Patents by Inventor Wataru Ito

Wataru Ito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180266012
    Abstract: The present invention provides a method of epitaxial growth of an SiC thin film by the thermal CVD process wherein it is possible to improve the in-plane uniformity of the doping density and possible to grow an SiC thin film by a uniform thickness. This method is an epitaxial growth method for silicon carbide characterized by comprising adjusting a ratio of the hydrocarbon gas and silicon feedstock gas so as to become, by C/Si ratio, 0.5 to 1.5 in range, making the hydrocarbon gas contact a hydrocarbon decomposition catalyst heated to 1000° C. to 1200° C. so as to make at least part of the hydrocarbon gas break down into carbon and hydrogen, and supplying carbon contained in the hydrocarbon gas and silicon contained in the silicon feedstock gas to the silicon carbide single crystal substrate.
    Type: Application
    Filed: February 12, 2016
    Publication date: September 20, 2018
    Applicant: SHOWA DENKO K.K.
    Inventors: Wataru ITO, Takashi AIGO, Tatsuo FUJIMOTO
  • Publication number: 20180216251
    Abstract: A method for producing an epitaxial silicon carbide single crystal wafer comprised of a silicon carbide single crystal substrate having a small off angle on which a high quality silicon carbide single crystal film with little basal plane dislocations is provided, that is, a method for producing an epitaxial silicon carbide single crystal wafer epitaxially growing silicon carbide on a silicon carbide single crystal substrate using a thermal CVD method, comprising supplying an etching gas inside the epitaxial growth reactor to etch the surface of the silicon carbide single crystal substrate so that the arithmetic average roughness Ra value becomes 0.5 nm to 3.0 nm, then starting epitaxial growth to convert 95% or more of the basal plane dislocations at the surface of the silicon carbide single crystal substrate to threading edge dislocations.
    Type: Application
    Filed: July 29, 2016
    Publication date: August 2, 2018
    Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Takashi AIGO, Wataru ITO, Tatsuo FUJIMOTO
  • Patent number: 9957639
    Abstract: The present invention provides a method for producing an epitaxial silicon carbide wafer comprising epitaxially growing SiC on an SiC substrate to produce an epitaxial SiC wafer during which further reducing stacking faults and comet defects than the conventional technologies to obtain an epitaxial SiC wafer having a high quality epitaxial film. The method for producing the epitaxial silicon carbide wafer is characterized in that a pre-growth atmosphere gas flowing into the growth furnace before the start of epitaxial growth contains hydrogen gas and has a balance of an inert gas and unavoidable impurities, and the hydrogen gas is contained in 0.1 to 10.0 vol % with respect to the inert gas.
    Type: Grant
    Filed: February 27, 2015
    Date of Patent: May 1, 2018
    Assignee: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Takashi Aigo, Wataru Ito, Tatsuo Fujimoto
  • Patent number: 9954812
    Abstract: A message-browsing system includes an image storage unit storing user images corresponding to respective multiple users, a motion storage unit storing pieces of motion information defining motions of the images associated with types of feelings or forms of posts, a keyword storage unit storing keywords according to the types of feelings, a determination unit determining whether or not any of the types can be identified from a sentence of a post by determining whether the sentence includes any of the keywords stored in the keyword storage unit, and a setting unit, when a type of feelings can be identified, selecting one of pieces of motion information that corresponds to the identified type of feelings, selecting one piece of motion information that corresponds to a form of the post when the type cannot be identified, and setting a motion of a user image corresponding to the user who has contributed the post based on the selected piece of motion information.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: April 24, 2018
    Assignee: KONAMI DIGITAL ENTERTAINMENT CO., LTD.
    Inventors: Koki Kimura, Erika Nakamura, Takashi Suenaga, Takashi Hamano, Hiroyasu Orui, Wataru Ito, Fumiaki Oshita, Masaki Shimizu
  • Patent number: 9877011
    Abstract: An image display apparatus for converting an image into a virtual viewpoint image so that the image of an object is not distorted.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: January 23, 2018
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Miyuki Fujii, Wataru Ito
  • Publication number: 20170369723
    Abstract: A water-based ink includes a pigment, and water, in which a viscosity at 20° C. is in a range of 2 mPa·s to 7 mPa·s, and a yield value at 20° C. is less than 0.2 mPa, and the yield value at 20° C. when evaporating 25% of the water is less than 0.8 mPa.
    Type: Application
    Filed: May 30, 2017
    Publication date: December 28, 2017
    Inventors: Yusuke MIZUTAKI, Tomohito NAKANO, Wataru ITO, Atsushi MUTO, Hiroshige OWAKI
  • Publication number: 20170365463
    Abstract: An epitaxial silicon carbide single crystal wafer having a small depth of shallow pits and having a high quality silicon carbide single crystal thin film and a method for producing the same are provided. The epitaxial silicon carbide single crystal wafer according to the present invention is produced by forming a buffer layer made of a silicon carbide epitaxial film having a thickness of 1 ?m or more and 10 ?m or less by adjusting the ratio of the number of carbon to that of silicon (C/Si ratio) contained in a silicon-based and carbon-based material gas to 0.5 or more and 1.0 or less, and then by forming a drift layer made of a silicon carbide epitaxial film at a growth rate of 15 ?m or more and 100 ?m or less per hour. According to the present invention, the depth of the shallow pits observed on the surface of the drift layer can be set at 30 nm or less.
    Type: Application
    Filed: February 16, 2016
    Publication date: December 21, 2017
    Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Takashi AIGO, Wataru ITO, Tatsuo FUJIMOTO
  • Patent number: 9815311
    Abstract: An ink jet recording method for carrying out recording on a recording medium which is formed of a vinyl chloride-based resin by discharging a solvent-based ink from an ink jet head, in which the recording medium satisfies (1): an FT-IR peak wavenumber is less than 2924 cm?1 (2): a contraction rate before and after leaving at 60° C. for 3 hours is less than 1.8% (3): none of a phthalate ester-based plasticizer, a phosphate ester-based plasticizer, and a fatty acid ester-based plasticizer are included.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: November 14, 2017
    Assignee: Seiko Epson Corporation
    Inventor: Wataru Ito
  • Publication number: 20170272646
    Abstract: Processing for judging whether a face is included in a frame is performed, in a predetermined interval, on each of frames included in a moving image of a subject, displayed on a monitor, until the judgment becomes positive. If it is judged that a face is included in a frame, the facial position is detected in the frame, and stored. Then, judgment is made as to whether a face is included in the next frame after predetermined time. If the judgment is positive, the facial position is detected. The previously stored facial position is replaced by the newly detected facial position, and the newly detected facial position is stored. These processes are repeated until photographing operation is performed by operating a release unit.
    Type: Application
    Filed: June 5, 2017
    Publication date: September 21, 2017
    Applicant: FUJIFILM Corporation
    Inventor: Wataru ITO
  • Patent number: 9712742
    Abstract: Processing for judging whether a face is included in a frame is performed, in a predetermined interval, on each of frames included in a moving image of a subject, displayed on a monitor, until the judgment becomes positive. If it is judged that a face is included in a frame, the facial position is detected in the frame, and stored. Then, judgment is made as to whether a face is included in the next frame after predetermined time. If the judgment is positive, the facial position is detected. The previously stored facial position is replaced by the newly detected facial position, and the newly detected facial position is stored. These processes are repeated until photographing operation is performed by operating a release unit.
    Type: Grant
    Filed: December 4, 2014
    Date of Patent: July 18, 2017
    Assignee: FUJIFILM Corporation
    Inventor: Wataru Ito
  • Patent number: 9704259
    Abstract: A people counting device includes an edge extracting unit configured to extract an edge from a planar image of a target area, and a circle candidate detecting unit configured to detect a circle candidate included in the planar image based on the edge extracted by the edge extracting unit. The people counting device further includes a person determining unit configured to calculate a brightness gradient for each edge pixel constituting an edge of each circle candidate detected by the circle candidate detecting unit and determine that a circle candidate whose uniformity of brightness gradients for the edge pixels of the circle candidate is higher than a reference is a person's head portion, and a people counting unit configured to count the number of circle candidates determined to be a person's head portion by the person determining unit.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: July 11, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventor: Wataru Ito
  • Publication number: 20170159208
    Abstract: The object is to produce with good reproducibility an epitaxial silicon carbide wafer having a high quality silicon carbide single crystal thin film with little step bunching. To achieve this object, for etching the silicon carbide single crystal substrate in the epitaxial growth furnace, hydrogen carrier gas and silicon-based material gas are used. After the etching treatment is finished as well, the epitaxial growth conditions are changed in the state in the state supplying these gases. When the conditions stabilize, a carbon-based material gas is introduced for epitaxial growth.
    Type: Application
    Filed: July 16, 2015
    Publication date: June 8, 2017
    Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Takashi AIGO, Wataru ITO, Tatsuo FUJIMOTO
  • Publication number: 20170136796
    Abstract: An ink jet recording method for carrying out recording on a recording medium which is formed of a vinyl chloride-based resin by discharging a solvent-based ink from an ink jet head, in which the recording medium satisfies (1): an FT-IR peak wavenumber is less than 2924 cm?1 (2): a contraction rate before and after leaving at 60° C. for 3 hours is less than 1.8% (3): none of a phthalate ester-based plasticizer, a phosphate ester-based plasticizer, and a fatty acid ester-based plasticizer are included.
    Type: Application
    Filed: September 14, 2016
    Publication date: May 18, 2017
    Inventor: Wataru ITO
  • Publication number: 20170109852
    Abstract: Disclosed is a system whereby it is possible to verify the safety of a person even if the person is not aware that the person is being searched for as a missing person. In this system, each verification requesting person who is searching for another person registers, in a database of a portal server (4), a set comprising a feature value of the face of the searched-for person and personal information (e.g., telephone number) about the searched-for person or the verification requesting person. A field server (2) constantly compares feature values of captured face images with the database, and if a close match is found between the feature value of a captured face image and the stored feature value of the face of a person, the field server (2) presents the registered personal information associated with that person to the person from which the captured face image was derived and requests verification from the latter person.
    Type: Application
    Filed: March 31, 2014
    Publication date: April 20, 2017
    Inventor: Wataru ITO
  • Patent number: 9589181
    Abstract: Provided is a suspicious person detection method. First, a normal similar facial image search is carried out. Next, facial images, which are detected automatically from the input images and specified manually, are specified to be determined. Next, similar faces are searched for limited time on a time axis on the database. Next, the number of search results that distance between the features is lower than predetermined value is calculated and it is determined that the number of appearances is large and a possibility of a prowling person is high if the number of cases is large, and otherwise a possibility of prowling person is low. Last, a similarity between a facial image of a pre-registered residents and a facial image of a person whose number is large is calculated, and it is re-determined that the person is residents if the similarity is high, regardless of the determination.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: March 7, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Wataru Ito, Yohei Akimoto
  • Patent number: 9443150
    Abstract: A technique is proposed for enabling stable detection of an object even when the contrast of an image is lowered overall or partially. A preprocessing section 12 is added to the upstream stage of an object detecting processing section 13, and provides an obtained corrected image (image obtained by subjecting an input image to contrast enhancement) as an input image for the object detecting processing section 13. This facilitates the detection of the object even when the contrast of the entire screen is lowered due to fog or rain. Furthermore, the object detecting processing section 13 detects the object by using not only the corrected image from the preprocessing section 12 but also correction characteristic information 23 containing image characteristics regarding the correction (contrast enhancement). This attempts to reduce an influence of noises enhanced by the contrast enhancement.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: September 13, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Miyuki Fujii, Wataru Ito
  • Publication number: 20160251775
    Abstract: The present invention provides a method for producing an epitaxial silicon carbide wafer comprising epitaxially growing SiC on an SiC substrate to produce an epitaxial SiC wafer during which further reducing stacking faults and comet defects than the conventional technologies to obtain an epitaxial SiC wafer having a high quality epitaxial film. The method for producing the epitaxial silicon carbide wafer is characterized in that a pre-growth atmosphere gas flowing into the growth furnace before the start of epitaxial growth contains hydrogen gas and has a balance of an inert gas and unavoidable impurities, and the hydrogen gas is contained in 0.1 to 10.0 vol % with respect to the inert gas.
    Type: Application
    Filed: February 27, 2015
    Publication date: September 1, 2016
    Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Takashi AIGO, Wataru ITO, Tatsuo FUJIMOTO
  • Patent number: 9420236
    Abstract: It is an object of the present invention to provide a monitoring system that captures and inputs video images of a crowd with a surveillance camera for detecting normal and/or various abnormal states.
    Type: Grant
    Filed: March 9, 2011
    Date of Patent: August 16, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Miyako Hotta, Masanori Miyoshi, Wataru Ito
  • Patent number: 9379588
    Abstract: A stator of a rotating electrical machine includes a stator core, plural stator coil groups constituting plural phases, plural pieces of interphase insulation paper for insulation of coils belonging to different phases, and plural connecting strips formed integrally with the interphase insulation paper pieces. Each interphase insulation paper piece has ends inserted between coil ends of unit coils belonging to an identical phase thereby to function as interphase insulation paper for insulation of coils belonging to the identical phase. Each interphase insulation paper piece for insulation of coils belonging to the different phases, functioning as the interphase insulation paper piece for insulation of coils of the identical phase, insulates between coil ends of the first unit coils of respective first and second series circuits constituting the inner circumference side phase and a coil end of the unit coil constituting the outer circumference side phase.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: June 28, 2016
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Industrial Products Manufacturing Corporation
    Inventors: Masakatsu Matsubara, Yoichi Seo, Takashi Hanai, Wataru Ito
  • Publication number: 20160065944
    Abstract: An image display apparatus for converting an image into a virtual viewpoint image so that the image of an object is not distorted.
    Type: Application
    Filed: March 14, 2014
    Publication date: March 3, 2016
    Inventors: Miyuki FUJII, Wataru ITO