Abstract: Provided are a vertical carbon nanotube field effect transistor (CNTFET) and a method of manufacturing the same. The method includes: forming a first electrode on a substrate; forming a stack of multiple layers (“multi-layer stack”) on the first electrode, the multiple layers including first and second buried layers and a sacrificial layer interposed between the first and second buried layers; forming a vertical well into the multi-layer stack; growing a CNT within the well; forming a second electrode connected to the CNT on the multi-layer stack into which the well has been formed; forming a protective layer on the second electrode; removing the sacrificial layer and exposing the CNT between the first and second buried layers; forming a gate insulating layer on the exposed surface of the CNT; and forming a gate enclosing the CNT on the gate insulating layer.

Abstract: A method of isolating nucleic acid using a carbon nanotube is provided. The method includes contacting a mixture of a sample containing nucleic acid and a salt solution with a carbon nanotube to form a nucleic acid-carbon nanotube composite; washing the nucleic acid-carbon nanotube composite with a washing buffer; and eluting the nucleic acid from the nucleic acid-carbon nanotube composite.

Abstract: A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.

Abstract: In an apparatus for analyzing a magnetic random access memory (MRAM), and a method of analyzing an MRAM, the apparatus includes an MRAM mounting unit on which an MRAM is mounted, a magnetic field applying unit positioned around the MRAM mounting unit for applying an external magnetic field to the MRAM mounted on the MRAM mounting unit, a cell addressing unit for selecting one of a plurality of unit cells of the MRAM mounted on the MRAM mounting unit, a source measurement unit for applying an internal magnetic field to the selected unit cell of the MRAM or for measuring a resistance of the selected unit cell of the MRAM, and a computer unit for storing and for analyzing data regarding the measured resistance of the each of the plurality of unit cells of the MRAM.

Abstract: A magnetic RAM (MRAM) using a thermo-magnetic spontaneous Hall effect includes a MOS transistor formed on a substrate; a heating layer formed above the MOS transistor and connected to a source region of the MOS transistor; a memory layer having a data write area to which data is written, the data write area being formed on the heating means; a bit line formed on the data write area; an upper insulating film formed on the bit line and the memory layer; and a write line formed on the upper insulating film so that a magnetic field necessary for writing data is generated in at least the data write area of the memory layer. The MRAM writes or reads data using the fact that a spontaneous Hall voltage greatly differs according to the magnetization state of a memory layer, thereby providing the device a high data sensing margin.

Abstract: A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

Abstract: A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.

Abstract: A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

Abstract: In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.

Abstract: In an MRAM and method for fabricating the same, the MRAM includes a semiconductor substrate, a transistor formed on the semiconductor substrate, an interlayer dielectric formed on the semiconductor substrate to cover the transistor, and first and second MTJ cells formed in the interlayer dielectric to be coupled in parallel with a drain region of the transistor, wherein the first MTJ cell is coupled to a first bit line formed in the interlayer dielectric and the second MTJ cell is coupled to a second bit line formed in the interlayer dielectric, and wherein a data line is formed between the first MTJ cell and a gate electrode of the transistor to be perpendicular to the first bit line and the second bit line. The MRAM provides high integration density, sufficient sensing margin, high-speed operation and reduced noise, requires reduced current for recording data and eliminates a voltage offset.

Abstract: A magnetoresistive random access memory is provided. The magnetoresistive random access memory includes a first magnetic layer of which the direction of a magnetic vector is fixed, a second magnetic layer which is positioned in parallel with the first magnetic layer and of which the direction of a magnetic vector is reversible, and a non-magnetic layer interposed between the first and second magnetic layers, the second magnetic layer having an aspect ratio of 2 or less, a thickness of 5 nm or less, and a saturation magnetization of 800 emu/cm3 or less. The magnetoresistive random access memory has kink-free, magneto-resistance characteristics, thereby exhibiting high selectivity regardless of process capability.

Abstract: A magnetic random access memory using magnetic domain drag and giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) and a method of operating the same, wherein the magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer having two ends; a data input means electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output means electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, a magnetic random access memory according to the present invention has superior performance than one using a switching field to record data.

Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.

Abstract: An MRAM having improved integration density and ability to use a magnetic tunneling junction (MTJ) layer having a low MR ratio, and methods for manufacturing and driving the same, are disclosed. The MRAM includes a semiconductor substrate having a bipolar junction transistor (BJT) formed thereon, a bit line coupled to an emitter of the BJT, an MTJ layer coupled to the BJT, a word line coupled to the MTJ layer, a plate line coupled to the BJT so as to be spaced apart from the MTJ layer, and an interlayer dielectric formed between components of the MRAM, wherein the MTJ layer is coupled to a base and a collector of the BJT, the plate line is coupled to the collector, and an amplifying unit for amplifying a signal while data is read out from the MTJ layer is coupled to the bit line, thereby allowing precise reading of the data.

Abstract: A magnetic RAM (MRAM) using a thermo-magnetic spontaneous Hall effect includes a MOS transistor formed on a substrate; a heating means formed above the MOS transistor and connected to a source region of the MOS transistor; a memory layer having a data write area to which data is written, the data write area being formed on the heating means; a bit line formed on the data write area; an upper insulating film formed on the bit line and the memory layer; and a write line formed on the upper insulating film so that a magnetic field necessary for writing data is generated in at least the data write area of the memory layer. The MRAM writes or reads data using the fact that a spontaneous Hall voltage greatly differs according to the magnetization state of a memory layer, thereby providing the device a high data sensing margin.

Abstract: A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

Abstract: A high-density magnetic memory device and method of operating the same, wherein the high-density magnetic memory device includes a vertical transistor formed on a substrate, a magnetic memory element formed on the vertical transistor, the magnetic memory element using magnetic materials for storing data, a bit line connected to the vertical transistor via the magnetic memory element, a word line for writing over and across the bit line, and an insulating layer formed between the word line for writing and other components located below the word line for writing. According to the present invention, it is possible to fabricate a high-density magnetic memory device with a vertical transistor.

Abstract: A method of manufacturing a Heusler alloy thin film by co-sputtering is provided. The Heusler alloy thin film has a general structural formula of either X2YZ or XYZ and is deposited by co-sputtering using a deposition apparatus having a substrate placed on a substrate holder in a chamber and targets positioned on a target bracket spaced apart from the substrate. Components of the Heusler alloy thin film are placed on the target bracket as either single targets or binary alloy targets. Thus, it is easy to manufacture a Heusler alloy thin film having excellent magnetic characteristics.

Abstract: A magnetic random access memory using magnetic domain drag and giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) and a method of operating the same, wherein the magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer having two ends; a data input means electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output means electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, a magnetic random access memory according to the present invention has superior performance than one using a switching field to record data.