Abstract: In a method of manufacturing a semiconductor device, a memory cell structure covered by a protective layer is formed in a memory cell area of a substrate. A mask pattern is formed. The mask pattern has an opening over a first circuit area, while the memory cell area and a second circuit area are covered by the mask pattern. The substrate in the first circuit area is recessed, while the memory cell area and the second circuit area are protected. A first field effect transistor (FET) having a first gate dielectric layer is formed in the first circuit area over the recessed substrate and a second FET having a second gate dielectric layer is formed in the second circuit area over the substrate as viewed in cross section.

Abstract: An electronic device has a narrow viewing angle state and a wide viewing angle state, and includes a panel and a light source providing a light passing through the panel. In the narrow viewing angle state, the light has a first relative light intensity and a second relative light intensity. The first relative light intensity is the strongest light intensity, the second relative light intensity is 50% of the strongest light intensity, the first relative light intensity corresponds to an angle of 0°, the second relative light intensity corresponds to a half-value angle, and the half-value angle is between ?15° and 15°. In the narrow angle state, a third relative light intensity at each angle between 20° and 60° or each angle between ?20° and ?60° is lower than 20% of the strongest light intensity.

Abstract: An accommodation device includes a plurality of walls, a partition, and an air blowing unit. The walls define an accommodation space. The partition is disposed in the accommodation space to divide the accommodation space into a first area and a second area. The air blowing unit is disposed in the first area and blows an air to the first area.

Abstract: An information handling system includes first and second USB-C channels and a baseboard management controller (BMC). The first USB-C channel receives power from a first power adaptor, and the second USB-C channel receives power from a second power adaptor. The BMC determines an average current delivered to the information handling system from the first power adaptor and the second power adaptor, allocates a first portion of the average current to the first power adaptor and a second portion of the average current to the second power adaptor, and directs the first power adaptor to provide the first portion of the average current and the second power adaptor to provide the second portion of the average current.

Abstract: A wireless power system includes a control system configured to output radio waves to an environment and a wearable device having an energy harvesting device configured to receive the radio waves and to harvest energy from the received radio waves. The wearable device also includes a processor and a sensor configured to detect a state of the wearable device and output a state signal to the processor. The processor is configured to output a device control signal based on the detected state signal. The wearable device further includes a communicator configured to receive the device control signal from the processor and to provide an output to the control system based on the state of the wearable device. At least the processor, the sensor, or the communicator receive power via the energy harvested by the energy harvesting device.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first doped region and a second doped region disposed within a substrate. A data storage structure is arranged over the substrate and laterally between the first doped region and the second doped region. An isolation structure is arranged within the substrate along a first side of the data storage structure. The first doped region is laterally between the isolation structure and the data storage structure. A remnant is arranged over and along a sidewall of the isolation structure. The remnant includes a first material having a vertically extending segment and a horizontally extending segment protruding outward from a sidewall of the vertically extending segment.

Abstract: A method is provided in which a monitor cell is made that is substantially identical to the flash memory cells of an embedded memory array. The monitor cell is formed simultaneously with the cells of the memory array, and so in certain critical aspects, is exactly comparable. An aperture is formed that extends through the control gate and intervening dielectric to the floating gate of the monitor cell. To prevent silicide contamination during a subsequent CMP process, a silicide protection layer (SPL), such as a resist protective oxide, is formed over exposed portions of the control gate prior to formation of a silicide contact formed on the floating gate. The SPL is formed simultaneously with existing manufacturing processes to avoid additional process steps.

Abstract: A data transmission method is provided. The data transmission method may be applied to an apparatus. The data transmission method may include the following steps. The modem of an apparatus may receive or transmit data packets from or to the host device of the apparatus through a host interface in an event that the modem is in a first mode during the period. Then, the modem may store the data packets in a buffer in an event that the modem is in a second mode during the period. The host interface is in an active mode in an event that the modem is in the first mode, and the host interface is in a low power low-power mode in an event that the modem is in the second mode.

Abstract: A semiconductor package includes a first semiconductor die, an encapsulant, a high-modulus dielectric layer and a redistribution structure. The first semiconductor die includes a conductive post in a protective layer. The encapsulant encapsulates the first semiconductor die, wherein the encapsulant is made of a first material. The high-modulus dielectric layer extends on the encapsulant and the protective layer, wherein the high-modulus dielectric layer is made of a second material. The redistribution structure extends on the high-modulus dielectric layer, wherein the redistribution structure includes a redistribution dielectric layer, and the redistribution dielectric layer is made of a third material. The protective layer is made of a fourth material, and a ratio of a Young's modulus of the second material to a Young's modulus of the fourth material is at least 1.5.

Abstract: An image sensor device includes a substrate, photosensitive pixels, an interconnect structure, a dielectric layer, and a light blocking element. The photosensitive pixels are in the substrate. The interconnect structure is over a first side of the substrate. The dielectric layer is over a second side of the substrate opposite the first side of the substrate. The light blocking element has a first portion extending over a top surface of the dielectric layer and a second portion extending in the dielectric layer. The second portion of the light blocking element laterally surrounds the photosensitive pixels.

Abstract: A propellant applied to a thruster, especially a pulsed plasma thruster, has a composition including a polymer and a metal powder material mixed with the polymer. A method of manufacturing the propellant includes dissolving polymer particles in a solvent for generating a solution, adding a powdered metal material to the solution for obtaining a mixture, and drying the mixture for removing the solvent from the mixture. Accordingly, a dried mixture is acquired and defined as a metal composite polymer which serves as the composition of the propellant. Accordingly, the use of the propellant allows a decrease in the voltage involved in a punching process and an efficient reduction in the energy consumption and assists the thruster in increasing the propulsive efficiency.

Abstract: A device includes: alternating first rows and second rows correspondingly including first cell regions and second cell regions, each of the first cell regions and second cell regions correspondingly including active regions; in a first metallization layer over the active regions, each of the first cell regions and the second cell regions include first and second power grid (PG) segments, and one or more routing (RTE) segments; and in a first buried metallization layer under the active regions, each of the first cell regions includes first and second buried PG (BPG) segments, and each of the second cell regions includes one or more buried local interconnect (BLI) structures; and each of the first cell regions is free from including a BLI structure.

Abstract: The present invention provides a thermoplastic elastomer composition for foaming. The thermoplastic elastomer composition comprises: (A) an ethylene-based copolymer; (B) an olefin block copolymer; (C) an unsaturated aliphatic rubber; and (D) a crosslinking agent. The olefin block copolymer is different from the ethylene-based copolymer. The weight ratio of the unsaturated aliphatic rubber (C) to the olefin block copolymer (B) is 1:1.5 to 1:5.

Abstract: An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure surrounds a first portion of the light-sensing region, the first isolation structure has an etch stop layer, the etch stop layer has an end portion, and the end portion has an H-like shape. The image sensor device includes a second isolation structure extending into the substrate from the back surface to the end portion. The second isolation structure surrounds a second portion of the light-sensing region.

Abstract: Some embodiments relate to an integrated device, including a substrate having a first side and a second side opposite the first side, the substrate being a first material; a first wire level on the first side of the substrate and having a first wire; a second wire level on the second side of the substrate and having a second wire; a through-substrate via (TSV) extending from the first wire to the second wire through the substrate; a shallow trench isolation (STI) region surrounding the TSV at the second side of the substrate; and a semiconductor region between the STI region and the TSV, the semiconductor region comprising the first material.

Abstract: A semiconductor device including a first active area layer that extends in a first direction, a first metal over diffusion layer that extends in a second direction that is different than the first direction, the first metal over diffusion layer situated over the first active area layer, a first gate that extends in the second direction and over the first active area layer, a first gate end of the first gate that abuts a first dielectric region, and first low-k dielectric material situated in the first dielectric region.

Abstract: An impact detection system includes processing circuitry with one or more processors. The impact detection system also includes memory storing instructions, that when executed by the processing circuitry, cause the processing circuitry to process positioning data to determine a position of a portable device within an interactive environment, compare the position of the portable device to a location of a component within the interactive environment, identify an occurrence of an impact event based on the position of the portable device corresponding to the location of the component, and update an impact profile for at least the portable device or the component based on the occurrence of the impact event.

Abstract: A device including: a first active region; first and second ohmic-contact layers correspondingly on, and coupled to, a front side and a back side of a first portion of the first active region; a metal-to-source/drain (MD) contact including a first part on the first ohmic-contact layer and at least a second part or a third part correspondingly aside a first lateral side or a second lateral side of the first portion of the first active region, the first part of the MD contact being coupled to the first ohmic-contact layer; and a buried-via (BV) structure including: a first part under, and coupled to, the second ohmic-contact layer; and a second part under, and coupled to, the MD contact.

Abstract: A resonator includes an LC resonant unit and an embedded resonant unit. The LC resonant unit includes a resonant element. The resonant element includes a first portion, a second portion, and an interface between the first portion and the second portion. The first portion is connected to the second portion through the interface. The embedded resonant unit is embedded in the LC resonant unit through the interface.