Abstract: Anisotropic pressure panels are disclosed. The pressure panels include at least two distinct regions, with one region yielding to lateral deformation more than at least one other region. The regions each independently may include a plurality of beads, such beads optionally integrally formed in the body of the pressure panel. In aerospace applications, the pressure panel may be coupled to load-bearing structures, such as wings, and may at least partially define a wheel well.

Abstract: A projector apparatus that may include a first plurality of adjacent translucent lenses on at least one side of an inner lens, said inner lens configured to rotate and translate about an axis (A) of the inner lens; a second plurality of adjacent translucent lenses formed on at least one side of a concave outer lens; a light source configured to direct a portion of light through the rotatable and translatable inner lens and then through the concave outer lens; and a motor configured to rotatably and translatably drive the inner lens in an oscillating manner about and along the axis of the concave inner lens (A); so that the oscillating inner lens imparts a moving textured image for modification through the fixed concave outer lens for display upon a surface, such as a ceiling to simulate a moving liquid surface.

Abstract: An apparatus for carrying golf clubs and a beverage while practicing allows ease of movement with only a few clubs and a beverage for quicker and more productive practice. The apparatus has self-supporting aspects to allow the apparatus to be used in all areas of a practice range.

Abstract: A valve assembly for a shower/tub system is provided. The assembly includes a valve body assembly having a molded base, a first inlet connection fitting configured to fluidly attach a first fluid source to the molded base, a second inlet connection fitting configured to fluidly attach a second fluid source to the molded base, a first outlet connection fitting configured to fluidly attach a shower fixture to the molded base, and a second outlet connection fitting configured to fluidly attach a tub nozzle to the molded base.

Abstract: An iron-doped high-electron-mobility transistor (HEMT) structure includes a substrate, a nucleation layer over the substrate, and a buffer layer over the nucleation layer. The gallium-nitride buffer layer includes a iron-doping-stop layer having a concentration of iron that drops from a juncture with an iron-doped component of the buffer layer over a thickness that is relatively small compared to that of the iron-doped component. The iron-doping-stop layer is formed at lower temperature compared to the temperature at which the iron-doped component is formed. The iron-doped HEMT structure also includes a channel layer over the buffer layer. A carrier-supplying barrier layer is formed over the channel layer.

Abstract: An adjustable shower system including a support tube configured to be fluidly coupled to a shower arm, and a main body supported for sliding movement along the support tube. A shower head is supported by the main body and is fluidly coupled to the support tube. A brake is configured to releasably secure the main body at one of a plurality vertical positions along the support tube.

Abstract: Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit, or prevent, undesirable reactions between the electrically conductive material and the other component(s) which can impair device performance. In certain embodiments, the electrically conductive material may be formed in a via. For example, the via can extend from a topside of the device to a backside so that the electrically conductive material connects a topside contact to a backside contact. The structures described herein may form the basis of a number of semiconductor devices including transistors (e.g., FET), Schottky diodes, light-emitting diodes and laser diodes, amongst others.

Abstract: A device for repair of a heart valve leaflet includes an elongated catheter assembly having a proximal end and a distal end, and a tip at the distal end of the catheter assembly. A capture mechanism having a first free end and a second free end is rotatably coupled to a distal end of the tip. A plication mechanism has an open configuration and a closed configuration, and extends between the first free end and the second free end of the capture mechanism when in the open configuration. The device may also include a clip housing at a proximal end of the tip configured to hold a clip therein.

Abstract: A telecommunications cable management system includes a planar base element including a planar top surface and side edges. Side elements are mounted with a mating arrangement to the base element. The side elements may include one or more of the following: upstanding wall portions, side exits extending horizontally, and downspouts. The base elements and the upstanding wall portions may have a continuous cross-section, and can be cut to the desired length for the cable management system. The downspout and side exit elements may also include multiple components wherein a central section of each can be cut to the desired width.

Abstract: A guide member configured for guiding a suture passer through a cannula and tissue surrounding the cannula to facilitate closure of an opening in tissue. The guide member includes a guide housing and an elongated guide shaft. The guide housing is configured for releasably engaging the guide member with the cannula and defines an entry aperture. The elongated guide shaft extends distally from the guide housing and defines an annular exterior surface. An exit aperture is defined through the annular exterior surface. The guide member defines a lumen extending from the entry aperture, through the guide housing and the elongated guide shaft, to the exit aperture. The entry aperture, lumen, and exit aperture cooperating to define a passageway extending through the guide member.

Abstract: Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit, or prevent, undesirable reactions between the electrically conductive material and the other component(s) which can impair device performance. In certain embodiments, the electrically conductive material may be formed in a via. For example, the via can extend from a topside of the device to a backside so that the electrically conductive material connects a topside contact to a backside contact. The structures described herein may form the basis of a number of semiconductor devices including transistors (e.g., FET), Schottky diodes, light-emitting diodes and laser diodes, amongst others.

Abstract: Anisotropic pressure panels are disclosed. The pressure panels include at least two distinct regions, with one region yielding to lateral deformation more than at least one other region. The regions each independently may include a plurality of beads, such beads optionally integrally formed in the body of the pressure panel. In aerospace applications, the pressure panel may be coupled to load-bearing structures, such as wings, and may at least partially define a wheel well.

Abstract: An iron-doped high-electron-mobility transistor (HEMT) structure includes a substrate, a nucleation layer over the substrate, and a buffer layer over the nucleation layer. The gallium-nitride buffer layer includes a iron-doping-stop layer having a concentration of iron that drops from a juncture with an iron-doped component of the buffer layer over a thickness that is relatively small compared to that of the iron-doped component. The iron-doping-stop layer is formed at lower temperature compared to the temperature at which the iron-doped component is formed. The iron-doped HEMT structure also includes a channel layer over the buffer layer. A carrier-supplying barrier layer is formed over the channel layer.

Abstract: A method of gathering tissue of a heart valve leaflet 2 may include inserting an elongated catheter assembly 12 to a position adjacent the heart valve leaflet, the catheter assembly including a capture tool 22 and a tissue support member 30. The capture tool 22 and the tissue support member 30 may each be independently moveable between a retracted position and an extended position. Partially retracting the capture tool 22 with the tissue support member 30 in the extended position gathers tissue 15 of the heart valve leaflet 2 between the capture tool and the tissue support member. A clip 55 may then be applied from the catheter assembly 12 to the gathered tissue 15 to hold the tissue substantially in a gathered configuration.

Abstract: A device 10 for gathering tissue in a patient includes an elongated catheter 14 and a capture assembly 13 at a distal portion of the catheter. The capture assembly has a closed side 18 and a door 20 rotatable between an open condition and a closed condition. The closed side 18 of the capture assembly 13 and the door 20 in the closed condition may collectively define a tissue capturing compartment 19. Movement of the door 20 from the open condition to the closed condition adjacent the tissue may capture a portion 44 of the tissue in the tissue capturing compartment 19. A clip may then be applied from the capture assembly 13 to the captured tissue 44 to hold the tissue substantially in a gathered configuration.