Patents by Inventor Wei Chu

Wei Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220208753
    Abstract: In some embodiments, a semiconductor device is provided, including a first doped region of a first conductivity type configured as a first terminal of a first diode, a second doped region of a second conductivity type configured as a second terminal of the first diode, wherein the first and second doped regions are coupled to a first voltage terminal; a first well of the first conductivity type surrounding the first and second doped regions in a layout view; a third doped region of the first conductivity type configured as a first terminal, coupled to an input/output pad, of a second diode; and a second well of the second conductivity type surrounding the third doped region in the layout view. The second and third doped regions, the first well, and the second well are configured as a first electrostatic discharge path between the I/O pad and the first voltage terminal.
    Type: Application
    Filed: March 21, 2022
    Publication date: June 30, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Lin PENG, Li-Wei CHU, Ming-Fu TSAI, Jam-Wem LEE, Yu-Ti SU
  • Publication number: 20220208752
    Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.
    Type: Application
    Filed: March 21, 2022
    Publication date: June 30, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Lin PENG, Li-Wei CHU, Ming-Fu TSAI, Jam-Wem LEE, Yu-Ti SU
  • Patent number: 11373905
    Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.
    Type: Grant
    Filed: September 1, 2020
    Date of Patent: June 28, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Li-Wei Chu, Ying-Chi Su, Yu-Kai Chen, Wei-Yip Loh, Hung-Hsu Chen, Chih-Wei Chang, Ming-Hsing Tsai
  • Publication number: 20220181464
    Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.
    Type: Application
    Filed: January 24, 2022
    Publication date: June 9, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Peng-Wei CHU, Ding-Kang Shih, Sung-Li Wang, Yasutoshi Okuno
  • Patent number: 11355927
    Abstract: A device is disclosed herein. The device includes an electrostatic discharge (ESD) detector, a bias generator, and an ESD driver including at least two transistors coupled to each other in series. The ESD detector is configured to detect an input signal and generate a detection signal in response to an ESD event being detected. The bias generator is configured to generate a bias signal according to the detection signal. The at least two transistors are controlled according to the bias signal and a logic control signal, and the input signal is applied across the at least two transistors.
    Type: Grant
    Filed: July 22, 2020
    Date of Patent: June 7, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Lin Peng, Yu-Ti Su, Chia-Wei Hsu, Ming-Fu Tsai, Shu-Yu Su, Li-Wei Chu, Jam-Wem Lee, Chia-Jung Chang, Hsiang-Hui Cheng
  • Patent number: 11331583
    Abstract: A method and a system for recommending a teammate for a team game are provided. The method includes the following: searching game data, where the game data includes a plurality of game evaluation parameters; choosing a target parameter from the game evaluation parameters, where a correlation between the target parameter and at least one game experience index is greater than a correlation between remaining parameters and the at least one game experience index; automatically selecting a target role position according to the target parameter and a first game role position of a chosen game role; automatically selecting a target game role according to the target role position; and recommending a player to be teamed up who plans to use the target game role to play the game as a teammate according to the target game role.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: May 17, 2022
    Assignee: Acer Incorporated
    Inventors: Pin-Cyuan Lin, Sheng-Wei Chu, Chun-Hsien Li, Jun-Hong Chen, Te-Chung Huang, Tsung-Hsien Tsai, Yueh-Yarng Tsai
  • Publication number: 20220149519
    Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.
    Type: Application
    Filed: January 21, 2022
    Publication date: May 12, 2022
    Inventors: Li-Wei CHU, Ying-Chi SU, Yu-Kai CHEN, Wei-Yip LOH, Hung-Hsu CHEN, Chih-Wei CHANG, Ming-Hsing TSAI
  • Publication number: 20220141596
    Abstract: A MEMS device and a method for manufacturing a MEMS device are provided. The MEMS device includes an anchor, a diaphragm structure, and a sealing film. The diaphragm structure is disposed over the anchor and has an opening through the diaphragm structure. The sealing film covers at least a portion of the opening of the diaphragm structure.
    Type: Application
    Filed: October 30, 2020
    Publication date: May 5, 2022
    Inventors: WEI-CHU LIN, YI-CHUAN TENG, JUNG-KUO TU
  • Publication number: 20220124472
    Abstract: A bluetooth communication method includes: a first communication device establishing bluetooth connection with a second communication device, wherein the first communication device is configured to execute multiple tasks; the first communication device communicating with the second communication device through the bluetooth connection, to allocate at least one task of the multiple tasks to the second communication device for execution; and the first communication device receiving an execution result of the at least one task from the second communication device through the bluetooth connection.
    Type: Application
    Filed: December 28, 2021
    Publication date: April 21, 2022
    Applicant: MediaTek Singapore Pte. Ltd.
    Inventors: Wei-Chu Lai, Wei-Lun Wan, FEI KONG
  • Patent number: 11309217
    Abstract: A method of making a semiconductor device that includes forming a dielectric stack over a substrate and patterning a contact region in the dielectric stack, the contact region having side portions and a bottom portion that exposes the substrate. The method also includes forming a dielectric barrier layer in the contact region to cover the side portions and forming a conductive blocking layer to cover the dielectric barrier layer, the dielectric stack, and the bottom portion of the contact region. The method can include forming a conductive layer over the conductive blocking layer and forming a conductive barrier layer over the conductive layer. The method can further include forming a silicide region in the substrate beneath the conductive layer.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: April 19, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ya-Huei Li, Li-Wei Chu, Yu-Hsiang Liao, Hung-Yi Huang, Chih-Wei Chang, Ching-Hwanq Su
  • Patent number: 11309213
    Abstract: A method for manufacturing a semiconductor structure includes following operations. A sacrificial layer is formed over the conductive layer, wherein the sacrificial layer includes a first sacrificial portion over the first conductive portion, and a second sacrificial portion over the second conductive portion, and a first thickness of the first sacrificial portion is larger than a second thickness of the second sacrificial portion. The first sacrificial portion and the second sacrificial portion of the sacrificial layer, and the second conductive portion of the conductive layer are removed.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: April 19, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yu-Hsiang Liao, Ya-Huei Li, Li-Wei Chu, Chun-Wen Nieh, Hung-Yi Huang, Chih-Wei Chang, Ching-Hwanq Su
  • Patent number: 11282831
    Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: March 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Lin Peng, Li-Wei Chu, Ming-Fu Tsai, Jam-Wem Lee, Yu-Ti Su
  • Publication number: 20220072431
    Abstract: A method and a system for recommending a teammate for a team game are provided. The method includes the following: searching game data, where the game data includes a plurality of game evaluation parameters; choosing a target parameter from the game evaluation parameters, where a correlation between the target parameter and at least one game experience index is greater than a correlation between remaining parameters and the at least one game experience index; automatically selecting a target role position according to the target parameter and a first game role position of a chosen game role; automatically selecting a target game role according to the target role position; and recommending a player to be teamed up who plans to use the target game role to play the game as a teammate according to the target game role.
    Type: Application
    Filed: November 10, 2020
    Publication date: March 10, 2022
    Applicant: Acer Incorporated
    Inventors: Pin-Cyuan Lin, Sheng-Wei Chu, Chun-Hsien Li, Jun-Hong Chen, Te-Chung Huang, Tsung-Hsien Tsai, Yueh-Yarng Tsai
  • Publication number: 20220068712
    Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.
    Type: Application
    Filed: September 1, 2020
    Publication date: March 3, 2022
    Inventors: Li-Wei CHU, Ying-Chi SU, Yu-Kai CHEN, Wei-Yip LOH, Hung-Hsu CHEN, Chih-Wei CHANG, Ming-Hsing TSAI
  • Publication number: 20220029414
    Abstract: A device is disclosed herein. The device includes an electrostatic discharge (ESD) detector, a bias generator, and an ESD driver including at least two transistors coupled to each other in series. The ESD detector is configured to detect an input signal and generate a detection signal in response to an ESD event being detected. The bias generator is configured to generate a bias signal according to the detection signal. The at least two transistors are controlled according to the bias signal and a logic control signal, and the input signal is applied across the at least two transistors.
    Type: Application
    Filed: July 22, 2020
    Publication date: January 27, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Lin PENG, Yu-Ti SU, Chia-Wei HSU, Ming-Fu TSAI, Shu-Yu SU, Li-Wei CHU, Jam-Wem LEE, Chia-Jung CHANG, Hsiang-Hui CHENG
  • Patent number: 11234110
    Abstract: A bluetooth communication method includes: a first communication device establishing bluetooth connection with a second communication device, wherein the first communication device is configured to execute multiple tasks; the first communication device communicating with the second communication device through the bluetooth connection, to allocate at least one task of the multiple tasks to the second communication device for execution; wherein the at least one task includes a scan task; and the first communication device receiving an execution result of the at least one task from the second communication device through the bluetooth connection.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: January 25, 2022
    Assignee: MediaTek Singapore Pte. Ltd.
    Inventors: Wei-Chu Lai, Wei-Lun Wan, Fei Kong
  • Patent number: 11232947
    Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.
    Type: Grant
    Filed: September 1, 2020
    Date of Patent: January 25, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Li-Wei Chu, Ying-Chi Su, Yu-Kai Chen, Wei-Yip Loh, Hung-Hsu Chen, Chih-Wei Chang, Ming-Hsing Tsai
  • Patent number: 11233134
    Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: January 25, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Peng-Wei Chu, Ding-Kang Shih, Sung-Li Wang, Yasutoshi Okuno
  • Patent number: 11226352
    Abstract: An electrical connection assembly includes a main body and a spring. One end of the main body is configured to be in contact with a device under test. The spring is sleeved around the main body. Two ends of the spring are respectively defined as a first end and a second end. The first end is abutted against a limiting protrusion, and a concealed section of the main body is correspondingly arranged inside of the spring. The spring has a first tightly-coiled section, an elastic section, and a second tightly-coiled section in sequence from the first end to the second end. A pitch of the spring within the elastic section is greater than a pitch of the spring within the first tightly-coiled section, and the pitch of the spring within the elastic section is greater than a pitch of the spring within the second tightly-coiled section.
    Type: Grant
    Filed: March 19, 2020
    Date of Patent: January 18, 2022
    Assignee: C.C.P.CONTACT PROBES CO., LTD.
    Inventors: Shu-Lin Wu, Yen-Wei Lin, Wei-Chu Chen, Bor-Chen Tsai
  • Patent number: 11222818
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure, and the epitaxial structure is adjacent to the gate stack. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes applying a metal-containing material on the epitaxial structure while the epitaxial structure is heated so that a portion of the epitaxial structure is transformed to form a metal-semiconductor compound region.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: January 11, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Hsiang Chao, Min-Hsiu Hung, Chun-Wen Nieh, Ya-Huei Li, Yu-Hsiang Liao, Li-Wei Chu, Kan-Ju Lin, Kuan-Yu Yeh, Chi-Hung Chuang, Chih-Wei Chang, Ching-Hwanq Su, Hung-Yi Huang, Ming-Hsing Tsai