Patents by Inventor Wataru Ito
Wataru Ito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200014847Abstract: Processing for judging whether a face is included in a frame is performed, in a predetermined interval, on each of frames included in a moving image of a subject, displayed on a monitor, until the judgment becomes positive. If it is judged that a face is included in a frame, the facial position is detected in the frame, and stored. Then, judgment is made as to whether a face is included in the next frame after predetermined time. If the judgment is positive, the facial position is detected. The previously stored facial position is replaced by the newly detected facial position, and the newly detected facial position is stored. These processes are repeated until photographing operation is performed by operating a release unit.Type: ApplicationFiled: September 20, 2019Publication date: January 9, 2020Applicant: FUJIFILM CorporationInventor: Wataru ITO
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Patent number: 10484328Abstract: A browsing service of messages exchanged through posts and responses to the posts among multiple users is provided in a message-browsing system. A terminal device includes an assigning unit assigning user images corresponding to multiple specific users who are a subset or all of the multiple users to respective ones of a number of reference positions that is equal to the number of the user images on a screen according to a predetermined rule, a position determining unit determining the reference positions assigned to the user images corresponding to the multiple specific users as display positions displaying the respective user images, and a position changing unit changing a display position of a user image corresponding to a user responding to a post another user has contributed to a position close to a user image corresponding to another user who has contributed the post.Type: GrantFiled: December 23, 2014Date of Patent: November 19, 2019Assignee: KONAMI DIGITAL ENTERTAINMENT CO., LTD.Inventors: Koki Kimura, Erika Nakamura, Takashi Suenaga, Takashi Hamano, Wataru Ito, Fumiaki Oshita
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Patent number: 10462357Abstract: Processing for judging whether a face is included in a frame is performed, in a predetermined interval, on each of frames included in a moving image of a subject, displayed on a monitor, until the judgment becomes positive. If it is judged that a face is included in a frame, the facial position is detected in the frame, and stored. Then, judgment is made as to whether a face is included in the next frame after predetermined time. If the judgment is positive, the facial position is detected. The previously stored facial position is replaced by the newly detected facial position, and the newly detected facial position is stored. These processes are repeated until photographing operation is performed by operating a release unit.Type: GrantFiled: September 12, 2018Date of Patent: October 29, 2019Assignee: FUJIFILM CorporationInventor: Wataru Ito
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Patent number: 10450672Abstract: The object is to produce with good reproducibility an epitaxial silicon carbide wafer having a high quality silicon carbide single crystal thin film with little step bunching. To achieve this object, for etching the silicon carbide single crystal substrate in the epitaxial growth furnace, hydrogen carrier gas and silicon-based material gas are used. After the etching treatment is finished as well, the epitaxial growth conditions are changed in the state in the state supplying these gases. When the conditions stabilize, a carbon-based material gas is introduced for epitaxial growth.Type: GrantFiled: July 16, 2015Date of Patent: October 22, 2019Assignee: SHOWA DENKO K.K.Inventors: Takashi Aigo, Wataru Ito, Tatsuo Fujimoto
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Patent number: 10435813Abstract: The present invention provides a method of epitaxial growth of an SiC thin film by the thermal CVD process wherein it is possible to improve the in-plane uniformity of the doping density and possible to grow an SiC thin film by a uniform thickness. This method is an epitaxial growth method for silicon carbide characterized by comprising adjusting a ratio of the hydrocarbon gas and silicon feedstock gas so as to become, by C/Si ratio, 0.5 to 1.5 in range, making the hydrocarbon gas contact a hydrocarbon decomposition catalyst heated to 1000° C. to 1200° C. so as to make at least part of the hydrocarbon gas break down into carbon and hydrogen, and supplying carbon contained in the hydrocarbon gas and silicon contained in the silicon feedstock gas to the silicon carbide single crystal substrate.Type: GrantFiled: February 12, 2016Date of Patent: October 8, 2019Assignee: SHOWA DENKO K.K.Inventors: Wataru Ito, Takashi Aigo, Tatsuo Fujimoto
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Patent number: 10407584Abstract: A water-based ink includes a pigment, and water, in which a viscosity at 20° C. is in a range of 2 mPa·s to 7 mPa·s, and a yield value at 20° C. is less than 0.2 mPa, and the yield value at 20° C. when evaporating 25% of the water is less than 0.8 mPa.Type: GrantFiled: May 30, 2017Date of Patent: September 10, 2019Assignee: Seiko Epson CorporationInventors: Yusuke Mizutaki, Tomohito Nakano, Wataru Ito, Atsushi Muto, Hiroshige Owaki
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Publication number: 20190197313Abstract: An image monitoring system includes: a reference image generation unit generating a reference image serving as a reference image, based on an input image; a foreground extraction unit detecting, from the input image, a foreground region different from the reference image; a stationary region extraction unit extracting a stationary region from the foreground region; a feature quantity extraction unit extracting a feature quantity of the stationary region; a feature quantity recording unit recording feature quantities as a function of time; a stationary object detection unit clustering pixels, recorded feature quantities of which meet predetermined criteria, and detecting a stationary object; a left object determination unit determining whether the stationary object is a left object, based on a feature quantity of the stationary object and evaluation of the surrounding environment; and a left object management unit managing attributes of left objects, and issuing a report when a certain condition is met.Type: ApplicationFiled: September 21, 2017Publication date: June 27, 2019Inventors: Kazunari IWANAGA, Wataru ITO
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Publication number: 20190180447Abstract: The purpose of the present invention is to provide a technology which adaptively switches video analysis methods according to a congestion situation within a video, and which carries out a suitable video analysis by a limited computational volume. Provided is an image processing device 100, wherein a congestion estimation unit 102 estimates a congestion situation within a video which is acquired from an image input unit 101. A control unit 103 switches methods for video analysis according to the congestion situation. In a situation of low congestion, an image analysis unit for use in normal situations 105 carries out the video analysis by a basic method. In a situation of high congestion, an image analysis unit for use in congested situations 106 carries out a high-precision video analysis, such as an analysis which spans a plurality of frames.Type: ApplicationFiled: September 21, 2017Publication date: June 13, 2019Inventors: Yuichiro KOMIYA, Muneaki YAMAGUCHI, Hiroaki NAKAKITA, Kazunari IWANAGA, Junichi TOGASHI, Yohei AKIMOTO, Masaya OKADA, Atsushi SASSA, Wataru ITO
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Patent number: 10282622Abstract: A system detects a candidate for an object which intrudes based on images of a visible light camera and a far-infrared camera that monitor the sea, further derives a size, a velocity, an intrusion direction, and linearity, and identifies the object to some extent. Also, the system distinguishes between a boat, a human, and a floating matter based on the luminances or the like in a far-infrared image. In addition, the system observes the periodicity of normal waves on the sea surface at a location without any object by performing the Fourier transform on the image. The accuracy of identification of an object is improved based on the correlation between the motion of waves in a normal state and the motion of the object.Type: GrantFiled: December 9, 2016Date of Patent: May 7, 2019Assignee: Hitachi Kokusai Electric Inc.Inventors: Junichi Togashi, Wataru Ito, Masaya Okada, Kazunari Iwanaga, Miyuki Fujii
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Publication number: 20190065859Abstract: A system detects a candidate for an object which intrudes based on images of a visible light camera and a far-infrared camera that monitor the sea, further derives a size, a velocity, an intrusion direction, and linearity, and identifies the object to some extent. Also, the system distinguishes between a boat, a human, and a floating matter based on the luminances or the like in a far-infrared image. In addition, the system observes the periodicity of normal waves on the sea surface at a location without any object by performing the Fourier transform on the image. The accuracy of identification of an object is improved based on the correlation between the motion of waves in a normal state and the motion of the object.Type: ApplicationFiled: December 9, 2016Publication date: February 28, 2019Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Junichi TOGASHI, Wataru ITO, Masaya OKADA, Kazunari IWANAGA, Miyuki FUJII
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Publication number: 20190028636Abstract: Processing for judging whether a face is included in a frame is performed, in a predetermined interval, on each of frames included in a moving image of a subject, displayed on a monitor, until the judgment becomes positive. If it is judged that a face is included in a frame, the facial position is detected in the frame, and stored. Then, judgment is made as to whether a face is included in the next frame after predetermined time. If the judgment is positive, the facial position is detected. The previously stored facial position is replaced by the newly detected facial position, and the newly detected facial position is stored. These processes are repeated until photographing operation is performed by operating a release unit.Type: ApplicationFiled: September 12, 2018Publication date: January 24, 2019Applicant: FUJIFILM CorporationInventor: Wataru ITO
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Patent number: 10181168Abstract: Disclosed is a system whereby it is possible to verify the safety of a person even if the person is not aware that the person is being searched for as a missing person. In this system, each verification requesting person who is searching for another person registers, in a database of a portal server (4), a set comprising a feature value of the face of the searched-for person and personal information (e.g., telephone number) about the searched-for person or the verification requesting person. A field server (2) constantly compares feature values of captured face images with the database, and if a close match is found between the feature value of a captured face image and the stored feature value of the face of a person, the field server (2) presents the registered personal information associated with that person to the person from which the captured face image was derived and requests verification from the latter person.Type: GrantFiled: March 31, 2014Date of Patent: January 15, 2019Assignee: HITACHI KOKUSA1 ELECTRIC, INC.Inventor: Wataru Ito
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Patent number: 10110803Abstract: Processing for judging whether a face is included in a frame is performed, in a predetermined interval, on each of frames included in a moving image of a subject, displayed on a monitor, until the judgment becomes positive. If it is judged that a face is included in a frame, the facial position is detected in the frame, and stored. Then, judgment is made as to whether a face is included in the next frame after predetermined time. If the judgment is positive, the facial position is detected. The previously stored facial position is replaced by the newly detected facial position, and the newly detected facial position is stored. These processes are repeated until photographing operation is performed by operating a release unit.Type: GrantFiled: June 5, 2017Date of Patent: October 23, 2018Assignee: FUJIFILM CorporationInventor: Wataru Ito
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Publication number: 20180266012Abstract: The present invention provides a method of epitaxial growth of an SiC thin film by the thermal CVD process wherein it is possible to improve the in-plane uniformity of the doping density and possible to grow an SiC thin film by a uniform thickness. This method is an epitaxial growth method for silicon carbide characterized by comprising adjusting a ratio of the hydrocarbon gas and silicon feedstock gas so as to become, by C/Si ratio, 0.5 to 1.5 in range, making the hydrocarbon gas contact a hydrocarbon decomposition catalyst heated to 1000° C. to 1200° C. so as to make at least part of the hydrocarbon gas break down into carbon and hydrogen, and supplying carbon contained in the hydrocarbon gas and silicon contained in the silicon feedstock gas to the silicon carbide single crystal substrate.Type: ApplicationFiled: February 12, 2016Publication date: September 20, 2018Applicant: SHOWA DENKO K.K.Inventors: Wataru ITO, Takashi AIGO, Tatsuo FUJIMOTO
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Publication number: 20180216251Abstract: A method for producing an epitaxial silicon carbide single crystal wafer comprised of a silicon carbide single crystal substrate having a small off angle on which a high quality silicon carbide single crystal film with little basal plane dislocations is provided, that is, a method for producing an epitaxial silicon carbide single crystal wafer epitaxially growing silicon carbide on a silicon carbide single crystal substrate using a thermal CVD method, comprising supplying an etching gas inside the epitaxial growth reactor to etch the surface of the silicon carbide single crystal substrate so that the arithmetic average roughness Ra value becomes 0.5 nm to 3.0 nm, then starting epitaxial growth to convert 95% or more of the basal plane dislocations at the surface of the silicon carbide single crystal substrate to threading edge dislocations.Type: ApplicationFiled: July 29, 2016Publication date: August 2, 2018Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATIONInventors: Takashi AIGO, Wataru ITO, Tatsuo FUJIMOTO
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Patent number: 9957639Abstract: The present invention provides a method for producing an epitaxial silicon carbide wafer comprising epitaxially growing SiC on an SiC substrate to produce an epitaxial SiC wafer during which further reducing stacking faults and comet defects than the conventional technologies to obtain an epitaxial SiC wafer having a high quality epitaxial film. The method for producing the epitaxial silicon carbide wafer is characterized in that a pre-growth atmosphere gas flowing into the growth furnace before the start of epitaxial growth contains hydrogen gas and has a balance of an inert gas and unavoidable impurities, and the hydrogen gas is contained in 0.1 to 10.0 vol % with respect to the inert gas.Type: GrantFiled: February 27, 2015Date of Patent: May 1, 2018Assignee: NIPPON STEEL & SUMITOMO METAL CORPORATIONInventors: Takashi Aigo, Wataru Ito, Tatsuo Fujimoto
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Patent number: 9954812Abstract: A message-browsing system includes an image storage unit storing user images corresponding to respective multiple users, a motion storage unit storing pieces of motion information defining motions of the images associated with types of feelings or forms of posts, a keyword storage unit storing keywords according to the types of feelings, a determination unit determining whether or not any of the types can be identified from a sentence of a post by determining whether the sentence includes any of the keywords stored in the keyword storage unit, and a setting unit, when a type of feelings can be identified, selecting one of pieces of motion information that corresponds to the identified type of feelings, selecting one piece of motion information that corresponds to a form of the post when the type cannot be identified, and setting a motion of a user image corresponding to the user who has contributed the post based on the selected piece of motion information.Type: GrantFiled: December 24, 2014Date of Patent: April 24, 2018Assignee: KONAMI DIGITAL ENTERTAINMENT CO., LTD.Inventors: Koki Kimura, Erika Nakamura, Takashi Suenaga, Takashi Hamano, Hiroyasu Orui, Wataru Ito, Fumiaki Oshita, Masaki Shimizu
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Patent number: 9877011Abstract: An image display apparatus for converting an image into a virtual viewpoint image so that the image of an object is not distorted.Type: GrantFiled: March 14, 2014Date of Patent: January 23, 2018Assignee: Hitachi Kokusai Electric Inc.Inventors: Miyuki Fujii, Wataru Ito
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Publication number: 20170369723Abstract: A water-based ink includes a pigment, and water, in which a viscosity at 20° C. is in a range of 2 mPa·s to 7 mPa·s, and a yield value at 20° C. is less than 0.2 mPa, and the yield value at 20° C. when evaporating 25% of the water is less than 0.8 mPa.Type: ApplicationFiled: May 30, 2017Publication date: December 28, 2017Inventors: Yusuke MIZUTAKI, Tomohito NAKANO, Wataru ITO, Atsushi MUTO, Hiroshige OWAKI
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Publication number: 20170365463Abstract: An epitaxial silicon carbide single crystal wafer having a small depth of shallow pits and having a high quality silicon carbide single crystal thin film and a method for producing the same are provided. The epitaxial silicon carbide single crystal wafer according to the present invention is produced by forming a buffer layer made of a silicon carbide epitaxial film having a thickness of 1 ?m or more and 10 ?m or less by adjusting the ratio of the number of carbon to that of silicon (C/Si ratio) contained in a silicon-based and carbon-based material gas to 0.5 or more and 1.0 or less, and then by forming a drift layer made of a silicon carbide epitaxial film at a growth rate of 15 ?m or more and 100 ?m or less per hour. According to the present invention, the depth of the shallow pits observed on the surface of the drift layer can be set at 30 nm or less.Type: ApplicationFiled: February 16, 2016Publication date: December 21, 2017Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATIONInventors: Takashi AIGO, Wataru ITO, Tatsuo FUJIMOTO