Abstract: The present specification relates to a composition for preventing, alleviating or treating burnout syndrome, containing a natural extract as an active ingredient. According to one aspect of the present invention, the composition contains a ginseng fruit extract, and thus is useful for preventing, treating and alleviating burnout syndrome. In addition, according to one aspect of the present invention, the composition further contains ginseng fruit and one or more selected from the group consisting of red ginseng, Angelica gigas, Cornus officinalis, Cervi parvum corni, and Nigella sativa, so as to maximize the synergistic effect among two or more ingredients, thereby exhibiting excellent effects on the prevention, treatment and alleviation of burnout syndrome. Therefore, there is an advantage of making individuals and society mentally and physically healthy since burnout syndrome can be prevented, treated and alleviated, by using the composition of the present invention.

Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

Abstract: A heat pump system includes a cooling apparatus in which a coolant is circulated, a compressor to compress a refrigerant, a condenser connected to the compressor through a refrigerant line and configured to condense the refrigerant by heat-exchanging with the refrigerant and the coolant, an evaporator connected to the condenser through the refrigerant line and configured to evaporate the refrigerant by heat-exchanging with the refrigerant and the coolant, a gas injection device provided in the refrigerant line between the condenser and the evaporator and configured to selectively expand and flow the refrigerant and selectively supply some of the refrigerant to the compressor, a refrigerant connection line including a first end connected to the refrigerant line and a second end connected to the gas injection device between the compressor and the evaporator, and a chiller in the refrigerant connection line for adjusting a temperature of the coolant by heat-exchange.

Abstract: A nonvolatile magnetic memory device using a magnetic tunneling junction (MTJ) uses as a data storage unit an MTJ including a pinned magnetic layer, a nonmagnetic insulating layer, and a free magnetic layer which are sequentially stacked. The free magnetic layer includes at least one soft magnetic amorphous alloy layer in which zirconium (Zr) is added to a soft magnetic material formed of cobalt (Co) or a Co-based alloy.

Abstract: A nonvolatile magnetic memory device using a magnetic tunneling junction (MTJ) uses as a data storage unit an MTJ including a pinned magnetic layer, a nonmagnetic insulating layer, and a free magnetic layer which are sequentially stacked. The free magnetic layer includes at least one soft magnetic amorphous alloy layer in which zirconium (Zr) is added to a soft magnetic material formed of cobalt (Co) or a Co-based alloy.

Abstract: A magnetic random access memory (MRAM) includes a memory cell having a first transistor and a first magnetic tunneling junction (MTJ) layer, and a reference cell operable as a basis when reading data stored in the memory cell, the reference cell including second and third MTJ layers arranged in parallel to each other, and a second transistor connected in series to each of the second and third MTJ layers, the second transistor having a driving capability corresponding to twice a driving capability of the first transistor of the memory cell.

Abstract: Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.

Abstract: Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.

Abstract: A non-volatile memory device including a metal-insulator transition (MIT) material is provided. The non-volatile memory device includes a gate stack having a tunneling layer, a charge trap layer, a blocking layer and a gate electrode formed on a substrate, wherein at least one of the tunneling layer and the blocking layer is formed of an MIT (metal-insulator transition) material.

Abstract: A method of synthesizing carbon nanotubes including forming a solution including an organometallic compound containing catalyst particles and a solvent, adding at least one support to the solution, wherein the carbon nanotubes are synthesized on a surface of the at least one support, and applying radiation to the solution to which the at least one support is added.

Abstract: A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.

Abstract: A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.

Abstract: Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.

Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Abstract: A gas sensor and method thereof are provided. The example gas sensor may include first and second electrodes formed on a substrate, a carbon nanotube connecting the first and second electrodes on the substrate, a light source disposed above the carbon nanotube and an ampere meter measuring current flowing between the first and second electrodes.

Abstract: In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.

Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Abstract: Provided is a method of fabricating ZnO nanowires using a sonicator. The method includes (a) forming a Zn layer on a surface of a substrate, (b) patterning the Zn layer, and (c) forming ZnO nanowires on the Zn layer by immersing the substrate, on which the Zn layer is patterned in a mixed solution made of a solution containing Zn and a solution ionizing Zn, in a sonicator. ZnO nanowires may be formed at a predetermined location at room temperature according to the present invention.

Abstract: A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.

Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.