer during the patterning of a layer formed over the antireflective coating.Type: GrantFiled: May 7, 1997Date of Patent: December 5, 2000Assignee: Applied Materials, Inc.Inventors: David Cheung, Judy H. Huang, Wai-Fan Yau
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Patent number: 6127262Abstract: A method and apparatus for depositing an etch stop layer. The method begins by introducing process gases into a processing chamber in which a substrate is disposed. An etch stop layer is then deposited over the substrate. An overlying layer is then deposited over the etch stop layer. The etch stop layer substantially protects underlying materials from the etchants used in patterning the overlying layer. Moreover, the etch stop layer also possesses advantageous optical characteristics, making it suitable for use as an antireflective coating in the patterning of layers underlying the etch stop layer.Type: GrantFiled: May 7, 1997Date of Patent: October 3, 2000Assignee: Applied Materials, Inc.Inventors: Judy H. Huang, Wai-Fan Yau, David Cheung, Chan-Lon Yang
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Patent number: 6083852Abstract: This invention provides a stable process for depositing films which include silicon and nitrogen, such as antireflective coatings of silicon oxynitride. Nitrogen is employed to permit lower flow rates of the process gas containing silicon, thereby reducing the deposition rate and providing better control of film thickness. Additionally, the use of nitrogen stabilizes the process, improving film uniformity, and provides a higher-quality film. The invention is capable of providing more accurate and easier fabrication of structures requiring uniformly thin films containing silicon, nitrogen, and, optionally, oxygen, such as antireflective coatings.Type: GrantFiled: May 7, 1997Date of Patent: July 4, 2000Assignee: Applied Materials, Inc.Inventors: David Cheung, Joe Feng, Madhu Deshpande, Wai-Fan Yau, Judy H. Huang
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Patent number: 6072227Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas at a low RF power level from 20-200 W. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH.sub.3 SiH.sub.3, and nitrous oxide, N.sub.2 O, at a pulsed RF power level from 50-200 W during 10-30% of the duty cycle.Type: GrantFiled: July 13, 1998Date of Patent: June 6, 2000Assignee: Applied Materials, Inc.Inventors: Wai-Fan Yau, David Cheung, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Yu
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Patent number: 6054379Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH.sub.3 SiH.sub.3, and N.sub.2 O.Type: GrantFiled: February 11, 1998Date of Patent: April 25, 2000Assignee: Applied Materials, Inc.Inventors: Wai-Fan Yau, David Cheung, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Yu
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Patent number: 6035803Abstract: A process for depositing a dielectric film having a reduced dielectric constant and desirable gap-fill characteristics, at an acceptable deposition rate is disclosed. A filmed deposited according to the present invention possesses acceptable stability, and avoids outgassing of the halogen dopant while resisting shrinkage.A carbon-based dielectric film is deposited on a substrate in a processing chamber by first flowing a process gas into the processing chamber. The process gas includes a gaseous source of carbon (such as methane (CH.sub.4)) and a gaseous source of a halogen (such as a source of fluorine (e.g., C.sub.4 F.sub.8)). A plasma is then formed from the process gas by applying a first and a second RF power component. Preferably, the second RF component has a frequency of between about 200 kHz and 2 MHz and a power level of between about 5 W and 75 W. The first and a second RF power components are applied for a period of time to deposit a halogen-doped carbon-based layer.Type: GrantFiled: September 29, 1997Date of Patent: March 14, 2000Assignee: Applied Materials, Inc.Inventors: Stuardo Robles, Wai-Fan Yau, Ping Xu, Kaushal Singh