Abstract: An integrated circuit is provided. An ESD inhibition circuit of the integrated circuit is connected with a first pad, a first node and a second node. The ESD inhibition circuit includes a capacitor bank, a resistor, a voltage selector and a switching transistor. The capacitor bank is connected between the first pad and a third node. The resistor is connected between the third node and the first node. The two input terminals of the voltage selector are connected with the third node and a fourth node, respectively. An output terminal of the voltage selector is connected with a fifth node. A first terminal of the switching transistor is connected with the first pad. A second terminal of the switching transistor is connected with the second node. A gate terminal of the switching transistor is connected with the fifth node.

Abstract: A pixel structure includes a data line, a scan line, a common signal line, a first switching element, a second switching element, a first pixel electrode, and a second pixel electrode. The first switching element is electrically connected to the scan line and the data line. The second switching element is electrically connected to the scan line and the common signal line. The first pixel electrode is electrically connected to the first switching element. The second pixel electrode is electrically connected to the second switching element. The second pixel electrode surrounds the first pixel electrode.

Abstract: The present disclosure provides a semiconductor structure, including a substrate, a first metal line over the substrate and extending along a first direction, a protection layer lining a sidewall of the first metal line, a second metal line above the first metal line and extending along the first direction, and a third metal line above the second metal line, extending along a second direction perpendicular to the first direction.

Abstract: A protective case includes a protective shell and a heat dissipation film. The protective shell has an inner wall. The heat dissipation film is attached on the inner wall. The heat dissipation film includes a plastic base layer, a heat diffusion layer and a heat absorption layer stacked sequentially in a direction away from the inner wall. Therefore, the heat dissipation film is attached on the inner wall of the protective shell to make the protective case for a mobile device possess desirable efficiency of heat dissipation.

Abstract: A method (of forming a semiconductor device) including forming cell regions (in alternating first and second rows having first and second heights) including forming a majority of the cell regions in the first rows including: limiting a height of the majority of the cell regions to be single-row cell regions that span corresponding single one of the first rows but do not extend therebeyond; and forming a minority of the cell regions correspondingly in at least the first rows including reducing widths of the multi-row cell regions to be smaller than comparable single-row cell regions; and expanding heights of the minority of the cell regions to be multi-row cell regions, each of the multi-row cell regions spanning a corresponding single first row and at least a corresponding second row such that cell region densities of the second rows are at least about forty percent.

Abstract: An ESD circuit is connected between an I/O pad and a first node. The ESD circuit includes a bi-directional buck circuit, a triggering circuit and a discharging circuit. The bi-directional buck circuit includes a forward path and a reverse path. The forward path and the reverse path are connected between the I/O pad and a second node. The triggering circuit is connected between the second node and the first node. The discharging circuit is connected between the second node and the first node, and connected with the triggering circuit. When the I/O pad receives negative ESD zap, the ESD current flows from the first node to the I/O pad through the discharging circuit and the reverse path. When the I/O pad receives positive ESD zap, the ESD current flows from the I/O pad to the first node through the forward path and the discharging circuit.

Abstract: The present disclosure provides heterodimeric antibodies that bind to two different target antigens at the same time. In one embodiment, the heterodimeric antibodies are bispecific antibodies. In one embodiment, the heterodimeric antibodies comprise three polypeptides including: a first polypeptide comprising an scFv-Fc fusion polypeptide; a second polypeptide comprising an immunoglobulin heavy chain; and a third polypeptide comprising an immunoglobulin light chain. In one embodiment, the first polypeptide includes one or more point mutations that confer increased thermal-stability to the first polypeptide.

Abstract: One aspect of this description relates to a method for operating an integrated circuit (IC) manufacturing system. The method includes placing a first nano-sheet structure within a IC layout diagram. The first nano-sheet structure has a first width. The method includes abutting a second nano-sheet structure with the first nano-sheet structure. The second nano-sheet structure has a second width. The second width is less than the first width. The method includes generating and storing the IC layout diagram in a storage device.

Abstract: A monolithic three-dimensional (3D) integrated circuit (IC) device includes a lower tier including a lower tier cell and an upper tier arranged over the lower tier. The upper tier has a first upper tier cell and a second upper tier cell separated by a predetermined lateral space. A monolithic inter-tier via (MIV) extends from the lower tier through the predetermined lateral space, and the MIV has a first end electrically connected to the lower tier cell and a second end electrically connected to the first upper tier cell.

Abstract: A method of making an integrated circuit includes steps of etching an opening in an insulating mask to expose a first dummy contact on a backside of the integrated circuit, depositing a conductive material into the opening, the conductive material contacting a sidewall of the first dummy contact, and recessing the conductive material to expose an end of the first dummy contact. The method also includes steps of depositing an insulating material over the conductive material in the opening, removing the first dummy contact from the insulating mask to form a first contact opening, and forming a first conductive contact in the first contact opening, the first conductive contact being electrically connected to the conductive material.

Abstract: Apparatus and methods for generating a physical layout for a high density routing circuit are disclosed. An exemplary semiconductor structure includes: a gate structure; a plurality of first metal lines formed in a first dielectric layer below the gate structure; at least one first via formed in a second dielectric layer between the gate structure and the first dielectric layer; a plurality of second metal lines formed in a third dielectric layer over the gate structure; and at least one second via formed in a fourth dielectric layer between the gate structure and the third dielectric layer. Each of the at least one first via is electrically connected to the gate structure and a corresponding one of the plurality of first metal lines. Each of the at least one second via is electrically connected to the gate structure and a corresponding one of the plurality of second metal lines.

Abstract: A locking assembly for a Kensington-locked enclosure can be simply padlocked for security. The locking assembly includes a first connecting member and a second connecting member. The first connecting member is fixed on a base body of the enclosure, the first connecting member comprises a first tongue piece. The second connecting member is fixed on an upper cover of the enclosure, and the second connecting member comprises a second tongue piece. The first tongue piece and the second tongue piece protrude from an outside of the enclosure and fit each other, and a padlock can pass through the first tongue piece and the second tongue piece to lock the base body and the upper cover together and secure the attachment of the Kensington lock.

Abstract: A method for fabricating a semiconductor structure includes depositing a first insulation material over a substrate, wherein the substrate includes an active region. The method further includes etching the first insulation material to define a first recess extending along a first direction at a first level of the first insulation material. The method further includes depositing a second insulation material lining with a sidewall of the first recess. The method further includes depositing a first metal line in the first recess.

Abstract: The present disclosure provides several embodiments of multi-specific antigen binding protein complexes. In some embodiments, the multi-specific antigen binding protein complex is composed of either two or three polypeptide chains that assemble with each other to form het-erodimeric complexes comprising two different Fab regions each capable of binding two different epitopes and comprising an Fc region which is capable of exhibiting Fc effector function, thus having a relatively simple structure compared to certain other multi-specific antibodies. In one embodiment, the multi-specific antigen binding protein complex is activatable as one of the polypeptide chains that compose the protein complex carries a cleavable linker.

Abstract: An integrated circuit includes a first transistor, a horizontal routing track extending in a first direction in a first metal layer, and a via connector conductively connecting the horizontal routing track to a first terminal of the first transistor. The integrated circuit also includes a backside routing track extending in the first direction in a backside metal layer, and a backside via connector conductively connecting the backside routing track to a second terminal of the first transistor. The backside metal layer and the first metal layer are formed at opposite sides of a semiconductor substrate. In the integrated circuit, either the first terminal or the second terminal is a gate terminal of the first transistor.

Abstract: An ESD circuit includes a voltage division circuit, a RC control circuit and a voltage selection circuit. The voltage division circuit is connected between a first power pad and a first node, and generates a first voltage. The RC control circuit is connected between the first power pad and a second power pad, and generates a second voltage and a third voltage. The voltage selection circuit receives the first voltage and the second voltage, and outputs a fourth voltage. The first transistor and the second transistor are serially connected between the first power pad and the second power pad. A gate terminal of the first transistor receives the first voltage. A gate terminal of the second transistor receives the third voltage. The third transistor is connected with the first power pad and an internal circuit. A gate terminal of the third transistor receives the fourth voltage.

Abstract: Main technical features of a sealing mechanism of a pressure vessel provided by the invention are a sealing unit for airtightly combining with the vessel, and a combination unit for positioning the sealing unit in the airtight combination state, and there are common structures disposed between constituent elements of the sealing unit and the combination unit, so that the sealing unit and the combination unit can be combined with each other in order to facilitate use and storage and to avoid losing or missing parts.

Abstract: One aspect of this description relates to a method for operating an integrated circuit (IC) manufacturing system. The method includes placing a first nano-sheet structure within a IC layout diagram. The first nano-sheet structure has a first width. The method includes abutting a second nano-sheet structure with the first nano-sheet structure. The second nano-sheet structure has a second width. The second width is less than the first width. The method includes generating and storing the IC layout diagram in a storage device.

Abstract: One aspect of this description relates to a method for operating an integrated circuit (IC) manufacturing system. The method includes placing a first nano-sheet structure within a IC layout diagram. The first nano-sheet structure has a first width. The method includes abutting a second nano-sheet structure with the first nano-sheet structure. The second nano-sheet structure has a second width. The second width is less than the first width. The method includes generating and storing the IC layout diagram in a storage device.