Abstract: A process of cleaning semiconductor processing, handling and manufacturing equipment in which such equipment is contacted with a cleaning effective amount of liquid or supercritical carbon dioxide.

Abstract: A process of depositing a thin film on a nanometer structure in which a coating, which may be an aerogel material or metallic seed layer, is prepared. The coating is combined with a supercritical composition to form a supercritical coating composition. The supercritical coating composition is deposited upon a nanometer structure under supercritical conditions. Supercritical conditions are removed whereby the supercritical composition is removed and the coating solidifies into a thin solid film.

Abstract: A process of removing residual slurry resulting from chemical mechanical polishing of a workpiece in which the workpiece is contacted with a composition of a supercritical fluid, said supercritical fluid including supercritical, carbon dioxide and a co-solvent, and a surfactant.

Abstract: A process of depositing a thin film on a nanometer structure in which a coating, which may be an aerogel material or metallic seed layer, is prepared. The coating is combined with a supercritical composition to form a supercritical coating composition. The supercritical coating composition is deposited upon a nanometer structure under supercritical conditions. Supercritical conditions are removed whereby the supercritical composition is removed and the coating solidifies into a thin solid film.

Abstract: A process of removing residual slurry resulting from chemical mechanical polishing of a workpiece in which the workpiece is contacted with a composition of a supercritical fluid, said supercritical fluid including supercritical carbon dioxide and a co-solvent, and a surfactant.

Abstract: A process of drying a semiconductor wafer which includes at least one microelectric structure disposed thereon which includes contacting a water-containing thin film-covered semiconductor wafer with a composition which includes liquid or supercritical carbon dioxide and a surfactant.

Abstract: The present invention relates to formation of air gaps in metal/insulator interconnect structures, and to the use of supercritical fluid (SCF)-based methods to extract sacrificial place-holding materials to form air gaps in a structure. Supercritical fluids have gas-like diffusivities and viscosities, and very low or zero surface tension, so SCF's can penetrate small access holes and/or pores in a perforated or porous bridge layer to reach the sacrificial material. Examples of SCFs include CO2 (with or without cosolvents or additives) and ethylene (with or without cosolvents or additives). In a more general embodiment, SCF-based methods for forming at least partially enclosed air gaps in structures that are not interconnect structures are disclosed.

Abstract: Positive resists sensitive to UV, electron beam, and x-ray radiation which are alkaline developable are formulated from a polymer material comprising recurrent structures having alkaline soluble groups pendent to the polymer backbone, a portion of which groups are substituted with acid labile groups.

Abstract: Detection of an evolving or diffusing gaseous substance emanating from an irradiated or thermolyzed layer of polymeric composition in semiconductor processing or similar processes is disclosed. The evolving or diffusing gaseous substance is detected by spatially disposing from the irradiated or thermolyzed layer a detector layer that includes a compound having leaving groups that are sensitive to the gaseous substance being detected.

Abstract: Detection of an evolving or diffusing gaseous substance emanating from an irradiated or thermolyzed layer of polymeric composition in semiconductor processing or similar processes is disclosed. The evolving or diffusing gaseous substance is detected by spatially disposing from the irradiated or thermolyzed layer a detector layer that includes a compound having leaving groups that are sensitive to the gaseous substance being detected.

Abstract: The present invention is directed to developer compositions for poly-alpha-acrylate or methacrylate based resists giving high contrast and whose components are closely matched in boiling points. The use of the present developer improved the critical dimensional uniformity of images developed in a positive electron beam resist. More particularly, the present invention is directed to developer formulations whose compositions are directed to enhanced printed linearity, better across the plate uniformity, and improved contrast of the imaged positive resists. Such a improved developer can be used for the positive resist exposed by photons, electrons, ions, or X-rays.

Abstract: A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.

Abstract: A process for the stoichiometric carbonation of a hydroxyaromatic material is provided which comprises the steps of (a) mixing together in a reaction vessel (1) a hydroxyaromatic material, (2) a sufficient amount of a dialkyl dicarbonate to give the desired degree of substitution, (3) a catalytic amount of an unhindered tertiary amine, and (4) a solvent, (b) stirring the reaction mixture, (c) precipitating the alkyl carbonate of the hydroxyaromatic material, and (d) recovering the alkyl carbonate of the hydroxyaromatic material.

Abstract: The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.

Abstract: A composition and methods for the use and manufacture thereof are provided for a polymeric dye. The composition comprises one or more aminoaromatic chromophores in conjunction with polymers having an anhydride group or the reaction products thereof. The composition is particularly useful as an underlaying antireflective coating with microlithographic photoresists for the absorbtion of near or deep ultraviolet radiation.

Abstract: Positive resists sensitive to UV, electron beam, and x-ray radiation which are alkaline developable are formulated from a polymer material comprising recurrent structures having alkaline soluble groups pendent to the polymer backbone, a portion of which groups are substituted with acid labile groups.

Abstract: A method of making a rim-type phase shift mask comprising the steps of: providing a substrate having opposing first and second surfaces, the first surface being at least partially covered with a first layer of material that substantially blocks the transmission therethrough of electromagnetic radiation of the predetermined range of wavelengths; forming a plurality of openings extending through the first layer so as to expose underlying portions of the first surface of the substrate; depositing a layer of hybrid photoresist on the first layer; exposing the second surface of the substrate to electromagnetic radiation to activate the desired portions of the hybrid photoresist; developing the photoresist, thereby exposing portions underlying the resist; and etching the exposed portions of the substrate is disclosed.

Abstract: A C4 or flip chip reworkable electronic device is provided comprising an integrated circuit chip having conductive pads thereon which pads are electrically connected to corresponding pads on an interconnection substrate by solder connections, wherein the space between the chip and substrate is sealed using a specially defined thermoplastic resin such as polysulfone and polyetherimide.

Abstract: A composition and methods for the use and manufacture thereof are provided for a polymeric dye. The composition comprises one or more aminoaromatic chromophores in conjunction with polymers having an anhydride group or the reaction products thereof. The composition is particularly useful as an underlaying antireflective coating with microlithographic photoresists for the absorbtion of near or deep ultraviolet radiation.

Abstract: Microlithographic methods for the use of improved underlayers for chemically amplified deep UV photoresist compositions and structures produced thereby are disclosed. The compositions comprise, in admixture, a polymeric binder, and an azide which is thermolyzed during microlithographic processing to form an amine. Films formed from the underlayer compositions of the present invention, when applied immediately under and proximate to a chemically amplified photoresist film reduce the resist structure sidewall foot or undercut caused by an adverse contact reaction.