Abstract: A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.

Abstract: Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.

Abstract: A method and apparatus to control an operating clock frequency of a hard disk drive. The method includes analyzing a command workload, and changing the operating clock frequency of the hard disk drive based on an analysis result. Alternatively, the method includes measuring a time taken to receive a predetermined number of write/read commands and controlling the operating clock frequency of the hard disk drive based on a result of a comparison of the measured time with at least one reference value. An operating clock frequency control block included in the hard disk drive executes the method.

Abstract: An Electronic Paper Display (EPD) includes a central processing unit (CPU), an EPD screen, a first storage storing applications, an EPD controller. The EPD controller is configured for running the stored software applications and controlling the EPD screen to display visual information. The EPD further includes a second storage and a temporary controller. The second storage is configured for storing files capable of being displayed on the EPD screen during the process of booting up the EPD. The temporary controller is configured for determining whether the process of initializing the CPU is finished during the process of booting up the EPD, and further configured for starting the EPD controller, copying the files from the second storage, and delivering the files to the EPD controller to display if the process of initializing the CPU is not finished.

Abstract: A method of preventing data loss in a hard disk drive comprises detecting a write error, performing a write retry operation upon detection of the write error, and storing write retry information in a non-volatile memory before performing the write retry operation. The write retry information comprises location information and data for a sector to be rewritten in the write retry operation.

Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Abstract: A gas sensor and method thereof are provided. The example gas sensor may include first and second electrodes formed on a substrate, a carbon nanotube connecting the first and second electrodes on the substrate, a light source disposed above the carbon nanotube and an ampere meter measuring current flowing between the first and second electrodes.

Abstract: In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.

Abstract: A system, method, and apparatus are provided for establishing a wireless network connection between a mobile terminal and an electronic apparatus by using a near field communication network. At least one electronic apparatus is connected to the near field communication network. A mobile terminal is connected to the near field communication network, exchanges information with the at least one electronic apparatus for a wireless communication network connection through the connected near field communication network, and establishes the wireless communication network connection with the at least one electronic apparatus based on the exchanged information.

Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Abstract: Provided is a method of fabricating ZnO nanowires using a sonicator. The method includes (a) forming a Zn layer on a surface of a substrate, (b) patterning the Zn layer, and (c) forming ZnO nanowires on the Zn layer by immersing the substrate, on which the Zn layer is patterned in a mixed solution made of a solution containing Zn and a solution ionizing Zn, in a sonicator. ZnO nanowires may be formed at a predetermined location at room temperature according to the present invention.

Abstract: A controller for use in a disk drive includes a comparison signal generator for comparing a period of time when a write unsafe signal output from a pre-amplifier is activated with a reference period of time to generate a comparison signal; a write failure signal generator for generating a write failure signal according to a write gate signal and the comparison signal; and a logger for logging at least one of the period of time when a write unsafe signal output from a pre-amplifier is activated and the number of times of activations of the comparison signal.

Abstract: A clock frequency adjusting method capable of reducing power consumption without reducing a response speed for a command output from a host in an idle mode is provided. In the clock frequency adjusting method, a central processing unit (CPU) generates a detection signal according to whether an interrupt signal is activated, and a frequency adjusting circuit provides a clock signal having a first frequency or a second frequency higher than the first frequency to the CPU in response to the detection signal.

Abstract: A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.

Abstract: An apparatus and method of controlling power consumption of a digital processing device. The apparatus and method determine whether a power management mode of the digital processing device is enabled. When a power management mode is enabled, the power is reduced to at least one portion of the digital processing device to fully power one or more memory devices of the digital processing device to a normal operation ready state. When the power management mode is disabled, power is provided to the one or more memory devices of the digital processing device to the normal operation ready state.

Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Abstract: A method of growing single-walled carbon nanotubes. The method may include supplying at least one of an oxidant and an etchant into a vacuum chamber and supplying a source gas into the vacuum chamber to grow carbon nanotubes on a substrate in an oxidant or an etchant atmosphere. The carbon nanotubes may be grown in an H2O plasma atmosphere. The carbon nanotubes may be grown at a temperature less than 500° C.

Abstract: A method for manufacturing ZnO nanowires with a small diameter and increased length and a device comprising the same. The manufacturing method includes: forming a ZnO seed layer containing a hydroxyl group on a substrate; and growing ZnO nanowires on the ZnO seed layer containing the hydroxyl group. Preferably, the ZnO seed layer is a thin ZnO seed layer containing more than 50% of the hydroxyl group.

Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.

Abstract: A method is provided for synchronizing time between nodes in a wireless communication system. A reference node transmits a first packet to a correspondent node. Upon receiving the first packet, the correspondent node transmits a second packet with a reception time of the first packet recorded therein, to the reference node. Upon receiving the second packet, the reference node calculates a forward delay time using a transmission time and the reception time of the first packet. The correspondent node receives a third packet with the forward delay time from the reference node, and calculates a reverse delay time. The correspondent node calculates an offset value for the synchronization using the forward delay time and the reverse delay time.